JP5815466B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5815466B2
JP5815466B2 JP2012108215A JP2012108215A JP5815466B2 JP 5815466 B2 JP5815466 B2 JP 5815466B2 JP 2012108215 A JP2012108215 A JP 2012108215A JP 2012108215 A JP2012108215 A JP 2012108215A JP 5815466 B2 JP5815466 B2 JP 5815466B2
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JP
Japan
Prior art keywords
transistor
terminal
electrically connected
gate
oxide semiconductor
Prior art date
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Expired - Fee Related
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JP2012108215A
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English (en)
Japanese (ja)
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JP2012257212A5 (enExample
JP2012257212A (ja
Inventor
達也 大貫
達也 大貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012108215A priority Critical patent/JP5815466B2/ja
Publication of JP2012257212A publication Critical patent/JP2012257212A/ja
Publication of JP2012257212A5 publication Critical patent/JP2012257212A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2012108215A 2011-05-13 2012-05-10 半導体装置 Expired - Fee Related JP5815466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012108215A JP5815466B2 (ja) 2011-05-13 2012-05-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011108736 2011-05-13
JP2011108736 2011-05-13
JP2012108215A JP5815466B2 (ja) 2011-05-13 2012-05-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2012257212A JP2012257212A (ja) 2012-12-27
JP2012257212A5 JP2012257212A5 (enExample) 2015-04-30
JP5815466B2 true JP5815466B2 (ja) 2015-11-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012108215A Expired - Fee Related JP5815466B2 (ja) 2011-05-13 2012-05-10 半導体装置

Country Status (5)

Country Link
US (1) US8736371B2 (enExample)
JP (1) JP5815466B2 (enExample)
KR (1) KR101921772B1 (enExample)
TW (1) TWI562534B (enExample)
WO (1) WO2012157463A1 (enExample)

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JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
US9374048B2 (en) * 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
PL3079688T3 (pl) * 2013-12-13 2018-05-30 Pierre Fabre Medicament Pochodna chromonu jako antagonista receptora dopaminy D3 do zastosowania w leczeniu zaburzenia ze spektrum autyzmu
CN104935277B (zh) * 2015-07-01 2017-07-21 东南大学 硅基低漏电流固支梁栅mos管乙类推挽功率放大器
IT201600088370A1 (it) * 2016-08-31 2018-03-03 St Microelectronics Srl Circuito con compensazione miller, regolatore, sistema e procedimento corrispondenti
US11899478B2 (en) 2018-12-21 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and artificial satellite
KR102401939B1 (ko) * 2020-07-27 2022-05-26 한양대학교 산학협력단 이종 접합 구조의 금속 산화물 반도체층을 갖는 박막 트랜지스터, 이를 포함하는 디스플레이 장치 및 이의 제조방법

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US8736371B2 (en) 2014-05-27
US20120286871A1 (en) 2012-11-15
JP2012257212A (ja) 2012-12-27
TW201308888A (zh) 2013-02-16
KR101921772B1 (ko) 2018-11-23

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