CN108493208B - 一种无混光多光点集成led芯片结构及制备方法 - Google Patents
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Abstract
本发明公开了一种无混光多光点集成LED芯片结构及制备方法,包括蓝宝石基板,蓝宝石基板上设置有若干个氮化镓材质的发光晶粒,发光晶粒的两侧设置有n电极和p电极,n电极和p电极的表面均覆盖有绝缘层,绝缘层上覆盖具有图案的金属N焊盘和P焊盘层,相邻两个发光晶粒之间共n电极形成N焊盘或共p电极形成P焊盘,本发明具有多个发光点,相邻两个发光晶粒共用一个电极一个焊盘,有效地提高了芯片结构的集成密度,减少了模组体积;另外,蓝宝石基板的厚度大于0.6倍相邻两个发光晶粒的发光区的最小间隔,使各个发光点点亮的情况下不会产生相互混光窜光的现象,不需要在两个相邻发光晶粒之间设置挡光装置,有效地降低了生产成本。
Description
技术领域
本发明涉及一种LED芯片结构,特别是一种无混光多光点集成LED芯片结构及制备方法。
背景技术
LED(Light Emitting Diode),发光二极管,简称LED,是一种能够将电能转化为可见光的固态半导体器件,作为新型高效固体光源,半导体照明具有寿命长、节能、环保、安全等显著优点,广泛应用与照明、显示、信号指示灯领域。
但现有的LED集成模组基本上都是在封装层面或完成封装后在成品阶段进行发光单元独立控制,每个发光单元的都必须有独立的电极和焊盘,这就很难提高集成密度,减小模组体积;而且避免LED集成模组中发光单元之间的混光窜光现象,必须要在两个发光单元之间安装挡光装置,加工较为麻烦,这就使生产成本一直高居不下。
发明内容
为了克服现有技术的不足,本发明提供一种体积小、无混光的多光点集成LED芯片结构及制备方法。
本发明解决其技术问题所采用的技术方案是:
一种无混光多光点集成LED芯片结构及制备方法,包括蓝宝石基板,所述蓝宝石基板上设置有若干个氮化镓材质的发光晶粒,所述发光晶粒的两侧设置有n电极和p电极,所述n电极和p电极的表面均覆盖有绝缘层,所述绝缘层上覆盖具有图案的金属N焊盘和P焊盘层,所述相邻两个发光晶粒之间共n电极形成N焊盘或共p电极形成P焊盘。
所述蓝宝石基板的厚度为90-250微米,所述相邻两个发光晶粒的发光区的间隔为60-200微米,所述蓝宝石基板的厚度大于0.6倍相邻两个发光晶粒的发光区的最小间隔。
所述相邻两个发光晶粒的n电极与同一个N焊盘连接,所述每个发光晶粒的p电极单独引出P焊盘。
所述相邻两个发光晶粒的p电极与同一个P焊盘连接,所述每个发光晶粒的n电极单独引出N焊盘。
所述的集成LED芯片结构的制备方法包括以下步骤:
S1:由MOCVD生长氮化镓材料外延片,通过干法刻蚀工艺、气相沉积n电极和p电极;
S2:沉积绝缘层,通过光刻工艺后刻蚀出n和p电极上的导电孔;
S3:进一步气相沉积金属N焊盘和P焊盘层;
S4:最后,通过研磨、切割、劈裂工艺完成无混光多光点集成LED芯片的制作。
本发明的有益效果是:本发明的无混光多光点集成LED芯片结构设置有若干个氮化镓材质的发光晶粒,具有多个发光点,相邻两个发光晶粒共用一个电极一个焊盘,有效地提高了芯片结构的集成密度,减少了模组体积;蓝宝石基板的厚度大于0.6倍相邻两个发光晶粒的发光区的最小间隔,使各个发光点在同时点亮的情况下都不会产生相互混光窜光的现象,不需要在两个相邻发光晶粒之间设置挡光装置,有效地降低了生产成本。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明的共n电极的结构示意图;
图2是本发明的共p电极的结构示意图。
具体实施方式
