CN109659399A - 一种mwt小掩膜太阳能电池的制备方法 - Google Patents
一种mwt小掩膜太阳能电池的制备方法 Download PDFInfo
- Publication number
- CN109659399A CN109659399A CN201811633317.3A CN201811633317A CN109659399A CN 109659399 A CN109659399 A CN 109659399A CN 201811633317 A CN201811633317 A CN 201811633317A CN 109659399 A CN109659399 A CN 109659399A
- Authority
- CN
- China
- Prior art keywords
- mwt
- preparation
- exposure mask
- silicon
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000002002 slurry Substances 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 24
- 238000007650 screen-printing Methods 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 11
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 11
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 11
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910003978 SiClx Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 4
- 229910017107 AlOx Inorganic materials 0.000 description 3
- 229910019213 POCl3 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种MWT小掩膜太阳能电池的制备方法,属于硅太阳能电池工艺技术领域,在保证MWT可靠性的前提下,降低了掩膜浆料的用量、降低了刻蚀工序去除掩膜浆料所需的化学品用量,节约了整个制程成本。本发明包括以下步骤:激光打孔、制绒、扩散、掩膜、刻蚀、退火、背面钝化层制备、背面保护膜、正面减反膜、激光开槽、MWT背面正极制备、MWT背面负极制备、铝背场制备、正面栅线电极、烧结。
Description
技术领域
本发明属于硅太阳能电池工艺技术领域,尤其涉及一种MWT小掩膜太阳能电池的制备方法。
背景技术
金属穿孔卷绕硅太阳能电池(MWT)因其效率高,遮光面积小以及更好的外观特点受到越来越多的关注。MWT硅太阳能电池是通过激光钻孔将正面收集的能量穿过电池转移至电池背面,以减少遮光面积来达到提高转换效率的目的。专利CN201410016190.6提供了一种MWT的低成本制备方法,该方法在传统晶硅电池的制作流程上仅增加两道工序,即:在制绒工序前增加一道激光打孔工序和在扩散后或镀膜后增加一道孔洞处绝缘的工序。由于该方法工艺简单,增加设备少,成为目前业内MWT电池生产唯一量产的工艺。
局部接触背钝化(PERC)太阳能电池是最近两年新开发出来的一种高效太阳能电池技术,得到了业内的广泛关注。如专利CN201410484916.9提供了一种丝网印刷纳米氧化铝或氧化硅制备钝化层的技术;专利CN201710054179.2提供了一种低复合率的单晶PERC电池工艺方案;专利CN201710125141.X提供了一种P型PERC双面太阳能电池的工艺方案。PERC电池工艺技术的核心是在硅片的背光面用氧化铝或氧化硅薄膜覆盖,起到钝化表面提高长波响应,从而提高电池的转换效率。
