JP5915178B2 - 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法 - Google Patents

結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法 Download PDF

Info

Publication number
JP5915178B2
JP5915178B2 JP2011552868A JP2011552868A JP5915178B2 JP 5915178 B2 JP5915178 B2 JP 5915178B2 JP 2011552868 A JP2011552868 A JP 2011552868A JP 2011552868 A JP2011552868 A JP 2011552868A JP 5915178 B2 JP5915178 B2 JP 5915178B2
Authority
JP
Japan
Prior art keywords
container
boron nitride
pyrolytic boron
crystal growth
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011552868A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2011096597A1 (ja
Inventor
智博 川瀬
智博 川瀬
俊輔 藤井
俊輔 藤井
良明 羽木
良明 羽木
秀一 金子
秀一 金子
英俊 高山
英俊 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of JPWO2011096597A1 publication Critical patent/JPWO2011096597A1/ja
Application granted granted Critical
Publication of JP5915178B2 publication Critical patent/JP5915178B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2011552868A 2010-05-21 2011-05-20 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法 Active JP5915178B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010116944 2010-05-21
JP2010116944 2010-05-21
PCT/JP2011/061661 WO2011096597A1 (ja) 2010-05-21 2011-05-20 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法

Publications (2)

Publication Number Publication Date
JPWO2011096597A1 JPWO2011096597A1 (ja) 2013-06-13
JP5915178B2 true JP5915178B2 (ja) 2016-05-11

Family

ID=44355585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011552868A Active JP5915178B2 (ja) 2010-05-21 2011-05-20 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法

Country Status (4)

Country Link
JP (1) JP5915178B2 (zh)
CN (1) CN102906314B (zh)
DE (1) DE112011101731B4 (zh)
WO (1) WO2011096597A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6503642B2 (ja) * 2014-06-09 2019-04-24 住友電気工業株式会社 結晶成長用坩堝
CN104562191B (zh) * 2015-01-21 2017-06-06 中国工程物理研究院化工材料研究所 一种提纯固态半导体多晶材料的设备及方法
CN110016652B (zh) * 2019-04-12 2020-04-24 山东国晶新材料有限公司 一种用于制作夹持杆的热解氮化硼板材的制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02188486A (ja) * 1988-12-05 1990-07-24 American Teleph & Telegr Co <Att> 結晶の成長法
JPH06122504A (ja) * 1992-07-02 1994-05-06 Shin Etsu Chem Co Ltd 熱分解窒化ほう素容器
JPH07206596A (ja) * 1993-12-17 1995-08-08 Gold Star Cable Co Ltd ガリウムヒ素の単結晶成長用装置
JPH08268791A (ja) * 1995-03-31 1996-10-15 Hitachi Cable Ltd 縦型結晶成長方法およびそれに使用される結晶成長容器
JPH09286700A (ja) * 1995-03-16 1997-11-04 Kobe Steel Ltd 単結晶の製造方法および単結晶製造装置並びにそれに用いる原料収納容器
JP2000169277A (ja) * 1998-12-03 2000-06-20 Sumitomo Electric Ind Ltd 結晶およびその製造方法ならびにその方法に用いられる結晶成長用るつぼ
JP2010064936A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 半導体結晶の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08333186A (ja) * 1995-06-07 1996-12-17 Hitachi Cable Ltd 化合物半導体単結晶の製造方法及び製造装置
JP2868204B2 (ja) * 1995-07-05 1999-03-10 株式会社秩父富士 四ほう酸リチウム単結晶の製造装置
JPH09110575A (ja) 1995-10-19 1997-04-28 Showa Denko Kk 単結晶製造用ルツボ及び単結晶の製造方法
JPH11199362A (ja) 1998-01-20 1999-07-27 Kobe Steel Ltd 化合物半導体単結晶の製造方法
JP3818311B1 (ja) * 2005-03-23 2006-09-06 住友電気工業株式会社 結晶育成用坩堝

