JP5844956B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5844956B2
JP5844956B2 JP2009052476A JP2009052476A JP5844956B2 JP 5844956 B2 JP5844956 B2 JP 5844956B2 JP 2009052476 A JP2009052476 A JP 2009052476A JP 2009052476 A JP2009052476 A JP 2009052476A JP 5844956 B2 JP5844956 B2 JP 5844956B2
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JP
Japan
Prior art keywords
electrode
type
gate
semiconductor substrate
layer
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JP2009052476A
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English (en)
Japanese (ja)
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JP2010206100A5 (enExample
JP2010206100A (ja
Inventor
小野瀬　秀勝
秀勝 小野瀬
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009052476A priority Critical patent/JP5844956B2/ja
Priority to US12/715,466 priority patent/US8227831B2/en
Publication of JP2010206100A publication Critical patent/JP2010206100A/ja
Publication of JP2010206100A5 publication Critical patent/JP2010206100A5/ja
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Publication of JP5844956B2 publication Critical patent/JP5844956B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009052476A 2009-03-05 2009-03-05 半導体装置 Active JP5844956B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009052476A JP5844956B2 (ja) 2009-03-05 2009-03-05 半導体装置
US12/715,466 US8227831B2 (en) 2009-03-05 2010-03-02 Semiconductor device having a junction FET and a MISFET for control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009052476A JP5844956B2 (ja) 2009-03-05 2009-03-05 半導体装置

Publications (3)

Publication Number Publication Date
JP2010206100A JP2010206100A (ja) 2010-09-16
JP2010206100A5 JP2010206100A5 (enExample) 2012-04-12
JP5844956B2 true JP5844956B2 (ja) 2016-01-20

Family

ID=42677439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009052476A Active JP5844956B2 (ja) 2009-03-05 2009-03-05 半導体装置

Country Status (2)

Country Link
US (1) US8227831B2 (enExample)
JP (1) JP5844956B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5844956B2 (ja) * 2009-03-05 2016-01-20 ルネサスエレクトロニクス株式会社 半導体装置
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置
US8476733B2 (en) * 2009-11-17 2013-07-02 Panasonic Corporation Semiconductor element and manufacturing method therefor
US9362905B2 (en) * 2011-03-21 2016-06-07 Infineon Technologies Americas Corp. Composite semiconductor device with turn-on prevention control
US9859882B2 (en) 2011-03-21 2018-01-02 Infineon Technologies Americas Corp. High voltage composite semiconductor device with protection for a low voltage device
JP5743739B2 (ja) 2011-06-22 2015-07-01 株式会社東芝 蓄電装置
JP5777439B2 (ja) 2011-07-29 2015-09-09 株式会社東芝 蓄電システム
CN103843122B (zh) * 2011-09-30 2017-04-05 瑞萨电子株式会社 半导体器件
US8790966B2 (en) * 2011-10-18 2014-07-29 Globalfoundries Singapore Pte. Ltd. High voltage device
JP2013219306A (ja) * 2012-04-12 2013-10-24 Advanced Power Device Research Association 半導体ダイオード装置
JP6542174B2 (ja) * 2016-09-21 2019-07-10 株式会社東芝 半導体装置及び半導体装置の制御方法
DE102017110508B4 (de) * 2017-05-15 2023-03-02 Infineon Technologies Ag Halbleitervorrichtung mit Transistorzellen und einer Driftstruktur und Herstellungsverfahren
JP7211393B2 (ja) * 2020-04-22 2023-01-24 株式会社デンソー 半導体装置
JP7528749B2 (ja) 2020-05-29 2024-08-06 富士電機株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186053A (ja) * 1984-03-06 1985-09-21 Seiko Epson Corp 薄膜相補型ｍｏｓ回路
JPH10261807A (ja) * 1997-03-19 1998-09-29 Citizen Watch Co Ltd 半導体ダイオード
US6054752A (en) * 1997-06-30 2000-04-25 Denso Corporation Semiconductor device
US7235862B2 (en) * 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
JP2003142684A (ja) * 2001-11-02 2003-05-16 Toshiba Corp 半導体素子及び半導体装置
JP2003243670A (ja) * 2002-02-13 2003-08-29 Mitsubishi Electric Corp 半導体装置
DE102005053487B4 (de) * 2005-11-09 2011-06-09 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit
JP5369388B2 (ja) * 2007-05-23 2013-12-18 三菱電機株式会社 半導体装置
JP5271515B2 (ja) * 2007-07-13 2013-08-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5324157B2 (ja) * 2008-08-04 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5844956B2 (ja) * 2009-03-05 2016-01-20 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20100224885A1 (en) 2010-09-09
JP2010206100A (ja) 2010-09-16
US8227831B2 (en) 2012-07-24

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