SG11201907481PA - Rf device integrated on an engineered substrate - Google Patents
Rf device integrated on an engineered substrateInfo
- Publication number
- SG11201907481PA SG11201907481PA SG11201907481PA SG11201907481PA SG11201907481PA SG 11201907481P A SG11201907481P A SG 11201907481PA SG 11201907481P A SG11201907481P A SG 11201907481PA SG 11201907481P A SG11201907481P A SG 11201907481PA SG 11201907481P A SG11201907481P A SG 11201907481PA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon oxide
- international
- oxide layer
- layer coupled
- qromis
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000010410 layer Substances 0.000 abstract 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 6
- 239000011229 interlayer Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
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- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/122—Single quantum well structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Medicinal Preparation (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762461722P | 2017-02-21 | 2017-02-21 | |
US15/891,205 US10622468B2 (en) | 2017-02-21 | 2018-02-07 | RF device integrated on an engineered substrate |
PCT/US2018/017405 WO2018156357A1 (en) | 2017-02-21 | 2018-02-08 | Rf device integrated on an engineered substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201907481PA true SG11201907481PA (en) | 2019-09-27 |
Family
ID=63167415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201907481PA SG11201907481PA (en) | 2017-02-21 | 2018-02-08 | Rf device integrated on an engineered substrate |
Country Status (8)
Country | Link |
---|---|
US (3) | US10622468B2 (ja) |
EP (1) | EP3586355A4 (ja) |
JP (2) | JP7190244B2 (ja) |
KR (2) | KR20230129170A (ja) |
CN (2) | CN117613070A (ja) |
SG (1) | SG11201907481PA (ja) |
TW (2) | TWI803054B (ja) |
WO (1) | WO2018156357A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10290674B2 (en) | 2016-04-22 | 2019-05-14 | QROMIS, Inc. | Engineered substrate including light emitting diode and power circuitry |
US10622468B2 (en) | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
US10399905B2 (en) * | 2017-08-31 | 2019-09-03 | Corning Incorporated | Ceramic housing with texture |
US10734303B2 (en) | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
US10686037B2 (en) * | 2018-07-19 | 2020-06-16 | Vanguard International Semiconductor Corporation | Semiconductor structure with insulating substrate and fabricating method thereof |
JP7070848B2 (ja) * | 2018-07-26 | 2022-05-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US11430873B2 (en) * | 2018-09-29 | 2022-08-30 | Intel Corporation | Self aligned gate connected plates for group III-Nitride devices and methods of fabrication |
CN111009530A (zh) * | 2018-10-08 | 2020-04-14 | 世界先进积体电路股份有限公司 | 半导体结构以及制造方法 |
US10923585B2 (en) | 2019-06-13 | 2021-02-16 | Cree, Inc. | High electron mobility transistors having improved contact spacing and/or improved contact vias |
US10971612B2 (en) * | 2019-06-13 | 2021-04-06 | Cree, Inc. | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
JP7429522B2 (ja) * | 2019-11-22 | 2024-02-08 | 住友化学株式会社 | Iii族窒化物積層基板および半導体素子 |
CN115698391A (zh) * | 2020-06-09 | 2023-02-03 | 信越化学工业株式会社 | Iii族氮化物系外延生长用基板及其制造方法 |
WO2023119916A1 (ja) * | 2021-12-21 | 2023-06-29 | 信越半導体株式会社 | 窒化物半導体基板および窒化物半導体基板の製造方法 |
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FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
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2018
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- 2018-02-08 EP EP18758343.0A patent/EP3586355A4/en active Pending
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- 2018-02-08 CN CN201880012918.4A patent/CN110383420B/zh active Active
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US11271101B2 (en) | 2022-03-08 |
TWI749171B (zh) | 2021-12-11 |
US20200212213A1 (en) | 2020-07-02 |
CN117613070A (zh) | 2024-02-27 |
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JP7190244B2 (ja) | 2022-12-15 |
EP3586355A4 (en) | 2021-01-06 |
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WO2018156357A1 (en) | 2018-08-30 |
US11121244B2 (en) | 2021-09-14 |
JP2023051915A (ja) | 2023-04-11 |
US20200212214A1 (en) | 2020-07-02 |
CN110383420A (zh) | 2019-10-25 |
TWI803054B (zh) | 2023-05-21 |
TW201837990A (zh) | 2018-10-16 |
KR102559594B1 (ko) | 2023-07-25 |
US20180240902A1 (en) | 2018-08-23 |
TW202209437A (zh) | 2022-03-01 |
KR20230129170A (ko) | 2023-09-06 |
CN110383420B (zh) | 2023-11-28 |
JP2020508278A (ja) | 2020-03-19 |
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