JP5961499B2 - 蓄電装置用負極 - Google Patents
蓄電装置用負極 Download PDFInfo
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- JP5961499B2 JP5961499B2 JP2012205202A JP2012205202A JP5961499B2 JP 5961499 B2 JP5961499 B2 JP 5961499B2 JP 2012205202 A JP2012205202 A JP 2012205202A JP 2012205202 A JP2012205202 A JP 2012205202A JP 5961499 B2 JP5961499 B2 JP 5961499B2
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- 239000000126 substance Substances 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
- H01M4/624—Electric conductive fillers
- H01M4/625—Carbon or graphite
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Hybrid Cells (AREA)
Description
本実施の形態では、充放電による劣化が少なく、高充放電サイクル特性を有する蓄電装置の負極の構造及びその作製方法について、図1乃至図4等を用いて説明する。図1乃至図4において、(A)は斜視図であり、(B)はA−Bでの断面図である。
本実施の形態では、充放電による劣化が少なく、高充放電サイクル特性を有する蓄電装置の負極の構造及びその作製方法について、図8を用いて説明する。本実施の形態で説明する負極は、実施の形態1と比較して、グラフェンを設ける構成で異なる。
本実施の形態では、充放電による劣化が少なく、高充放電サイクル特性を有する蓄電装置の負極の構造及びその作製方法について、図7を用いて説明する。本実施の形態で説明する負極は、実施の形態1と比較して、集電体を有する構成で異なり、さらにグラフェンを設けた構成も説明する。
本実施の形態では、蓄電装置の正極構造及び作製方法について説明する。
本実施の形態では、蓄電装置の構造及び作製方法について説明する。
本発明の一態様に係る蓄電装置は、電力により駆動する様々な電気機器の電源として用いることができる。
102 共通部
103 有機材料
104 梁
120 グラフェン
130 集電体
307 正極集電体
309 正極活物質層
311 正極
321 正極活物質
331 スペーサ
323 グラフェン
400 リチウムイオン二次電池
401 負極集電体
403 負極活物質層
405 負極
407 正極集電体
409 正極活物質層
411 正極
413 セパレータ
415 電解質
417 外部端子
419 外部端子
421 ガスケット
5000 表示装置
5001 筐体
5002 表示部
5003 スピーカー部
5004 蓄電装置
5100 照明装置
5101 筐体
5102 光源
5103 蓄電装置
5104 天井
5105 側壁
5106 床
5107 窓
5200 室内機
5201 筐体
5202 送風口
5203 蓄電装置
5204 室外機
5300 電気冷凍冷蔵庫
5301 筐体
5302 冷蔵室用扉
5303 冷凍室用扉
5304 蓄電装置
9630 筐体
9631 表示部
9034 切り替えスイッチ
9035 電源スイッチ
9036 切り替えスイッチ
9033 留め具
9038 操作スイッチ
9632a 領域
9632b 領域
9638 操作キー
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
Claims (2)
- 複数の突起を有する構造体と、
前記複数の突起が設けられた集電体と、
前記複数の突起のうち第1の突起と第2の突起との上方の梁とを有し、
前記構造体は、負極活物質として機能し、
前記梁は、絶縁物又は導電物を有し、
前記梁は、前記集電体の曲がる方向に対して垂直方向に沿うように設けられたことを特徴とする蓄電装置用負極。 - 複数の突起を構成するシリコンと、
前記複数の突起が設けられた集電体と、
前記複数の突起のうち第1の突起と第2の突起との上方の梁とを有し、
前記シリコンは、負極活物質として機能し、
前記梁は、酸化シリコン、窒化シリコン、酸化窒化シリコン、窒化酸化シリコン、酸化アルミニウム、窒化アルミニウム、チタン、アルミニウム、銅、又はシリコンを有し、
前記梁は、前記集電体の曲がる方向に対して垂直方向に沿うように設けられたことを特徴とする蓄電装置用負極。
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JP2012205202A JP5961499B2 (ja) | 2011-09-21 | 2012-09-19 | 蓄電装置用負極 |
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JP2013080699A JP2013080699A (ja) | 2013-05-02 |
JP2013080699A5 JP2013080699A5 (ja) | 2015-08-06 |
JP5961499B2 true JP5961499B2 (ja) | 2016-08-02 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5961496B2 (ja) | 2011-09-16 | 2016-08-02 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
JP6069821B2 (ja) * | 2011-09-28 | 2017-02-01 | ソニー株式会社 | リチウムイオン二次電池 |
JP6218349B2 (ja) | 2011-09-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
JP6059941B2 (ja) | 2011-12-07 | 2017-01-11 | 株式会社半導体エネルギー研究所 | リチウム二次電池用負極及びリチウム二次電池 |
