SG10201504486PA - Semiconductor device with biased feature - Google Patents
Semiconductor device with biased featureInfo
- Publication number
- SG10201504486PA SG10201504486PA SG10201504486PA SG10201504486PA SG10201504486PA SG 10201504486P A SG10201504486P A SG 10201504486PA SG 10201504486P A SG10201504486P A SG 10201504486PA SG 10201504486P A SG10201504486P A SG 10201504486PA SG 10201504486P A SG10201504486P A SG 10201504486PA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- biased feature
- biased
- feature
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161576663P | 2011-12-16 | 2011-12-16 | |
US13/399,502 US9059001B2 (en) | 2011-12-16 | 2012-02-17 | Semiconductor device with biased feature |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201504486PA true SG10201504486PA (en) | 2015-07-30 |
Family
ID=48609251
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201504486PA SG10201504486PA (en) | 2011-12-16 | 2012-03-23 | Semiconductor device with biased feature |
SG2012021200A SG191454A1 (en) | 2011-12-16 | 2012-03-23 | Semiconductor device with biased feature |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012021200A SG191454A1 (en) | 2011-12-16 | 2012-03-23 | Semiconductor device with biased feature |
Country Status (4)
Country | Link |
---|---|
US (2) | US9059001B2 (en) |
KR (1) | KR101368509B1 (en) |
CN (1) | CN103165415B (en) |
SG (2) | SG10201504486PA (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124161B (en) * | 2013-04-23 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | Forming method of grid side wall layer |
CN104241088B (en) * | 2013-06-09 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | The forming method of strip structure |
US9177797B2 (en) * | 2013-12-04 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography using high selectivity spacers for pitch reduction |
US9490174B2 (en) * | 2014-05-16 | 2016-11-08 | Globalfoundries Inc. | Fabricating raised fins using ancillary fin structures |
CN105514163B (en) * | 2014-09-26 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | Fin formula field effect transistor and forming method thereof |
US9472653B2 (en) * | 2014-11-26 | 2016-10-18 | Samsung Electronics Co., Ltd. | Method for fabricating semiconductor device |
US9508719B2 (en) | 2014-11-26 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same |
TWI638385B (en) * | 2015-03-31 | 2018-10-11 | 聯華電子股份有限公司 | Patterned sttructure of a semiconductor device and a manufacturing method thereof |
US9425097B1 (en) * | 2015-04-29 | 2016-08-23 | Globalfoundries Inc. | Cut first alternative for 2D self-aligned via |
US9882028B2 (en) * | 2016-06-29 | 2018-01-30 | International Business Machines Corporation | Pitch split patterning for semiconductor devices |
US10672668B2 (en) | 2018-05-30 | 2020-06-02 | International Business Machines Corporation | Dual width finned semiconductor structure |
US10591815B2 (en) * | 2018-06-28 | 2020-03-17 | Applied Materials, Inc. | Shifting of patterns to reduce line waviness |
US10845670B2 (en) * | 2018-08-17 | 2020-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Folded waveguide phase shifters |
JP7126468B2 (en) * | 2019-03-20 | 2022-08-26 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
KR20200124114A (en) * | 2019-04-23 | 2020-11-02 | 삼성전자주식회사 | Semiconductor device including gate pattern and manufacturing method thereof |
CN113257664B (en) * | 2020-02-11 | 2023-10-13 | 华邦电子股份有限公司 | Semiconductor device and method for manufacturing the same |
US11315872B1 (en) * | 2020-12-10 | 2022-04-26 | International Business Machines Corporation | Self-aligned top via |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3098612B2 (en) * | 1992-05-28 | 2000-10-16 | 松下電子工業株式会社 | MOS type semiconductor device |
KR0143340B1 (en) * | 1994-09-09 | 1998-08-17 | 김주용 | Phase shift mask |
JP2001194084A (en) * | 1999-12-15 | 2001-07-17 | Lg Electronics Inc | Fin tube type heat exchanger |
US6800905B2 (en) * | 2001-12-14 | 2004-10-05 | International Business Machines Corporation | Implanted asymmetric doped polysilicon gate FinFET |
US6611029B1 (en) * | 2002-11-08 | 2003-08-26 | Advanced Micro Devices, Inc. | Double gate semiconductor device having separate gates |
KR100521377B1 (en) | 2003-02-21 | 2005-10-12 | 삼성전자주식회사 | Method for forming fin field effect transistor |
US20040266115A1 (en) * | 2003-06-25 | 2004-12-30 | Bor-Wen Chan | Method of making a gate electrode on a semiconductor device |
US7095065B2 (en) * | 2003-08-05 | 2006-08-22 | Advanced Micro Devices, Inc. | Varying carrier mobility in semiconductor devices to achieve overall design goals |
US6998301B1 (en) * | 2003-09-03 | 2006-02-14 | Advanced Micro Devices, Inc. | Method for forming a tri-gate MOSFET |
US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US20080111185A1 (en) * | 2006-11-13 | 2008-05-15 | International Business Machines Corporation | Asymmetric multi-gated transistor and method for forming |
US20090035902A1 (en) | 2007-07-31 | 2009-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated method of fabricating a memory device with reduced pitch |
US8258585B2 (en) * | 2008-05-29 | 2012-09-04 | Panasonic Corporation | Semiconductor device |
US7989355B2 (en) | 2009-02-12 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of pitch halving |
US7862962B2 (en) | 2009-01-20 | 2011-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit layout design |
US7829466B2 (en) * | 2009-02-04 | 2010-11-09 | GlobalFoundries, Inc. | Methods for fabricating FinFET structures having different channel lengths |
US8105901B2 (en) * | 2009-07-27 | 2012-01-31 | International Business Machines Corporation | Method for double pattern density |
US8557675B2 (en) * | 2011-11-28 | 2013-10-15 | Globalfoundries Inc. | Methods of patterning features in a structure using multiple sidewall image transfer technique |
US8962484B2 (en) | 2011-12-16 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming pattern for semiconductor device |
-
2012
- 2012-02-17 US US13/399,502 patent/US9059001B2/en active Active
- 2012-03-23 SG SG10201504486PA patent/SG10201504486PA/en unknown
- 2012-03-23 SG SG2012021200A patent/SG191454A1/en unknown
- 2012-06-25 CN CN201210213759.9A patent/CN103165415B/en active Active
- 2012-07-03 KR KR1020120072246A patent/KR101368509B1/en active IP Right Grant
-
2015
- 2015-06-12 US US14/738,407 patent/US9607835B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9059001B2 (en) | 2015-06-16 |
SG191454A1 (en) | 2013-07-31 |
US20130154004A1 (en) | 2013-06-20 |
KR101368509B1 (en) | 2014-02-27 |
US9607835B2 (en) | 2017-03-28 |
US20150357460A1 (en) | 2015-12-10 |
CN103165415A (en) | 2013-06-19 |
KR20130069318A (en) | 2013-06-26 |
CN103165415B (en) | 2016-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI562156B (en) | Semiconductor device | |
TWI560842B (en) | Semiconductor device | |
SG11201504823YA (en) | Semiconductor device | |
SG11201504507TA (en) | Semiconductor device | |
TWI562361B (en) | Semiconductor device | |
EP2717300A4 (en) | Semiconductor device | |
SG11201505099TA (en) | Semiconductor device | |
SG11201505088UA (en) | Semiconductor device | |
EP2824703A4 (en) | Semiconductor device | |
SG10201504486PA (en) | Semiconductor device with biased feature | |
TWI562360B (en) | Semiconductor device | |
EP2814059A4 (en) | Semiconductor device | |
EP2804212A4 (en) | Semiconductor device | |
EP2763160A4 (en) | Semiconductor device | |
EP2866250A4 (en) | Semiconductor device | |
EP2779225A4 (en) | Semiconductor device | |
EP2725623A4 (en) | Semiconductor device | |
EP2666841A4 (en) | Semiconductor light-emitting device | |
EP2814060A4 (en) | Semiconductor device | |
EP2752875A4 (en) | Semiconductor device | |
EP2704189A4 (en) | Semiconductor device | |
EP2720263A4 (en) | Semiconductor device | |
EP2827364A4 (en) | Semiconductor device | |
SG11201504615UA (en) | Semiconductor device | |
EP2672516A4 (en) | Semiconductor device |