CN108336169A - 一种背面钝化的p型晶体硅太阳能电池的制作方法 - Google Patents
一种背面钝化的p型晶体硅太阳能电池的制作方法 Download PDFInfo
- Publication number
- CN108336169A CN108336169A CN201810010663.XA CN201810010663A CN108336169A CN 108336169 A CN108336169 A CN 108336169A CN 201810010663 A CN201810010663 A CN 201810010663A CN 108336169 A CN108336169 A CN 108336169A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- silicon
- crystal silicon
- type crystal
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 124
- 239000010703 silicon Substances 0.000 title claims abstract description 124
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000008439 repair process Effects 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 16
- 239000011259 mixed solution Substances 0.000 claims description 12
- 238000005457 optimization Methods 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910001868 water Inorganic materials 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 238000005842 biochemical reaction Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005422 blasting Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 125000004437 phosphorous atom Chemical group 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000013532 laser treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种背面钝化的P型晶体硅太阳能电池的制作方法，将进行激光开槽后的硅片采用化学蚀刻法对硅片背面的激光槽的底面与侧壁进行平坦化修复处理，同时对硅片正面扩散层进行蚀刻，优化扩散层中掺杂磷原子浓度梯度，优化发射极。之后再在硅片正面沉积SiO2薄膜和第二氮化硅减反射膜。通过本发明所述的制备方法，通过对损伤层的修复提高了太阳能电池片的开路电压和光电转换效率。
Description
技术领域
本发明属于太阳能光伏电池制造领域，具体涉及一种背面钝化的P型晶体硅太阳能电池的制作方法。
背景技术
太阳能电池制造过程中由于硅片表面的晶格缺陷会降低电池片的光电转换效率，因此在制作过程中会采用背钝化技术在电池的表面沉积一层致密的氧化膜以减少硅片表面的复合中心。由于电极要充分的与硅片接触，因此需要在电极经过的区域对硅片表面的氧化膜进行激光开槽，但是由于激光是具有高能高热的光源，在开槽的过程中，硅片的表面会形成一层氧化膜，增加了电极与硅片之间的欧姆接触阻止，同时激光还会对钝化层造成一定的机械损伤，产生新的复合中心，造成少子寿命降低。因此本发明设计了一种背面钝化的P型晶体硅太阳能电池的制作方法，对激光处理后的电池片进行优化处理，去除激光开槽对硅片造成的损伤。
发明内容
针对上述问题，本发明提出一种背面钝化的P型晶体硅太阳能电池的制作方法，该方法通过对激光处理后的电池片进行优化处理，去除了激光开槽对硅片造成的损伤。
实现上述技术目的，达到上述技术效果，本发明通过以下技术方案实现：
一种背面钝化的P型晶体硅太阳能电池的制作方法，制作电池所用的晶体硅片为含B的P型晶体硅片，包括以下步骤：
S1：表面制绒：采用清洗液对晶体硅片的两侧的表面进行清洗、腐蚀，在晶体硅片的表面形成陷光结构；
S2：制作PN结：将两块晶体硅片的背面背对背放入高温扩散炉中，在惰性气体的保护下，向炉内通入的POCl3和O2气体在700℃-900℃下发生化学反应，形成的磷元素扩散至与气体接触的扩散层中，与P型晶体硅片形成PN结；
S3：蚀刻抛光：将硅片放入HNO3和HF的清洗液中，去除磷硅玻璃和硅片侧面的PN结，同时对硅片的背面进行抛光处理；
