JP4216238B2 - 塗布処理装置及び塗布処理方法 - Google Patents
塗布処理装置及び塗布処理方法 Download PDFInfo
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- JP4216238B2 JP4216238B2 JP2004277111A JP2004277111A JP4216238B2 JP 4216238 B2 JP4216238 B2 JP 4216238B2 JP 2004277111 A JP2004277111 A JP 2004277111A JP 2004277111 A JP2004277111 A JP 2004277111A JP 4216238 B2 JP4216238 B2 JP 4216238B2
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- Prior art keywords
- coating
- solvent
- wafer
- supply nozzle
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000576 coating method Methods 0.000 title claims description 150
- 239000011248 coating agent Substances 0.000 title claims description 140
- 238000003672 processing method Methods 0.000 title description 4
- 239000002904 solvent Substances 0.000 claims description 135
- 239000007788 liquid Substances 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 26
- 238000004090 dissolution Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 105
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
20 レジスト塗布装置
P1〜P4 レジスト液供給ノズル
S1〜S4 溶剤供給ノズル
180 装置制御部
190 システム制御部
W ウェハ
Claims (5)
- 溶剤を含有した塗布液を基板表面上に塗布するための塗布液供給ノズルと,
基板の周縁部上の塗布液を除去するエッジリンス時に,前記基板の周縁部上の塗布液に溶剤を供給する溶剤供給ノズルと,を備え,
前記溶剤供給ノズルは,供給する溶剤の溶解パラメータが相違するものが複数備えられ,
前記塗布液供給ノズルにより塗布される塗布液中の溶剤の溶解パラメータと,前記溶剤供給ノズルから供給される溶剤の溶解パラメータに基づいて,前記複数の溶剤供給ノズルの中からエッジリンス時に使用する溶剤供給ノズルを設定するノズル設定装置をさらに備えたことを特徴とする,塗布処理装置。 - 前記ノズル設定装置は,前記塗布液供給ノズルから塗布される塗布液中の溶剤の溶解パラメータと前記溶剤供給ノズルから供給される溶剤の溶解パラメータが予め定められた設定値以上離れるように,前記エッジリンス時に使用する溶剤供給ノズルを設定することを特徴とする,請求項1に記載の塗布処理装置。
- 前記複数の溶剤供給ノズルの中から前記ノズル設定装置により設定された溶剤供給ノズルを選択的に保持し,当該保持した溶剤供給ノズルを基板の周縁部上まで移動するノズル移動機構を備えたことを特徴とする,請求項1又は2のいずれかに記載の塗布処理装置。
- 塗布液の種類が異なる複数の塗布液供給ノズルを備えたことを特徴とする,請求項1〜3のいずれかに記載の塗布処理装置。
- 請求項1に記載の塗布処理装置を用いた塗布処理方法であって,
前記塗布液供給ノズルから,溶剤を含有した塗布液を基板表面上に塗布する塗布工程と,
その後,前記溶剤供給ノズルから,前記塗布工程時に塗布された塗布液中の溶剤に対して溶解パラメータが予め定められた設定値以上離れた溶剤を,前記基板の周縁部上の塗布液に供給して当該周縁部上の塗布液を除去する工程と,を有することを特徴とする,塗布処理方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004277111A JP4216238B2 (ja) | 2004-09-24 | 2004-09-24 | 塗布処理装置及び塗布処理方法 |
US11/232,241 US7479190B2 (en) | 2004-09-24 | 2005-09-22 | Coating treatment apparatus and coating treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004277111A JP4216238B2 (ja) | 2004-09-24 | 2004-09-24 | 塗布処理装置及び塗布処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006093409A JP2006093409A (ja) | 2006-04-06 |
JP4216238B2 true JP4216238B2 (ja) | 2009-01-28 |
Family
ID=36099496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004277111A Expired - Fee Related JP4216238B2 (ja) | 2004-09-24 | 2004-09-24 | 塗布処理装置及び塗布処理方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7479190B2 (ja) |
JP (1) | JP4216238B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288488A (ja) * | 2007-05-21 | 2008-11-27 | Sokudo:Kk | 基板処理装置および基板処理方法 |
