JP2020508278A - 加工基板に集積されているrfデバイス - Google Patents
加工基板に集積されているrfデバイス Download PDFInfo
- Publication number
- JP2020508278A JP2020508278A JP2019545339A JP2019545339A JP2020508278A JP 2020508278 A JP2020508278 A JP 2020508278A JP 2019545339 A JP2019545339 A JP 2019545339A JP 2019545339 A JP2019545339 A JP 2019545339A JP 2020508278 A JP2020508278 A JP 2020508278A
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- Prior art keywords
- layer
- silicon oxide
- bonded
- ceramic core
- polycrystalline ceramic
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 239000000919 ceramic Substances 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 229920005591 polysilicon Polymers 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 47
- 230000001939 inductive effect Effects 0.000 claims description 46
- 229910002601 GaN Inorganic materials 0.000 claims description 45
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 377
- 239000011229 interlayer Substances 0.000 abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 239000013078 crystal Substances 0.000 abstract description 17
- 239000012790 adhesive layer Substances 0.000 description 35
- 230000008569 process Effects 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- 229910010293 ceramic material Inorganic materials 0.000 description 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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Abstract
Description
[0001]本出願は、2017年2月21日に出願された米国仮特許出願第62/461,722号および2018年2月7日に出願された米国非仮特許出願第15/891,205号の利益を主張し、これらの内容は参照によりその全体が本明細書に組み込まれる。
Claims (20)
- 無線周波数(RF)デバイスのための基板であって、
多結晶セラミックコアと、
中間層構造と
を備え、前記中間層構造は、
前記多結晶セラミックコアに結合されている第1の酸化ケイ素層と、
前記第1の酸化ケイ素層に結合されているポリシリコン層と、
前記ポリシリコン層に結合されている第2の酸化ケイ素層と、
前記第2の酸化ケイ素層に結合されているバリア層と、
前記バリア層に結合されている第3の酸化ケイ素層と、
前記第3の酸化ケイ素層に結合されている実質的に単結晶のシリコン層と
を備える、基板。 - 前記多結晶セラミックコアが窒化アルミニウムを含む、請求項1に記載の基板。
- 前記第3の酸化ケイ素層の厚さが約250nm未満である、請求項1に記載の基板。
- 前記多結晶セラミックコアが、約25μm以下の厚さを有する、請求項1に記載の基板。
- 前記実質的に単結晶のシリコン層に結合されているエピタキシャル窒化ガリウム(GaN)層と、
前記エピタキシャルGaN層上に形成されている共平面導波路と
をさらに備える、請求項1に記載の基板。 - 前記基板は、
前記エピタキシャルGaN層に結合されている二次元電子ガス(2DEG)誘導層と、
電界効果トランジスタ(FET)と
をさらに備え、
前記FETは、
前記2DEG誘導層の第1の領域に結合されているドレインと、
前記2DEG誘導層の第2の領域に結合されているソースと、
前記2DEG誘導層の第3の領域に結合されているゲート誘電体層と
前記ゲート誘電体層に結合されているゲートと
を備える、請求項5に記載の基板。 - 前記バリア層は、
前記第2の酸化ケイ素層に結合されている第1の窒化ケイ素層と、
前記第1の窒化ケイ素層に結合されている金属層と、
前記金属層に結合されている第2の窒化ケイ素層と
を備える、請求項6に記載の基板。 - 前記基板は、前記エピタキシャルGaN層および前記2DEG誘導層を貫通する第1のビアをさらに備え、前記第1のビアは前記ソースを前記金属層に結合し、前記金属層はグランドに接続される、請求項7に記載の基板。
- 前記多結晶セラミックコアが、前記多結晶セラミックコアの、前記第1の酸化ケイ素層とは反対側の表面上にくぼみを含み、前記基板は、
前記くぼみに対応する位置において前記多結晶セラミックコアを通る第2のビアと、
前記多結晶セラミックコアの前記表面に結合され、前記第2のビアを充填する裏面金属層と
をさらに備え、
前記第2のビアは前記FETの前記ソースを前記裏面金属層に接続し、前記裏面金属層はグランドに接続される、請求項8に記載の基板。 - 前記くぼみに対応する位置における前記多結晶セラミックコアの厚さが10μm未満である、請求項9に記載の基板。
- 前記くぼみの幅が前記FETの幅よりも大きい、請求項9に記載の基板。
- 無線周波数(RF)デバイスであって、
多結晶セラミックコアと、
中間層構造であり、
前記多結晶セラミックコアに結合されている第1の酸化ケイ素層、
前記第1の酸化ケイ素層に結合されているポリシリコン層、
前記ポリシリコン層に結合されている第2の酸化ケイ素層、
前記第2の酸化ケイ素層に結合されている第1の窒化ケイ素層、
前記第1の窒化ケイ素層に結合されている金属層、
