TWI562534B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI562534B
TWI562534B TW101116525A TW101116525A TWI562534B TW I562534 B TWI562534 B TW I562534B TW 101116525 A TW101116525 A TW 101116525A TW 101116525 A TW101116525 A TW 101116525A TW I562534 B TWI562534 B TW I562534B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW101116525A
Other languages
English (en)
Chinese (zh)
Other versions
TW201308888A (zh
Inventor
Tatsuya Ohnuki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of TW201308888A publication Critical patent/TW201308888A/zh
Application granted granted Critical
Publication of TWI562534B publication Critical patent/TWI562534B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
TW101116525A 2011-05-13 2012-05-09 Semiconductor device TWI562534B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011108736 2011-05-13

Publications (2)

Publication Number Publication Date
TW201308888A TW201308888A (zh) 2013-02-16
TWI562534B true TWI562534B (en) 2016-12-11

Family

ID=47141498

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101116525A TWI562534B (en) 2011-05-13 2012-05-09 Semiconductor device

Country Status (5)

Country Link
US (1) US8736371B2 (enExample)
JP (1) JP5815466B2 (enExample)
KR (1) KR101921772B1 (enExample)
TW (1) TWI562534B (enExample)
WO (1) WO2012157463A1 (enExample)

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JP4785271B2 (ja) * 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
TWI464557B (zh) * 2012-09-19 2014-12-11 Novatek Microelectronics Corp 負載驅動裝置及灰階電壓產生電路
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
US9374048B2 (en) * 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
PL3079688T3 (pl) * 2013-12-13 2018-05-30 Pierre Fabre Medicament Pochodna chromonu jako antagonista receptora dopaminy D3 do zastosowania w leczeniu zaburzenia ze spektrum autyzmu
CN104935277B (zh) * 2015-07-01 2017-07-21 东南大学 硅基低漏电流固支梁栅mos管乙类推挽功率放大器
IT201600088370A1 (it) * 2016-08-31 2018-03-03 St Microelectronics Srl Circuito con compensazione miller, regolatore, sistema e procedimento corrispondenti
US11899478B2 (en) 2018-12-21 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and artificial satellite
KR102401939B1 (ko) * 2020-07-27 2022-05-26 한양대학교 산학협력단 이종 접합 구조의 금속 산화물 반도체층을 갖는 박막 트랜지스터, 이를 포함하는 디스플레이 장치 및 이의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885240B2 (en) * 2002-07-19 2005-04-26 Hynix Semiconductor Inc. Amplifying circuit with variable load drivability
JP2008053554A (ja) * 2006-08-25 2008-03-06 Osaka Univ 電子デバイスとその製造方法
TW201110242A (en) * 2009-06-30 2011-03-16 Semiconductor Energy Lab Method for manufacturing semiconductor device

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US8736371B2 (en) 2014-05-27
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