JP5841338B2 - マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置 - Google Patents
マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置 Download PDFInfo
- Publication number
- JP5841338B2 JP5841338B2 JP2011040334A JP2011040334A JP5841338B2 JP 5841338 B2 JP5841338 B2 JP 5841338B2 JP 2011040334 A JP2011040334 A JP 2011040334A JP 2011040334 A JP2011040334 A JP 2011040334A JP 5841338 B2 JP5841338 B2 JP 5841338B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting cells
- cell
- cells
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 144
- 230000002950 deficient Effects 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 69
- 210000004027 cell Anatomy 0.000 description 331
- 238000000034 method Methods 0.000 description 31
- 230000008569 process Effects 0.000 description 25
- 238000000926 separation method Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Description
前記複数の発光セルは、それぞれ2以上の発光セルを有する複数の列に配列され、前記複数の連結部は、前記複数の列の各々の一端に位置する発光セルの第1導電型半導体層に連結された第1連結部と、前記複数の列の各々の他端に位置する発光セルの第2導電型半導体層に連結された第2連結部と、前記複数の列の各々に属する発光セルが前記第1連結部及び前記第2連結部の間で相互直列に連結されるように形成された複数の相互連結部と、前記複数の列のうち少なくとも一部の列の相互連結部を行方向に沿って連結するように形成された中間連結部と、を含み、
前記基板上に直接配置され、前記第1連結部に沿って離隔されるように配列された複数の第1ボンディングパッドと、
前記基板上に直接配置され、前記第2連結部に沿って離隔されるように配列された複数の第2ボンディングパッドと、をさらに含むことを特徴とする半導体発光装置を提供する。
前記複数の発光セルは、M個の行とN個の列(ここで、M、Nは4以上の整数)に配列され、前記列の各々に位置するM個の発光セルは、それぞれ相互直列に連結された2以上の発光セルを有する複数のグループに区分され、前記複数のグループの発光セルは、隣接する他のグループの発光セルと同一極性の電極が対向するように形成され、前記複数の連結部は、前記複数のグループの各々の一端に位置する発光セルの第1導電型半導体層に連結された複数の第1連結部と、前記複数のグループの各々の他端に位置する発光セルの第2導電型半導体層に連結された複数の第2連結部と、前記複数のグループの発光セルを相互直列に連結する直列連結用相互連結部とを含み、
前記基板上に直接配置され、前記複数の第1連結部に連結された延長部に沿って離隔されるように配列された複数の第1ボンディングパッドと、
前記基板上に直接配置され、前記複数の第2連結部に連結された延長部に沿って離隔されるように配列された複数の第2ボンディングパッドと、をさらに含むことを特徴とする半導体発光装置を提供する。
上記複数の発光セルには少なくとも1つの不良発光セルCoが含まれているとする。本実施形態では、図1に図示されたように、他の発光セルCの連結回路から排除されるよう、不良発光セルと接続する連結部を切断させることによってチップ全体を不良処理することなく使用できる。より具体的には、不良発光セルCoの第2導電型半導体層12bと連結される連結部を切断し、第2ボンディングパッド19bと不良発光セルCoとの電気的な接続を切断することで、不良発光セルCoに電流が流れないようにする。不良発光セルCoを排除させるための連結部の切断は連結部(特に、相互連結部)を構成する電極ラインの一部を除去することで実現できる。
Claims (4)
- 基板と、
それぞれが、前記基板の上面に順に形成された第1導電型半導体層、活性層及び第2導電型半導体層を有し、前記基板の上面に位置する複数の発光セルと、
前記複数の発光セルが直列と並列との組み合わせで連結されるよう前記複数の発光セルが形成された基板上に形成された複数の連結部と、
前記複数の連結部と前記複数の発光セルとの所望しない接続が防止されるよう前記複数の発光セルの表面に形成された絶縁層と、
を含み、
前記複数の発光セルは、M個の行とN個の列(ここで、M、Nは4以上の整数)に配列され、
前記列の各々に位置するM個の発光セルは、それぞれ相互直列に連結された2以上の発光セルを有する複数のグループに区分され、前記複数のグループの発光セルは、隣接する他のグループの発光セルと同一極性の電極が対向するように形成され、
前記複数の連結部は、前記複数のグループの各々の一端に位置する発光セルの第1導電型半導体層に連結された複数の第1連結部と、前記複数のグループの各々の他端に位置する発光セルの第2導電型半導体層に連結された複数の第2連結部と、前記複数のグループの発光セルを相互直列に連結する直列連結用相互連結部とを含み、
前記基板上に直接配置され、前記複数の第1連結部に連結された延長部に沿って離隔されるように配列された複数の第1ボンディングパッドと、
前記基板上に直接配置され、前記複数の第2連結部に連結された延長部に沿って離隔されるように配列された複数の第2ボンディングパッドと、をさらに含むことを特徴とする半導体発光装置。
- 前記複数の発光セルは、少なくとも1つの不良発光セルを含み、前記不良発光セルと接続する連結部のうち少なくとも1つが切断されたことを特徴とする請求項1に記載の半導体発光装置。