KR100941075B1 (ko) * | 2007-12-27 | 2010-02-09 | 세메스 주식회사 | 처리액 공급 유닛과, 이를 이용한 기판 처리 장치 및 방법 |
US20110027478A1 (en) * | 2008-03-31 | 2011-02-03 | Showa Denko K.K. | Double-side coating apparatus, method for coating double sides with coating solution, edge rinsing apparatus, and edge rinsing method |
WO2011017638A2 (en) * | 2009-08-07 | 2011-02-10 | Fas Holdings Group, Llc. | Segmented or selected-area coating |
KR20170113709A (ko) | 2009-11-09 | 2017-10-12 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 노광 장치의 메인터넌스 방법, 노광 장치의 조정 방법, 및 디바이스 제조 방법 |
WO2012068291A1 (en) * | 2010-11-16 | 2012-05-24 | Alpert Martin A | Washing apparatus and method with spiral air flow for drying |
JP5988438B2 (ja) * | 2012-08-02 | 2016-09-07 | 東京エレクトロン株式会社 | 塗布処理方法及び塗布処理装置 |
JP5783971B2 (ja) * | 2012-08-10 | 2015-09-24 | 株式会社東芝 | 塗布装置および塗布方法 |
JP6352824B2 (ja) * | 2015-01-23 | 2018-07-04 | 東芝メモリ株式会社 | 基板処理装置、制御プログラムおよび制御方法 |
JP6618334B2 (ja) | 2015-06-03 | 2019-12-11 | 株式会社Screenホールディングス | 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法 |
WO2016194285A1 (ja) * | 2015-06-03 | 2016-12-08 | 株式会社Screenホールディングス | 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法 |
JP2019096669A (ja) * | 2017-11-20 | 2019-06-20 | 東京エレクトロン株式会社 | 基板処理装置及び塗布モジュールのパラメータの調整方法並びに記憶媒体 |
JP7490503B2 (ja) * | 2020-08-28 | 2024-05-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
KR102583342B1 (ko) * | 2020-10-22 | 2023-09-26 | 세메스 주식회사 | 기판 처리 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100284556B1 (ko) * | 1993-03-25 | 2001-04-02 | 다카시마 히로시 | 도포막 형성방법 및 그를 위한 장치 |
JPH08107053A (ja) | 1994-10-03 | 1996-04-23 | Hitachi Ltd | 成膜除去方法 |
US5997653A (en) * | 1996-10-07 | 1999-12-07 | Tokyo Electron Limited | Method for washing and drying substrates |
JP3300624B2 (ja) * | 1997-01-24 | 2002-07-08 | 東京エレクトロン株式会社 | 基板端面の洗浄方法 |
TW442336B (en) * | 1997-08-19 | 2001-06-23 | Tokyo Electron Ltd | Film forming method |
TW385489B (en) * | 1997-08-26 | 2000-03-21 | Tokyo Electron Ltd | Method for processing substrate and device of processing device |
JP4087000B2 (ja) * | 1999-03-08 | 2008-05-14 | 日鉱金属株式会社 | レードル及びレードルのライニング方法 |
US6565928B2 (en) * | 1999-03-08 | 2003-05-20 | Tokyo Electron Limited | Film forming method and film forming apparatus |
JP2004045491A (ja) * | 2002-07-09 | 2004-02-12 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂の膜形成方法 |
JP4464763B2 (ja) * | 2004-08-20 | 2010-05-19 | 東京エレクトロン株式会社 | 現像装置及び現像方法 |
-
2004
- 2004-09-24 JP JP2004277111A patent/JP4216238B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-22 US US11/232,241 patent/US7479190B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006093409A (ja) | 2006-04-06 |
US7479190B2 (en) | 2009-01-20 |
US20060068110A1 (en) | 2006-03-30 |
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