JP5759369B2 - 配線工程操作のために有効な剥離剤溶液 - Google Patents
配線工程操作のために有効な剥離剤溶液 Download PDFInfo
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- JP5759369B2 JP5759369B2 JP2011516568A JP2011516568A JP5759369B2 JP 5759369 B2 JP5759369 B2 JP 5759369B2 JP 2011516568 A JP2011516568 A JP 2011516568A JP 2011516568 A JP2011516568 A JP 2011516568A JP 5759369 B2 JP5759369 B2 JP 5759369B2
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- Prior art keywords
- hydroxide
- substrate
- contacting
- release agent
- solution
- Prior art date
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- 238000011112 process operation Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 35
- 239000003795 chemical substances by application Substances 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 18
- 150000001412 amines Chemical class 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical group [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000010 aprotic solvent Substances 0.000 claims description 10
- -1 hydroxide Carbomethoxyethyl triphenylphosphonium Chemical compound 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 238000009472 formulation Methods 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 239000003880 polar aprotic solvent Substances 0.000 claims description 5
- DFQPZDGUFQJANM-UHFFFAOYSA-M tetrabutylphosphanium;hydroxide Chemical group [OH-].CCCC[P+](CCCC)(CCCC)CCCC DFQPZDGUFQJANM-UHFFFAOYSA-M 0.000 claims description 5
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 4
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- 229920000642 polymer Polymers 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
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- FEWLNYSYJNLUOO-UHFFFAOYSA-N 1-Piperidinecarboxaldehyde Chemical compound O=CN1CCCCC1 FEWLNYSYJNLUOO-UHFFFAOYSA-N 0.000 claims 4
- PYIGXCSOLWAMGG-UHFFFAOYSA-M methyl(triphenyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 PYIGXCSOLWAMGG-UHFFFAOYSA-M 0.000 claims 4
- QFZKRIMQSKCZQT-UHFFFAOYSA-M butyl(triphenyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 QFZKRIMQSKCZQT-UHFFFAOYSA-M 0.000 claims 2
- PLSLRIPNSJTWLD-UHFFFAOYSA-M dodecyl(triphenyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCCCCCCCC)C1=CC=CC=C1 PLSLRIPNSJTWLD-UHFFFAOYSA-M 0.000 claims 2
- SMSCVBBYKOFGCY-UHFFFAOYSA-M ethyl(triphenyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC)C1=CC=CC=C1 SMSCVBBYKOFGCY-UHFFFAOYSA-M 0.000 claims 2
- KSGSOLSPHHVBRO-UHFFFAOYSA-M hexadecyl(triphenyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCCCCCCCCCCCC)C1=CC=CC=C1 KSGSOLSPHHVBRO-UHFFFAOYSA-M 0.000 claims 2
- XVHQFGPOVXTXPD-UHFFFAOYSA-M tetraphenylphosphanium;hydroxide Chemical compound [OH-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 XVHQFGPOVXTXPD-UHFFFAOYSA-M 0.000 claims 2