由于MWT电池制程与常规电池制程除激光打孔和绝缘隔离两方面的要求外再无其他差异,使得MWT电池可以兼容黑硅、PERC、HIT、IBC等技术。其中,专利CN201410016190.6同时提供了一种MWT结合PERC技术的制备流程。专利CN201510612566.4提供了一种背钝化膜制备工艺解决MWT孔洞漏电问题。
目前常规MWT路线,增加一道掩膜工序实现MWT电池正负极区的绝缘,且为实现绝缘效果,掩膜图案的尺寸将大于MWT电池负极图案的尺寸。但是这种方案增加了掩膜浆料本身的用量,同时也增加了后续去除掩膜浆料的化学品用量,增加了整个制程的成本。
发明内容
本发明提供了一种MWT小掩膜太阳能电池的制备方法,在保证MWT可靠性的前提下,降低了掩膜浆料的用量、降低了刻蚀工序去除掩膜浆料所需的化学品用量,节约了整个制程成本。
为实现以上目的,本发明采用以下技术方案:
一种MWT小掩膜太阳能电池的制备方法,包括以下步骤:
(1)激光打孔:将硅片按MWT图形要求,使用激光器在硅片上开孔;
(2)制绒:去除硅片表面的损伤层,降低光生载流子的复合速率;同时在硅片表面制成绒面降低反射率;
(3)扩散:在步骤(2)制绒后的硅片衬底沉积掺杂源并进行扩散制备PN结,硅片采用背靠背的方式在扩散炉里进行单面扩散,扩散方阻控制在30Ω-150Ω;
(4)掩膜:通过印刷或打印方式,按MWT图形要求,在孔洞内制备掩膜层,同时在硅片背面且与MWT电池负极点对应的区域制备掩膜图案,掩膜图案为圆形或其他多边形,直径为0.1mm-3mm;
(5)刻蚀:采用湿化学方式去除扩散后硅片周边及背面的PN结;采用碱或二乙二醇单丁醚去除正面及孔洞内的掩膜浆料;去除磷硅玻璃,并进行背面抛光;
(6)退火:采用常规常压扩散炉,600℃-750℃温度下对刻蚀后硅片进行20min-50min退火处理;
(7)背面钝化层制备:采用化学气相沉积(CVD)、原子层沉积(ALD)或丝网印刷方式在硅片背面或双面制备一层氧化铝层,氧化铝层厚度为2-30nm;
(8)背面保护膜:采用化学气相沉积(PECVD)制备背面氮化硅保护膜,氮化硅保护膜的折射率为1.9-2.3,厚度为80-160nm;
(9)正面减反膜:采用化学气相沉积(PECVD)制备正面氮化硅减反膜,氮化硅减反膜的折射率为1.9-2.2,厚度为60-100nm;
(10)激光开槽:采用激光将背面的氧化铝钝化层和氮化硅保护层进行开槽,以便铝背场浆料和硅基体形成欧姆接触;
(11)MWT背面正极制备:采用丝网印刷方式,常规PERC背银浆料,在硅片背面制备MWT背面电极的正极;
(12)MWT背面负极制备:采用丝网印刷方式,MWT堵孔银浆料,在硅片背面制备MWT背面电极的负极,并进行堵孔,负极为圆形或多边形,直径为1-2mm;
(13)铝背场制备:采用丝网印刷方式,在硅片背面制备铝背场;
(14)正面栅线电极:采用丝网印刷方式在MWT电池片正面制备正面栅线电极;
(15)烧结:将印刷后浆料的电池片共烧形成欧姆接触。
有益效果:本发明提供了一种MWT小掩膜太阳能电池的制备方法,通过技术路线的创新和堵孔浆料的开发,实现掩摸直径小于负极点而不形成漏电,此时掩膜仅仅是进行堵孔,防止在刻蚀工序引起的工艺问题。而常规MWT电池,需要通过掩摸进行绝缘,掩摸的直径要大于负极点的直径。否则负极点在超出掩摸区域的地方会形成漏电通道。本发明通过MWT堵孔银浆和刻蚀工序的优化,MWT堵孔银浆配方上降低了玻璃粉的用量或调整了其穿透性的成分,在保证组件拉力可靠性的情况下,降低浆料穿透性,避免掩膜尺寸降低后负极区的银浆穿透氮化硅膜与非掩膜保护区域的基体直接导通形成漏电区;彻底实现掩摸工序的取消,实现了在保证MWT可靠性的前提下,降低了掩膜浆料的用量、降低了刻蚀工序去除掩膜浆料所需的化学品用量,节约了整个制程成本。
附图说明
图1为MWT电池的激光打孔图案;
图2为MWT掩膜图案;
图3为MWT背面电极的负极。
具体实施方式
下面结合附图和具体实施例对本发明进行详细说明:
实施例1
一种MWT小掩膜太阳能电池的制备方法,包括以下步骤:
(1)硅片:采用太阳能级P型单晶作为衬底;