- 請求項1又は2に記載された少なくとも1つの半導体発光装置を含む発光モジュール。
- 請求項1又は2に記載された少なくとも1つの半導体発光装置を含む照明装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0018277 | 2010-02-27 | ||
KR1020100018277A KR101665932B1 (ko) | 2010-02-27 | 2010-02-27 | 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011181925A JP2011181925A (ja) | 2011-09-15 |
JP2011181925A5 JP2011181925A5 (ja) | 2014-04-17 |
JP5841338B2 true JP5841338B2 (ja) | 2016-01-13 |
Family
ID=44148802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011040334A Active JP5841338B2 (ja) | 2010-02-27 | 2011-02-25 | マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8884318B2 (ja) |
EP (1) | EP2362420B1 (ja) |
JP (1) | JP5841338B2 (ja) |
KR (1) | KR101665932B1 (ja) |
CN (1) | CN102169941B (ja) |
TW (1) | TWI488340B (ja) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9236532B2 (en) * | 2009-12-14 | 2016-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode having electrode pads |
KR101926358B1 (ko) | 2012-02-17 | 2018-12-07 | 삼성전자주식회사 | 반도체 발광장치 및 조명장치 |
JP5992695B2 (ja) | 2012-02-29 | 2016-09-14 | スタンレー電気株式会社 | 半導体発光素子アレイ及び車両用灯具 |
CN103311420B (zh) * | 2012-03-06 | 2017-04-12 | 三星电子株式会社 | 具有多单元阵列的半导体发光器件 |
JP5939055B2 (ja) * | 2012-06-28 | 2016-06-22 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
CN102750911B (zh) * | 2012-07-10 | 2015-11-25 | 深圳市华星光电技术有限公司 | 一种led背光驱动电路、背光模组和液晶显示装置 |
US9171826B2 (en) * | 2012-09-04 | 2015-10-27 | Micron Technology, Inc. | High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods |
KR101956101B1 (ko) * | 2012-09-06 | 2019-03-11 | 엘지이노텍 주식회사 | 발광소자 |
JP6083194B2 (ja) * | 2012-11-06 | 2017-02-22 | 富士ゼロックス株式会社 | 面発光型半導体レーザアレイ装置、光源および光源モジュール |
KR20140059985A (ko) * | 2012-11-09 | 2014-05-19 | 엘지이노텍 주식회사 | 발광소자 |
CN107768399B (zh) | 2012-12-21 | 2022-02-18 | 首尔伟傲世有限公司 | 发光二极管 |
US9356212B2 (en) | 2012-12-21 | 2016-05-31 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
KR102087935B1 (ko) * | 2012-12-27 | 2020-03-11 | 엘지이노텍 주식회사 | 발광 소자 |
JP6176032B2 (ja) * | 2013-01-30 | 2017-08-09 | 日亜化学工業株式会社 | 半導体発光素子 |
WO2015011983A1 (ja) * | 2013-07-22 | 2015-01-29 | 株式会社村田製作所 | 垂直共振面発光レーザアレイ |
DE102014011893B4 (de) * | 2013-08-16 | 2020-10-01 | Seoul Viosys Co., Ltd. | Leuchtdiode |
KR102015127B1 (ko) * | 2013-09-27 | 2019-08-27 | 엘지디스플레이 주식회사 | 질화물계 발광소자 |
JP2015126077A (ja) * | 2013-12-26 | 2015-07-06 | 豊田合成株式会社 | 発光部品および発光装置とこれらの製造方法 |
WO2015109968A1 (zh) * | 2014-01-23 | 2015-07-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | 晶圆级半导体器件及其制备方法 |
US9991423B2 (en) * | 2014-06-18 | 2018-06-05 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
KR20160000513A (ko) * | 2014-06-24 | 2016-01-05 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
WO2016043464A1 (en) * | 2014-09-15 | 2016-03-24 | Seoul Viosys Co., Ltd. | Light emitting diode |