S4：背面钝化：在硅片的背面用原子沉积法或PECVD法先后沉积氧化铝膜和第一氮化硅薄膜的钝化层；
S5：激光开槽：在硅片的背面采用激光开槽法在电极栅极线所在的位置进行开槽，所开的激光槽贯穿钝化层，激光槽的底面与硅基底相接触；
S6：修复优化：采用化学蚀刻法对硅片背面的激光槽的底面与侧壁进行平坦化修复处理，并对硅片正面扩散层进行刻蚀；
S7：正面镀膜：将硅片放置臭氧中，在电池的正面形成一层SiO2膜后，用PECVD法在硅片的表面沉积一层第二氮化硅薄膜；
S8：电极制作：采用丝网印刷法先后在硅片的背面和正面印刷制作背电极和正电极，经烘干后，将硅片置于烧结炉中进行烧结。
作为本发明的进一步改进，所述的S6包括以下步骤：
St1:将硅片放入温度为20-60℃，浓度为1％-10％的HF酸溶液除去激光槽底面与侧壁氧化层；
St2：将硅片放入氢氧化钠和双氧水的混合溶液，所述的混合溶液去除激光对钝化层表面造成的机械损伤和毛刺，同时对硅片正面扩散层进行刻蚀；所使用的混合溶液中NaOH：H2O2：H20的摩尔比为1:1:5-1:1:10；
St3:将硅片放入用氢氟酸和盐酸的混合溶液2-3min，去除硅片表面金属杂质并脱水；；
St4:将硅片浸渍在30-60℃的热水中1-3min；
以上所述的St2-St4，所述的硅片从一种溶液取出后，将硅片先用去离子水清洗烘干后再放入下一个步骤的溶液中。
作为本发明的进一步改进，S4中所沉积的氧化铝膜的膜厚为18－28nm。
作为本发明的进一步改进，S4中所沉积的第一氮化硅薄膜的膜厚为120-150nm。
作为本发明的进一步改进，S5中所形成的激光槽的宽度为30－60μm。
作为本发明的进一步改进，经S6对硅片的扩散层进行优化后，所述的扩散层的方阻增大了20-40Ω，所述的扩散层的厚度减小了0.1-0.2μm。
本发明的有益效果：本发明通过对激光处理后的电池片进行修复优化处理，通过去除了激光开槽对硅片造成的损伤和降低接触欧姆电子，提高了太阳能电池片光电转换效率，提高了太阳能电池片的供电电压。同时通过对扩散层进行深度腐蚀，调节了扩散层中掺杂磷元素的浓度梯度，优化了发射极。
附图说明
图1为现有技术电极制作工艺流程图；
图2为本发明的电极制作工艺流程图；
图3为未经修复优化的激光槽体俯视示意图；
图4本发明中经修复优化后的激光槽体俯视示意图；
其中1-激光槽，2-第二氮化硅薄膜层。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
下面结合附图对本发明的应用原理作详细的描述。
本发明中制作电池所用的晶体硅片为含B的P型晶体硅片，为表示区分，以下所述的硅片正面为表面形成PN结的一面，硅片背面为正面的对立面。
如图2所述的背面钝化的P型晶体硅太阳能电池的制作工艺流程图，包括以下步骤：
S1：表面制绒：采用KOH碱性清洗液对晶体硅片的两侧的表面进行清洗，由于晶体硅的各向异性，碱性清洗液对晶体硅的各个方向具有不同的腐蚀速率，在晶体硅片的表面形成菱形、金字塔形、梯形的陷光结构。
S2：制作PN结：将两块晶体硅片的背面背对背放入高温扩散炉中，在惰性气体的保护下，向炉内通入POCl3和O2气体，炉内的气压控制在5-100KPa，反应的温度为700℃-900℃，POCl3和O2充分反应生成的磷元素扩散至硅片表面与气体接触的硅片表面的晶格中，在P型晶体硅片的表面形成PN结，形成电池片的发射极。
S3：蚀刻抛光：S2中磷元素还会扩散至硅片侧面的硅片晶格中，同时还会形成磷硅玻璃副产物，因此需要将高温扩散后的硅片放入HNO3和HF的清洗液中，该清洗液能够去除硅片正面的磷硅玻璃和周边形成的PN结，同时对硅片的背面进行抛光清洗。
S4：背面钝化：在硅片的背面用原子沉积法或PECVD方法先后沉积一层氧化铝膜和第一氮化硅薄膜。所述的氧化膜的厚度为18-28nm，能够形成密集负电荷区，提高少子寿命；所述的第一氮化硅薄膜的厚度120-150nm，能够提高减反射率，防止铝浆全部与硅接触。
S5：激光开槽：硅片中光电转化的载流子需要通过金属电极输送出去，由于硅片背面表面上的氧化铝膜和第一氮化硅薄膜为绝缘层，因此采用激光开槽法在硅片的背面电极栅极线所在的位置进行开槽，所开的激光槽需要贯穿氧化铝膜和氮化硅膜，激光槽的底面与硅片相接触，这样才能确保电极充分与硅片接触。激光槽的宽度需要与电极的栅极线相对应，为30－60μm。
S6：修复优化：采用化学蚀刻法对硅片背面的激光槽的底面与侧壁进行平坦化修复处理，修复开槽时激光对硅片表面造成的损伤，并且对硅片正面扩散层进行深度蚀刻，该步骤具体包括以下步骤：
St1:将硅片放入温度为20-60℃，浓度为1％-10％的HF酸溶液除去激光槽对应于硅基体的底面和侧面上的氧化层。
化学反应式：SiO2+4HF＝SiF4+2H20
St2：用氢氧化钠和双氧水的混合溶液去除激光对钝化层表面造成的机械损伤和毛刺，还能够对硅片做进一步的清洗，去除槽内的微粒和有机物。同时对正面扩散层进行刻蚀，去除了扩散高浓度表面，降低了表面复合速率，提高了开路电压。经优化后，所述的扩散层的方阻值增大了20-40Ω，所述的扩散层的厚度降低了0.1-0.2um。