前記金属層に結合されている第2の窒化ケイ素層、
前記第2の窒化ケイ素層に結合されている第3の酸化ケイ素層、および
前記第3の酸化ケイ素層に結合されている実質的に単結晶のシリコン層
を備える、中間層構造と、
前記実質的に単結晶のシリコン層に結合されているエピタキシャル窒化ガリウム(GaN)層と、
前記エピタキシャルGaN層に結合されている二次元電子ガス(2DEG)誘導層と、
電界効果トランジスタ(FET)であり、
前記2DEG誘導層の第1の領域に結合されているドレイン、
前記2DEG誘導層の第2の領域に結合されているソース、
前記2DEG誘導層の第3の領域に結合されているゲート誘電体層、および
前記ゲート誘電体層に結合されているゲート
を備える、FETと、
前記エピタキシャルGaN層および前記2DEG誘導層を通る第1のビアであり、前記第1のビアは、前記ソースを前記中間層構造の前記金属層に結合し、前記金属層はグランドに接続される、第1のビアと
を備える、RFデバイス。 - 前記エピタキシャルGaN層に結合されている導波路をさらに備える、請求項12に記載のRFデバイス。
- 前記第3の酸化ケイ素層は、約250nm以下の厚さを有する、請求項12に記載のRFデバイス。
- 前記多結晶セラミックコアは、約25μm以下の厚さを有する、請求項12に記載のRFデバイス。
- 前記多結晶セラミックコアが、前記多結晶セラミックコアの、前記第1の酸化ケイ素層とは反対側の表面上にくぼみを含み、前記RFデバイスは、
前記くぼみに対応する位置において前記多結晶セラミックコアを通る第2のビアと、
前記多結晶セラミックコアの前記表面に結合され、前記第2のビアを充填する裏面金属層と
をさらに備え、
前記第2のビアは前記FETの前記ソースを前記裏面金属層に接続し、前記裏面金属層はグランドに接続される、請求項12に記載のRFデバイス。 - 無線周波数(RF)デバイスを作製する方法であって、
多結晶セラミックコアを提供することと、
前記多結晶セラミックコアに結合されている中間層構造を形成することであり、前記中間層構造は、
前記多結晶セラミックコアに結合されている第1の酸化ケイ素層、
前記第1の酸化ケイ素層に結合されているポリシリコン層、
前記ポリシリコン層に結合されている第2の酸化ケイ素層、
前記第2の酸化ケイ素層に結合されているバリア層、
前記バリア層に結合されている第3の酸化ケイ素層、および
前記第3の酸化ケイ素層に結合されている実質的に単結晶のシリコン層
を備える、中間層構造を形成することと、
前記実質的に単結晶のシリコン層に結合されているエピタキシャルGaN層を成長させることと、
前記エピタキシャルGaN層に結合されている二次元電子ガス(2DEG)誘導層を成長させることと、
電界効果トランジスタ(FET)を形成することであり、前記FETは、
前記2DEG誘導層の第1の領域に結合されているドレイン、
前記2DEG誘導層の第2の領域に結合されているソース、
前記2DEG誘導層の第3の領域に結合されているゲート誘電体層、および
前記ゲート誘電体層に結合されているゲート
を備える、FETを形成することと
を含む、方法。 - 前記バリア層を形成することは、
前記第2の酸化ケイ素層に結合されている第1の窒化ケイ素層を形成することと、
前記第1の窒化ケイ素層に結合されている金属層を形成することと、
前記金属層に結合されている第2の窒化ケイ素層を形成することと
を含む、請求項17に記載の方法。 - 前記方法は、前記2DEG誘導層および前記エピタキシャルGaN層を貫通する第1のビアを形成することをさらに備え、前記第1のビアは前記ソースを前記金属層に結合し、前記金属層はグランドに接続される、請求項18に記載の方法。
- 前記多結晶セラミックコアが、前記多結晶セラミックコアの、前記第1の酸化ケイ素層とは反対側の表面上にくぼみを含み、前記方法は、
前記くぼみに対応する位置において前記多結晶セラミックコアを通る第2のビアを形成することと、
前記多結晶セラミックコアの前記表面に結合され、前記第2のビアを充填する裏面金属層を形成することと
をさらに含み、
前記第2のビアは前記FETの前記ソースを前記裏面金属層に接続し、前記裏面金属層はグランドに接続される、請求項17に記載の方法。
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2018
- 2018-02-07 US US15/891,205 patent/US10622468B2/en active Active
- 2018-02-08 KR KR1020237024268A patent/KR20230129170A/ko not_active Application Discontinuation
- 2018-02-08 SG SG11201907481PA patent/SG11201907481PA/en unknown
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JP7190244B2 (ja) | 2022-12-15 |
CN110383420B (zh) | 2023-11-28 |
KR20190118186A (ko) | 2019-10-17 |
US11271101B2 (en) | 2022-03-08 |
KR102559594B1 (ko) | 2023-07-25 |
TWI749171B (zh) | 2021-12-11 |
EP3586355A4 (en) | 2021-01-06 |
WO2018156357A1 (en) | 2018-08-30 |
US20200212213A1 (en) | 2020-07-02 |
JP2023051915A (ja) | 2023-04-11 |
US20200212214A1 (en) | 2020-07-02 |
CN117613070A (zh) | 2024-02-27 |
TW202209437A (zh) | 2022-03-01 |
US11121244B2 (en) | 2021-09-14 |
EP3586355A1 (en) | 2020-01-01 |
KR20230129170A (ko) | 2023-09-06 |
US20180240902A1 (en) | 2018-08-23 |
TWI803054B (zh) | 2023-05-21 |
CN110383420A (zh) | 2019-10-25 |
TW201837990A (zh) | 2018-10-16 |
US10622468B2 (en) | 2020-04-14 |
SG11201907481PA (en) | 2019-09-27 |
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