JP5895650B2 - 撮像装置および撮像表示システム - Google Patents

撮像装置および撮像表示システム Download PDF

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Publication number
JP5895650B2
JP5895650B2 JP2012072895A JP2012072895A JP5895650B2 JP 5895650 B2 JP5895650 B2 JP 5895650B2 JP 2012072895 A JP2012072895 A JP 2012072895A JP 2012072895 A JP2012072895 A JP 2012072895A JP 5895650 B2 JP5895650 B2 JP 5895650B2
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Prior art keywords
electrode
imaging
pixels
imaging device
voltage
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Expired - Fee Related
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JP2012072895A
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English (en)
Japanese (ja)
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JP2013205140A (ja
JP2013205140A5 (enExample
Inventor
千田　みちる
みちる 千田
田中　勉
田中　　勉
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Sony Corp
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Sony Corp
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Priority to JP2012072895A priority Critical patent/JP5895650B2/ja
Priority to US13/777,250 priority patent/US8952336B2/en
Priority to CN201310091011.0A priority patent/CN103369258B/zh
Publication of JP2013205140A publication Critical patent/JP2013205140A/ja
Publication of JP2013205140A5 publication Critical patent/JP2013205140A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
JP2012072895A 2012-03-28 2012-03-28 撮像装置および撮像表示システム Expired - Fee Related JP5895650B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012072895A JP5895650B2 (ja) 2012-03-28 2012-03-28 撮像装置および撮像表示システム
US13/777,250 US8952336B2 (en) 2012-03-28 2013-02-26 Image pickup device and image pickup display system
CN201310091011.0A CN103369258B (zh) 2012-03-28 2013-03-21 图像拾取装置和图像拾取显示系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012072895A JP5895650B2 (ja) 2012-03-28 2012-03-28 撮像装置および撮像表示システム

Publications (3)

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JP2013205140A JP2013205140A (ja) 2013-10-07
JP2013205140A5 JP2013205140A5 (enExample) 2015-04-02
JP5895650B2 true JP5895650B2 (ja) 2016-03-30

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JP2012072895A Expired - Fee Related JP5895650B2 (ja) 2012-03-28 2012-03-28 撮像装置および撮像表示システム

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US (1) US8952336B2 (enExample)
JP (1) JP5895650B2 (enExample)
CN (1) CN103369258B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5895504B2 (ja) 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
JP6125017B2 (ja) * 2013-08-07 2017-05-10 シャープ株式会社 Ｘ線イメージセンサー用基板
JP6555867B2 (ja) * 2014-09-26 2019-08-07 キヤノン株式会社 撮像装置
JP6512909B2 (ja) 2015-04-09 2019-05-15 キヤノン株式会社 放射線撮像装置および放射線撮像システム
JP7020770B2 (ja) * 2015-12-04 2022-02-16 キヤノン株式会社 撮像装置、および、撮像システム
DE102016122658B4 (de) 2015-12-04 2021-07-15 Canon Kabushiki Kaisha Abbildungsvorrichtung und Abbildungssystem
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
TWI756207B (zh) * 2016-03-01 2022-03-01 日商新力股份有限公司 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法
JP7496208B2 (ja) 2019-12-23 2024-06-06 株式会社ジャパンディスプレイ 検出装置

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GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
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US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
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EP0897597B1 (en) * 1996-05-08 2002-09-11 iFire Technology Inc. High resolution flat panel for radiation imaging
JPH11218858A (ja) * 1998-01-30 1999-08-10 Konica Corp Ｘ線撮像パネルの残留電荷除去方法
KR100279294B1 (ko) * 1998-05-21 2001-02-01 윤종용 개선된 이득을 가지는 소오스 팔로워 회로 및그것을 이용한 고체 촬상 장치의 출력 회로
JP4188544B2 (ja) * 2000-07-03 2008-11-26 富士フイルム株式会社 画像情報記録方法および装置並びに画像情報読取方法および装置
JP3984808B2 (ja) * 2000-09-07 2007-10-03 キヤノン株式会社 信号処理装置及びそれを用いた撮像装置並びに放射線撮像システム
JP3678162B2 (ja) 2001-04-12 2005-08-03 株式会社島津製作所 放射線検出装置
JP2004071638A (ja) * 2002-08-01 2004-03-04 Canon Inc 放射線撮像装置及びそれを用いた放射線撮像システム
JP3757946B2 (ja) * 2003-03-18 2006-03-22 株式会社島津製作所 放射線撮像装置
JP2006005057A (ja) * 2004-06-16 2006-01-05 Fuji Photo Film Co Ltd 放射線画像記録媒体および画像表示媒体
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JP4106397B2 (ja) * 2006-09-14 2008-06-25 株式会社島津製作所 光または放射線検出器の製造方法
JP2008089345A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 放射線変換パネル及びそれを用いた放射線画像情報読取装置並びに読取方法
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JP5070031B2 (ja) * 2007-12-25 2012-11-07 富士フイルム株式会社 放射線画像検出器
JP5361267B2 (ja) * 2008-07-18 2013-12-04 富士フイルム株式会社 信号ライン補正方法および装置
JP5602390B2 (ja) * 2008-08-19 2014-10-08 富士フイルム株式会社 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置
JP5172573B2 (ja) * 2008-09-29 2013-03-27 富士フイルム株式会社 残像補正方法および装置
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Also Published As

Publication number Publication date
US8952336B2 (en) 2015-02-10
US20130256544A1 (en) 2013-10-03
JP2013205140A (ja) 2013-10-07
CN103369258B (zh) 2017-09-08
CN103369258A (zh) 2013-10-23

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