所使用的混合溶液中NaOH：H2O2：H20摩尔比比例为1:1:5-1:1:10；
化学反应式：Si+2NaOH+H20＝Na2SIO3+2H2↑
St3：将硅片放入用氢氟酸和盐酸的混合溶液中2-3min，去除硅片表面的金属杂质并防止激光槽内的金属杂质被氧化在硅表面形成氧化膜。
化学反应式：XO+HF→X(金属)++F-+H20；X(金属)++Cl-＝XCl↓
St4：将硅片浸渍在30-60℃的热水中1-3min进行清洗，去除硅片表面脏污和溶液残留。
以上所述的St2-St4，所述的硅片从一种溶液取出后，将硅片先用去离子水清洗烘干后再放入下一个步骤的溶液中，以避免污染。
经修复后的硅片的背面氮化硅层的表面和激光槽的底面平坦，减少了光电子复合中心。且所用的化学试剂不仅去除激光槽底部的氧化膜，降低了接触电阻，还通过对高浓度掺杂磷元素的表面进行深度腐蚀，优化发射区。
由于太阳能电池片在使用的光程中，由于会存在电势诱导衰减现象，为了提高电池片的使用寿命和光电转换效率，需要在发射极表面进行氧化保护处理以提高电池片的抗电势诱导衰减能力。
S7：正面镀膜：将硅片防止臭氧中，在电池的正面形成一层SiO2膜后，用PECVD法在硅片的正表面沉积一层第二氮化硅薄膜层。所述的SiO2膜为致密膜，能够提高太阳能电池的抗PID能力，所述的第二氮化硅薄膜层为减反射层。
由于S6中使用的多种化学溶液，会对SiO2膜和氮化硅薄膜有腐蚀作用，因此本发明中采用的是先在硅片的背面进行激光开槽和修复优化处理，再在硅片的正面沉积保护膜。同时硅片表面的保护膜会阻碍氢氟酸和盐酸的混合溶液对扩散层的深度腐蚀，降低对发射极的优化效果，因此需要将硅片背面的优化放置在正面镀膜之前。
本发明中通过S6中的修复优化处理，可以使得太阳能电池片的开压提升2-3mV，转换效率提升0.1-0.2％。
S8：电极制作：采用丝网印刷法先后在硅片的背面和正面印刷制作背电极、背电场和正电极，经烘干后，将硅片放入烧结炉中进行烧结，烧结峰值温度为770-800℃。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (6)
1.一种背面钝化的P型晶体硅太阳能电池的制作方法，制作电池所用的晶体硅片为含B的P型晶体硅片，包括以下步骤：
S1：表面制绒：采用清洗液对晶体硅片的两侧的表面进行清洗、腐蚀，在晶体硅片的表面形成陷光结构；
S2：制作PN结：将两块晶体硅片的背面背对背放入高温扩散炉中，在惰性气体的保护下，向炉内通入的POCl3和O2气体在700℃-900℃下发生化学反应，形成的磷元素扩散至与气体接触的扩散层中，与P型晶体硅片形成PN结；
S3：蚀刻抛光：将硅片放入HNO3和HF的清洗液中，去除磷硅玻璃和硅片侧面的PN结，同时对硅片的背面进行抛光处理；
S4：背面钝化：在硅片的背面用原子沉积法或PECVD法先后沉积氧化铝膜和第一氮化硅薄膜的钝化层；
S5：激光开槽：在硅片的背面采用激光开槽法在电极栅极线所在的位置进行开槽，所开的激光槽贯穿钝化层，激光槽的底面与硅基底相接触；
S6：修复优化：采用化学蚀刻法对硅片背面的激光槽的底面与侧壁进行平坦化修复处理，并对硅片正面扩散层进行刻蚀；
S7：正面镀膜：将硅片放置臭氧中，在电池的正面形成一层SiO2膜后，用PECVD法在硅片的表面沉积一层第二氮化硅薄膜；
S8：电极制作：采用丝网印刷法先后在硅片的背面和正面印刷制作背电极和正电极，经烘干后，将硅片置于烧结炉中进行烧结。
2.根据权利要求1所述的一种背面钝化的P型晶体硅太阳能电池的制作方法，其特征在于：所述的S6包括以下步骤：
St1:将硅片放入温度为20-60℃，浓度为1％-10％的HF酸溶液除去激光槽底面与侧壁氧化层；
St2：将硅片放入氢氧化钠和双氧水的混合溶液，所述的混合溶液去除激光对钝化层表面造成的机械损伤和毛刺，同时对硅片正面扩散层进行刻蚀；所使用的混合溶液中NaOH：H2O2：H20的摩尔比为1:1:5-1:1:10；
St3:将硅片放入用氢氟酸和盐酸的混合溶液2-3min，去除硅片表面金属杂质并脱水；；
St4:将硅片浸渍在30-60℃的热水中1-3min；
以上所述的St2-St4，所述的硅片从一种溶液取出后，将硅片先用去离子水清洗烘干后再放入下一个步骤的溶液中。
3.根据权利要求1所述的一种背面钝化的P型晶体硅太阳能电池的制作方法，其特征在于：S4中所沉积的氧化铝膜的膜厚为18-28nm。
4.根据权利要求1所述的一种背面钝化的P型晶体硅太阳能电池的制作方法，其特征在于：S4中所沉积的第一氮化硅薄膜的膜厚为120-150nm。
5.根据权利要求1所述的一种背面钝化的P型晶体硅太阳能电池的制作方法，其特征在于：S5中所形成的激光槽的宽度为30-60μm。