JP6050106B2 (ja) | 2011-12-21 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 非水二次電池用シリコン負極の製造方法 |
KR102255310B1 (ko) * | 2013-11-18 | 2021-05-24 | 삼성전자주식회사 | 접이식 구조를 갖는 금속-공기 전지 및 그 제조 방법 |
US9553465B2 (en) * | 2014-04-21 | 2017-01-24 | Palo Alto Research Center Incorporated | Battery management based on internal optical sensing |
JP6403151B2 (ja) * | 2014-06-24 | 2018-10-10 | 日立造船株式会社 | 二次電池用電極 |
US9677916B2 (en) | 2014-07-15 | 2017-06-13 | Palo Alto Research Center Incorporated | Energy system monitoring |
US10403922B2 (en) | 2014-07-23 | 2019-09-03 | Palo Alto Research Center Incorporated | Battery with embedded fiber optic cable |
US10446886B2 (en) | 2014-07-23 | 2019-10-15 | Palo Alto Research Center Incorporated | Embedded fiber optic cables for battery management |
KR102471728B1 (ko) | 2014-10-24 | 2022-11-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지, 및 이차 전지의 제작 방법 |
WO2016160703A1 (en) | 2015-03-27 | 2016-10-06 | Harrup Mason K | All-inorganic solvents for electrolytes |
JP6890956B2 (ja) | 2015-12-10 | 2021-06-18 | 株式会社半導体エネルギー研究所 | 蓄電装置及び電子機器 |
US10707531B1 (en) | 2016-09-27 | 2020-07-07 | New Dominion Enterprises Inc. | All-inorganic solvents for electrolytes |
KR20180045317A (ko) | 2016-10-25 | 2018-05-04 | 삼성전자주식회사 | 3차원 전극구조체 및 이를 포함하는 이차전지 |
DE112017006110T5 (de) | 2016-12-02 | 2019-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Energiespeichervorrichtung und elektronisches Gerät |
KR102717441B1 (ko) | 2017-01-16 | 2024-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
US10317256B2 (en) | 2017-04-14 | 2019-06-11 | Palo Alto Research Center Incorporated | Monitoring transportation systems |
KR102302822B1 (ko) * | 2017-04-18 | 2021-09-16 | 엘지이노텍 주식회사 | 전극구조 및 이를 포함하는 전기화학 소자 |
US10622636B2 (en) * | 2017-09-29 | 2020-04-14 | International Business Machines Corporation | High-capacity rechargeable battery stacks containing a spalled cathode material |
JP2019212605A (ja) * | 2018-05-31 | 2019-12-12 | パナソニックIpマネジメント株式会社 | リチウム二次電池 |
Family Cites Families (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4628015A (en) | 1984-09-20 | 1986-12-09 | Kanebo, Ltd. | Insoluble and infusible substrate with a polyacene-type skeletal structure, and its applications for electrical conductor and organic cell |
JPH0660870A (ja) | 1992-08-05 | 1994-03-04 | Toshiba Battery Co Ltd | 乾電池の製造法 |
DE69529316T2 (de) * | 1994-07-19 | 2003-09-04 | Canon K.K., Tokio/Tokyo | Wiederaufladbare Batterien mit einer speziellen Anode und Verfahren zu ihrer Herstellung |
JP4146978B2 (ja) * | 1999-01-06 | 2008-09-10 | キヤノン株式会社 | 細孔を有する構造体の製造方法、該製造方法により製造された構造体 |
JP4567822B2 (ja) | 1999-03-24 | 2010-10-20 | 株式会社東芝 | 角型非水電解液二次電池 |
JP3733070B2 (ja) | 1999-10-22 | 2006-01-11 | 三洋電機株式会社 | リチウム二次電池用電極及びリチウム二次電池 |
US7241533B1 (en) | 1999-10-22 | 2007-07-10 | Sanyo Electric Co., Ltd. | Electrode for rechargeable lithium battery and rechargeable lithium battery |