- ZXUIDEIDTIMBRF-UHFFFAOYSA-M tributyl(hexadecyl)phosphanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[P+](CCCC)(CCCC)CCCC ZXUIDEIDTIMBRF-UHFFFAOYSA-M 0.000 claims 2
- FLNRHACWTVIBQS-UHFFFAOYSA-N triphenyl(prop-2-enyl)phosphanium Chemical compound C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC=C)C1=CC=CC=C1 FLNRHACWTVIBQS-UHFFFAOYSA-N 0.000 claims 2
- SGKOGTXWLOGBID-UHFFFAOYSA-M triphenyl(propyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCC)C1=CC=CC=C1 SGKOGTXWLOGBID-UHFFFAOYSA-M 0.000 claims 2
- MRQBNUZMZQRIOV-UHFFFAOYSA-M triphenyl(tetradecyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCCCCCCCCCC)C1=CC=CC=C1 MRQBNUZMZQRIOV-UHFFFAOYSA-M 0.000 claims 2
- WZMCFQBYCBFTBH-UHFFFAOYSA-M (2-ethoxy-2-oxoethyl)-triphenylphosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC(=O)OCC)C1=CC=CC=C1 WZMCFQBYCBFTBH-UHFFFAOYSA-M 0.000 claims 1
- CBMUUKNRCJCDOO-UHFFFAOYSA-M (2-methoxy-2-oxoethyl)-triphenylphosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC(=O)OC)C1=CC=CC=C1 CBMUUKNRCJCDOO-UHFFFAOYSA-M 0.000 claims 1
- FVRXNNOZJXVXSI-UHFFFAOYSA-M [OH-].C(=O)(OC)C1=C(C=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C Chemical compound [OH-].C(=O)(OC)C1=C(C=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C FVRXNNOZJXVXSI-UHFFFAOYSA-M 0.000 claims 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims 1
- YFERSCYFQKQZDT-UHFFFAOYSA-N phenylphosphanium hydroxide Chemical compound [OH-].C1(=CC=CC=C1)[PH3+] YFERSCYFQKQZDT-UHFFFAOYSA-N 0.000 claims 1
- ICBQNKQWOYQWLF-UHFFFAOYSA-N triphenylphosphane;hydrate Chemical compound O.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 ICBQNKQWOYQWLF-UHFFFAOYSA-N 0.000 claims 1
- 239000003039 volatile agent Substances 0.000 claims 1
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- 239000000243 solution Substances 0.000 description 62
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- 239000000463 material Substances 0.000 description 18
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- 235000012431 wafers Nutrition 0.000 description 17
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- 230000008569 process Effects 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 239000003112 inhibitor Substances 0.000 description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
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- 239000012298 atmosphere Substances 0.000 description 5
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 150000003973 alkyl amines Chemical class 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 150000004679 hydroxides Chemical group 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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- G03F7/422—Stripping or agents therefor using liquids only
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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Description
