JP5819054B2 - Sacp法およびsacp法を行うための粒子光学系 - Google Patents
Sacp法およびsacp法を行うための粒子光学系 Download PDFInfo
- Publication number
- JP5819054B2 JP5819054B2 JP2010250911A JP2010250911A JP5819054B2 JP 5819054 B2 JP5819054 B2 JP 5819054B2 JP 2010250911 A JP2010250911 A JP 2010250911A JP 2010250911 A JP2010250911 A JP 2010250911A JP 5819054 B2 JP5819054 B2 JP 5819054B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- particle optical
- incident
- sacp
- beam deflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/295—Electron or ion diffraction tubes
- H01J37/2955—Electron or ion diffraction tubes using scanning ray
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009052392.8 | 2009-11-09 | ||
| DE200910052392 DE102009052392A1 (de) | 2009-11-09 | 2009-11-09 | SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011100733A JP2011100733A (ja) | 2011-05-19 |
| JP2011100733A5 JP2011100733A5 (enExample) | 2014-12-25 |
| JP5819054B2 true JP5819054B2 (ja) | 2015-11-18 |
Family
ID=43414862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010250911A Active JP5819054B2 (ja) | 2009-11-09 | 2010-11-09 | Sacp法およびsacp法を行うための粒子光学系 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9093246B2 (enExample) |
| EP (1) | EP2320217B1 (enExample) |
| JP (1) | JP5819054B2 (enExample) |
| DE (1) | DE102009052392A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5364112B2 (ja) * | 2011-01-25 | 2013-12-11 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP5777984B2 (ja) * | 2011-09-08 | 2015-09-16 | 株式会社日立ハイテクノロジーズ | 多極子測定装置 |
| EP2642279B1 (en) * | 2012-03-19 | 2015-07-01 | Universidad de Barcelona | Method and system for improving characteristic peak signals in analytical electron microscopy |
| US8921782B2 (en) * | 2012-11-30 | 2014-12-30 | Kla-Tencor Corporation | Tilt-imaging scanning electron microscope |
| US8993980B1 (en) * | 2013-10-22 | 2015-03-31 | Varian Semiconductor Equipment Associates, Inc. | Dual stage scanner for ion beam control |
| JP6340216B2 (ja) * | 2014-03-07 | 2018-06-06 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| JP2016115680A (ja) * | 2014-12-17 | 2016-06-23 | アプライド マテリアルズ イスラエル リミテッド | 収差補正開孔を有する走査型荷電粒子ビームデバイスおよびその動作方法 |
| CN111354614B (zh) | 2016-01-29 | 2023-07-18 | 株式会社日立高新技术 | 带电粒子束装置及其光轴调整方法 |
| WO2017193061A1 (en) * | 2016-05-06 | 2017-11-09 | Weiwei Xu | Miniature electron beam lens array use as common platform ebeam wafer metrology, imaging and material analysis system |
| US9859091B1 (en) * | 2016-06-20 | 2018-01-02 | International Business Machines Corporation | Automatic alignment for high throughput electron channeling contrast imaging |
| EP3343210B1 (en) * | 2016-12-30 | 2020-11-18 | IMEC vzw | Characterization of regions with different crystallinity in materials |
| DE102017220398B3 (de) * | 2017-11-15 | 2019-02-28 | Carl Zeiss Microscopy Gmbh | Verfahren zum Justieren eines Teilchenstrahlmikroskops |
| WO2019152585A2 (en) | 2018-01-31 | 2019-08-08 | Northwestern University | Orientation determination and mapping by stage rocking electron channeling and imaging reconstruction |
| WO2019234787A1 (ja) | 2018-06-04 | 2019-12-12 | 株式会社日立ハイテクノロジーズ | 電子線装置 |
| US10714303B2 (en) * | 2018-07-19 | 2020-07-14 | International Business Machines Corporation | Enabling high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy |
| US11953316B2 (en) * | 2020-09-17 | 2024-04-09 | Applied Materials Israel Ltd. | Geometry based three dimensional reconstruction of a semiconductor specimen by solving an optimization problem, using at least two SEM images acquired at different illumination angles |
| DE102021132340A1 (de) | 2021-12-08 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Verfahren des Erzeugens einer Kristallorientierungskarte eines Oberflächenabschnitts einer Probe und Computerprogrammprodukt |
| US20250110069A1 (en) | 2023-09-29 | 2025-04-03 | Fei Company | Method and system for orientating a sample for inspection with charged particle microscopy |
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| DE1802450B1 (de) * | 1968-09-02 | 1970-07-02 | Siemens Ag | Verfahren zur Scharfstellung eines korpuskularstrahloptischen Bildes |
| GB1284061A (en) * | 1970-01-21 | 1972-08-02 | Cambridge Scientific Instr Ltd | Electron beam apparatus |
| US3802784A (en) * | 1972-02-16 | 1974-04-09 | Technical Operations Inc | Microdensitometer having linear response |
| US3801784A (en) * | 1972-04-14 | 1974-04-02 | Research Corp | Scanning electron microscope operating in area scan and angle scan modes |
| US3914608A (en) * | 1973-12-19 | 1975-10-21 | Westinghouse Electric Corp | Rapid exposure of micropatterns with a scanning electron microscope |
| US4348576A (en) * | 1979-01-12 | 1982-09-07 | Steigerwald Strahltechnik Gmbh | Position regulation of a charge carrier beam |
| JPS58174857A (ja) | 1982-04-08 | 1983-10-13 | Yokogawa Hokushin Electric Corp | 直流光電圧計 |
| JPS58174857U (ja) * | 1982-05-17 | 1983-11-22 | 株式会社日立製作所 | 立体走査型電子顕微鏡 |
| US4663525A (en) * | 1985-07-08 | 1987-05-05 | Nanometrics Incorporated | Method for electron gun alignment in electron microscopes |
| JPS6251142A (ja) * | 1985-08-28 | 1987-03-05 | Hitachi Ltd | ビ−ムロツキング方法 |
| JPS6252838A (ja) * | 1985-08-30 | 1987-03-07 | Jeol Ltd | 走査電子顕微鏡 |
| DE3703028A1 (de) * | 1987-02-02 | 1988-09-01 | Siemens Ag | Rastermikroskop |
| DE3841715A1 (de) * | 1988-12-10 | 1990-06-13 | Zeiss Carl Fa | Abbildender korrektor vom wien-typ fuer elektronenmikroskope |
| US4990779A (en) * | 1989-06-06 | 1991-02-05 | Nippon Steel Corporation | Method and apparatus for evaluating strains in crystals |
| JPH0353441A (ja) * | 1989-07-21 | 1991-03-07 | Hitachi Ltd | エレクトロンチヤネリングパターンを得る方法および装置 |
| EP0451370B1 (en) | 1990-04-12 | 1996-03-27 | Koninklijke Philips Electronics N.V. | Correction system for a charged-particle beam apparatus |
| US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
| US5254857A (en) * | 1991-05-31 | 1993-10-19 | Kachina Technologies, Inc. | Fast scanning electron microscope (FSEM) |
| DE4129403A1 (de) | 1991-09-04 | 1993-03-11 | Zeiss Carl Fa | Abbildungssystem fuer strahlung geladener teilchen mit spiegelkorrektor |
| DE19739290A1 (de) * | 1997-09-08 | 1999-03-11 | Ceos Gmbh | Verfahren zur Beseitigung axialer Bildfehler erster, zweiter und dritter Ordnung bei Korrektur des Öffnungsfehlers dritter Ordnung in elektronen-optischen Systemen |
| DE19860224A1 (de) * | 1998-03-24 | 1999-10-07 | Dresden Ev Inst Festkoerper | Verfahren zur Erzeugung von Echtzeit-Stereobildern von Werkstoffproben mittels Teilchenstrahl-Rastermikroskop |