6.根据权利要求1或2所述的一种背面钝化的P型晶体硅太阳能电池的制作方法，其特征在于：经S6对硅片的扩散层进行优化后，所述的扩散层的方阻增大了20-40Ω，所述的扩散层的厚度减小了0.1-0.2μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810010663.XA CN108336169A (zh) | 2018-01-05 | 2018-01-05 | 一种背面钝化的p型晶体硅太阳能电池的制作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810010663.XA CN108336169A (zh) | 2018-01-05 | 2018-01-05 | 一种背面钝化的p型晶体硅太阳能电池的制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108336169A true CN108336169A (zh) | 2018-07-27 |
Family
ID=62923936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810010663.XA Pending CN108336169A (zh) | 2018-01-05 | 2018-01-05 | 一种背面钝化的p型晶体硅太阳能电池的制作方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108336169A (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616556A (zh) * | 2018-12-18 | 2019-04-12 | 韩华新能源（启东）有限公司 | 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法 |
| CN109994553A (zh) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | 一种三层介电钝化膜perc太阳电池及制作工艺 |
| CN110416323A (zh) * | 2019-07-10 | 2019-11-05 | 天津爱旭太阳能科技有限公司 | 一种背面金属化接触区具有钝化层的perc电池及其制备方法 |
| CN110828585A (zh) * | 2019-11-19 | 2020-02-21 | 浙江晶科能源有限公司 | 一种钝化接触太阳能电池及其制作方法 |
| CN111009588A (zh) * | 2019-10-14 | 2020-04-14 | 中建材浚鑫科技有限公司 | 一种perc电池及其制备方法 |
| CN113241391A (zh) * | 2021-04-29 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | 一种减少背场复合损失的perc电池加工工艺 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354716A (zh) * | 2011-10-14 | 2012-02-15 | 苏州阿特斯阳光电力科技有限公司 | 一种激光打孔后硅片的处理方法 |
| CN103456837A (zh) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | 局部背场钝化太阳能电池的制造方法 |
| CN103618021A (zh) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | 一种mwt电池的制作方法 |
| CN104009118A (zh) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | 一种高效n型晶体硅刻槽埋栅电池的制备方法 |
| CN104868019A (zh) * | 2015-04-13 | 2015-08-26 | 北京工业大学 | 一种激光刻栅a-Si/c-Si径向异质结电池及其制备方法 |
| CN106104814A (zh) * | 2014-03-12 | 2016-11-09 | 康斯坦茨大学 | 用于生产具有同时回蚀刻的掺杂区的太阳能电池的方法 |
-
2018
- 2018-01-05 CN CN201810010663.XA patent/CN108336169A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354716A (zh) * | 2011-10-14 | 2012-02-15 | 苏州阿特斯阳光电力科技有限公司 | 一种激光打孔后硅片的处理方法 |
| CN103456837A (zh) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | 局部背场钝化太阳能电池的制造方法 |
| CN103618021A (zh) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | 一种mwt电池的制作方法 |