KR102256632B1 (ko) | 2015-01-21 | 2021-05-26 | 엘지이노텍 주식회사 | 발광 소자 및 이를 제조하는 전자 빔 증착 장치 |
JP6156402B2 (ja) | 2015-02-13 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置 |
KR102268107B1 (ko) * | 2015-02-26 | 2021-06-22 | 엘지이노텍 주식회사 | 발광 소자 |
KR102239626B1 (ko) * | 2015-03-06 | 2021-04-12 | 엘지이노텍 주식회사 | 발광 소자 |
US9905729B2 (en) * | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
EP3316244B1 (en) * | 2015-06-26 | 2020-09-23 | Seoul Semiconductor Co., Ltd. | Backlight unit using multi-cell light emitting diode |
CN107039569B (zh) * | 2015-10-16 | 2019-04-23 | 首尔伟傲世有限公司 | 发光二极管芯片 |
US10126831B2 (en) | 2015-10-16 | 2018-11-13 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip, light emitting device and electronic device including the same |
KR101894046B1 (ko) * | 2016-08-24 | 2018-09-04 | 서울바이오시스 주식회사 | 소형 발광 다이오드 칩 및 그것을 포함하는 발광 장치 |
US9851056B2 (en) | 2015-10-16 | 2017-12-26 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip and light emitting device having a slim structure with secured durability |
TWI565095B (zh) * | 2015-11-09 | 2017-01-01 | 錼創科技股份有限公司 | 發光模組 |
US10153256B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-transfer printable electronic component |
FR3055945B1 (fr) * | 2016-09-15 | 2019-06-28 | Valeo Vision | Procede de montage de composants matriciels a elements semi-conducteurs electroluminescents pour realiser une source lumineuse pour un vehicule automobile |
US11011675B2 (en) | 2017-04-03 | 2021-05-18 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including same |
KR102417710B1 (ko) * | 2017-05-18 | 2022-07-06 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 및 그 제조 방법 |
CN109216525B (zh) * | 2017-07-04 | 2021-08-10 | 英属开曼群岛商錼创科技股份有限公司 | 发光模块及显示装置 |
TWI635470B (zh) | 2017-07-04 | 2018-09-11 | 錼創科技股份有限公司 | 發光模組及顯示裝置 |
DE102017130008A1 (de) * | 2017-12-14 | 2019-06-19 | Siteco Beleuchtungstechnik Gmbh | Led-bauteil mit kachelartigem muster von kontaktflächen |
DE102018101786A1 (de) * | 2018-01-26 | 2019-08-01 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauteil |
CN108493208B (zh) * | 2018-05-22 | 2024-04-05 | 珠海市一芯半导体科技有限公司 | 一种无混光多光点集成led芯片结构及制备方法 |
JP2020088020A (ja) | 2018-11-16 | 2020-06-04 | ソニーセミコンダクタソリューションズ株式会社 | 検出回路、駆動回路および発光装置 |
KR20200088954A (ko) * | 2019-01-15 | 2020-07-24 | 삼성디스플레이 주식회사 | 표시 장치 |
CN109920782B (zh) * | 2019-03-15 | 2021-08-17 | 深圳第三代半导体研究院 | 一种正装集成单元二极管芯片 |
CN110060996B (zh) * | 2019-04-11 | 2022-02-01 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
CN111933768B (zh) * | 2019-04-25 | 2022-05-06 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
CN110797370B (zh) * | 2019-05-06 | 2022-06-24 | 深圳第三代半导体研究院 | 一种集成单元二极管芯片 |
CN111900182A (zh) * | 2019-05-06 | 2020-11-06 | 深圳第三代半导体研究院 | 一种新型电极线排布的垂直结构led芯片 |
CN111916539B (zh) * | 2019-05-08 | 2022-04-19 | 深圳第三代半导体研究院 | 一种正装集成单元二极管芯片 |