参照图1、图2,一种无混光多光点集成LED芯片结构及制备方法,包括蓝宝石基板1,所述蓝宝石基板1上设置有若干个氮化镓材质的发光晶粒2,所述发光晶粒2为氮化镓材质,所发出的光包括紫外光、紫光、蓝光或绿光,所述发光晶粒2的两侧设置有n电极3和p电极4,所述n电极3和p电极4的表面均覆盖有绝缘层5,所述的绝缘层5为氧化硅、氮化硅或氧化钛等材质膜层,所述绝缘层5上覆盖具有图案的金属N焊盘6和P焊盘7层,所述绝缘层5具有孔状结构导通n电极3与N焊盘6、p电极4与P焊盘7,所述各发光晶粒2之间共n电极3形成N焊盘6或共p电极4形成P焊盘7。
对于共n电极结构,所述各发光晶粒2的n电极3与同一个N焊盘6连接,所述每个发光晶粒的p电极4单独引出P焊盘7,对于共p电极结构,所述各发光晶粒2的p电极4与同一个P焊盘7连接,所述每个发光晶粒的n电极3单独引出N焊盘6,本发明具有多个发光点,相邻两个发光晶粒共用一个电极一个焊盘,有效地提高了芯片结构的集成密度,减少了模组体积。
所述蓝宝石基板1的厚度为90-250微米,所述相邻两个发光晶粒2的发光区的间距为60-200微米,所述蓝宝石基板1的厚度大于0.6倍相邻两个发光晶粒2的发光区的最小间隔,控制发光晶粒的发光角度,使一部分可产生窜光的光在所述蓝宝石基板1内部发生全反射,另一部分需要的光通过蓝宝石基板特定区域表面折射出去,使得各发光点发出的光在任何情况都不会产生相互混光窜光的现象,不需要在两个相邻发光晶粒之间设置挡光装置,有效地降低了生产成本。
所述的集成LED芯片结构的制备方法包括以下步骤:
S1:由MOCVD生长氮化镓材料外延片,通过干法刻蚀工艺、气相沉积n电极3和p电极4;
S2:沉积绝缘层5,通过光刻工艺后刻蚀出n和p电极上的导电孔;
S3:进一步气相沉积金属N焊盘6和P焊盘7层;
S4:最后,通过研磨、切割、劈裂工艺完成无混光多光点集成LED芯片的制作。
以上的实施方式不能限定本发明创造的保护范围,专业技术领域的人员在不脱离本发明创造整体构思的情况下,所做的均等修饰与变化,均仍属于本发明创造涵盖的范围之内。
Claims (3)
1.一种无混光多光点集成LED芯片结构的制备方法,LED芯片结构包括蓝宝石基板(1),所述蓝宝石基板(1)上设置有若干个氮化镓材质的发光晶粒(2),所述发光晶粒(2)的两侧设置有n电极(3)和p电极(4),所述n电极(3)和p电极(4)的表面均覆盖有绝缘层(5),所述绝缘层(5)上覆盖具有图案的金属N焊盘(6)和P焊盘(7)层,相邻两个发光晶粒(2)之间共n电极(3)形成N焊盘(6)或共p电极(4)形成P焊盘(7);
其特征在于制备方法包括以下步骤:
S1:由MOCVD生长氮化镓材料外延片,通过干法刻蚀工艺、气相沉积n电极(3)和p电极(4);
S2:沉积绝缘层(5),通过光刻工艺后刻蚀出n和p电极上的导电孔;
S3:进一步气相沉积金属N焊盘(6)和P焊盘(7)层;
S4:最后,通过研磨、切割、劈裂工艺完成无混光多光点集成LED芯片的制作;
所述蓝宝石基板(1)的厚度为90-250微米,所述相邻两个发光晶粒(2)的发光区的间隔为60-200微米,所述蓝宝石基板(1)的厚度大于0.6倍相邻两个发光晶粒(2)的发光区的最小间隔。
2.根据权利要求1所述的无混光多光点集成LED芯片结构的制备方法,其特征在于所述相邻两个发光晶粒(2)的n电极(3)与同一个N焊盘(6)连接,所述每个发光晶粒的p电极(4)单独引出P焊盘(7)。
3.根据权利要求1所述的无混光多光点集成LED芯片结构的制备方法,其特征在于所述相邻两个发光晶粒(2)的p电极(4)与同一个P焊盘(7)连接,所述每个发光晶粒的n电极(3)单独引出N焊盘(6)。
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