(2)激光打孔:将硅片按如图1所示的6×6阵列图案,使用激光器在电池片上相应的激光孔洞;
(3)制绒:采用常规化学清洗和织构化方法进行清洗和织构化,去除硅片表面的损伤层,降低光生载流子的复合速率;同时在硅片表面制成绒面降低反射率;
(4)扩散:使用POCl3扩散源进行高温背靠背单面扩散,扩散方阻控制在30-150Ω;
(5)掩膜印刷:通过丝网印刷方式,按如图2所示的6×6图案,在硅片背面(非扩散面)及孔洞内制备掩膜层,掩膜图形采用圆形直径为0.1mm;
(6)刻蚀:采用常规化学溶液进行化学后清洗,去除周边及背面PN结,去除扩散后硅衬底表面形成的磷硅玻璃,并进行背面抛光;采用碱或二乙二醇单丁醚去除正面及孔洞内的掩膜浆料;
(7)退火:采用常规常压扩散炉,600℃温度下对刻蚀后硅片进行20min退火处理;
(8)背面钝化层制备:采用化学气相沉积(CVD)在电池片背面镀一层2nm厚度的AlOx钝化膜;
(9)背面保护膜:采用PECVD设备制备折射率为1.9,膜厚为80nm的氮化硅保护膜;
(10)正面减反膜:采用PECVD设备制备折射率为1.9,膜厚在60nm的氮化硅减反膜;
(11)激光开槽:用激光将背面的氧化铝和氮化硅保护膜开槽,以便铝背场浆料和硅基体形成欧姆接触;
(12)MWT背面正极制备:采用丝网印刷方式,常规PERC背银浆料,在硅片背面制备MWT背面电极的正极;
(13)MWT背面负极制备:采用丝网印刷方式,MWT专用堵孔浆料,在硅片背面制备如图3所示的MWT背面电极的负极,同时进行堵孔;负极为圆形,直径为1mm。
(14)铝背场印刷:采用丝网印刷方式,在硅片背面制备铝背场;
(15)正面栅线电极:采用丝网印刷方式,在MWT电池正面,印刷MWT电池正面栅线电极结构;
(16)烧结:将印刷后浆料的电池片共烧形成欧姆接触。
实施例2
一种MWT小掩膜太阳能电池的制备方法,包括以下步骤:
(1)硅片:采用太阳能级多晶硅片作为衬底;
(2)激光打孔:将硅片按如图1所示的6×6阵列图案,使用激光器在电池片上相应的激光孔洞;
(3)制绒:采用常规化学清洗和织构化方法进行清洗和织构化,去除硅片表面的损伤层,降低光生载流子的复合速率;同时在硅片表面制成绒面降低反射率;
(4)扩散:使用POCl3扩散源进行高温背靠背单面扩散,扩散方阻控制在30-150Ω;
(5)掩膜印刷:通过丝网印刷方式,按如图2所示的6×6图案,在硅片背面(非扩散面)及孔洞内制备掩膜层,掩膜图形采用圆形直径为3mm;
(6)刻蚀:采用常规化学溶液进行化学后清洗,去除周边及背面PN结,去除扩散后硅衬底表面形成的磷硅玻璃,并进行背面抛光;采用碱或二乙二醇单丁醚去除正面及孔洞内的掩膜浆料;
(7)退火:采用常规常压扩散炉, 750℃温度下对刻蚀后硅片进行50min退火处理;
(8)背面钝化层制备:采用原子层沉积(ALD)在电池片双面镀一层30nm厚度的AlOx钝化膜;
(9)背面保护膜:采用PECVD设备制备折射率为2.3,膜厚为160nm的氮化硅保护膜;
(10)正面减反膜:采用PECVD设备制备折射率为2.2,膜厚在100nm的氮化硅减反膜;
(11)激光开槽:用激光将背面的氧化铝和氮化硅保护膜开槽,以便铝背场浆料和硅基体形成欧姆接触;
(12)MWT背面正极制备:采用丝网印刷方式,常规PERC背银浆料,在硅片背面制备MWT背面电极的正极;
(13)MWT背面负极制备:采用丝网印刷方式,MWT专用堵孔浆料,在硅片背面制备如图3所示的MWT背面电极的负极和同时进行堵孔;负极为圆形,直径为2mm;
(14)铝背场印刷:采用丝网印刷方式,在硅片背面制备铝背场;
(15)正面栅线电极:采用丝网印刷方式,在MWT电池正面,印刷MWT电池正面栅线电极结构;
(16)烧结:将印刷后浆料的电池片共烧形成欧姆接触。
实施例3
一种MWT小掩膜太阳能电池的制备方法,包括以下步骤:
(1)硅片:采用太阳能级多晶硅片作为衬底;
(2)激光打孔:将硅片按如图1所示的6×6阵列图案,使用激光器在电池片上相应的激光孔洞;
(3)制绒:采用常规化学清洗和织构化方法进行清洗和织构化,去除硅片表面的损伤层,降低光生载流子的复合速率;同时在硅片表面制成绒面降低反射率;