CN111916432B (zh) * | 2019-05-08 | 2022-09-09 | 深圳第三代半导体研究院 | 一种均匀发光的正装集成单元二极管芯片 |
JP6842783B1 (ja) * | 2019-10-31 | 2021-03-17 | アルディーテック株式会社 | マイクロledディスプレイの製造方法およびマイクロledディスプレイ |
US20220310883A1 (en) * | 2019-10-31 | 2022-09-29 | Uldtec Co., Ltd. | Semiconductor chip integrated device manufacturing method, semiconductor chip integrated device, semiconductor chip integrated device assembly, semiconductor chip ink, and semiconductor chip ink ejection device |
KR20210069247A (ko) | 2019-12-03 | 2021-06-11 | 삼성전자주식회사 | 반도체 발광 소자 |
CN111313234B (zh) * | 2020-03-04 | 2021-09-24 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔面发射激光器阵列及其制造方法与应用 |
JP7319551B2 (ja) | 2020-03-31 | 2023-08-02 | 日亜化学工業株式会社 | 発光装置 |
DE112021003857T5 (de) * | 2020-07-20 | 2023-05-04 | Sony Semiconductor Solutions Corporation | Lichtemissionsvorrichtung |
KR102628302B1 (ko) * | 2021-08-02 | 2024-01-23 | 고려대학교 산학협력단 | 신축/유연 마이크로 발광다이오드 제조 방법 |
CN116507967A (zh) * | 2021-10-27 | 2023-07-28 | 京东方科技集团股份有限公司 | 发光基板及其制造方法、显示装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5307089A (en) * | 1989-08-07 | 1994-04-26 | Sanyo Electric Co., Ltd. | Optical printing head |
JPH08137413A (ja) | 1994-11-08 | 1996-05-31 | Hitachi Ltd | 半導体発光素子表示装置 |
EP1190410B1 (en) | 2000-01-25 | 2013-03-13 | Koninklijke Philips Electronics N.V. | Electroluminescent element |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
JP4585014B2 (ja) | 2002-04-12 | 2010-11-24 | ソウル セミコンダクター カンパニー リミテッド | 発光装置 |
JP2003309293A (ja) * | 2002-04-17 | 2003-10-31 | Sony Corp | 半導体発光素子パッケージ、表示装置、発光素子の除去方法及び発光素子の検査方法 |
US6842360B1 (en) * | 2003-05-30 | 2005-01-11 | Netlogic Microsystems, Inc. | High-density content addressable memory cell |
EP1658642B1 (en) * | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
JP2005153372A (ja) * | 2003-11-27 | 2005-06-16 | Seiko Epson Corp | ラインヘッドおよびそれを用いた画像形成装置 |
KR20030091927A (ko) * | 2003-11-17 | 2003-12-03 | 장홍선 | 발광다이오드 발광튜브와 설치구 |
US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
DE102004025684A1 (de) | 2004-04-29 | 2005-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zum Ausbilden einer Kontaktstruktur zur elektrischen Kontaktierung eines optoelektronischen Halbleiterchips |
JP3904571B2 (ja) * | 2004-09-02 | 2007-04-11 | ローム株式会社 | 半導体発光装置 |
TWM270492U (en) | 2004-10-08 | 2005-07-11 | Jen-Shian Chen | Package structure improvement of LED |
KR100642785B1 (ko) | 2005-03-17 | 2006-11-03 | 서울반도체 주식회사 | 발광 칩 |
KR101156452B1 (ko) | 2005-08-25 | 2012-06-13 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 |
KR100803162B1 (ko) | 2006-11-20 | 2008-02-14 | 서울옵토디바이스주식회사 | 교류용 발광소자 |
JP2010517273A (ja) * | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | フォールト・トレラント発光体、フォールト・トレラント発光体を含むシステムおよびフォールト・トレラント発光体を作製する方法 |
JP2010517274A (ja) | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法 |
