JP5754619B2 - 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー - Google Patents
液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー Download PDFInfo
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- JP5754619B2 JP5754619B2 JP2011015685A JP2011015685A JP5754619B2 JP 5754619 B2 JP5754619 B2 JP 5754619B2 JP 2011015685 A JP2011015685 A JP 2011015685A JP 2011015685 A JP2011015685 A JP 2011015685A JP 5754619 B2 JP5754619 B2 JP 5754619B2
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- 239000007788 liquid Substances 0.000 title claims description 36
- 150000001875 compounds Chemical class 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 31
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 25
- 229910052797 bismuth Inorganic materials 0.000 claims description 18
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 12
- 229910002113 barium titanate Inorganic materials 0.000 claims description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 10
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 claims description 9
- KTMLBHVBHVXWKQ-UHFFFAOYSA-N dibismuth dioxido(dioxo)manganese Chemical compound [Bi+3].[Bi+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O KTMLBHVBHVXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 44
- 239000010408 film Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 20
- 239000010936 titanium Substances 0.000 description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 17
- 239000011572 manganese Substances 0.000 description 16
- 229910052719 titanium Inorganic materials 0.000 description 15
- 229910052788 barium Inorganic materials 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 11
- 150000002736 metal compounds Chemical class 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- 238000004891 communication Methods 0.000 description 10
- 229910052748 manganese Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
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- 238000001035 drying Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- HKAASGNXFXHLHR-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] HKAASGNXFXHLHR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- ZCKXRHNLRWLPLJ-UHFFFAOYSA-N barium(2+);propan-1-olate Chemical compound [Ba+2].CCC[O-].CCC[O-] ZCKXRHNLRWLPLJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
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- 239000010931 gold Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- HYZQBNDRDQEWAN-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;manganese(3+) Chemical compound [Mn+3].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O HYZQBNDRDQEWAN-LNTINUHCSA-N 0.000 description 1
- WGOMEMWEJIKLSU-UJUIXPSJSA-J (z)-octadec-9-enoate;titanium(4+) Chemical compound [Ti+4].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O WGOMEMWEJIKLSU-UJUIXPSJSA-J 0.000 description 1
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- GEGLCBTXYBXOJA-UHFFFAOYSA-N 1-methoxyethanol Chemical compound COC(C)O GEGLCBTXYBXOJA-UHFFFAOYSA-N 0.000 description 1
- KKMOSYLWYLMHAL-UHFFFAOYSA-N 2-bromo-6-nitroaniline Chemical compound NC1=C(Br)C=CC=C1[N+]([O-])=O KKMOSYLWYLMHAL-UHFFFAOYSA-N 0.000 description 1
- UKWUOTZGXIZAJC-UHFFFAOYSA-N 4-nitrosalicylic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1O UKWUOTZGXIZAJC-UHFFFAOYSA-N 0.000 description 1
- OURWKHLDAVYMGO-UHFFFAOYSA-N 7-thiophen-2-ylpyrazolo[1,5-a]pyrimidine-3-carboxylic acid Chemical compound C=1C=NC2=C(C(=O)O)C=NN2C=1C1=CC=CS1 OURWKHLDAVYMGO-UHFFFAOYSA-N 0.000 description 1
- JZUFKLXOESDKRF-UHFFFAOYSA-N Chlorothiazide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC2=C1NCNS2(=O)=O JZUFKLXOESDKRF-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 1
- 229940112016 barium acetate Drugs 0.000 description 1
- 229940006612 barium citrate Drugs 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- GXUARMXARIJAFV-UHFFFAOYSA-L barium oxalate Chemical compound [Ba+2].[O-]C(=O)C([O-])=O GXUARMXARIJAFV-UHFFFAOYSA-L 0.000 description 1
- 229940094800 barium oxalate Drugs 0.000 description 1
- BHDOPTZJCSDVJE-CVBJKYQLSA-L barium(2+);(z)-octadec-9-enoate Chemical compound [Ba+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O BHDOPTZJCSDVJE-CVBJKYQLSA-L 0.000 description 1
- HQYOWPDUMCBSLQ-UHFFFAOYSA-L barium(2+);2,3-dihydroxybutanedioate Chemical compound [Ba+2].[O-]C(=O)C(O)C(O)C([O-])=O HQYOWPDUMCBSLQ-UHFFFAOYSA-L 0.000 description 1
- PAVWOHWZXOQYDB-UHFFFAOYSA-H barium(2+);2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PAVWOHWZXOQYDB-UHFFFAOYSA-H 0.000 description 1
- HLKMEIITONDPGG-UHFFFAOYSA-L barium(2+);2-hydroxypropanoate Chemical compound [Ba+2].CC(O)C([O-])=O.CC(O)C([O-])=O HLKMEIITONDPGG-UHFFFAOYSA-L 0.000 description 1
- SLPLCLDJTNLWPW-UHFFFAOYSA-N barium(2+);2-methylpropan-2-olate Chemical compound [Ba+2].CC(C)(C)[O-].CC(C)(C)[O-] SLPLCLDJTNLWPW-UHFFFAOYSA-N 0.000 description 1
- TVSNZOUKUFGNLK-UHFFFAOYSA-N barium(2+);butan-1-olate Chemical compound [Ba+2].CCCC[O-].CCCC[O-] TVSNZOUKUFGNLK-UHFFFAOYSA-N 0.000 description 1
- ZCOUZNWQYNAYNR-UHFFFAOYSA-N barium(2+);butan-2-olate Chemical compound [Ba+2].CCC(C)[O-].CCC(C)[O-] ZCOUZNWQYNAYNR-UHFFFAOYSA-N 0.000 description 1
- MJIAXOYYJWECDI-UHFFFAOYSA-L barium(2+);dibenzoate Chemical compound [Ba+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 MJIAXOYYJWECDI-UHFFFAOYSA-L 0.000 description 1
- UXFOSWFWQAUFFZ-UHFFFAOYSA-L barium(2+);diformate Chemical compound [Ba+2].[O-]C=O.[O-]C=O UXFOSWFWQAUFFZ-UHFFFAOYSA-L 0.000 description 1
- LKZCRGABYQYUFX-UHFFFAOYSA-L barium(2+);dithiocyanate Chemical compound [Ba+2].[S-]C#N.[S-]C#N LKZCRGABYQYUFX-UHFFFAOYSA-L 0.000 description 1
- GYIWFHXWLCXGQO-UHFFFAOYSA-N barium(2+);ethanolate Chemical compound [Ba+2].CC[O-].CC[O-] GYIWFHXWLCXGQO-UHFFFAOYSA-N 0.000 description 1
- BQDSDRAVKYTTTH-UHFFFAOYSA-N barium(2+);methanolate Chemical compound [Ba+2].[O-]C.[O-]C BQDSDRAVKYTTTH-UHFFFAOYSA-N 0.000 description 1
- PJUKKJYOSBWEQO-UHFFFAOYSA-L barium(2+);octanoate Chemical compound [Ba+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O PJUKKJYOSBWEQO-UHFFFAOYSA-L 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- IZRTVYMPRPTBAI-UHFFFAOYSA-K dibenzoyloxybismuthanyl benzoate Chemical compound [Bi+3].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 IZRTVYMPRPTBAI-UHFFFAOYSA-K 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- ZFSQRSOTOXERMJ-UHFFFAOYSA-N ethanol;iron Chemical compound [Fe].CCO.CCO.CCO ZFSQRSOTOXERMJ-UHFFFAOYSA-N 0.000 description 1
