TWI562534B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TWI562534B TWI562534B TW101116525A TW101116525A TWI562534B TW I562534 B TWI562534 B TW I562534B TW 101116525 A TW101116525 A TW 101116525A TW 101116525 A TW101116525 A TW 101116525A TW I562534 B TWI562534 B TW I562534B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011108736 | 2011-05-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201308888A TW201308888A (zh) | 2013-02-16 |
TWI562534B true TWI562534B (en) | 2016-12-11 |
Family
ID=47141498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101116525A TWI562534B (en) | 2011-05-13 | 2012-05-09 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US8736371B2 (zh) |
JP (1) | JP5815466B2 (zh) |
KR (1) | KR101921772B1 (zh) |
TW (1) | TWI562534B (zh) |
WO (1) | WO2012157463A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4785271B2 (ja) * | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
TWI464557B (zh) * | 2012-09-19 | 2014-12-11 | Novatek Microelectronics Corp | 負載驅動裝置及灰階電壓產生電路 |
JP6460592B2 (ja) * | 2013-07-31 | 2019-01-30 | 株式会社半導体エネルギー研究所 | Dcdcコンバータ、及び半導体装置 |
US9374048B2 (en) * | 2013-08-20 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device, and driving method and program thereof |
RU2019104946A (ru) * | 2013-12-13 | 2019-04-01 | Пьер Фабр Медикамент | Применение производного хромона в качестве антагониста дофаминового рецептора d3 для лечения расстройства аутистического спектра |
CN104935277B (zh) * | 2015-07-01 | 2017-07-21 | 东南大学 | 硅基低漏电流固支梁栅mos管乙类推挽功率放大器 |
IT201600088370A1 (it) * | 2016-08-31 | 2018-03-03 | St Microelectronics Srl | Circuito con compensazione miller, regolatore, sistema e procedimento corrispondenti |
US11899478B2 (en) | 2018-12-21 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and artificial satellite |
Citations (3)
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US6885240B2 (en) * | 2002-07-19 | 2005-04-26 | Hynix Semiconductor Inc. | Amplifying circuit with variable load drivability |
JP2008053554A (ja) * | 2006-08-25 | 2008-03-06 | Osaka Univ | 電子デバイスとその製造方法 |
TW201110242A (en) * | 2009-06-30 | 2011-03-16 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
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2012
- 2012-04-26 WO PCT/JP2012/061701 patent/WO2012157463A1/en active Application Filing
- 2012-04-26 KR KR1020137030521A patent/KR101921772B1/ko active IP Right Grant
- 2012-05-09 TW TW101116525A patent/TWI562534B/zh not_active IP Right Cessation
- 2012-05-10 US US13/468,117 patent/US8736371B2/en not_active Expired - Fee Related
- 2012-05-10 JP JP2012108215A patent/JP5815466B2/ja not_active Expired - Fee Related
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US6885240B2 (en) * | 2002-07-19 | 2005-04-26 | Hynix Semiconductor Inc. | Amplifying circuit with variable load drivability |
JP2008053554A (ja) * | 2006-08-25 | 2008-03-06 | Osaka Univ | 電子デバイスとその製造方法 |
TW201110242A (en) * | 2009-06-30 | 2011-03-16 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
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JP5815466B2 (ja) | 2015-11-17 |
KR101921772B1 (ko) | 2018-11-23 |
US20120286871A1 (en) | 2012-11-15 |
JP2012257212A (ja) | 2012-12-27 |
KR20140040128A (ko) | 2014-04-02 |
WO2012157463A1 (en) | 2012-11-22 |
TW201308888A (zh) | 2013-02-16 |
US8736371B2 (en) | 2014-05-27 |
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