JP6273020B2 - 半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両 - Google Patents
半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 214
- 238000006243 chemical reaction Methods 0.000 title claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 100
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 57
- 239000012535 impurity Substances 0.000 claims description 33
- 239000010410 layer Substances 0.000 description 109
- 210000000746 body region Anatomy 0.000 description 82
- 229910052751 metal Inorganic materials 0.000 description 40
- 239000002184 metal Substances 0.000 description 40
- 230000015556 catabolic process Effects 0.000 description 37
- 238000000034 method Methods 0.000 description 24
- 238000000605 extraction Methods 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000013256 coordination polymer Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000002161 passivation Methods 0.000 description 10
- 230000002441 reversible effect Effects 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001360 synchronised effect Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Description
以下、本実施の形態の半導体装置である半導体チップの構造について、図1〜図5を用いて説明する。図1は、本実施の形態の半導体装置である半導体チップの平面図である。図2は、図1において破線で囲んだ領域を拡大して示す平面図である。図3は、図2のA−A線における断面図である。図4は、図2のB−B線における断面図である。図5は、本実施の形態の半導体装置の効果を説明するために示す断面図である。
本実施の形態では、前記実施の形態1に比べて、抜き取り領域のレイアウトが異なる半導体装置について説明する。
本実施の形態では、前記実施の形態1または前記実施の形態2のSiCパワー素子を備えた電力変換装置について説明する。図17は、本実施の形態の電力変換装置(インバータ)の回路図である。
本実施の形態では、前記実施の形態1または前記実施の形態2の半導体装置に形成されたSiCパワーMISFETを備える電力変換装置を説明する。図18は、本実施の形態の電力変換装置(インバータ)を示す回路図である。
前記実施の形態3または前記実施の形態4で説明した3相モータシステムは、ハイブリット自動車、電気自動車、燃料電池自動車などの自動車に用いることができる。本実施の形態では、3相モータシステムを搭載した自動車を、図19および図20を用いて説明する。図19は、本実施の形態の電気自動車の構成を示す概略図である。図20は、本実施の形態の昇圧コンバータの回路図である。
前記実施の形態3および前記実施の形態4の3相モータシステムは、鉄道車両に用いることができる。本実施の形態では、3相モータシステムを用いた鉄道車両を図21を用いて説明する。図21は、本実施の形態の鉄道車両のコンバータおよびインバータを含む回路図である。
1B 終端領域
1 SiC基板
2 エピタキシャル層
3 ドレイン領域
4、5 ボディ領域
6 FLR
7、8 ソース領域
9、10 電位固定領域
11 ゲート絶縁膜
12、13 ゲート電極
14 層間絶縁膜
15 金属膜
16 パッシベーション膜
17 ドレイン電極
18 抜き取り領域
19 電界緩和領域
21 ユニットセル
22〜24 マスク
301、401 負荷
302、402 パワーモジュール
303、403 制御回路
304、404、514 SiCパワーMISFET
305 ダイオード
306〜312、405〜411 端子
501a、501b 駆動輪
502 駆動軸
503 3相モータ
504、513 インバータ
505 バッテリ
506、507 電力ライン
508 昇圧コンバータ
509 リレー
510 電子制御ユニット
511 リアクトル
512 平滑用コンデンサ
601 負荷
602 インバータ
604 SiCパワーMISFET
607 コンバータ
608 キャパシタ
609 トランス
CP 半導体チップ
GP ゲートパッド
OW 架線
PG パンタグラフ
RT 線路
SP ソースパッド
WH 車輪
Claims (8)
- 第1不純物濃度を有する第1導電型の半導体基板と、
前記半導体基板の主面の反対の裏面側に形成された裏面電極と、
前記半導体基板の前記主面上に形成された、前記第1不純物濃度よりも低い第2不純物濃度を有する前記第1導電型の半導体層と、
前記半導体層上に形成された、第2導電型の第1領域と、
前記第1領域に挟まれた前記半導体層の一部である半導体素子領域に位置する前記第1導電型の第2領域と、
複数存在する前記第2領域の中で、最外周に形成された前記第2領域よりさらに外周の終端領域に形成された、前記第2導電型の第3領域と、
前記第3領域中に形成された、ソース電極と電気的に接続された前記第1導電型の第4領域と、
前記第3領域および前記第4領域のそれぞれと平面視で重なり、前記半導体層上にゲート絶縁膜を介して形成されたゲート電極と、
平面視において、前記第4領域に対して前記半導体基板の端部側の領域を除き、前記第4領域を囲むように前記半導体層の上面に形成された前記第2導電型の第5領域と、
を有し、
前記第5領域は、前記第1領域よりも不純物濃度が高く、前記ソース電極に電気的に接続されている、半導体装置。 - 請求項1に記載の半導体装置において、
前記ゲート電極は、前記第4領域に対して前記半導体基板の端部側に設けられており、
前記第5領域は、前記ゲート電極の直下に、前記第4領域に隣接して形成されている、半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体基板および前記半導体層は、炭化ケイ素を含む、半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体素子領域に形成された半導体素子は、前記ソース電極と接続されているMOSFETであり、
前記裏面電極はドレイン電極である、半導体装置。 - 請求項4に記載の半導体装置と、
前記ソース電極に接続されている第1端子と、
前記ドレイン電極に接続されている第2端子と、
を有する、パワーモジュール。 - 請求項5に記載のパワーモジュールを有し、
前記第1端子と前記第2端子間に印加される電力を変換する、電力変換装置。 - 請求項6に記載の電力変換装置の出力をモータに供給し、前記モータで車輪を駆動する、自動車。
- 請求項6に記載の電力変換装置の出力をモータに供給し、前記モータで車輪を駆動する、鉄道車両。
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