| CN106104814A (zh) * | 2014-03-12 | 2016-11-09 | 康斯坦茨大学 | 用于生产具有同时回蚀刻的掺杂区的太阳能电池的方法 |
| CN104009118A (zh) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | 一种高效n型晶体硅刻槽埋栅电池的制备方法 |
| CN104868019A (zh) * | 2015-04-13 | 2015-08-26 | 北京工业大学 | 一种激光刻栅a-Si/c-Si径向异质结电池及其制备方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616556A (zh) * | 2018-12-18 | 2019-04-12 | 韩华新能源（启东）有限公司 | 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法 |
| CN109994553A (zh) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | 一种三层介电钝化膜perc太阳电池及制作工艺 |
| CN110416323A (zh) * | 2019-07-10 | 2019-11-05 | 天津爱旭太阳能科技有限公司 | 一种背面金属化接触区具有钝化层的perc电池及其制备方法 |
| CN111009588A (zh) * | 2019-10-14 | 2020-04-14 | 中建材浚鑫科技有限公司 | 一种perc电池及其制备方法 |
| CN110828585A (zh) * | 2019-11-19 | 2020-02-21 | 浙江晶科能源有限公司 | 一种钝化接触太阳能电池及其制作方法 |
| CN113241391A (zh) * | 2021-04-29 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | 一种减少背场复合损失的perc电池加工工艺 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108336169A (zh) | 一种背面钝化的p型晶体硅太阳能电池的制作方法 | |
| CN101777603B (zh) | 背接触太阳能电池的制造方法 | |
| CN111564503B (zh) | 一种背结背接触太阳能电池结构及其制备方法 | |
| KR101673565B1 (ko) | 태양 전지 및 이의 제조방법 | |
| CN104037257B (zh) | 太阳能电池及其制造方法、单面抛光设备 | |
| CN101777606B (zh) | 一种晶体硅太阳电池选择性扩散工艺 | |
| JP2020520560A (ja) | 管型ｐｅｒｃ片面太陽電池、その製造方法及びその専用装置 | |
| CN106992229A (zh) | 一种perc电池背面钝化工艺 | |
| CN102456771A (zh) | 硅晶片太阳能电池的制造方法 | |
| CN105576083A (zh) | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 | |
| CN112510121B (zh) | 一种perc电池碱抛前后保护工艺 | |
| CN105810779A (zh) | 一种perc太阳能电池的制备方法 | |
| CN106057975A (zh) | 一种perc太阳能电池的制备方法 | |
| CN112466986A (zh) | 一种选择性发射极电池的碱抛光制造方法 | |
| CN111341880A (zh) | 太阳能电池的制造方法 | |
| CN208336240U (zh) | 太阳能电池及太阳能电池组件 | |
| CN114447142A (zh) | 一种N型TOPCon太阳能电池及其制作方法 | |
| CN107452837A (zh) | 一种电池片背部钝化工艺 | |
| CN113921649A (zh) | 一种硅基异质结太阳能电池制备方法 | |
| CN105244417B (zh) | 一种晶硅太阳能电池及其制备方法 | |
| CN105696083A (zh) | 一种太阳能电池绒面的制备方法 | |
| CN214043685U (zh) | 背接触电池 | |
| CN111755563B (zh) | 一种p型单晶硅硼背场双面电池及其制备方法 | |
| CN108010990A (zh) | 一种晶体硅太阳能电池片的制作方法 | |
| CN110785856B (zh) | 高效太阳能电池的制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180727 |