JP5956840B2 - 固体撮像装置及びカメラ - Google Patents

固体撮像装置及びカメラ Download PDF

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Publication number
JP5956840B2
JP5956840B2 JP2012139162A JP2012139162A JP5956840B2 JP 5956840 B2 JP5956840 B2 JP 5956840B2 JP 2012139162 A JP2012139162 A JP 2012139162A JP 2012139162 A JP2012139162 A JP 2012139162A JP 5956840 B2 JP5956840 B2 JP 5956840B2
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region
solid
imaging device
state imaging
charge storage
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Japanese (ja)
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JP2014003243A5 (enExample
JP2014003243A (ja
Inventor
聡子 飯田
聡子 飯田
豊口　銀二郎
銀二郎 豊口
伸 菊池
伸 菊池
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Canon Inc
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Canon Inc
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Priority to JP2012139162A priority Critical patent/JP5956840B2/ja
Priority to US13/917,892 priority patent/US8921900B2/en
Publication of JP2014003243A publication Critical patent/JP2014003243A/ja
Publication of JP2014003243A5 publication Critical patent/JP2014003243A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012139162A 2012-06-20 2012-06-20 固体撮像装置及びカメラ Active JP5956840B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012139162A JP5956840B2 (ja) 2012-06-20 2012-06-20 固体撮像装置及びカメラ
US13/917,892 US8921900B2 (en) 2012-06-20 2013-06-14 Solid-state imaging device and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012139162A JP5956840B2 (ja) 2012-06-20 2012-06-20 固体撮像装置及びカメラ

Publications (3)

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JP2014003243A JP2014003243A (ja) 2014-01-09
JP2014003243A5 JP2014003243A5 (enExample) 2015-05-07
JP5956840B2 true JP5956840B2 (ja) 2016-07-27

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JP2012139162A Active JP5956840B2 (ja) 2012-06-20 2012-06-20 固体撮像装置及びカメラ

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US (1) US8921900B2 (enExample)
JP (1) JP5956840B2 (enExample)

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JP6341796B2 (ja) 2014-08-06 2018-06-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP2017085065A (ja) * 2015-10-30 2017-05-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6840555B2 (ja) 2017-01-30 2021-03-10 キヤノン株式会社 固体撮像装置及び撮像システム
JP6949563B2 (ja) 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
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JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体
JP2020021775A (ja) 2018-07-30 2020-02-06 キヤノン株式会社 固体撮像装置及び撮像システム
US11100586B1 (en) 2019-07-09 2021-08-24 Wells Fargo Bank, N.A. Systems and methods for callable options values determination using deep machine learning
JP7602346B2 (ja) * 2020-10-14 2024-12-18 浜松ホトニクス株式会社 光センサ

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US8921900B2 (en) 2014-12-30
JP2014003243A (ja) 2014-01-09

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