JP5869144B2 - マスクを含む装置およびこれを用いた光照射方法 - Google Patents
マスクを含む装置およびこれを用いた光照射方法 Download PDFInfo
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Polarising Elements (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
b = (a/t) × w
5a ≦ t
[マスクの製作]
透光性維持構造体のクオーツ板の一面を曲面加工して、曲率半径が約200mm程度の曲面を形成した。その後、形成された曲面上にスパッタリングでクロムを蒸着して、厚さが約200nm程度である金属層を形成した。その後、レーザー蝕刻方式で金属層を加工して、図2のような形態を有し、開口部の幅wが約540μmであり、厚さtが約100mmであり、開口部間の間隔が約540μmである金属層を製作して、図5のような形態のマスクを製作した。
前記製造されたマスクを使用して、図5及び図7に示したような装置を構成した。具体的には、光源ではUVランプを使用し、集光板では一般的なコリメーターレンズを使用し、偏光板ではワイヤグリッド偏向板を使用して、光源から照射された光が集光板で集光された後に偏向板を経てマスクに入射されるように装置を設計した。被照射体が据え置かれる装備では、曲面を有するロールを使用し、製作されたマスクの凹部の表面が前記ロールに対応するようにマスクを設置した。この時、マスクと被照射体が据え置かれるロールとの距離が約200μm程度になるようにした。ロールの曲率半径とマスクの曲率半径をおおよそ一致させて前記距離がロールの表面とマスクの全面でおおよそ同一に確保されるようにした。
[マスクの製作]
厚さが約50μm程度である金属フィルム(銅フィルム)をレーザー蝕刻で加工して、図2のような形態を有し、開口部の幅wが約540μmであり、厚さtが約100mmであり、開口部間の間隔が約540μmである開口部が形成された金属フィルムを製造した。その後、製造された金属フィルムを、一面に約200mm程度の曲面で形成されるように曲面加工されたクオーツ板の曲面に付着して、図5ような形態のマスクを製作した。
前記製造されたマスクを使用したことの以外は、実施例1と同一な方式で光学フィルタを製造した。このような方式で配向処理された光配向膜の拡大写真は、図9に示した。
2次配向過程で、マスクと光配向膜の間隔が約500μm程度になるように調節したことの以外は、実施例1と同一な方式で光学フィルタを製造した。このような方式で配向処理された光配向膜の拡大写真は、図10に示した。
40, 102:金属層
42, 1021:開口部
50:被照射体
t:開口部の厚さ
w:開口部の幅
L1、L2:光
a:マスクと被照射体間の距離
b:離脱距離
S:照射部位
60:被照射体が据え置かれる装備
10、101、102:光照射手段
1:マスクを含む装置
Claims (13)
- 被照射体が据え置かれる装備と、
マスクと、
を含み、
前記マスクは、
曲面形状の一面を有する透光性支持構造体と、
前記透光性支持構造体の前記曲面形状に沿った一面を有し、被照射体に光をガイドすることができる開口部が一つ以上形成されている金属層と、を含み、
前記マスクの前記金属層の前記開口部の厚さは、前記マスクと前記被照射体が据え置かれる前記装備との間の距離の5倍以上であることを特徴とする装置。 - 前記透光性支持構造体は、透光性セラミックス構造物であることを特徴とする請求項1に記載の装置。
- 前記金属層は、金属蒸着層または金属フィルム層であることを特徴とする請求項1に記載の装置。
- 前記金属層は、金、銀、クロム、アルミニウム、銅、チタニウム、ニッケル、モリブデンまたはタングステンを含むことを特徴とする請求項1から3の何れか1項に記載の装置。
- 前記透光性支持構造体の金属層が形成される一面は、曲面で形成されており、金属層は、前記曲面上に曲面形状で形成されていることを特徴とする請求項1から4の何れか1項に記載の装置。
- 曲面形状の金属層の曲率半径は、10mm〜500mmであることを特徴とする請求項5に記載の装置。
- 前記マスク及び前記被照射体が据え置かれる装備との距離は、50mm以下であることを特徴とする請求項1に記載の装置。
- 前記被照射体が据え置かれる装備は、前記被照射体の表面を曲面で維持した状態で前記被照射体を据え置くことができるように形成されていることを特徴とする請求項1に記載の装置。
- 前記被照射体が据え置かれる装備は、前記被照射体の表面を10mm〜500mmの曲率半径を有する曲面で維持するように形成されていることを特徴とする請求項8に記載の装置。
- 前記マスクに向いて直線偏光された光を照射することができる光源をさらに含むことを特徴とする請求項1に記載の装置。
- 請求項1に記載の装置に含まれる被照射体が据え置かれる装備に被照射体を据え置き、請求項1に記載の装置のマスクを媒介で前記被照射体に光を照射することを特徴とする方法。
- 前記被照射体の表面を曲面で維持した状態で前記マスクを媒介で光を照射することを特徴とする請求項11に記載の方法。
- 曲面形状を有するマスクを媒介で表面が曲面で維持された被照射体に光を照射することを特徴とする請求項12に記載の方法。
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