(4)扩散:使用POCl3扩散源进行高温背靠背单面扩散,扩散方阻控制在30-150Ω;
(5)掩膜印刷:通过丝网印刷方式,按如图2所示的6×6图案,在硅片背面(非扩散面)及孔洞内制备掩膜层,掩膜图形采用圆形直径为2mm;
(6)刻蚀:采用常规化学溶液进行化学后清洗,去除周边及背面PN结,去除扩散后硅衬底表面形成的磷硅玻璃,并进行背面抛光;采用碱或二乙二醇单丁醚去除正面及孔洞内的掩膜浆料;
(7)退火:采用常规常压扩散炉, 700℃温度下对刻蚀后硅片进行30min退火处理;
(8)背面钝化层制备:采用丝网印刷在电池片背面镀一层20nm厚度的AlOx钝化膜;
(9)背面保护膜:采用PECVD设备制备折射率为2,膜厚为100nm的氮化硅保护膜;
(10)正面减反膜:采用PECVD设备制备折射率为2,膜厚在80nm的氮化硅减反膜;
(11)激光开槽:用激光将背面的氧化铝和氮化硅保护膜开槽;刻槽图案如图2所示;
(12)MWT背面正极制备:采用丝网印刷方式,常规PERC背银浆料,在硅片背面制备MWT背面电极的正极;
(13)MWT背面负极制备:采用丝网印刷方式,MWT专用堵孔浆料,在硅片背面制备如图3所示的MWT背面电极的负极和同时进行堵孔;负极为圆形,直径为1.5mm;
(14)铝背场印刷:采用丝网印刷方式,在硅片背面制备铝背场;
(15)正面栅线电极:采用丝网印刷方式,在MWT电池正面,印刷MWT电池正面栅线电极结构;
(16)烧结:将印刷后浆料的电池片共烧形成欧姆接触。
以上实施例仅是本发明优选实施方式,而非对本发明的限制,有关技术领域的技术人员,在不脱离本发明的精神和范围的情况下,所作出各种变换或变型,均属于本发明的范畴。
Claims (7)
1.一种MWT小掩膜太阳能电池的制备方法,其特征在于,包括以下步骤:
(1)激光打孔:将硅片按MWT图形要求,使用激光器在硅片上开孔;
(2)制绒:去除硅片表面的损伤层,同时在硅片表面制成绒面;
(3)扩散:在步骤(2)制绒后的硅片衬底沉积掺杂源并进行扩散制备PN结;
(4)掩膜:通过印刷或打印方式,按MWT图形要求,在孔洞内制备掩膜层,同时在硅片背面且与MWT电池负极点对应的区域制备掩膜图案;
(5)刻蚀:采用湿化学方式去除扩散后硅片周边及背面的PN结;采用碱或二乙二醇单丁醚去除正面及孔洞内的掩膜浆料;去除磷硅玻璃,并进行背面抛光;
(6)退火:采用常规常压扩散炉,600℃-750℃温度下对刻蚀后硅片进行20min-50min退火处理;
(7)背面钝化层制备:采用化学气相沉积(CVD)、原子层沉积(ALD)或丝网印刷方式在硅片背面或双面制备一层氧化铝层;
(8)背面保护膜:采用化学气相沉积(PECVD)制备背面氮化硅保护膜;
(9)正面减反膜:采用化学气相沉积(PECVD)制备正面氮化硅减反膜;
(10)激光开槽:采用激光将背面的氧化铝钝化层和氮化硅保护层进行开槽,使铝背场浆料和硅基体形成欧姆接触;
(11)MWT背面正极制备:使用常规PERC背银浆料在硅片背面制备MWT背面电极的正极;
(12)MWT背面负极制备:使用MWT专用堵孔浆料在硅片背面制备MWT背面电极的负极,并进行堵孔,负极为圆形或多边形,直径为1-2mm;
(13)铝背场制备:采用丝网印刷方式,在硅片背面制备铝背场;
(14)正面栅线电极:采用丝网印刷方式在MWT电池片正面制备正面栅线电极;
(15)烧结:将印刷后浆料的电池片共烧形成欧姆接触。
2.根据权利要求1所述的MWT小掩膜太阳能电池的制备方法,其特征在于,步骤(3)中硅片采用背靠背的方式在扩散炉里进行单面扩散,扩散方阻为30Ω-150Ω。
3.根据权利要求1所述的MWT小掩膜太阳能电池的制备方法,其特征在于,步骤(4)中掩膜图案为圆形或其他多边形,直径为0.1mm-3mm。
4.根据权利要求1所述的MWT小掩膜太阳能电池的制备方法,其特征在于,步骤(7)中氧化铝层厚度为2-30nm。
5.根据权利要求1所述的MWT小掩膜太阳能电池的制备方法,其特征在于,步骤(8)中氮化硅保护膜的折射率为1.9-2.3,厚度为80-160nm。
6.根据权利要求1所述的MWT小掩膜太阳能电池的制备方法,其特征在于,步骤(9)中氮化硅减反膜的折射率为1.9-2.2,厚度为60-100nm。
7.根据权利要求1所述的MWT小掩膜太阳能电池的制备方法,其特征在于,步骤(11)和步骤(12)采用丝网印刷法制备正极和负极。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811633317.3A CN109659399A (zh) | 2018-12-29 | 2018-12-29 | 一种mwt小掩膜太阳能电池的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811633317.3A CN109659399A (zh) | 2018-12-29 | 2018-12-29 | 一种mwt小掩膜太阳能电池的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109659399A true CN109659399A (zh) | 2019-04-19 |
Family
ID=66116908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811633317.3A Pending CN109659399A (zh) | 2018-12-29 | 2018-12-29 | 一种mwt小掩膜太阳能电池的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109659399A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111029441A (zh) * | 2019-12-24 | 2020-04-17 | 遵义师范学院 | 一种栅线钝化接触perc太阳能电池及其制备方法 |
CN111987171A (zh) * | 2020-09-03 | 2020-11-24 | 江苏日托光伏科技股份有限公司 | 一种mwt电池片及其丝网印刷方法 |
CN113380907A (zh) * | 2021-06-08 | 2021-09-10 | 意诚新能(苏州)科技有限公司 | 一种新型太阳能电池片制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104934500A (zh) * | 2015-05-18 | 2015-09-23 | 润峰电力有限公司 | 一种选择性发射极的背钝化晶体硅太阳能电池的制备方法 |
CN107785456A (zh) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | 一种背接触太阳能电池的制备方法 |
CN108183147A (zh) * | 2017-12-15 | 2018-06-19 | 南京日托光伏科技股份有限公司 | 一种mwt硅太阳能电池的制备方法 |
CN108198906A (zh) * | 2017-12-29 | 2018-06-22 | 南京日托光伏科技股份有限公司 | 一种高效mwt太阳能电池的制备方法 |
CN108682699A (zh) * | 2018-05-22 | 2018-10-19 | 南京日托光伏科技股份有限公司 | 一种低成本的mwt太阳能电池正电极的制备方法 |
-
2018
- 2018-12-29 CN CN201811633317.3A patent/CN109659399A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104934500A (zh) * | 2015-05-18 | 2015-09-23 | 润峰电力有限公司 | 一种选择性发射极的背钝化晶体硅太阳能电池的制备方法 |
CN107785456A (zh) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | 一种背接触太阳能电池的制备方法 |
CN108183147A (zh) * | 2017-12-15 | 2018-06-19 | 南京日托光伏科技股份有限公司 | 一种mwt硅太阳能电池的制备方法 |
CN108198906A (zh) * | 2017-12-29 | 2018-06-22 | 南京日托光伏科技股份有限公司 | 一种高效mwt太阳能电池的制备方法 |
CN108682699A (zh) * | 2018-05-22 | 2018-10-19 | 南京日托光伏科技股份有限公司 | 一种低成本的mwt太阳能电池正电极的制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111029441A (zh) * | 2019-12-24 | 2020-04-17 | 遵义师范学院 | 一种栅线钝化接触perc太阳能电池及其制备方法 |
CN111987171A (zh) * | 2020-09-03 | 2020-11-24 | 江苏日托光伏科技股份有限公司 | 一种mwt电池片及其丝网印刷方法 |
CN113380907A (zh) * | 2021-06-08 | 2021-09-10 | 意诚新能(苏州)科技有限公司 | 一种新型太阳能电池片制作方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103794679B (zh) | 一种背接触太阳能电池的制备方法 | |
CN103904164B (zh) | 一种n型背结太阳能电池的制备方法 | |
CN109980022A (zh) | 一种p型隧穿氧化物钝化接触太阳能电池及其制备方法 | |
CN106098839B (zh) | 一种高效晶硅perc电池的制备方法 | |
CN108198903A (zh) | 一种背面镀膜处理的mwt太阳能电池的制备方法 | |
CN103594529A (zh) | Mwt与背钝化结合的晶硅太阳能电池及其制造方法 | |
CN206864484U (zh) | 一种钝化接触太阳能电池 | |
CN109802008B (zh) | 一种高效低成本n型背结pert双面电池的制造方法 | |
CN108198906A (zh) | 一种高效mwt太阳能电池的制备方法 | |
CN110112230A (zh) | 一种mwt太阳能电池的制备方法 | |
CN109659399A (zh) | 一种mwt小掩膜太阳能电池的制备方法 | |
CN104934500A (zh) | 一种选择性发射极的背钝化晶体硅太阳能电池的制备方法 | |
CN106409989A (zh) | 一种n型双面太阳电池及其制备方法 | |
CN105655424A (zh) | 全背场扩散n型硅基电池及其制备方法 | |
CN109768120A (zh) | 一种mwt无掩膜太阳能电池的制备方法 | |
CN107785457A (zh) | 一种p型双面晶硅太阳电池的制作工艺 | |
CN105826409B (zh) | 一种局部背场n型太阳能电池的制备方法 | |
CN108155250A (zh) | 一种低成本mwt硅太阳能电池及其制备方法 | |
CN105957921B (zh) | 一种利用印刷技术制备n型硅ibc太阳电池的方法 | |
CN102709389B (zh) | 一种双面背接触太阳能电池的制备方法 | |
CN103258728A (zh) | 硅片刻蚀的方法及太阳能电池片的制作方法 | |
CN205985009U (zh) | 一种ibc结构太阳能电池 | |
CN203674218U (zh) | Mwt与背钝化结合的晶硅太阳能电池 | |
CN108172637A (zh) | 一种多晶掺镓背钝化太阳电池及其制备方法 | |
CN108172642A (zh) | 一种单晶掺镓双面太阳电池及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190419 |