JP5932599B2 - プラズマエッチング方法 - Google Patents
プラズマエッチング方法 Download PDFInfo
- Publication number
- JP5932599B2 JP5932599B2 JP2012229411A JP2012229411A JP5932599B2 JP 5932599 B2 JP5932599 B2 JP 5932599B2 JP 2012229411 A JP2012229411 A JP 2012229411A JP 2012229411 A JP2012229411 A JP 2012229411A JP 5932599 B2 JP5932599 B2 JP 5932599B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- silicon nitride
- etching
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
- H10P50/263—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012229411A JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
| TW101139495A TW201335991A (zh) | 2011-10-31 | 2012-10-25 | 電漿蝕刻方法 |
| TW105122740A TWI600083B (zh) | 2011-10-31 | 2012-10-25 | Plasma etching method |
| KR1020120121063A KR101405175B1 (ko) | 2011-10-31 | 2012-10-30 | 플라즈마 에칭 방법 |
| US13/664,940 US8741166B2 (en) | 2011-10-31 | 2012-10-31 | Plasma etching method |
| CN201310015232.XA CN103779203B (zh) | 2012-10-17 | 2013-01-16 | 等离子蚀刻方法 |
| US14/248,844 US8889024B2 (en) | 2011-10-31 | 2014-04-09 | Plasma etching method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011238166 | 2011-10-31 | ||
| JP2011238166 | 2011-10-31 | ||
| JP2012229411A JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013118359A JP2013118359A (ja) | 2013-06-13 |
| JP2013118359A5 JP2013118359A5 (https=) | 2015-03-19 |
| JP5932599B2 true JP5932599B2 (ja) | 2016-06-08 |
Family
ID=48610539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012229411A Active JP5932599B2 (ja) | 2011-10-31 | 2012-10-17 | プラズマエッチング方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8741166B2 (https=) |
| JP (1) | JP5932599B2 (https=) |
| KR (1) | KR101405175B1 (https=) |
| TW (2) | TWI600083B (https=) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6289996B2 (ja) * | 2014-05-14 | 2018-03-07 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US9911620B2 (en) * | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
| US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
| US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
| US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
| JP6557588B2 (ja) * | 2015-12-04 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
| US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
| US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
| US9673058B1 (en) | 2016-03-14 | 2017-06-06 | Lam Research Corporation | Method for etching features in dielectric layers |
| US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| JP6796519B2 (ja) * | 2017-03-10 | 2020-12-09 | 東京エレクトロン株式会社 | エッチング方法 |
| FR3065576B1 (fr) * | 2017-04-25 | 2020-01-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de gravure d'une couche a base de sin |
| US10847374B2 (en) | 2017-10-31 | 2020-11-24 | Lam Research Corporation | Method for etching features in a stack |
| CN118380372A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| US10361092B1 (en) | 2018-02-23 | 2019-07-23 | Lam Research Corporation | Etching features using metal passivation |
| US10283370B1 (en) * | 2018-03-01 | 2019-05-07 | Applied Materials, Inc. | Silicon addition for silicon nitride etching selectivity |
| JP6811202B2 (ja) * | 2018-04-17 | 2021-01-13 | 東京エレクトロン株式会社 | エッチングする方法及びプラズマ処理装置 |
| US10515821B1 (en) | 2018-06-26 | 2019-12-24 | Lam Research Corporation | Method of achieving high selectivity for high aspect ratio dielectric etch |
| CN118398464A (zh) | 2018-08-13 | 2024-07-26 | 朗姆研究公司 | 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件 |
| US10741407B2 (en) | 2018-10-19 | 2020-08-11 | Lam Research Corporation | Reduction of sidewall notching for high aspect ratio 3D NAND etch |
| JP7075537B2 (ja) * | 2020-02-10 | 2022-05-25 | 株式会社日立ハイテク | プラズマ処理方法 |
| CN115244663A (zh) * | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 高深宽比3d nand蚀刻的侧壁凹陷的减少 |
| KR102905595B1 (ko) | 2020-03-23 | 2025-12-29 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들에서의 중간-링 부식 보상 |
| CN113471049B (zh) | 2021-06-30 | 2022-07-26 | 北京屹唐半导体科技股份有限公司 | 用于处理工件的方法及等离子体刻蚀机、半导体器件 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4793897A (en) * | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
| EP0424299A3 (en) * | 1989-10-20 | 1991-08-28 | International Business Machines Corporation | Selective silicon nitride plasma etching |
| JP3210359B2 (ja) * | 1991-05-29 | 2001-09-17 | 株式会社東芝 | ドライエッチング方法 |
| JP3172340B2 (ja) * | 1993-08-12 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP3681533B2 (ja) | 1997-02-25 | 2005-08-10 | 富士通株式会社 | 窒化シリコン層のエッチング方法及び半導体装置の製造方法 |
| US5786276A (en) * | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
| JP3439455B2 (ja) * | 2000-12-18 | 2003-08-25 | Ｎｅｃエレクトロニクス株式会社 | 異方性ドライエッチング方法 |
| AU2002303842A1 (en) * | 2001-05-22 | 2002-12-03 | Reflectivity, Inc. | A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| US7098141B1 (en) * | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
| GB0401622D0 (en) * | 2004-01-26 | 2004-02-25 | Oxford Instr Plasma Technology | Plasma etching process |
| KR100780944B1 (ko) * | 2005-10-12 | 2007-12-03 | 삼성전자주식회사 | 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
| US7393788B2 (en) * | 2006-02-10 | 2008-07-01 | Cook Julie A | Method and system for selectively etching a dielectric material relative to silicon |
| JP5209859B2 (ja) | 2006-09-19 | 2013-06-12 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| US20110223770A1 (en) * | 2010-03-15 | 2011-09-15 | Lam Research Corporation | Nitride plasma etch with highly tunable selectivity to oxide |
| KR102023784B1 (ko) * | 2011-03-04 | 2019-09-20 | 도쿄엘렉트론가부시키가이샤 | 질화규소막 에칭 방법 |
-
2012
- 2012-10-17 JP JP2012229411A patent/JP5932599B2/ja active Active
- 2012-10-25 TW TW105122740A patent/TWI600083B/zh active
- 2012-10-25 TW TW101139495A patent/TW201335991A/zh unknown
- 2012-10-30 KR KR1020120121063A patent/KR101405175B1/ko active Active
- 2012-10-31 US US13/664,940 patent/US8741166B2/en active Active
-
2014
- 2014-04-09 US US14/248,844 patent/US8889024B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101405175B1 (ko) | 2014-06-10 |
| TW201335991A (zh) | 2013-09-01 |
| US20130157470A1 (en) | 2013-06-20 |
| TW201639029A (zh) | 2016-11-01 |
| US8741166B2 (en) | 2014-06-03 |
| KR20130047663A (ko) | 2013-05-08 |
| TWI560770B (https=) | 2016-12-01 |
| TWI600083B (zh) | 2017-09-21 |
| US8889024B2 (en) | 2014-11-18 |
| JP2013118359A (ja) | 2013-06-13 |
| US20140220785A1 (en) | 2014-08-07 |
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