KR101405175B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

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Publication number
KR101405175B1
KR101405175B1 KR1020120121063A KR20120121063A KR101405175B1 KR 101405175 B1 KR101405175 B1 KR 101405175B1 KR 1020120121063 A KR1020120121063 A KR 1020120121063A KR 20120121063 A KR20120121063 A KR 20120121063A KR 101405175 B1 KR101405175 B1 KR 101405175B1
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South Korea
Prior art keywords
film
gas
etching
silicon nitride
nitride film
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Korean (ko)
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KR20130047663A (ko
Inventor
도모유키 와타나베
미치카즈 모리모토
마모루 야쿠시지
데츠오 오노
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H10P50/263—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020120121063A 2011-10-31 2012-10-30 플라즈마 에칭 방법 Active KR101405175B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011238166 2011-10-31
JPJP-P-2011-238166 2011-10-31
JP2012229411A JP5932599B2 (ja) 2011-10-31 2012-10-17 プラズマエッチング方法
JPJP-P-2012-229411 2012-10-17

Publications (2)

Publication Number Publication Date
KR20130047663A KR20130047663A (ko) 2013-05-08
KR101405175B1 true KR101405175B1 (ko) 2014-06-10

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KR1020120121063A Active KR101405175B1 (ko) 2011-10-31 2012-10-30 플라즈마 에칭 방법

Country Status (4)

Country Link
US (2) US8741166B2 (https=)
JP (1) JP5932599B2 (https=)
KR (1) KR101405175B1 (https=)
TW (2) TWI600083B (https=)

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JP6289996B2 (ja) * 2014-05-14 2018-03-07 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9911620B2 (en) * 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
JP6557588B2 (ja) * 2015-12-04 2019-08-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9673058B1 (en) 2016-03-14 2017-06-06 Lam Research Corporation Method for etching features in dielectric layers
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
JP6796519B2 (ja) * 2017-03-10 2020-12-09 東京エレクトロン株式会社 エッチング方法
FR3065576B1 (fr) * 2017-04-25 2020-01-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de gravure d'une couche a base de sin
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
US10283370B1 (en) * 2018-03-01 2019-05-07 Applied Materials, Inc. Silicon addition for silicon nitride etching selectivity
JP6811202B2 (ja) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
US10515821B1 (en) 2018-06-26 2019-12-24 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
US10741407B2 (en) 2018-10-19 2020-08-11 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3D NAND etch
JP7075537B2 (ja) * 2020-02-10 2022-05-25 株式会社日立ハイテク プラズマ処理方法
CN115244663A (zh) * 2020-02-28 2022-10-25 朗姆研究公司 高深宽比3d nand蚀刻的侧壁凹陷的减少
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
CN113471049B (zh) 2021-06-30 2022-07-26 北京屹唐半导体科技股份有限公司 用于处理工件的方法及等离子体刻蚀机、半导体器件

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JP2008078209A (ja) 2006-09-19 2008-04-03 Hitachi High-Technologies Corp エッチング処理方法
KR20110103883A (ko) * 2010-03-15 2011-09-21 램 리써치 코포레이션 산화물에 대해 고도로 조정 가능한 선택도를 갖는 질화물 플라즈마 에칭

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EP0424299A3 (en) * 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
JP3210359B2 (ja) * 1991-05-29 2001-09-17 株式会社東芝 ドライエッチング方法
JP3172340B2 (ja) * 1993-08-12 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
JP3681533B2 (ja) 1997-02-25 2005-08-10 富士通株式会社 窒化シリコン層のエッチング方法及び半導体装置の製造方法
US5786276A (en) * 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
JP3439455B2 (ja) * 2000-12-18 2003-08-25 Ｎｅｃエレクトロニクス株式会社 異方性ドライエッチング方法
AU2002303842A1 (en) * 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US7098141B1 (en) * 2003-03-03 2006-08-29 Lam Research Corporation Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures
GB0401622D0 (en) * 2004-01-26 2004-02-25 Oxford Instr Plasma Technology Plasma etching process
KR100780944B1 (ko) * 2005-10-12 2007-12-03 삼성전자주식회사 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법
US7393788B2 (en) * 2006-02-10 2008-07-01 Cook Julie A Method and system for selectively etching a dielectric material relative to silicon
KR102023784B1 (ko) * 2011-03-04 2019-09-20 도쿄엘렉트론가부시키가이샤 질화규소막 에칭 방법

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2008078209A (ja) 2006-09-19 2008-04-03 Hitachi High-Technologies Corp エッチング処理方法
KR20110103883A (ko) * 2010-03-15 2011-09-21 램 리써치 코포레이션 산화물에 대해 고도로 조정 가능한 선택도를 갖는 질화물 플라즈마 에칭

Also Published As

Publication number Publication date
TW201335991A (zh) 2013-09-01
US20130157470A1 (en) 2013-06-20
TW201639029A (zh) 2016-11-01
US8741166B2 (en) 2014-06-03
KR20130047663A (ko) 2013-05-08
TWI560770B (https=) 2016-12-01
TWI600083B (zh) 2017-09-21
US8889024B2 (en) 2014-11-18
JP5932599B2 (ja) 2016-06-08
JP2013118359A (ja) 2013-06-13
US20140220785A1 (en) 2014-08-07

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