AU7951400A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Method for producing electrode for lithium secondary cell |
WO2001029913A1 (en) | 1999-10-22 | 2001-04-26 | Sanyo Electric Co., Ltd. | Method for producing material for electrode for lithium cell |
DE60045344D1 (de) | 1999-10-22 | 2011-01-20 | Sanyo Electric Co | Elektrode für lithiumzelle und lithiumsekundärzelle |
AU7951000A (en) | 1999-10-22 | 2001-05-08 | Sanyo Electric Co., Ltd. | Electrode for lithium cell and lithium secondary cell |
JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
JP3913439B2 (ja) | 2000-04-03 | 2007-05-09 | 三洋電機株式会社 | リチウム二次電池 |
JP2002063894A (ja) | 2000-08-22 | 2002-02-28 | Sharp Corp | 炭素材料膜の作製方法及び該炭素材料膜を用いた非水電解質二次電池 |
JP2002164556A (ja) | 2000-11-27 | 2002-06-07 | Kyocera Corp | 裏面電極型太陽電池素子 |
US20020122985A1 (en) | 2001-01-17 | 2002-09-05 | Takaya Sato | Battery active material powder mixture, electrode composition for batteries, secondary cell electrode, secondary cell, carbonaceous material powder mixture for electrical double-layer capacitors, polarizable electrode composition, polarizable electrode, and electrical double-layer capacitor |
US6887623B2 (en) | 2001-04-09 | 2005-05-03 | Sanyo Electric Co., Ltd. | Electrode for rechargeable lithium battery and rechargeable lithium battery |
JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
JP2003258285A (ja) | 2002-02-27 | 2003-09-12 | Sharp Corp | 表面凹凸構造の作製方法及び太陽電池 |
JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
GB2395059B (en) | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
JP2005025978A (ja) | 2003-06-30 | 2005-01-27 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びリチウム二次電池 |
JP2005093239A (ja) | 2003-09-17 | 2005-04-07 | Sony Corp | 電池 |
US20050064291A1 (en) | 2003-09-18 | 2005-03-24 | Matsushita Electric Industrial Co., Ltd. | Battery and non-aqueous electrolyte secondary battery using the same |
KR100570677B1 (ko) | 2003-09-26 | 2006-04-12 | 삼성에스디아이 주식회사 | 리튬 이차 전지 |
JP2005108521A (ja) | 2003-09-29 | 2005-04-21 | Hitachi Maxell Ltd | 薄膜電極とその製造方法およびその薄膜電極を用いたリチウム二次電池 |
JP2006080450A (ja) | 2004-09-13 | 2006-03-23 | Sharp Corp | 太陽電池の製造方法 |
CN100553025C (zh) | 2005-01-26 | 2009-10-21 | 松下电器产业株式会社 | 锂二次电池用负极和使用其的锂二次电池及它们的制造方法 |
US7923148B2 (en) | 2005-03-31 | 2011-04-12 | Sanyo Electric Co., Ltd. | Nonaqueous electrolyte secondary battery including a negative electrode containing silicon and an additive which retards oxidation of silicon during battery operation |
US8003257B2 (en) | 2005-07-04 | 2011-08-23 | Showa Denko K.K. | Method for producing anode for lithium secondary battery and anode composition, and lithium secondary battery |
JP5181413B2 (ja) | 2005-09-13 | 2013-04-10 | 日立電線株式会社 | 電気化学装置用電極、固体電解質/電極接合体及びその製造方法 |
FR2891280B1 (fr) * | 2005-09-29 | 2008-01-18 | St Microelectronics Sa | Formation de silicium poreux dans une plaquette de silicium |
