JP5964091B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP5964091B2
JP5964091B2 JP2012054170A JP2012054170A JP5964091B2 JP 5964091 B2 JP5964091 B2 JP 5964091B2 JP 2012054170 A JP2012054170 A JP 2012054170A JP 2012054170 A JP2012054170 A JP 2012054170A JP 5964091 B2 JP5964091 B2 JP 5964091B2
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type
region
breakdown voltage
main surface
high breakdown
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JP2013187521A5 (enExample
JP2013187521A (ja
Inventor
佐山　弘和
弘和 佐山
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2012054170A priority Critical patent/JP5964091B2/ja
Priority to TW102107482A priority patent/TWI590454B/zh
Priority to US13/785,674 priority patent/US9112013B2/en
Priority to CN201310074966.5A priority patent/CN103311246B/zh
Publication of JP2013187521A publication Critical patent/JP2013187521A/ja
Publication of JP2013187521A5 publication Critical patent/JP2013187521A5/ja
Priority to US14/797,967 priority patent/US20150325486A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2012054170A 2012-03-12 2012-03-12 半導体装置およびその製造方法 Active JP5964091B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012054170A JP5964091B2 (ja) 2012-03-12 2012-03-12 半導体装置およびその製造方法
TW102107482A TWI590454B (zh) 2012-03-12 2013-03-04 半導體裝置及其製造方法
US13/785,674 US9112013B2 (en) 2012-03-12 2013-03-05 Semiconductor device and method for producing the same
CN201310074966.5A CN103311246B (zh) 2012-03-12 2013-03-11 半导体器件及其制造方法
US14/797,967 US20150325486A1 (en) 2012-03-12 2015-07-13 Semiconductor device and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012054170A JP5964091B2 (ja) 2012-03-12 2012-03-12 半導体装置およびその製造方法

Publications (3)

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JP2013187521A JP2013187521A (ja) 2013-09-19
JP2013187521A5 JP2013187521A5 (enExample) 2014-09-25
JP5964091B2 true JP5964091B2 (ja) 2016-08-03

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JP2012054170A Active JP5964091B2 (ja) 2012-03-12 2012-03-12 半導体装置およびその製造方法

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US (2) US9112013B2 (enExample)
JP (1) JP5964091B2 (enExample)
CN (1) CN103311246B (enExample)
TW (1) TWI590454B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6189771B2 (ja) * 2014-03-03 2017-08-30 ルネサスエレクトロニクス株式会社 半導体装置
CN106611790B (zh) * 2015-10-26 2020-07-17 上海新昇半导体科技有限公司 垂直晶体管及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
EP0741416B1 (en) * 1995-05-02 2001-09-26 STMicroelectronics S.r.l. Thin epitaxy RESURF ic containing HV p-ch and n-ch devices with source or drain not tied to grounds potential
JP2002353441A (ja) * 2001-05-22 2002-12-06 Denso Corp パワーｍｏｓトランジスタ
US6475870B1 (en) * 2001-07-23 2002-11-05 Taiwan Semiconductor Manufacturing Company P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture
US6858500B2 (en) * 2002-01-16 2005-02-22 Fuji Electric Co., Ltd. Semiconductor device and its manufacturing method
JP4677166B2 (ja) 2002-06-27 2011-04-27 三洋電機株式会社 半導体装置及びその製造方法
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
JP2006128640A (ja) * 2004-09-30 2006-05-18 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20080017897A1 (en) * 2006-01-30 2008-01-24 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing same
JP2008004649A (ja) 2006-06-21 2008-01-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4568325B2 (ja) 2007-12-20 2010-10-27 シャープ株式会社 半導体装置及びその製造方法
TWI397180B (zh) * 2008-12-17 2013-05-21 Vanguard Int Semiconduct Corp 在積體電路中具靜電放電防護能力的水平擴散金氧半導體電晶體（ｌｄｍｏｓ）元件
JP2010245160A (ja) * 2009-04-02 2010-10-28 Renesas Electronics Corp 半導体装置の製造方法
US8193585B2 (en) * 2009-10-29 2012-06-05 Freescale Semiconductor, Inc. Semiconductor device with increased snapback voltage
JP5624816B2 (ja) * 2010-07-06 2014-11-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
US8749016B2 (en) * 2010-10-06 2014-06-10 Macronix International Co., Ltd. High voltage MOS device and method for making the same
JP5665567B2 (ja) * 2011-01-26 2015-02-04 株式会社東芝 半導体素子
US8802529B2 (en) * 2011-07-19 2014-08-12 Alpha And Omega Semiconductor Incorporated Semiconductor device with field threshold MOSFET for high voltage termination

Also Published As

Publication number Publication date
US20130234258A1 (en) 2013-09-12
US20150325486A1 (en) 2015-11-12
TW201401510A (zh) 2014-01-01
US9112013B2 (en) 2015-08-18
CN103311246A (zh) 2013-09-18
JP2013187521A (ja) 2013-09-19
CN103311246B (zh) 2018-08-10
TWI590454B (zh) 2017-07-01

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