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02188486A (ja) * 1988-12-05 1990-07-24 American Teleph & Telegr Co <Att> 結晶の成長法
JPH06122504A (ja) * 1992-07-02 1994-05-06 Shin Etsu Chem Co Ltd 熱分解窒化ほう素容器
JPH07206596A (ja) * 1993-12-17 1995-08-08 Gold Star Cable Co Ltd ガリウムヒ素の単結晶成長用装置
JPH09286700A (ja) * 1995-03-16 1997-11-04 Kobe Steel Ltd 単結晶の製造方法および単結晶製造装置並びにそれに用いる原料収納容器
JPH08268791A (ja) * 1995-03-31 1996-10-15 Hitachi Cable Ltd 縦型結晶成長方法およびそれに使用される結晶成長容器
JP2000169277A (ja) * 1998-12-03 2000-06-20 Sumitomo Electric Ind Ltd 結晶およびその製造方法ならびにその方法に用いられる結晶成長用るつぼ
JP2010064936A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 半導体結晶の製造方法

Also Published As

Publication number Publication date
CN102906314B (zh) 2015-09-30
DE112011101731T5 (de) 2013-03-21
JPWO2011096597A1 (ja) 2013-06-13
WO2011096597A1 (ja) 2011-08-11
CN102906314A (zh) 2013-01-30
DE112011101731B4 (de) 2018-03-22

Similar Documents

Publication Publication Date Title
JP7046117B2 (ja) 金属るつぼ内に含まれる金属からベータ相の酸化ガリウム（β－Ｇａ２Ｏ３）単結晶を成長させる方法
JP5858097B2 (ja) 単結晶製造装置、単結晶の製造方法
JP4830312B2 (ja) 化合物半導体単結晶とその製造方法
JP5915178B2 (ja) 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法
CN1643189A (zh) 用于生长ⅱ－ⅵ族和ⅲ－ⅴ族化合物单晶体的装置
JP2008247706A (ja) コランダム単結晶の育成方法、コランダム単結晶およびコランダム単結晶ウェーハ
JP2010260747A (ja) 半導体結晶の製造方法
Capper Bulk crystal growth: methods and materials
JP5370394B2 (ja) 化合物半導体単結晶基板
JP2008120614A (ja) 化合物半導体単結晶基板及びその製造方法
US6878202B2 (en) Method for growing single crystal of compound semiconductor and substrate cut out therefrom
US11946155B2 (en) Single-crystal growing crucible, single-crystal production method and single crystal
TWI817985B (zh) 砷化鎵單晶體及砷化鎵單晶基板
JP5370393B2 (ja) 化合物半導体単結晶基板
Sun et al. Progress in the CdZnTe single crystal growth and substrates fabrication
JP2016132599A (ja) サファイア単結晶製造装置、及びサファイア単結晶の製造方法
TWI793167B (zh) 砷化鎵系化合物半導體結晶及晶圓群
JP3250409B2 (ja) 縦型結晶成長方法およびそれに使用される結晶成長容器
JP2016132600A (ja) サファイア単結晶製造装置、及びサファイア単結晶の製造方法
JP2016169112A (ja) サファイア単結晶の製造方法
TW202201493A (zh) 半導體基板的製造方法、半導體基板以及成長層的形成方法
US20120097092A1 (en) Apparatus for growing single crystals
JP2000154089A (ja) るつぼ壁面被覆用ｂ２ｏ３材料及びその製造方法並びに、それを用いた単結晶製造方法及びその方法により製造された単結晶
JP6487675B2 (ja) 多結晶シリコンインゴット製造方法、多結晶シリコンインゴットの用途の製造方法及び多結晶シリコンインゴット
JP5981356B2 (ja) 化合物半導体単結晶、化合物半導体ウエハ、および化合物半導体単結晶の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140424

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20140708

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20140710

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150623

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150819

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160308

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160321

R150 Certificate of patent or registration of utility model

Ref document number: 5915178

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250