WO2008048295A2 (en) | 2005-11-18 | 2008-04-24 | Northwestern University | Stable dispersions of polymer-coated graphitic nanoplatelets |
JP5043338B2 (ja) | 2006-01-19 | 2012-10-10 | パナソニック株式会社 | リチウム二次電池 |
JP2007273184A (ja) | 2006-03-30 | 2007-10-18 | Sony Corp | 電池 |
JP2007299580A (ja) | 2006-04-28 | 2007-11-15 | Matsushita Electric Ind Co Ltd | 非水電解質角型二次電池 |
JP2007308774A (ja) | 2006-05-19 | 2007-11-29 | Utec:Kk | 薄膜形成装置、及び薄膜形成方法 |
WO2008044461A1 (fr) | 2006-10-12 | 2008-04-17 | Panasonic Corporation | Accumulateur secondaire à électrolyte non aqueux et son procédé de production d'électrode négative |
FR2910721B1 (fr) | 2006-12-21 | 2009-03-27 | Commissariat Energie Atomique | Ensemble collecteur de courant-electrode avec des cavites d'expansion pour accumulateur au lithium sous forme de films minces. |
JP5153189B2 (ja) | 2007-03-30 | 2013-02-27 | 三井造船株式会社 | リチウムイオン二次電池正極材料の製造方法 |
JP2008294314A (ja) | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | キャパシタ |
JP4594965B2 (ja) * | 2007-08-09 | 2010-12-08 | パナソニック株式会社 | リチウムイオン二次電池用負極集電体、リチウムイオン二次電池用負極およびリチウムイオン二次電池 |
JP4865673B2 (ja) | 2007-10-23 | 2012-02-01 | パナソニック株式会社 | リチウム二次電池 |
KR100923304B1 (ko) | 2007-10-29 | 2009-10-23 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
US7745047B2 (en) | 2007-11-05 | 2010-06-29 | Nanotek Instruments, Inc. | Nano graphene platelet-base composite anode compositions for lithium ion batteries |
JP4589419B2 (ja) | 2008-04-07 | 2010-12-01 | トヨタ自動車株式会社 | リチウムイオン二次電池用負極体の製造方法 |
US8450014B2 (en) | 2008-07-28 | 2013-05-28 | Battelle Memorial Institute | Lithium ion batteries with titania/graphene anodes |
US9190667B2 (en) | 2008-07-28 | 2015-11-17 | Nanotek Instruments, Inc. | Graphene nanocomposites for electrochemical cell electrodes |
US8257867B2 (en) | 2008-07-28 | 2012-09-04 | Battelle Memorial Institute | Nanocomposite of graphene and metal oxide materials |
JP5196555B2 (ja) | 2008-08-06 | 2013-05-15 | 独立行政法人産業技術総合研究所 | 電極材料前駆体の製造方法及び得られた電極材料前駆体を用いる電極材料の製造方法 |
US8821763B2 (en) | 2008-09-30 | 2014-09-02 | Tdk Corporation | Active material and method of manufacturing active material |
JP2010129332A (ja) | 2008-11-27 | 2010-06-10 | Toyota Motor Corp | 非水電解質二次電池 |
US9093693B2 (en) | 2009-01-13 | 2015-07-28 | Samsung Electronics Co., Ltd. | Process for producing nano graphene reinforced composite particles for lithium battery electrodes |
US8486562B2 (en) | 2009-02-25 | 2013-07-16 | Applied Materials, Inc. | Thin film electrochemical energy storage device with three-dimensional anodic structure |
US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
JP2010239122A (ja) | 2009-03-09 | 2010-10-21 | Semiconductor Energy Lab Co Ltd | 蓄電デバイス |
EP2228855B1 (en) | 2009-03-12 | 2014-02-26 | Belenos Clean Power Holding AG | Open porous electrically conductive nanocomposite material |
