JP5863272B2 - ディスプレイ装置及びその製造方法 - Google Patents
ディスプレイ装置及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000003990 capacitor Substances 0.000 claims description 124
- 239000010410 layer Substances 0.000 claims description 123
- 239000004065 semiconductor Substances 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 44
- 239000011229 interlayer Substances 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 230000002265 prevention Effects 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- 230000003449 preventive effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 148
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Description
前記ソース電極及び前記ドレイン電極の少なくとも一部は前記半導体層上に形成され、前記ソース電極及び前記ドレイン電極の前記第2透明導電膜は、各々前記ソース電極及び前記ドレイン電極の前記第2金属膜と前記半導体層との間で抵抗性接触層となる。
前記データ配線を覆う層間絶縁膜をさらに含み、前記層間絶縁膜は、前記第2キャパシター電極の一部を露出する画素コンタクト孔を有する。
前記層間絶縁膜は、有機物質を含む。
80 キャパシター、
101 ディスプレイ装置、
111 基板、
131 ゲートライン、
132 キャパシターライン、
133 ゲート電極、
138 第1キャパシター電極、
140 ゲート絶縁膜、
153 半導体層、
160 エッチング防止膜、
171 データライン、
175 ソース電極、
177 ドレイン電極、
178 第2キャパシター電極、
180 層間絶縁膜、
310 画素電極。
Claims (30)
- 基板、
前記基板上に形成された第1透明導電膜及び前記第1透明導電膜上に形成された第1金属膜を含む多重膜構造と、前記第1透明導電膜で形成された単一膜構造とを含むゲート配線、
前記ゲート配線の一部の領域上に形成された半導体層、及び
前記半導体層上に形成された第2透明導電膜及び前記第2透明導電膜上に形成された第2金属膜を含む多重膜構造と、前記第2透明導電膜で形成された単一膜構造とを含むデータ配線、
を含むことを特徴とするディスプレイ装置。 - 前記ゲート配線は、ゲート電極、第1キャパシター電極、及びキャパシターラインを含み、
前記半導体層の少なくとも一部は前記ゲート電極上に形成されることを特徴とする、請求項1に記載のディスプレイ装置。 - 前記ゲート電極は、前記第1透明導電膜及び前記第1金属膜を含む多重膜で形成され、
前記第1キャパシター電極及び前記キャパシターラインは、前記第1透明導電膜で形成されることを特徴とする、請求項2に記載のディスプレイ装置。 - 前記ゲート電極及び前記キャパシターラインは、前記第1透明導電膜及び前記第1金属膜を含む多重膜で形成され、
前記第1キャパシター電極は、前記第1透明導電膜で形成されることを特徴とする、請求項2に記載のディスプレイ装置。 - 前記データ配線は、ソース電極、ドレイン電極、及び第2キャパシター電極を含み、
前記ソース電極及び前記ドレイン電極は、各々前記半導体層と接触し、前記第2キャパシター電極の少なくとも一部は前記第1キャパシター電極と重なることを特徴とする、請求項2乃至4のうちのいずれか一つに記載のディスプレイ装置。 - 前記ソース電極及び前記ドレイン電極は、前記第2透明導電膜及び前記第2金属膜を含む多重膜で形成され、
前記第2キャパシター電極は、前記第2透明導電膜で形成されることを特徴とする、請求項5に記載のディスプレイ装置。 - 前記第2キャパシター電極は、前記ドレイン電極の第2透明導電膜から延びることを特徴とする、請求項6に記載のディスプレイ装置。
- 前記ソース電極及び前記ドレイン電極の少なくとも一部は前記半導体層上に形成され、
前記ソース電極及び前記ドレイン電極の前記第2透明導電膜は、各々前記ソース電極及び前記ドレイン電極の前記第2金属膜と前記半導体層との間で抵抗性接触層となることを特徴とする、請求項6または7に記載のディスプレイ装置。 - 前記データ配線を覆う層間絶縁膜をさらに含み、
前記層間絶縁膜は、前記第2キャパシター電極の一部を露出する画素コンタクト孔を有することを特徴とする、請求項5乃至8のいずれか一項に記載のディスプレイ装置。 - 前記層間絶縁膜上に形成された画素電極をさらに含み、
前記画素電極は、前記画素コンタクト孔を介して前記第2キャパシター電極と接触することを特徴とする、請求項9に記載のディスプレイ装置。 - 前記画素コンタクト孔は、前記キャパシターライン上に形成されることを特徴とする、請求項10に記載のディスプレイ装置。
- 前記層間絶縁膜は、有機物質を含むことを特徴とする、請求項9乃至11のうちいずれか一つに記載のディスプレイ装置。
- 前記半導体層と前記データ配線との間に配置されたエッチング防止膜をさらに含み、