US8153328B2 (en) * | 2007-07-17 | 2012-04-10 | Lawrence Livermore National Security, Llc | Carbon fuel cells with carbon corrosion suppression |
KR101525274B1 (ko) | 2007-10-26 | 2015-06-02 | 크리, 인코포레이티드 | 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법 |
JP2010040364A (ja) * | 2008-08-06 | 2010-02-18 | Panasonic Corp | 照明用光源 |
-
2010
- 2010-02-27 KR KR1020100018277A patent/KR101665932B1/ko active IP Right Grant
-
2011
- 2011-02-09 TW TW100104243A patent/TWI488340B/zh active
- 2011-02-24 US US13/034,279 patent/US8884318B2/en active Active
- 2011-02-25 JP JP2011040334A patent/JP5841338B2/ja active Active
- 2011-02-28 EP EP11156194.0A patent/EP2362420B1/en active Active
- 2011-02-28 CN CN201110053375.0A patent/CN102169941B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20110098874A (ko) | 2011-09-02 |
EP2362420B1 (en) | 2016-08-17 |
TW201214788A (en) | 2012-04-01 |
US8884318B2 (en) | 2014-11-11 |
CN102169941A (zh) | 2011-08-31 |
JP2011181925A (ja) | 2011-09-15 |
EP2362420A1 (en) | 2011-08-31 |
US20110210352A1 (en) | 2011-09-01 |
CN102169941B (zh) | 2015-09-02 |
KR101665932B1 (ko) | 2016-10-13 |
TWI488340B (zh) | 2015-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5841338B2 (ja) | マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置 | |
JP5683994B2 (ja) | マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置 | |
US8040050B2 (en) | AC driven light emitting device | |
US9035341B2 (en) | Semiconductor light emitting device with wiring unit arrangement | |
US9368548B2 (en) | AC light emitting diode and method for fabricating the same | |
US8901581B2 (en) | Semiconductor light emitting device having multi-cell array and manufacturing method thereof, light emitting module, and illumination apparatus | |
JP2013118292A (ja) | Led発光装置 | |
JP2014107369A (ja) | 半導体発光装置 | |
KR101216938B1 (ko) | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 및 이를이용한 발광 장치 | |
KR102290269B1 (ko) | Led 조명기판 및 그 제조방법 | |
KR102100286B1 (ko) | 발광다이오드 구조 | |
KR20220007225A (ko) | Led 조명기판 및 그 제조방법 | |
TWI769932B (zh) | 光源模組 | |
KR20100067442A (ko) | 교류구동 백색 발광장치 | |
KR101361109B1 (ko) | 교류 구동 발광 장치 | |
KR20130101959A (ko) | 멀티셀 어레이를 갖는 반도체 발광장치 | |
KR20170032664A (ko) | 엘이디 조명장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120813 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20130321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140212 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140212 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150413 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150804 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151016 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151113 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5841338 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |