JP5817834B2 - 半導体装置および半導体装置製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 117
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 238000005476 soldering Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000013459 approach Methods 0.000 claims description 12
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4875—Connection or disconnection of other leads to or from bases or plates
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
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Description
また、本発明の他の目的は、半田付け性の安定化を図り、接続不良を防止した半導体装置製造方法を提供することである。
図13は同一位置にあるプレス溝を示す図である。例えば、端子バー30aのプレス溝33a−1が、外囲ケース20−1の側壁20aから距離Aだけ離れているとする。
〔S1〕金属ベース板10に、絶縁基板11を半田マウントする。
〔S3〕金属ベース板10に外囲ケース20の取り付けを行う。なお、外囲ケース20は、絶縁基板11と向かい合う面31aとは反対側の面31bであって、かつ側壁20a、20bの近傍の位置に対して、プレス溝33−1、33−2が両端に設けられている金属製の端子バー30を備えている。
以上説明したように、本発明によれば、端子バーにプレス溝加工を施して、半田付けの加熱時に生じる端子バーの熱膨張変形の方向を、端子バーが常に絶縁基板が位置する下方向へ曲がる構成とした。
上記については単に本発明の原理を示すものである。さらに、多数の変形、変更が当業者にとって可能であり、本発明は上記に示し、説明した正確な構成および応用例に限定されるものではなく、対応するすべての変形例および均等物は、添付の請求項およびその均等物による本発明の範囲とみなされる。
11 絶縁基板
12 半導体素子
20 外囲ケース
20a、20b 側壁
30 端子バー
31a、31b 面
32−1、32−2 端子部
33−1、33−2 プレス溝
Claims (8)
- 半導体素子が実装されている絶縁基板と、
前記絶縁基板を収容する外囲ケースと、
前記絶縁基板の上部に配置され、前記外囲ケースの側壁に両端が固定されている金属製の端子バーと、
を備え、
前記端子バーの両端部の、前記絶縁基板と向かい合う面とは反対側の面であって、かつ前記外囲ケースの側壁の近傍の位置に、それぞれプレス溝が設けられている、
ことを特徴とする半導体装置。 - 前記プレス溝の凹部が、前記絶縁基板と向かい合う面とは反対側の面に開口していることを特徴とする請求項1記載の半導体装置。
- 前記プレス溝は、前記端子バーに形成された端子部と、前記絶縁基板との半田付け時に、半田付けの加熱によって、前記絶縁基板が位置する下方向へ前記端子バーが変形して、前記端子バーが前記絶縁基板に近づくように、熱変形方向を定めることを特徴とする請求項1記載の半導体装置。
- 前記外囲ケースは、一定間隔を空けて層状に重ねられた複数の端子バーを有し、前記複数の端子バーは、前記プレス溝が同一位置に設けられていることを特徴とする請求項1記載の半導体装置。
- 半導体装置製造方法において、
半導体素子が実装されている絶縁基板を、金属製の端子バーを有する外囲ケースで収容し、
前記端子バーは、前記絶縁基板の上部に配置され、前記外囲ケースの側壁に両端が固定され、両端部に対し、前記絶縁基板と向かい合う面とは反対側の面であって、かつ前記外囲ケースの側壁の近傍の位置に、それぞれプレス溝が設けられており、
前記端子バーに形成している端子部と、前記絶縁基板とを半田付けして半導体装置を製造する、
ことを特徴とする半導体装置製造方法。 - 前記プレス溝の凹部が、前記絶縁基板と向かい合う面とは反対側の面に開口していることを特徴とする請求項5記載の半導体装置製造方法。
- 前記プレス溝は、前記端子部と、前記絶縁基板との半田付け時に、半田付けの加熱によって、前記絶縁基板が位置する下方向へ前記端子バーが変形して、前記端子バーが前記絶縁基板に近づくように、熱変形方向を定めることを特徴とする請求項5記載の半導体装置製造方法。
- 前記外囲ケースは、一定間隔を空けて層状に重ねられた複数の端子バーを有し、前記複数の端子バーは、前記プレス溝が同一位置に設けられていることを特徴とする請求項5記載の半導体装置製造方法。
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PCT/JP2012/073316 WO2013058038A1 (ja) | 2011-10-18 | 2012-09-12 | 半導体装置および半導体装置製造方法 |
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JP6304974B2 (ja) * | 2013-08-27 | 2018-04-04 | 三菱電機株式会社 | 半導体装置 |
JP6891621B2 (ja) | 2017-04-27 | 2021-06-18 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6964437B2 (ja) * | 2017-05-31 | 2021-11-10 | 新電元工業株式会社 | 電子モジュール |
DE112018008155T5 (de) | 2018-11-20 | 2021-07-29 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP7090580B2 (ja) * | 2019-05-15 | 2022-06-24 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US5455456A (en) * | 1993-09-15 | 1995-10-03 | Lsi Logic Corporation | Integrated circuit package lid |
JP2979923B2 (ja) | 1993-10-13 | 1999-11-22 | 富士電機株式会社 | 半導体装置 |
JPH08204115A (ja) | 1995-01-30 | 1996-08-09 | Fuji Electric Co Ltd | 半導体装置 |
JP3519227B2 (ja) | 1996-04-08 | 2004-04-12 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP3956886B2 (ja) | 2002-11-22 | 2007-08-08 | 株式会社豊田自動織機 | 半導体モジュールおよび半導体モジュール用リード |
JP2006186170A (ja) * | 2004-12-28 | 2006-07-13 | Nissan Motor Co Ltd | 半導体装置 |
JP4615388B2 (ja) * | 2005-07-25 | 2011-01-19 | Okiセミコンダクタ株式会社 | 半導体パッケージ及びその製造方法 |
JP5205834B2 (ja) | 2007-06-25 | 2013-06-05 | 日産自動車株式会社 | 半導体装置 |
JP4400662B2 (ja) | 2007-09-12 | 2010-01-20 | 株式会社デンソー | 電子回路部品実装構造 |
JP2010212620A (ja) | 2009-03-12 | 2010-09-24 | Toshiba Corp | パワーモジュール |
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- 2012-09-12 DE DE112012004381.2T patent/DE112012004381B4/de active Active
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- 2012-09-12 US US14/351,457 patent/US8994164B2/en active Active
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Publication number | Publication date |
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WO2013058038A1 (ja) | 2013-04-25 |
US8994164B2 (en) | 2015-03-31 |
CN103890934A (zh) | 2014-06-25 |
DE112012004381T5 (de) | 2014-07-17 |
US20140246769A1 (en) | 2014-09-04 |
JPWO2013058038A1 (ja) | 2015-04-02 |
DE112012004381B4 (de) | 2023-08-10 |
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