KR20230129170A - 가공된 기판에 통합된 무선 주파수 디바이스 - Google Patents
가공된 기판에 통합된 무선 주파수 디바이스 Download PDFInfo
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- KR20230129170A KR20230129170A KR1020237024268A KR20237024268A KR20230129170A KR 20230129170 A KR20230129170 A KR 20230129170A KR 1020237024268 A KR1020237024268 A KR 1020237024268A KR 20237024268 A KR20237024268 A KR 20237024268A KR 20230129170 A KR20230129170 A KR 20230129170A
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- ceramic core
- polycrystalline ceramic
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- 239000000758 substrate Substances 0.000 title claims abstract description 105
- 239000010410 layer Substances 0.000 claims abstract description 536
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 239000011229 interlayer Substances 0.000 claims abstract description 56
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000919 ceramic Substances 0.000 claims abstract description 49
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 69
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 52
- 229910002601 GaN Inorganic materials 0.000 claims description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 230000006698 induction Effects 0.000 claims description 22
- 230000001939 inductive effect Effects 0.000 claims description 22
- 239000012790 adhesive layer Substances 0.000 claims description 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
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- 230000008569 process Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 14
- 229910010293 ceramic material Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
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- 238000005137 deposition process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
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- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
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- 229910052796 boron Inorganic materials 0.000 description 2
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- 239000011575 calcium Substances 0.000 description 2
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- -1 yttria) Chemical compound 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L29/2003—Nitride compounds
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Applications Claiming Priority (6)
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| US201762461722P | 2017-02-21 | 2017-02-21 | |
| US62/461,722 | 2017-02-21 | ||
| US15/891,205 | 2018-02-07 | ||
| US15/891,205 US10622468B2 (en) | 2017-02-21 | 2018-02-07 | RF device integrated on an engineered substrate |
| PCT/US2018/017405 WO2018156357A1 (en) | 2017-02-21 | 2018-02-08 | Rf device integrated on an engineered substrate |
| KR1020197027362A KR102559594B1 (ko) | 2017-02-21 | 2018-02-08 | 가공된 기판에 통합된 무선 주파수 디바이스 |
Related Parent Applications (1)
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| KR1020197027362A Division KR102559594B1 (ko) | 2017-02-21 | 2018-02-08 | 가공된 기판에 통합된 무선 주파수 디바이스 |
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| KR20230129170A true KR20230129170A (ko) | 2023-09-06 |
| KR102702119B1 KR102702119B1 (ko) | 2024-09-03 |
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| JP2020508278A (ja) | 2020-03-19 |
| US10622468B2 (en) | 2020-04-14 |
| US20200212213A1 (en) | 2020-07-02 |
| US20180240902A1 (en) | 2018-08-23 |
| US11271101B2 (en) | 2022-03-08 |
| EP3586355A4 (en) | 2021-01-06 |
| TWI803054B (zh) | 2023-05-21 |
| JP7550202B2 (ja) | 2024-09-12 |
| CN110383420A (zh) | 2019-10-25 |
| TW202209437A (zh) | 2022-03-01 |
| JP2023051915A (ja) | 2023-04-11 |
| SG11201907481PA (en) | 2019-09-27 |
| KR102559594B1 (ko) | 2023-07-25 |
| US11121244B2 (en) | 2021-09-14 |
| KR20190118186A (ko) | 2019-10-17 |
| TW201837990A (zh) | 2018-10-16 |
| US20200212214A1 (en) | 2020-07-02 |
| CN110383420B (zh) | 2023-11-28 |
| TWI749171B (zh) | 2021-12-11 |
| EP3586355A1 (en) | 2020-01-01 |
| JP7190244B2 (ja) | 2022-12-15 |
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