JP5988438B2 - 塗布処理方法及び塗布処理装置 - Google Patents

塗布処理方法及び塗布処理装置 Download PDF

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Publication number
JP5988438B2
JP5988438B2 JP2013124314A JP2013124314A JP5988438B2 JP 5988438 B2 JP5988438 B2 JP 5988438B2 JP 2013124314 A JP2013124314 A JP 2013124314A JP 2013124314 A JP2013124314 A JP 2013124314A JP 5988438 B2 JP5988438 B2 JP 5988438B2
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Japan
Prior art keywords
hard mask
masking
film
substrate
liquid
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JP2013124314A
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Japanese (ja)
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JP2014045171A (ja
Inventor
文子 岩尾
文子 岩尾
志村　悟
悟 志村
吉原　孝介
孝介 吉原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2013124314A priority Critical patent/JP5988438B2/ja
Priority to US13/952,739 priority patent/US8791030B2/en
Priority to TW102127455A priority patent/TWI540614B/zh
Priority to KR1020130091310A priority patent/KR101716926B1/ko
Publication of JP2014045171A publication Critical patent/JP2014045171A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2013124314A 2012-08-02 2013-06-13 塗布処理方法及び塗布処理装置 Active JP5988438B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013124314A JP5988438B2 (ja) 2012-08-02 2013-06-13 塗布処理方法及び塗布処理装置
US13/952,739 US8791030B2 (en) 2012-08-02 2013-07-29 Coating treatment method and coating treatment apparatus
TW102127455A TWI540614B (zh) 2012-08-02 2013-07-31 塗布處理方法及塗布處理裝置
KR1020130091310A KR101716926B1 (ko) 2012-08-02 2013-08-01 도포 처리 방법 및 도포 처리 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012171605 2012-08-02
JP2012171605 2012-08-02
JP2013124314A JP5988438B2 (ja) 2012-08-02 2013-06-13 塗布処理方法及び塗布処理装置

Publications (2)

Publication Number Publication Date
JP2014045171A JP2014045171A (ja) 2014-03-13
JP5988438B2 true JP5988438B2 (ja) 2016-09-07

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JP2013124314A Active JP5988438B2 (ja) 2012-08-02 2013-06-13 塗布処理方法及び塗布処理装置

Country Status (4)

Country Link
US (1) US8791030B2 (ko)
JP (1) JP5988438B2 (ko)
KR (1) KR101716926B1 (ko)
TW (1) TWI540614B (ko)

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JP2016001645A (ja) * 2014-06-11 2016-01-07 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体、塗布処理装置及び基板処理システム
JP6231956B2 (ja) * 2014-08-11 2017-11-15 東京エレクトロン株式会社 基板処理装置
JP6618334B2 (ja) * 2015-06-03 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6603487B2 (ja) 2015-06-22 2019-11-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN108028177B (zh) * 2015-09-15 2022-10-21 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
JP6436068B2 (ja) * 2015-11-19 2018-12-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6704258B2 (ja) * 2016-02-03 2020-06-03 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
US10866516B2 (en) * 2016-08-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-compound-removing solvent and method in lithography
KR102329105B1 (ko) * 2016-08-12 2021-11-18 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
JP6439766B2 (ja) * 2016-09-23 2018-12-19 東京エレクトロン株式会社 塗布、現像方法及び塗布、現像装置
US20200002568A1 (en) * 2017-03-16 2020-01-02 Merck Patent Gmbh Lithographic compositions and methods of use thereof
JP6426223B2 (ja) * 2017-03-31 2018-11-21 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP2020013823A (ja) * 2018-07-13 2020-01-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6688860B2 (ja) * 2018-10-24 2020-04-28 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6597872B2 (ja) * 2018-11-13 2019-10-30 東京エレクトロン株式会社 基板処理方法
JP6627954B2 (ja) * 2018-11-20 2020-01-08 東京エレクトロン株式会社 塗布、現像方法、記憶媒体及び塗布、現像装置
JP2022540086A (ja) 2019-07-08 2022-09-14 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用
CN113823550B (zh) * 2020-06-19 2024-05-03 中国科学院微电子研究所 一种晶圆边缘上的可旋涂硬掩模去除方法
US12020922B2 (en) * 2021-04-16 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for electro-chemical plating
EP4398035A1 (en) * 2021-09-02 2024-07-10 Nissan Chemical Corporation Wafer edge protective-film-forming composition for semiconductor manufacturing
JP2023046448A (ja) * 2021-09-24 2023-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
TW202403444A (zh) * 2022-03-10 2024-01-16 日商日產化學股份有限公司 半導體製造用晶圓端部之保護膜形成用組成物
JP2024024828A (ja) 2022-08-10 2024-02-26 信越化学工業株式会社 ウェハエッジ保護膜形成方法、パターン形成方法、及びウェハエッジ保護膜形成用組成物

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Also Published As

Publication number Publication date
US20140038423A1 (en) 2014-02-06
TW201421536A (zh) 2014-06-01
TWI540614B (zh) 2016-07-01
KR101716926B1 (ko) 2017-03-15
JP2014045171A (ja) 2014-03-13
US8791030B2 (en) 2014-07-29
KR20140018129A (ko) 2014-02-12

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