JP5819054B2 - Sacp法およびsacp法を行うための粒子光学系 - Google Patents

Sacp法およびsacp法を行うための粒子光学系 Download PDF

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Publication number
JP5819054B2
JP5819054B2 JP2010250911A JP2010250911A JP5819054B2 JP 5819054 B2 JP5819054 B2 JP 5819054B2 JP 2010250911 A JP2010250911 A JP 2010250911A JP 2010250911 A JP2010250911 A JP 2010250911A JP 5819054 B2 JP5819054 B2 JP 5819054B2
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Prior art keywords
optical system
particle optical
incident
sacp
beam deflector
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Japanese (ja)
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JP2011100733A5 (enExample
JP2011100733A (ja
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プライクスツァス ディルク
プライクスツァス ディルク
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Carl Zeiss Microscopy GmbH
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Carl Zeiss Microscopy GmbH
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478Beam tilting means, i.e. for stereoscopy or for beam channelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295Electron or ion diffraction tubes
    • H01J37/2955Electron or ion diffraction tubes using scanning ray
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/1506Tilting or rocking beam around an axis substantially at an angle to optical axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1534Aberrations

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2010250911A 2009-11-09 2010-11-09 Sacp法およびsacp法を行うための粒子光学系 Active JP5819054B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009052392.8 2009-11-09
DE200910052392 DE102009052392A1 (de) 2009-11-09 2009-11-09 SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens

Publications (3)

Publication Number Publication Date
JP2011100733A JP2011100733A (ja) 2011-05-19
JP2011100733A5 JP2011100733A5 (enExample) 2014-12-25
JP5819054B2 true JP5819054B2 (ja) 2015-11-18

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JP2010250911A Active JP5819054B2 (ja) 2009-11-09 2010-11-09 Sacp法およびsacp法を行うための粒子光学系

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US (1) US9093246B2 (enExample)
EP (1) EP2320217B1 (enExample)
JP (1) JP5819054B2 (enExample)
DE (1) DE102009052392A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364112B2 (ja) * 2011-01-25 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5777984B2 (ja) * 2011-09-08 2015-09-16 株式会社日立ハイテクノロジーズ 多極子測定装置
EP2642279B1 (en) * 2012-03-19 2015-07-01 Universidad de Barcelona Method and system for improving characteristic peak signals in analytical electron microscopy
US8921782B2 (en) * 2012-11-30 2014-12-30 Kla-Tencor Corporation Tilt-imaging scanning electron microscope
US8993980B1 (en) * 2013-10-22 2015-03-31 Varian Semiconductor Equipment Associates, Inc. Dual stage scanner for ion beam control
JP6340216B2 (ja) * 2014-03-07 2018-06-06 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP2016115680A (ja) * 2014-12-17 2016-06-23 アプライド マテリアルズ イスラエル リミテッド 収差補正開孔を有する走査型荷電粒子ビームデバイスおよびその動作方法
CN111354614B (zh) 2016-01-29 2023-07-18 株式会社日立高新技术 带电粒子束装置及其光轴调整方法
WO2017193061A1 (en) * 2016-05-06 2017-11-09 Weiwei Xu Miniature electron beam lens array use as common platform ebeam wafer metrology, imaging and material analysis system
US9859091B1 (en) * 2016-06-20 2018-01-02 International Business Machines Corporation Automatic alignment for high throughput electron channeling contrast imaging
EP3343210B1 (en) * 2016-12-30 2020-11-18 IMEC vzw Characterization of regions with different crystallinity in materials
DE102017220398B3 (de) * 2017-11-15 2019-02-28 Carl Zeiss Microscopy Gmbh Verfahren zum Justieren eines Teilchenstrahlmikroskops
WO2019152585A2 (en) 2018-01-31 2019-08-08 Northwestern University Orientation determination and mapping by stage rocking electron channeling and imaging reconstruction
WO2019234787A1 (ja) 2018-06-04 2019-12-12 株式会社日立ハイテクノロジーズ 電子線装置
US10714303B2 (en) * 2018-07-19 2020-07-14 International Business Machines Corporation Enabling high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy
US11953316B2 (en) * 2020-09-17 2024-04-09 Applied Materials Israel Ltd. Geometry based three dimensional reconstruction of a semiconductor specimen by solving an optimization problem, using at least two SEM images acquired at different illumination angles
DE102021132340A1 (de) 2021-12-08 2023-06-15 Carl Zeiss Microscopy Gmbh Verfahren des Erzeugens einer Kristallorientierungskarte eines Oberflächenabschnitts einer Probe und Computerprogrammprodukt
US20250110069A1 (en) 2023-09-29 2025-04-03 Fei Company Method and system for orientating a sample for inspection with charged particle microscopy