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- PQQAOTNUALRVTE-UHFFFAOYSA-L iron(2+);diformate Chemical compound [Fe+2].[O-]C=O.[O-]C=O PQQAOTNUALRVTE-UHFFFAOYSA-L 0.000 description 1
- FRVCGRDGKAINSV-UHFFFAOYSA-L iron(2+);octadecanoate Chemical compound [Fe+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O FRVCGRDGKAINSV-UHFFFAOYSA-L 0.000 description 1
- MVQMKWMKHHXUHG-UHFFFAOYSA-N iron(3+);propan-1-olate Chemical compound [Fe+3].CCC[O-].CCC[O-].CCC[O-] MVQMKWMKHHXUHG-UHFFFAOYSA-N 0.000 description 1
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- SGLXWMAOOWXVAM-UHFFFAOYSA-L manganese(2+);octanoate Chemical compound [Mn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O SGLXWMAOOWXVAM-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- MYXUYXMJVQWRPU-UHFFFAOYSA-N triethoxybismuthane Chemical compound [Bi+3].CC[O-].CC[O-].CC[O-] MYXUYXMJVQWRPU-UHFFFAOYSA-N 0.000 description 1
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 description 1
- DRFVTYUXJVLNLR-UHFFFAOYSA-N tris(2-methylbutan-2-yloxy)bismuthane Chemical compound CCC(C)(C)O[Bi](OC(C)(C)CC)OC(C)(C)CC DRFVTYUXJVLNLR-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
かかる態様では、ペロブスカイト構造を有する鉄酸マンガン酸ビスマスとSiO2とを含む圧電材料を圧電体層とすることにより、低鉛化、すなわち鉛含有量が低く且つ絶縁性に優れた圧電素子を有する液体噴射ヘッドとなる。
図1は、本発明の実施形態1に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図及びそのA−A′線断面図である。
x[Bi(Fe1−a,Mna)]O3−y[BaTiO3] (1)
(0.60≦x≦1、0≦y≦0.40、x+y=1、0.01<a<0.10)
まず、シリコン基板の表面に熱酸化により膜厚400nmのSiO2膜を形成した。次に、SiO2膜上にRFスパッタ法により膜厚100nmのTiAlN膜を形成した。次に、TiAlN膜上にDCスパッタ法により膜厚100nmのIr膜及び膜厚30nmのIrO2膜を順に形成し、その上に蒸着法により(111)に配向したPt膜を形成し、第1電極60とした。
Bi、Fe、Mn、Ba、Ti、Siの金属化合物の混合割合を変更して、0.60Bi(Fe0.95Mn0.05)O3−0.40BaTiO3のペロブスカイト型化合物と、このペロブスカイト型化合物に対して2モル%のSiO2とを有する圧電材料で構成された圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
前駆体溶液にSiの化合物を添加せず、0.75Bi(Fe0.95Mn0.05)O3−0.25BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
実施例1〜2及び比較例1の各圧電素子300について、東陽テクニカ社製「FCE−1A」で、φ=400μmの電極パターンを使用し、周波数1kHz、3V〜60Vの三角波を印加して、P(分極量)−V(電圧)の関係を求めた。実施例1のヒステリシスを図3に、また、実施例2のヒステリシスを図4に、また、比較例1のヒステリシスを図5に示す。なお、図3〜図5に示すように、実施例1〜2及び比較例1の圧電体層は強誘電体であった。
実施例1〜2の圧電素子300の圧電体層70について、アジレント社製インピーダンスアナライザー「HP4294A」を用い1kHz、振幅141mVの条件で25℃〜300℃における比誘電率を測定した。結果を図6に示す。図6に示すように、実施例1及び実施例2の圧電体層70は、比誘電率が200以上であった。
実施例1〜2及び比較例1の圧電素子について、Bruker AXS社製の「D8 Discover」を用い、X線源にCuKα線を使用し、室温で、圧電体層の粉末X線回折パターンをφ=ψ=0°で求めた。その結果、全ての実施例1〜2及び比較例1において、図7〜9に示すようにペロブスカイト型構造(ABO3型構造)を形成していた。
以上、本発明の一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、圧電特性を良好にする等のために、Ni、Co、Cr、Sc、V等をさらに有する圧電材料からなる圧電体層としてもよい。
Claims (7)
- 圧電体層と、前記圧電体層に設けられた電極とを具備する圧電素子を備えた液体噴射ヘッドであって、
前記圧電体層は、ペロブスカイト構造を有する鉄酸マンガン酸ビスマスを主成分とするペロブスカイト型化合物及びSiO2を含む圧電材料からなり、
前記圧電体層は前記ペロブスカイト型化合物に対して0.5モル%以上5モル%以下のSiO 2 を含むことを特徴とする液体噴射ヘッド。 - 前記ペロブスカイト型化合物は、チタン酸バリウムをさらに含むことを特徴とする請求項1に記載する液体噴射ヘッド。
- 前記ペロブスカイト型化合物は60モル%以上の鉄酸マンガン酸ビスマスを含むことを特徴とする請求項1または2に記載する液体噴射ヘッド。
- 請求項3に記載する液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 圧電体層と、前記圧電体層に設けられた電極とを具備する圧電素子であって、
前記圧電体層は、ペロブスカイト構造を有する鉄酸マンガン酸ビスマスを主成分とするペロブスカイト型化合物及びSiO2を含む圧電材料からなることを特徴とする圧電素子。 - 請求項5に記載の圧電素子を具備することを特徴とする超音波センサー。
- 請求項5に記載の圧電素子を具備することを特徴とする赤外センサー。
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CN201110049735.XA CN102189793B (zh) | 2010-03-02 | 2011-02-28 | 液体喷射头、液体喷射装置以及压电元件 |
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