JP5907686B2 - 大面積シリコン基板及びその他の基板上の多層ｉｉｉ族窒化物バッファの成長 - Google Patents

大面積シリコン基板及びその他の基板上の多層ｉｉｉ族窒化物バッファの成長 Download PDF

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JP5907686B2
JP5907686B2 JP2011191264A JP2011191264A JP5907686B2 JP 5907686 B2 JP5907686 B2 JP 5907686B2 JP 2011191264 A JP2011191264 A JP 2011191264A JP 2011191264 A JP2011191264 A JP 2011191264A JP 5907686 B2 JP5907686 B2 JP 5907686B2
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epitaxial
layer
regions
nitride
forming
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JP2012054559A5 (enExample
JP2012054559A (ja
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アール． バール サンディープ
アール． バール サンディープ
ラムダニ ジャマール
ラムダニ ジャマール
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National Semiconductor Corp
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D62/113—Isolations within a component, i.e. internal isolations
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
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    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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JP2011191264A 2010-09-02 2011-09-02 大面積シリコン基板及びその他の基板上の多層ｉｉｉ族窒化物バッファの成長 Active JP5907686B2 (ja)

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US12/807,336 2010-09-02
US12/807,336 US8592292B2 (en) 2010-09-02 2010-09-02 Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates

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JP2012054559A5 JP2012054559A5 (enExample) 2014-09-18
JP5907686B2 true JP5907686B2 (ja) 2016-04-26

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EP2426699A1 (en) 2012-03-07
US9082817B2 (en) 2015-07-14
US9064928B2 (en) 2015-06-23
US20120056244A1 (en) 2012-03-08
US20140051226A1 (en) 2014-02-20
US8592292B2 (en) 2013-11-26
EP2426699B1 (en) 2019-02-27
JP2012054559A (ja) 2012-03-15

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