WO2008111274A1 - 半導体基板上の積層構造 - Google Patents

半導体基板上の積層構造 Download PDF

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WO2008111274A1
WO2008111274A1 PCT/JP2007/073922 JP2007073922W WO2008111274A1 WO 2008111274 A1 WO2008111274 A1 WO 2008111274A1 JP 2007073922 W JP2007073922 W JP 2007073922W WO 2008111274 A1 WO2008111274 A1 WO 2008111274A1
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film
superimposed
single crystal
semiconductor substrate
thin film
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PCT/JP2007/073922
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English (en)
French (fr)
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Makoto Ishida
Kazuaki Sawada
Daisuke Akai
Mikinori Ito
Mikito Otonari
Kenro Kikuchi
Yiping Guo
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National University Corporation Toyohashi University Of Technology
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Priority claimed from JP2007066393A external-priority patent/JP5228188B2/ja
Priority claimed from JP2007152277A external-priority patent/JP5228158B2/ja
Application filed by National University Corporation Toyohashi University Of Technology filed Critical National University Corporation Toyohashi University Of Technology
Priority to US12/450,182 priority Critical patent/US8183594B2/en
Publication of WO2008111274A1 publication Critical patent/WO2008111274A1/ja

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Abstract

シリコン基板上にバッファ層としてγ－Ａｌ２Ｏ３単結晶膜を用いることにより、優れた特性の強誘電体素子を得ることを目的とする。 ＭＦＭＩＳ構造薄膜２の最下層のシリコン基板４上には、γ－Ａｌ２Ｏ３単結晶膜６が形成されている。γ－Ａｌ２Ｏ３単結晶膜６の直上には、酸化物導電体であるＬａＮｉＯ３膜８が下部電極として形成されている。ＬａＮｉＯ３膜８の直上には、強誘電体材料であるＰＺＴ薄膜１０が形成されている。ＰＺＴ薄膜１０の上面には、上部電極であるＰｔ層１２が形成されている。
PCT/JP2007/073922 2007-03-15 2007-12-12 半導体基板上の積層構造 WO2008111274A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/450,182 US8183594B2 (en) 2007-03-15 2007-12-12 Laminar structure on a semiconductor substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-066393 2007-03-15
JP2007066393A JP5228188B2 (ja) 2007-03-15 2007-03-15 半導体基板上の積層構造
JP2007-152277 2007-06-08
JP2007152277A JP5228158B2 (ja) 2007-06-08 2007-06-08 半導体基板上の積層構造

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WO2008111274A1 true WO2008111274A1 (ja) 2008-09-18

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CN103360065A (zh) * 2012-03-30 2013-10-23 三菱综合材料株式会社 Pzt系铁电薄膜及其制造方法
JP2015032587A (ja) * 2013-07-31 2015-02-16 株式会社デンソー 圧電素子およびその製造方法
US9559295B2 (en) 2011-09-19 2017-01-31 Institute Of Physics, Chinese Academy Of Sciences Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
CN110581217A (zh) * 2019-09-06 2019-12-17 河北师范大学 在单晶硅基片上外延生长制备双层钙钛矿锰氧化物薄膜的方法

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JP5854184B2 (ja) * 2010-03-02 2016-02-09 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5754619B2 (ja) * 2010-03-02 2015-07-29 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5716897B2 (ja) * 2010-03-02 2015-05-13 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5854183B2 (ja) 2010-03-02 2016-02-09 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5839157B2 (ja) * 2010-03-02 2016-01-06 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
EP2677558B1 (en) 2011-02-18 2017-03-29 Panasonic Intellectual Property Management Co., Ltd. Piezoelectric element
US9646766B2 (en) * 2012-06-14 2017-05-09 Uchicago Argonne, Llc Method of making dielectric capacitors with increased dielectric breakdown strength
US8623747B1 (en) * 2012-12-17 2014-01-07 Translucent, Inc. Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices
WO2015194452A1 (ja) * 2014-06-20 2015-12-23 株式会社アルバック 多層膜及びその製造方法
DE102016015010A1 (de) * 2016-12-14 2018-06-14 Namlab Ggmbh Integrierte Schaltung, die eine ferroelektrische Speicherzelle enthält, und ein Herstellungsverfahren dafür
US11289642B2 (en) * 2017-09-06 2022-03-29 Rohm Co., Ltd. Piezoelectric element
KR102645021B1 (ko) * 2019-03-06 2024-03-06 삼성전자주식회사 반도체 장치
DE102019127924B3 (de) * 2019-10-16 2021-01-21 Tdk Electronics Ag Bauelement und Verfahren zur Herstellung eines Bauelements
KR102590568B1 (ko) * 2021-07-06 2023-10-18 한국과학기술연구원 이종 접합 반도체 기판, 그의 제조방법 및 그를 이용한 전자소자

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JPH1027886A (ja) * 1996-07-09 1998-01-27 Hitachi Ltd 高誘電体素子とその製造方法
JPH1153935A (ja) * 1997-08-06 1999-02-26 Fujitsu Ltd Ｌｓｒｏ薄膜およびその製造方法
WO2004061881A1 (ja) * 2002-12-27 2004-07-22 Tdk Corporation 薄膜コンデンサおよびその製造方法
JP2007043095A (ja) * 2005-07-08 2007-02-15 Seiko Epson Corp アクチュエータ装置、液体噴射ヘッド及び液体噴射装置

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US9559295B2 (en) 2011-09-19 2017-01-31 Institute Of Physics, Chinese Academy Of Sciences Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
CN103360065A (zh) * 2012-03-30 2013-10-23 三菱综合材料株式会社 Pzt系铁电薄膜及其制造方法
JP2015032587A (ja) * 2013-07-31 2015-02-16 株式会社デンソー 圧電素子およびその製造方法
CN110581217A (zh) * 2019-09-06 2019-12-17 河北师范大学 在单晶硅基片上外延生长制备双层钙钛矿锰氧化物薄膜的方法
CN110581217B (zh) * 2019-09-06 2023-04-18 河北师范大学 在单晶硅基片上外延生长制备双层钙钛矿锰氧化物薄膜的方法

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