前記エッチング防止膜は、前記半導体層の一部を各々露出するソースコンタクト孔及びドレインコンタクト孔を有し、
前記ソース電極及び前記ドレイン電極は、各々前記ソースコンタクト孔及び前記ドレインコンタクト孔を介して前記半導体層と接触することを特徴とする、請求項5乃至12のうちいずれか一つに記載のディスプレイ装置。 - 前記半導体層上で前記ソース電極及び前記ドレイン電極は互いに離隔し、
前記半導体層と前記ソース電極及び前記ドレイン電極とが互いに離隔した領域と前記半導体層との間に配置されたエッチング防止膜をさらに含むことを特徴とする、請求項5乃至12のうちいずれか一つに記載のディスプレイ装置。 - 前記半導体層は、酸化物半導体層であることを特徴とする、請求項1乃至14のうちいずれか一つに記載のディスプレイ装置。
- 前記半導体層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)、ハフニウム(Hf)、及び錫(Sn)のうちの一つ以上の元素と、酸素(O)とを含むことを特徴とする、請求項15に記載のディスプレイ装置。
- 基板を用意する段階、
前記基板上に第1透明導電膜及び第1金属膜を順次に積層した後にパターニングして、ゲート電極、第1キャパシター電極、及びキャパシターラインを含むゲート配線を形成する段階、
前記ゲート配線を覆うゲート絶縁膜を形成する段階、
前記ゲート絶縁膜上に前記ゲート電極と少なくとも一部が重なった半導体層を形成する段階、及び
前記半導体層及び前記ゲート絶縁膜上に第2透明導電膜及び第2金属膜を順次に積層した後にパターニングして、前記半導体層に各々接触するソース電極及びドレイン電極と、前記第1キャパシター電極と少なくとも一部が重なる第2キャパシター電極とを含むデータ配線を形成する段階、を含み、
ここで、前記ゲート配線は、前記第1透明導電膜及び前記第1金属膜を含む多重膜構造と、前記第1透明導電膜で形成された単一膜構造とを含むことを特徴とする、ディスプレイ装置の製造方法。 - 前記ゲート電極は、前記第1透明導電膜及び前記第1金属膜を含む多重膜で形成され、
前記第1キャパシター電極及び前記キャパシターラインは、前記第1透明導電膜で形成され、
前記ゲート電極、前記第1キャパシター電極、及び前記キャパシターラインは、一つのマスクを使用した写真エッチング工程によって共に形成されることを特徴とする、請求項17に記載のディスプレイ装置の製造方法。 - 前記ゲート電極及び前記キャパシターラインは、前記第1透明導電膜及び前記第1金属膜を含む多重膜で形成され、
前記第1キャパシター電極は、前記第1透明導電膜で形成され、
前記ゲート電極、前記キャパシターライン、及び前記第1キャパシター電極は、一つのマスクを使用した写真エッチング工程によって共に形成されることを特徴とする、請求項17に記載のディスプレイ装置の製造方法。 - 前記ソース電極及び前記ドレイン電極は、前記第2透明導電膜及び前記第2金属膜を含む多重膜で形成され、
前記第2キャパシター電極は、前記第2透明導電膜で形成され、
前記ソース電極、前記ドレイン電極、及び前記第2キャパシター電極は、一つのマスクを使用した写真エッチング工程によって共に形成されることを特徴とする、請求項17乃至19のうちのいずれか一つに記載のディスプレイ装置の製造方法。 - 前記第2キャパシター電極は、前記ドレイン電極の第2透明導電膜から延びることを特徴とする、請求項17乃至20のうちのいずれか一つに記載のディスプレイ装置の製造方法。
- 前記ソース電極及び前記ドレイン電極の少なくとも一部は前記半導体層上に形成され、
前記ソース電極及び前記ドレイン電極の前記第2透明導電膜は、各々前記ソース電極及び前記ドレイン電極の前記第2金属膜と前記半導体層との間で抵抗性接触層となることを特徴とする、請求項17乃至21のうちのいずれか一つに記載のディスプレイ装置の製造方法。 - 前記データ配線を覆う層間絶縁膜を形成する段階をさらに含み、
前記層間絶縁膜は、前記第2キャパシター電極の一部を露出する画素コンタクト孔を有することを特徴とする、請求項17乃至22のうちのいずれか一つに記載のディスプレイ装置の製造方法。 - 前記層間絶縁膜上に画素電極を形成する段階をさらに含み、
前記画素電極は、前記画素コンタクト孔を介して前記第2キャパシター電極と接触することを特徴とする、請求項23に記載のディスプレイ装置の製造方法。 - 前記画素コンタクト孔は、前記キャパシターライン上に形成されることを特徴とする、請求項24に記載のディスプレイ装置の製造方法。
- 前記層間絶縁膜は、有機物質を含むことを特徴とする、請求項23乃至25のうちのいずれか一つに記載のディスプレイ装置の製造方法。
- 前記半導体層は、酸化物半導体層であることを特徴とする、請求項17乃至26のうちのいずれか一つに記載のディスプレイ装置の製造方法。
- 前記半導体層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)、ハフニウム(Hf)、及び錫(Sn)のうちの一つ以上の元素と、酸素(O)とを含むことを特徴とする、請求項27に記載のディスプレイ装置の製造方法。
- 前記半導体層と前記データ配線との間にエッチング防止膜を形成する段階をさらに含み、
前記エッチング防止膜は、前記半導体層の一部を各々露出するソースコンタクト孔及びドレインコンタクト孔を有し、
