CN103618021A - 一种mwt电池的制作方法 - Google Patents
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Abstract
本发明公开了一种MWT电池的制作方法,包括如下步骤:制绒、扩散、镀减反膜、背钝化、激光刻蚀、清洗、氧化、填充隔离槽、印刷、高温烧结。其中激光刻蚀步骤:采用激光在硅片上穿通孔,在钝化膜上刻电极隔离槽、铝浆和硅片的接触槽,其中隔离槽宽5-10μm,深20-80μm;接触槽宽20-100μm;所述通孔的直径为100-300μm;隔离槽把通孔包围,隔离槽边缘与背面正电极的边缘距离大于100μm。氧化步骤:通过CVD在通孔的孔壁,以及隔离槽的底部和侧壁分别氧化一层二氧化硅层,所述二氧化硅层厚度为5-20nm;本发明更进一步的提高了MWT电池的效率。
Description
技术领域
本发明涉及一种电池的制作方法,具体涉及一种MWT电池的制作方法。
背景技术
MWT电池是一种新型太阳能电池结构,它的特点是电池的发射区和基区电极均位于电池背面的一种电池。这种电池的优点是:正面遮光面积的减小或消除,提高了电池的受光面积,提高电池的效率;组件封装无需进行正面焊接,组件封装密度提高,且更美观。但是如何进一步提高MWT电池的种种优点,使其成为现阶段光伏行业研究的一个重点方向。
发明内容
本发明所要解决的技术问题是提供一种MWT电池的制作方法,更进一步的提高了MWT电池的效率。
本发明解决技术问题所采用的技术方案是:一种MWT电池的制作方法,其特征在于,包括如下步骤:
(1)制绒:通过酸制绒,去除硅片表面的损伤层,控制其形貌,降低反射率;
(2)扩散:扩散三氯氧磷形成PN结,方阻110ohm/sq;
(3)镀减反膜:在硅片正面镀一层氮化硅减反膜,其厚度为70-90nm;
(4)背钝化:电池背面采用双层钝化膜钝化,所述第一层钝化膜带负电性,第二层钝化膜带正电性,所述第一层钝化膜的厚度为5-30nm,第二层钝化膜的厚度为50-200nm;
(5)激光刻蚀:采用激光在硅片上穿通孔,在钝化膜上刻电极隔离槽、铝浆和硅片的接触槽, 所述隔离槽宽5-10μm,深20-80μm;所述接触槽宽20-100μm;所述通孔的直径为100-300μm;所述隔离槽把通孔包围,隔离槽边缘与背面正电极的边缘距离大于100μm;
(6)清洗:激光刻蚀步骤后,在80℃,10%-20%浓度的氢氧化钠溶液浸泡5-10分钟去除激光过程中的损伤层;
(7)氧化:通过CVD在通孔的孔壁,以及隔离槽的底部和侧壁分别氧化一层二氧化硅层,所述二氧化硅层厚度为5-20nm;
(8)填充隔离槽:在隔离槽中填充绝缘材料,并烘干;
(9)印刷:进行背面正电极的堵孔浆料印刷、背场的铝浆印刷和正面电极印刷,堵孔浆料印刷和背场铝浆印刷时不能接触隔离槽,且背场铝浆印刷与隔离槽的距离大于100μm;正面电极印刷时和通孔浆料充分接触,以便把收集到的电流送到背面;
(10)高温烧结:在200℃下烘干后,通过900℃的高温过程形成电极和硅片的良好欧姆接触。
作为一种优选,所述步骤(8)填充隔离槽中的绝缘材料为聚硅氮烷。
本发明的有益效果是: 电池的通孔孔壁上采用二氧化硅膜保护,改善电极与硅片接触的界面态;电池背面正电极和背场之间刻隔离槽,且在隔离槽内填充绝缘材料,减小电池片的漏电;电池背面采用双层钝化膜, 提高了电池片的开压。
附图说明
图1为本发明实施例MWT电池的剖视结构示意图。
图2为本发明实施例MWT电池的背面结构示意图。
下面结合附图对本发明做进一步说明。
具体实施方式
结合附图1、2所示,一种MWT电池的制作方法,包括如下步骤:
(1)制绒:通过酸制绒,去除硅片表面的损伤层,控制其形貌,降低反射率;
(2)扩散:扩散三氯氧磷形成PN结,方阻110ohm/sq;
(3)镀减反膜:在硅片正面镀一层氮化硅减反膜1,其厚度为75nm;
(4)背钝化:电池背面采用双层钝化膜钝化,所述第一层钝化膜2带负电性,第二层钝化膜3带正电性,所述第一层钝化膜2的厚度为5nm,第二层钝化膜3的厚度为60nm;
(5)激光刻蚀:采用激光在硅片上穿通孔5,在钝化膜上刻电极隔离槽7、铝浆和硅片的接触槽10, 所述隔离槽宽5μm,深25μm; 所述接触槽宽20μm;所述通孔的直径为200μm;所述隔离槽7把通孔包围,隔离槽边缘与背面正电极的边缘距离为110μm;
(6)清洗:激光刻蚀步骤后,在80℃,16%浓度的氢氧化钠溶液浸泡8分钟去除激光过程中的损伤层;
(7)氧化:通过CVD在通孔5的孔壁6,以及隔离槽7的底部和侧壁分别氧化一层二氧化硅层,所述二氧化硅层厚度为10nm;
(8)填充隔离槽:在隔离槽7中填充绝缘材料聚硅氮烷8,并烘干;
(9)印刷:进行背面正电极9的堵孔浆料印刷、背场4的铝浆印刷和正面电极印刷,堵孔浆料印刷和背场铝浆印刷时不能接触隔离槽,且背场铝浆印刷与隔离槽的距离为110μm;正面电极印刷时和通孔浆料充分接触,以便把收集到的电流送到背面;
(10)高温烧结:在200℃下烘干后,通过900℃的高温过程形成电极和硅片的良好欧姆接触。
Claims (2)
1.一种MWT电池的制作方法,其特征在于,包括如下步骤:
(1)制绒:通过酸制绒,去除硅片表面的损伤层,控制其形貌,降低反射率;
(2)扩散:扩散三氯氧磷形成PN结,方阻110ohm/sq;
(3)镀减反膜:在硅片正面镀一层氮化硅减反膜,其厚度为70-90nm;
(4)背钝化:电池背面采用双层钝化膜钝化,所述第一层钝化膜带负电性,第二层钝化膜带正电性,所述第一层钝化膜的厚度为5-30nm,第二层钝化膜的厚度为50-200nm;
(5)激光刻蚀:采用激光在硅片上穿通孔,在钝化膜上刻电极隔离槽、铝浆和硅片的接触槽, 所述隔离槽宽5-10μm,深20-80μm;所述接触槽宽20-100μm;所述通孔的直径为100-300μm;所述隔离槽把通孔包围,隔离槽边缘与背面正电极的边缘距离大于100μm;
(6)清洗:激光刻蚀步骤后,在80℃,10%-20%浓度的氢氧化钠溶液浸泡5-10分钟去除激光过程中的损伤层;
(7)氧化:通过CVD在通孔的孔壁,以及隔离槽的底部和侧壁分别氧化一层二氧化硅层,所述二氧化硅层厚度为5-20nm;
(8)填充隔离槽:在隔离槽中填充绝缘材料,并烘干;
(9)印刷:进行背面正电极的堵孔浆料印刷、背场的铝浆印刷和正面电极印刷,堵孔浆料印刷和背场铝浆印刷时不能接触隔离槽,且背场铝浆印刷与隔离槽的距离大于100μm;正面电极印刷时和通孔浆料充分接触,以便把收集到的电流送到背面;
(10)高温烧结:在200℃下烘干后,通过900℃的高温过程形成电极和硅片的良好欧姆接触。
2.如权利要求1所述的一种MWT电池的制作方法,其特征在于,所述步骤(8)填充隔离槽中的绝缘材料为聚硅氮烷。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104409574A (zh) * | 2014-12-09 | 2015-03-11 | 苏州阿特斯阳光电力科技有限公司 | 一种具有通孔结构的太阳能电池的制备方法 |
CN104538502A (zh) * | 2015-01-16 | 2015-04-22 | 浙江晶科能源有限公司 | 一种晶体硅mwt太阳能电池的制作方法 |
CN108183147A (zh) * | 2017-12-15 | 2018-06-19 | 南京日托光伏科技股份有限公司 | 一种mwt硅太阳能电池的制备方法 |
CN108336169A (zh) * | 2018-01-05 | 2018-07-27 | 南通苏民新能源科技有限公司 | 一种背面钝化的p型晶体硅太阳能电池的制作方法 |
CN111211179A (zh) * | 2019-10-30 | 2020-05-29 | 横店集团东磁股份有限公司 | 一种mwt太阳电池背电场结构及其制造方法 |
WO2024021708A1 (zh) * | 2022-07-29 | 2024-02-01 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片及其制作方法 |
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CN102386249A (zh) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | 一种下一代结构高效率晶体硅电池及制作方法 |
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CN102386249A (zh) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | 一种下一代结构高效率晶体硅电池及制作方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409574A (zh) * | 2014-12-09 | 2015-03-11 | 苏州阿特斯阳光电力科技有限公司 | 一种具有通孔结构的太阳能电池的制备方法 |
CN104538502A (zh) * | 2015-01-16 | 2015-04-22 | 浙江晶科能源有限公司 | 一种晶体硅mwt太阳能电池的制作方法 |
CN108183147A (zh) * | 2017-12-15 | 2018-06-19 | 南京日托光伏科技股份有限公司 | 一种mwt硅太阳能电池的制备方法 |
CN108336169A (zh) * | 2018-01-05 | 2018-07-27 | 南通苏民新能源科技有限公司 | 一种背面钝化的p型晶体硅太阳能电池的制作方法 |
CN111211179A (zh) * | 2019-10-30 | 2020-05-29 | 横店集团东磁股份有限公司 | 一种mwt太阳电池背电场结构及其制造方法 |
WO2024021708A1 (zh) * | 2022-07-29 | 2024-02-01 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片及其制作方法 |
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