EP2237346B1 (en) | 2009-04-01 | 2017-08-09 | The Swatch Group Research and Development Ltd. | Electrically conductive nanocomposite material comprising sacrificial nanoparticles and open porous nanocomposites produced thereof |
JP5337546B2 (ja) | 2009-03-18 | 2013-11-06 | 株式会社半導体エネルギー研究所 | 電気化学キャパシタの作製方法 |
JP2010250968A (ja) | 2009-04-10 | 2010-11-04 | Panasonic Corp | リチウムイオン二次電池 |
JP5313761B2 (ja) | 2009-05-08 | 2013-10-09 | パナソニック株式会社 | リチウムイオン電池 |
US20100291438A1 (en) | 2009-05-15 | 2010-11-18 | PDC Energy, LLC | Electrode material, lithium-ion battery and method thereof |
EP2287946A1 (en) | 2009-07-22 | 2011-02-23 | Belenos Clean Power Holding AG | New electrode materials, in particular for rechargeable lithium ion batteries |
JP2011048992A (ja) | 2009-08-26 | 2011-03-10 | Sekisui Chem Co Ltd | 炭素材料、電極材料及びリチウムイオン二次電池負極材料 |
KR101736462B1 (ko) | 2009-09-21 | 2017-05-16 | 한화테크윈 주식회사 | 그래핀의 제조 방법 |
KR101740692B1 (ko) * | 2009-09-30 | 2017-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치용 전극의 제작 방법 및 축전 장치의 제작 방법 |
US9431649B2 (en) | 2009-11-23 | 2016-08-30 | Uchicago Argonne, Llc | Coated electroactive materials |
US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
US20110183203A1 (en) | 2010-01-27 | 2011-07-28 | Molecular Nanosystems, Inc. | Polymer supported electrodes |
WO2011116369A2 (en) | 2010-03-19 | 2011-09-22 | Board Of Regents, The University Of Texas System | Electrophoretic deposition and reduction of graphene oxide to make graphene film coatings and electrode structures |
WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
US20110294005A1 (en) | 2010-05-28 | 2011-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and electric device |
KR101830194B1 (ko) | 2010-06-30 | 2018-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치의 제작 방법 |
CN101924211A (zh) | 2010-08-19 | 2010-12-22 | 北京科技大学 | 一种石墨烯/硅锂离子电池负极材料及制备方法 |
CN106207082A (zh) | 2010-08-19 | 2016-12-07 | 株式会社半导体能源研究所 | 电气设备 |
US8691441B2 (en) | 2010-09-07 | 2014-04-08 | Nanotek Instruments, Inc. | Graphene-enhanced cathode materials for lithium batteries |
US20120088151A1 (en) | 2010-10-08 | 2012-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Positive-electrode active material and power storage device |
DE112011103395T5 (de) | 2010-10-08 | 2013-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zum Herstellen eines Positivelektrodenaktivmaterials für eine Energiespeichervorrichtung und Energiespeichervorrichtung |
CN102064322B (zh) | 2010-11-25 | 2013-02-27 | 深圳清研紫光科技有限公司 | 锂离子电池负极用的硅/石墨烯层状复合材料的制备方法 |
JP5961496B2 (ja) | 2011-09-16 | 2016-08-02 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
JP6218349B2 (ja) | 2011-09-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
KR102028550B1 (ko) | 2011-09-30 | 2019-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
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