| JP2000100364A (ja) * | 1998-09-25 | 2000-04-07 | Nikon Corp | 荷電粒子線転写装置 |
| DE69939309D1 (de) * | 1999-03-31 | 2008-09-25 | Advantest Corp | Teilchenstrahlgerät zur schrägen Beobachtung einer Probe |
| US6614026B1 (en) | 1999-04-15 | 2003-09-02 | Applied Materials, Inc. | Charged particle beam column |
| WO2001039243A1 (en) * | 1999-11-23 | 2001-05-31 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
| US6891167B2 (en) * | 2000-06-15 | 2005-05-10 | Kla-Tencor Technologies | Apparatus and method for applying feedback control to a magnetic lens |
| KR100873447B1 (ko) * | 2000-07-27 | 2008-12-11 | 가부시키가이샤 에바라 세이사꾸쇼 | 시트빔식 검사장치 |
| DE10107910A1 (de) | 2001-02-20 | 2002-08-22 | Leo Elektronenmikroskopie Gmbh | Teilchenstrahlsystem mit einem Spiegelkorrektor |
| JP4738610B2 (ja) * | 2001-03-02 | 2011-08-03 | 株式会社トプコン | 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法 |
| JP3914750B2 (ja) * | 2001-11-20 | 2007-05-16 | 日本電子株式会社 | 収差補正装置を備えた荷電粒子線装置 |
| DE10159454B4 (de) * | 2001-12-04 | 2012-08-02 | Carl Zeiss Nts Gmbh | Korrektor zur Korrektion von Farbfehlern erster Ordnung, ersten Grades |
| JP3953309B2 (ja) * | 2001-12-04 | 2007-08-08 | 株式会社トプコン | 走査電子顕微鏡装置 |
| KR100450674B1 (ko) * | 2002-03-12 | 2004-10-01 | 삼성전자주식회사 | 포토 마스크, 그 제조 방법 및 이를 이용한 웨이퍼 노광설비의 광학적 특성을 공정 중에 측정하는 방법 |
| JP2004214060A (ja) * | 2003-01-06 | 2004-07-29 | Hitachi High-Technologies Corp | 走査電子顕微鏡及びそれを用いた試料観察方法 |
| JP4275441B2 (ja) * | 2003-03-31 | 2009-06-10 | 株式会社日立ハイテクノロジーズ | 収差補正器付電子線装置 |
| DE602004016131D1 (de) * | 2004-06-21 | 2008-10-09 | Integrated Circuit Testing | Dispositif de correction d'aberration et methode de mise en oeuvre |
| JP4620981B2 (ja) | 2004-08-10 | 2011-01-26 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置 |
| US20090212213A1 (en) * | 2005-03-03 | 2009-08-27 | Ebara Corporation | Projection electron beam apparatus and defect inspection system using the apparatus |
| JP2007242490A (ja) * | 2006-03-10 | 2007-09-20 | Ebara Corp | 荷電粒子線光学系用の収差補正光学装置及び光学系 |
| JP4851268B2 (ja) * | 2006-08-31 | 2012-01-11 | 日本電子株式会社 | 収差補正方法および電子線装置 |
| JP4781211B2 (ja) | 2006-09-25 | 2011-09-28 | 株式会社荏原製作所 | 電子線装置及びこれを用いたパターン評価方法 |
| JP2008203109A (ja) * | 2007-02-21 | 2008-09-04 | Hitachi High-Technologies Corp | パターン寸法計測方法及びその装置 |
| EP2088614B1 (en) * | 2008-02-08 | 2010-12-15 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Beam current calibration system |
| US7723706B2 (en) * | 2008-06-19 | 2010-05-25 | Varian Semiconductor Equipment Associates, Inc. | Horizontal and vertical beam angle measurement technique |
-
2009
- 2009-11-09 DE DE200910052392 patent/DE102009052392A1/de not_active Ceased
-
2010
- 2010-11-09 US US12/942,477 patent/US9093246B2/en active Active
- 2010-11-09 JP JP2010250911A patent/JP5819054B2/ja active Active
- 2010-11-09 EP EP10014424.5A patent/EP2320217B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE102009052392A1 (de) | 2011-12-15 |
| EP2320217B1 (en) | 2019-02-13 |
| US20110108736A1 (en) | 2011-05-12 |
| EP2320217A3 (en) | 2015-01-07 |
| EP2320217A8 (en) | 2011-07-13 |
| JP2011100733A (ja) | 2011-05-19 |
| US9093246B2 (en) | 2015-07-28 |
| EP2320217A2 (en) | 2011-05-11 |
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