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1802450B1 (de) * 1968-09-02 1970-07-02 Siemens Ag Verfahren zur Scharfstellung eines korpuskularstrahloptischen Bildes
GB1284061A (en) * 1970-01-21 1972-08-02 Cambridge Scientific Instr Ltd Electron beam apparatus
US3802784A (en) * 1972-02-16 1974-04-09 Technical Operations Inc Microdensitometer having linear response
US3801784A (en) * 1972-04-14 1974-04-02 Research Corp Scanning electron microscope operating in area scan and angle scan modes
US3914608A (en) * 1973-12-19 1975-10-21 Westinghouse Electric Corp Rapid exposure of micropatterns with a scanning electron microscope
US4348576A (en) * 1979-01-12 1982-09-07 Steigerwald Strahltechnik Gmbh Position regulation of a charge carrier beam
JPS58174857A (ja) 1982-04-08 1983-10-13 Yokogawa Hokushin Electric Corp 直流光電圧計
JPS58174857U (ja) * 1982-05-17 1983-11-22 株式会社日立製作所 立体走査型電子顕微鏡
US4663525A (en) * 1985-07-08 1987-05-05 Nanometrics Incorporated Method for electron gun alignment in electron microscopes
JPS6251142A (ja) * 1985-08-28 1987-03-05 Hitachi Ltd ビ−ムロツキング方法
JPS6252838A (ja) * 1985-08-30 1987-03-07 Jeol Ltd 走査電子顕微鏡
DE3703028A1 (de) * 1987-02-02 1988-09-01 Siemens Ag Rastermikroskop
DE3841715A1 (de) * 1988-12-10 1990-06-13 Zeiss Carl Fa Abbildender korrektor vom wien-typ fuer elektronenmikroskope
US4990779A (en) * 1989-06-06 1991-02-05 Nippon Steel Corporation Method and apparatus for evaluating strains in crystals
JPH0353441A (ja) * 1989-07-21 1991-03-07 Hitachi Ltd エレクトロンチヤネリングパターンを得る方法および装置
EP0451370B1 (en) 1990-04-12 1996-03-27 Koninklijke Philips Electronics N.V. Correction system for a charged-particle beam apparatus
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5254857A (en) * 1991-05-31 1993-10-19 Kachina Technologies, Inc. Fast scanning electron microscope (FSEM)
DE4129403A1 (de) 1991-09-04 1993-03-11 Zeiss Carl Fa Abbildungssystem fuer strahlung geladener teilchen mit spiegelkorrektor
DE19739290A1 (de) * 1997-09-08 1999-03-11 Ceos Gmbh Verfahren zur Beseitigung axialer Bildfehler erster, zweiter und dritter Ordnung bei Korrektur des Öffnungsfehlers dritter Ordnung in elektronen-optischen Systemen
DE19860224A1 (de) * 1998-03-24 1999-10-07 Dresden Ev Inst Festkoerper Verfahren zur Erzeugung von Echtzeit-Stereobildern von Werkstoffproben mittels Teilchenstrahl-Rastermikroskop
JP2000100364A (ja) * 1998-09-25 2000-04-07 Nikon Corp 荷電粒子線転写装置
DE69939309D1 (de) * 1999-03-31 2008-09-25 Advantest Corp Teilchenstrahlgerät zur schrägen Beobachtung einer Probe
US6614026B1 (en) 1999-04-15 2003-09-02 Applied Materials, Inc. Charged particle beam column
WO2001039243A1 (en) * 1999-11-23 2001-05-31 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
US6891167B2 (en) * 2000-06-15 2005-05-10 Kla-Tencor Technologies Apparatus and method for applying feedback control to a magnetic lens
KR100873447B1 (ko) * 2000-07-27 2008-12-11 가부시키가이샤 에바라 세이사꾸쇼 시트빔식 검사장치
DE10107910A1 (de) 2001-02-20 2002-08-22 Leo Elektronenmikroskopie Gmbh Teilchenstrahlsystem mit einem Spiegelkorrektor
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
JP3914750B2 (ja) * 2001-11-20 2007-05-16 日本電子株式会社 収差補正装置を備えた荷電粒子線装置
DE10159454B4 (de) * 2001-12-04 2012-08-02 Carl Zeiss Nts Gmbh Korrektor zur Korrektion von Farbfehlern erster Ordnung, ersten Grades
JP3953309B2 (ja) * 2001-12-04 2007-08-08 株式会社トプコン 走査電子顕微鏡装置
KR100450674B1 (ko) * 2002-03-12 2004-10-01 삼성전자주식회사 포토 마스크, 그 제조 방법 및 이를 이용한 웨이퍼 노광설비의 광학적 특성을 공정 중에 측정하는 방법
JP2004214060A (ja) * 2003-01-06 2004-07-29 Hitachi High-Technologies Corp 走査電子顕微鏡及びそれを用いた試料観察方法
JP4275441B2 (ja) * 2003-03-31 2009-06-10 株式会社日立ハイテクノロジーズ 収差補正器付電子線装置
DE602004016131D1 (de) * 2004-06-21 2008-10-09 Integrated Circuit Testing Dispositif de correction d'aberration et methode de mise en oeuvre
JP4620981B2 (ja) 2004-08-10 2011-01-26 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
US20090212213A1 (en) * 2005-03-03 2009-08-27 Ebara Corporation Projection electron beam apparatus and defect inspection system using the apparatus
JP2007242490A (ja) * 2006-03-10 2007-09-20 Ebara Corp 荷電粒子線光学系用の収差補正光学装置及び光学系
JP4851268B2 (ja) * 2006-08-31 2012-01-11 日本電子株式会社 収差補正方法および電子線装置
JP4781211B2 (ja) 2006-09-25 2011-09-28 株式会社荏原製作所 電子線装置及びこれを用いたパターン評価方法
JP2008203109A (ja) * 2007-02-21 2008-09-04 Hitachi High-Technologies Corp パターン寸法計測方法及びその装置
EP2088614B1 (en) * 2008-02-08 2010-12-15 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Beam current calibration system
US7723706B2 (en) * 2008-06-19 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Horizontal and vertical beam angle measurement technique

Also Published As

Publication number Publication date
DE102009052392A1 (de) 2011-12-15
EP2320217B1 (en) 2019-02-13
US20110108736A1 (en) 2011-05-12
EP2320217A3 (en) 2015-01-07
EP2320217A8 (en) 2011-07-13
JP2011100733A (ja) 2011-05-19
US9093246B2 (en) 2015-07-28
EP2320217A2 (en) 2011-05-11

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