前記ソース電極及び前記ドレイン電極は、各々前記ソースコンタクト孔及び前記ドレインコンタクト孔を介して前記半導体層と接触することを特徴とする、請求項17乃至28のうちのいずれか一つに記載のディスプレイ装置の製造方法。 - 前記半導体層上で前記ソース電極及び前記ドレイン電極は互いに離隔し、
前記半導体層と前記ソース電極及び前記ドレイン電極とが互いに離隔した領域と前記半導体層との間にエッチング防止膜を形成する段階をさらに含むことを特徴とする、請求項17乃至28のうちのいずれか一つに記載のディスプレイ装置の製造方法。
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9276126B2 (en) * | 2012-01-31 | 2016-03-01 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same |
JP6076626B2 (ja) * | 2012-06-14 | 2017-02-08 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
JP6155823B2 (ja) * | 2012-07-12 | 2017-07-05 | Jsr株式会社 | 有機el素子、感放射線性樹脂組成物および硬化膜 |
WO2014014039A1 (en) * | 2012-07-20 | 2014-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
JP2014199899A (ja) * | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN102881701B (zh) | 2012-09-19 | 2015-01-07 | 北京京东方光电科技有限公司 | 一种tft平板x射线传感器及其制造方法 |
CN103904086B (zh) * | 2012-12-24 | 2017-10-27 | 上海天马微电子有限公司 | 一种薄膜晶体管阵列基板 |
CN103199094B (zh) * | 2013-03-25 | 2016-01-20 | 南京中电熊猫液晶显示科技有限公司 | Tft-lcd阵列基板及其制造方法 |
KR102123529B1 (ko) * | 2013-03-28 | 2020-06-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US10008513B2 (en) * | 2013-09-05 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6315966B2 (ja) * | 2013-12-11 | 2018-04-25 | 三菱電機株式会社 | アクティブマトリックス基板およびその製造方法 |
TWI553379B (zh) | 2014-06-25 | 2016-10-11 | 群創光電股份有限公司 | 顯示面板和應用其之顯示裝置 |
JP2016048706A (ja) * | 2014-08-27 | 2016-04-07 | 三菱電機株式会社 | アレイ基板およびその製造方法 |
US9543370B2 (en) * | 2014-09-24 | 2017-01-10 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
CN104362155B (zh) * | 2014-11-24 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
US10249644B2 (en) * | 2015-02-13 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US9818344B2 (en) | 2015-12-04 | 2017-11-14 | Apple Inc. | Display with light-emitting diodes |
TWI625847B (zh) * | 2016-09-09 | 2018-06-01 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
KR20180045964A (ko) * | 2016-10-26 | 2018-05-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
US10756118B2 (en) | 2016-11-30 | 2020-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
KR102637791B1 (ko) * | 2018-02-13 | 2024-02-19 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102664769B1 (ko) | 2018-08-20 | 2024-05-08 | 엘지디스플레이 주식회사 | 표시장치 |
KR102654918B1 (ko) * | 2018-10-08 | 2024-04-05 | 삼성디스플레이 주식회사 | 표시장치 |
KR20200093100A (ko) * | 2019-01-25 | 2020-08-05 | 삼성디스플레이 주식회사 | 표시 장치용 도전선, 이를 포함하는 표시 장치, 및 이를 포함하는 표시 장치의 제조 방법 |
