JP5854183B2 - 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー - Google Patents
液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー Download PDFInfo
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- JP5854183B2 JP5854183B2 JP2011014619A JP2011014619A JP5854183B2 JP 5854183 B2 JP5854183 B2 JP 5854183B2 JP 2011014619 A JP2011014619 A JP 2011014619A JP 2011014619 A JP2011014619 A JP 2011014619A JP 5854183 B2 JP5854183 B2 JP 5854183B2
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- Prior art keywords
- piezoelectric
- piezoelectric layer
- liquid ejecting
- piezoelectric element
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910052697 platinum Inorganic materials 0.000 claims description 11
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- UKWUOTZGXIZAJC-UHFFFAOYSA-N 4-nitrosalicylic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1O UKWUOTZGXIZAJC-UHFFFAOYSA-N 0.000 description 1
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- JZUFKLXOESDKRF-UHFFFAOYSA-N Chlorothiazide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC2=C1NCNS2(=O)=O JZUFKLXOESDKRF-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- PQQAOTNUALRVTE-UHFFFAOYSA-L iron(2+);diformate Chemical compound [Fe+2].[O-]C=O.[O-]C=O PQQAOTNUALRVTE-UHFFFAOYSA-L 0.000 description 1
- FRVCGRDGKAINSV-UHFFFAOYSA-L iron(2+);octadecanoate Chemical compound [Fe+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O FRVCGRDGKAINSV-UHFFFAOYSA-L 0.000 description 1
- MVQMKWMKHHXUHG-UHFFFAOYSA-N iron(3+);propan-1-olate Chemical compound [Fe+3].CCC[O-].CCC[O-].CCC[O-] MVQMKWMKHHXUHG-UHFFFAOYSA-N 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
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- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
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- 239000003960 organic solvent Substances 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MYXUYXMJVQWRPU-UHFFFAOYSA-N triethoxybismuthane Chemical compound [Bi+3].CC[O-].CC[O-].CC[O-] MYXUYXMJVQWRPU-UHFFFAOYSA-N 0.000 description 1
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
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Description
かかる態様では、前記圧電体層は、膜厚が3μm以下であり、鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、(110)面に優先配向している圧電体層とすることにより、低鉛化、すなわち鉛含有量が低く且つ比誘電率が高い圧電体層を有する液体噴射ヘッドとなる。
図1は、本発明の実施形態1に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図及びそのA−A′線断面図である。
xBi(Fe1−a,Mna)O3−yBaTiO3 (1)
(0.60<x<1、0<y<0.40、好ましくは、0.70≦x≦0.80、0.20≦y≦0.30であり、x+y=1、0.01<a<0.10である。)
まず、シリコン基板の表面に熱酸化により膜厚400nmのSiO2膜を形成した。次に、SiO2膜上にRFスパッタ法により膜厚100nmのTiAlN膜を形成した。次に、TiAlN膜上にDCスパッタ法により膜厚100nmのIr膜及び膜厚30nmのIrO2膜を順に形成し、その上に蒸着法により(111)に配向したPt膜を形成し、第1電極60とした。
前駆体溶液にSiの化合物を添加せず、0.75Bi(Fe0.95Mn0.05)O3−0.25BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
Bi、Fe、Mn、Ba、Tiの金属化合物の混合割合を変更して、0.80Bi(Fe0.95Mn0.05)O3−0.20BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例2と同様にして、圧電素子300を形成した。
Bi、Fe、Mn、Ba、Tiの金属化合物の混合割合を変更して、0.70Bi(Fe0.95Mn0.05)O3−0.30BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例2と同様にして、圧電素子300を形成した。
Bi、Fe、Mn、Ba、Ti、Siの金属化合物の混合割合を変更して、0.60Bi(Fe0.95Mn0.05)O3−0.40BaTiO3のペロブスカイト型化合物と、このペロブスカイト型化合物に対して2モル%のSiO2とを有する圧電材料で構成された圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
オクチル酸鉄のかわりにトリス(アセチルアセトナト)鉄を用いた以外は実施例2と同様にして、圧電素子300を形成した。
実施例1〜4及び比較例1〜2の各圧電素子300について、東陽テクニカ社製「FCE−1A」で、φ=400μmの電極パターンを使用し、周波数1kHz、3V〜60Vの三角波を印加して、P(分極量)−V(電圧)の関係を求めた。実施例1のヒステリシスを図3に、実施例2のヒステリシスを図4に、実施例3のヒステリシスを図5に、実施例4のヒステリシスを図6、比較例1のヒステリシスを図7に、比較例2のヒステリシスを図8に示す。なお、図3〜図8に示すように、実施例1〜4及び比較例1〜2の圧電体層は強誘電体であった。
実施例1〜4及び比較例1〜2の圧電素子300の圧電体層70について、アジレント社製インピーダンスアナライザー「HP4294A」を用い1kHz、振幅141mVの条件で25℃〜300℃における比誘電率を測定した。結果を図9に示す。図9に示すように、実施例1〜4の圧電体層70は、比較例1〜2と比べて比誘電率が顕著に高く、比誘電率が320以上であった。具体的には、25℃での比誘電率は、図9に示すように、実施例1は370、実施例2は355、実施例3は325、実施例4は415であるのに対し、比較例1は205、比較例2は220であった。
実施例1〜4及び比較例1〜2の圧電素子について、Bruker AXS社製の「D8 Discover」を用い、X線源にCuKα線を使用し、室温で、圧電体層の粉末X線回折パターンをφ=ψ=0°で求めた。実施例1の結果を図10に、実施例2の結果を図11に、実施例3の結果を図12に、実施例4の結果を図13に、比較例1の結果を図14に、比較例2の結果を図15に示す。また、2次元検出画像の一例を、実施例1について図16に示す。
以上、本発明の一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、圧電特性を良好にする等のために、Ni、Co、Cr、Sc、V等をさらに有する圧電材料からなる圧電体層としてもよい。
Claims (7)
- 圧電体層と、前記圧電体層に設けられた電極とを具備する圧電素子を備えた液体噴射ヘッドであって、
前記電極は(111)面に配向している白金膜を含み、
前記圧電体層は、前記白金膜上に形成されたものであり、
鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、
自然配向した膜であり、(110)面に優先配向していることを特徴とする液体噴射ヘッド。 - 前記圧電体層は、SiO2をさらに含むことを特徴とする請求項1に記載する液体噴射ヘッド。
- 前記圧電体層は、前記ペロブスカイト型化合物に対して0.5モル%以上5モル%以下のSiO2を含むことを特徴とする請求項2に記載する液体噴射ヘッド。
- 請求項1〜3のいずれか一項に記載する液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 圧電体層と、前記圧電体層に設けられた電極とを具備する圧電素子であって、
前記電極は(111)面に配向している白金膜を含み、
前記圧電体層は、前記白金膜上に形成されたものであり、
鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、
自然配向した膜であり、(110)面に優先配向していることを特徴とする圧電素子。 - 請求項5に記載の圧電素子を具備することを特徴とする超音波センサー。
- 請求項5に記載の圧電素子を具備することを特徴とする赤外センサー。
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JP2011014619A JP5854183B2 (ja) | 2010-03-02 | 2011-01-26 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー |
EP11156108.0A EP2363902B1 (en) | 2010-03-02 | 2011-02-25 | Liquid ejection head, liquid ejection device, and piezoelectric element |
CN201110050716.9A CN102189794B (zh) | 2010-03-02 | 2011-03-01 | 液体喷射头、液体喷射装置以及压电元件 |
US13/037,631 US8641174B2 (en) | 2010-03-02 | 2011-03-01 | Liquid ejection head, liquid ejection device |
CN201510040800.0A CN104589800A (zh) | 2010-03-02 | 2011-03-01 | 液体喷射头、液体喷射装置以及压电元件 |
US14/100,262 US9211710B2 (en) | 2010-03-02 | 2013-12-09 | Liquid ejection head, liquid ejection device |
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2011
- 2011-01-26 JP JP2011014619A patent/JP5854183B2/ja not_active Expired - Fee Related
- 2011-02-25 EP EP11156108.0A patent/EP2363902B1/en not_active Not-in-force
- 2011-03-01 CN CN201510040800.0A patent/CN104589800A/zh active Pending
- 2011-03-01 CN CN201110050716.9A patent/CN102189794B/zh not_active Expired - Fee Related
- 2011-03-01 US US13/037,631 patent/US8641174B2/en not_active Expired - Fee Related
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CN102189794A (zh) | 2011-09-21 |
US20110216134A1 (en) | 2011-09-08 |
EP2363902A3 (en) | 2013-01-16 |
US20140092176A1 (en) | 2014-04-03 |
EP2363902A2 (en) | 2011-09-07 |
CN104589800A (zh) | 2015-05-06 |
EP2363902B1 (en) | 2016-05-11 |
JP2011205064A (ja) | 2011-10-13 |
US9211710B2 (en) | 2015-12-15 |
CN102189794B (zh) | 2015-07-08 |
US8641174B2 (en) | 2014-02-04 |
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