JP5850873B2 - 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 - Google Patents

感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 Download PDF

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JP5850873B2
JP5850873B2 JP2013054400A JP2013054400A JP5850873B2 JP 5850873 B2 JP5850873 B2 JP 5850873B2 JP 2013054400 A JP2013054400 A JP 2013054400A JP 2013054400 A JP2013054400 A JP 2013054400A JP 5850873 B2 JP5850873 B2 JP 5850873B2
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group
general formula
repeating unit
sensitive
resin
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JP2014041327A5 (OSRAM
JP2014041327A (ja
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滝沢　裕雄
裕雄 滝沢
修史 平野
修史 平野
夏海 横川
夏海 横川
亘 二橋
亘 二橋
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Fujifilm Corp
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Priority to JP2013054400A priority Critical patent/JP5850873B2/ja
Priority to PCT/JP2013/070833 priority patent/WO2014017667A1/en
Priority to KR1020157002291A priority patent/KR101776048B1/ko
Priority to TW102126777A priority patent/TWI587086B/zh
Publication of JP2014041327A publication Critical patent/JP2014041327A/ja
Priority to US14/605,631 priority patent/US9551933B2/en
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JP2013054400A 2012-07-27 2013-03-15 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 Active JP5850873B2 (ja)

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Application Number Priority Date Filing Date Title
JP2013054400A JP5850873B2 (ja) 2012-07-27 2013-03-15 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
PCT/JP2013/070833 WO2014017667A1 (en) 2012-07-27 2013-07-25 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device
KR1020157002291A KR101776048B1 (ko) 2012-07-27 2013-07-25 감활성광선성 또는 감방사선성 수지 조성물, 그것을 사용한 레지스트 막, 패턴형성방법, 전자 디바이스의 제조방법, 및 전자 디바이스
TW102126777A TWI587086B (zh) 2012-07-27 2013-07-26 感光化射線性或感放射線性樹脂組成物、使用其的抗蝕劑膜、圖案形成方法、電子元件的製造方法及電子元件
US14/605,631 US9551933B2 (en) 2012-07-27 2015-01-26 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device

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