TWI807739B (zh) * | 2022-03-30 | 2023-07-01 | 友達光電股份有限公司 | 顯示面板及其製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2711003B2 (ja) * | 1989-12-25 | 1998-02-10 | 三菱電機株式会社 | マトリツクス型表示装置 |
JP3541026B2 (ja) * | 1995-08-11 | 2004-07-07 | シャープ株式会社 | 液晶表示装置、およびアクティブマトリクス基板 |
JP3269787B2 (ja) * | 1997-05-27 | 2002-04-02 | シャープ株式会社 | 液晶表示装置 |
JP2001339072A (ja) * | 2000-03-15 | 2001-12-07 | Advanced Display Inc | 液晶表示装置 |
JP2002116712A (ja) * | 2000-10-04 | 2002-04-19 | Advanced Display Inc | 表示装置および表示装置の製造方法 |
US7220611B2 (en) * | 2003-10-14 | 2007-05-22 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display panel and fabricating method thereof |
JPWO2005101476A1 (ja) * | 2004-04-16 | 2008-03-06 | 独立行政法人科学技術振興機構 | 半導体素子及び半導体素子の製造方法 |
WO2006064832A1 (ja) * | 2004-12-16 | 2006-06-22 | Sharp Kabushiki Kaisha | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、表示装置、液晶表示装置およびテレビジョン装置 |
KR101107269B1 (ko) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 수평 전계 박막 트랜지스터 기판 및 그 제조 방법과, 그를이용한 액정 패널 및 그 제조 방법 |
KR101107682B1 (ko) * | 2004-12-31 | 2012-01-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
KR20060079040A (ko) * | 2004-12-31 | 2006-07-05 | 엘지.필립스 엘시디 주식회사 | 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법 |
JP2006195098A (ja) * | 2005-01-12 | 2006-07-27 | Toshiba Matsushita Display Technology Co Ltd | マトリクスアレイ基板、その製造方法、及び平面表示装置 |
WO2007097078A1 (ja) * | 2006-02-24 | 2007-08-30 | Sharp Kabushiki Kaisha | アクティブマトリクス基板、表示装置、テレビジョン受像機 |
KR20070109192A (ko) * | 2006-05-10 | 2007-11-15 | 삼성전자주식회사 | 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 장치 |
KR101395282B1 (ko) * | 2006-12-04 | 2014-05-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조방법 |
KR101415561B1 (ko) | 2007-06-14 | 2014-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
CN100576045C (zh) * | 2007-08-31 | 2009-12-30 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
CN100521166C (zh) * | 2007-11-15 | 2009-07-29 | 友达光电股份有限公司 | 显示元件及其制造方法 |
KR101497425B1 (ko) * | 2008-08-28 | 2015-03-03 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP5514418B2 (ja) * | 2008-09-05 | 2014-06-04 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP4661935B2 (ja) * | 2008-10-15 | 2011-03-30 | ソニー株式会社 | 液晶表示装置 |
KR101627728B1 (ko) * | 2008-12-30 | 2016-06-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101034686B1 (ko) * | 2009-01-12 | 2011-05-16 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
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