本発明は、半導体集積回路又は液晶ディスプレイのための半導体デバイス上に回路を製造するか又は電極を形成するのに用いるための配線工程(BEOL)剥離剤、新規なBEOL剥離剤を用いて製造される半導体デバイス、更にはBEOL剥離剤を用いて半導体デバイスを製造する方法、及びBEOL剥離剤の製造方法に関する。
によって表される。好ましいBEOL剥離剤溶液は、テトラメチルアンモニウムヒドロキシドを実質的に含まない。好ましBEOL剥離剤溶液に関しては、アミンは、ヒドロキシ置換アルキルアミン、及び/又はヒドロキシ置換アルキルアミンのアルキルエーテルである。特に好ましいヒドロキシ置換アルキルアミンはモノエタノールアミンであり、好ましいアミンエーテルはヒドロキシ置換アルキルアミンのメチルエーテルである。好ましいBEOL剥離剤溶液に関しては、極性で非プロトン性の溶媒はジメチルスルホキシド(DMSO)である。DMSOの濃度は約20%〜約95%の範囲であってよいが、好ましいBEOL溶液においては、非プロトン性溶媒の濃度は、一般に約40〜約90重量%、より好ましくは約55〜約90重量%の範囲である。好ましい溶液に関する含水量は、一般に約2〜約15重量%の範囲である。しかしながら、水の最適量は、他の成分の選択及びそれらの割合によって変動する可能性がある。ここで記載するBEOL剥離剤溶液はBEOL用途のために最適化されているが、これらの剥離剤溶液は、(i)高濃度注入レジスト除去;(ii)ゲート形成におけるエッチ後残渣、(iii)浮遊ゲート形成におけるエッチ後残渣、及び(iv)再加工用途など(しかしながらこれらに限定されない)の種々の他の標準的な用途において、フォトレジスト、エッチ残渣などを除去するために用いることができる。
を有する第4級水酸化物が挙げられる。容器としては、剥離剤溶液を保持することができる実質的に全ての容器を挙げることができ、液体製品を輸送又は移送するために用いられる通常の容器、フォトレジスト及び/又はエッチ残渣を除去するために基材を処理するのに用いるための剥離剤溶液を含ませるのに用いられる装置が挙げられる。ここで用いる容器には、基材の処理中に剥離剤溶液を保持及び/又は移送するのに用いる装置が含まれ、剥離剤溶液を移送するのに用いる任意の配管系を含む保持及び移送容器が挙げられるが、これに限定されない。
によって表される第4級水酸化物を含む。BEOL剥離剤溶液にはまた、アルカノールアミン、又はアルカノールアミンのアルキルエーテルを含ませることもできる。好ましい第4級水酸化物としては、テトラブチルアンモニウムヒドロキシド、及びテトラブチルホスホニウムヒドロキシドが挙げられる。特に好ましいBEOL剥離剤溶液はまた、テトラメチルアンモニウムヒドロキシド(TMAH)を実質的に含まない。約0.5%未満のTMAHを含む剥離剤溶液は、TMAHを実質的に含まないとみなされる。
以下の実施例において試験する配合物に関する成分を室温において撹拌しながら配合して、100gの均一な剥離剤溶液を与えた。超低κ黒ダイヤII中に形成されたビア及び溝のパターンを有するパターン化試験ウエハを得た。この試験ウエハには未だそれらのフォトレジスト積層体が存在しており、超低κ黒ダイヤII中にパターンを転写した後に更に清浄化又は処理してはいなかった。パターン化試験ウエハを約4cm×3cmの片に切り取り、小型ウエハホルダー中に載置した。
上記に記載のようにして入手して調製した試験試料を、剥離剤溶液の試験試料中に、1、2、3、及び4分間の間浸漬し、上記に記載のようにして清浄化に関して評価した。幾つかの異なる剥離剤溶液に関する結果を下表1に与える。表1において示されるように、アルカノールアミン又はそのエーテルを含ませることによって清浄化性能を向上させることができ、特定のアルカノールアミン及びその濃度を選択することによって剥離剤溶液の清浄化性能に更に影響を与えることができる。
表2に示すように、剥離剤溶液に種々の量のテトラメチルアンモニウムヒドロキシドを加えると清浄化プロセスが妨げられ、幾つかの場合においては低κ誘電体がエッチングされた。
表3に与えるデータは、(a)水を含まない剥離剤溶液は性能が劣っていた;(b)若干の水を加えると溶液の清浄化性能が向上した;及び(c)過度に多い水を加えるとより長い接触時間によって低κ誘電体のエッチングが起こった;ことを示す。
温度の関数としての清浄化性能に関する情報を下表4に与える。
テトラブチルホスホニウムヒドロキシドを含む剥離剤溶液は有効な清浄化を示し、低κ誘電体に対して僅かな影響しか示さなかった。更に、他の第4級ホスホニウムヒドロキシドを用いて清浄化性能を最適にすることができる。
表6に示すように、剥離剤溶液に第2の極性で非プロトン性の溶媒を含ませて所望の清浄化レベルを保持することができる。
新しい黒ダイヤII(BDII)のブランケットウエハを約1”×1”の試料に切り出した。この試料をまず250℃のオーブン中に30分間配置して、剥離剤溶液中に浸漬する前に、堆積時にそれらが有する低い誘電率値(κa)を得ることを確保した。結果を記録した。次に、実施例5(c)において記載した配合物中に、65℃において60秒間試料を浸漬し、取り出し、水及びイソプロピルアルコールですすぎ、乾燥した。誘電率の測定を行い、結果を記録して低誘電率値κbを与えた。次に、乾燥した試料を、250℃に保持したオーブン内に30分間配置した。誘電率の測定を行い、結果を記録した(κc)。(全ての誘電率値は、Materials Development Corporation, Chatsworth, CA, www.mdc4cv.comからのMercury Probeモデル820B上で測定し、結果を記録した)。この手順から得られた代表的な値の組は、κa=2.40;κb=2.87;及びκc=2.49を含む。したがって、揮発性物質を除去することによって得られる低誘電率値の変動量(Δκ)は、2.49−2.40、則ち0.09である。揮発性物質を除去しない場合には、低誘電率値の変動量(Δκ)は、2.87―2.40、則ち0.47になる。Δκを≦0.1に保持することは、低κDBIIを用いる半導体製造プロセスにおける成功実現のために必要である。
Claims (21)
- 剥離剤溶液がグリセリンを更に含み、極性で非プロトン性の溶媒がジメチルスルホキシド及び1−ホルミルピペリジンからなる群から選択される、請求項1に記載の剥離剤溶液。
- 非プロトン性溶媒が組成物の40%〜90%を構成し;アミンが組成物の2%〜60%を構成する、請求項1に記載の剥離剤溶液。
- 非プロトン性溶媒がジメチルスルホキシドである、請求項3に記載の剥離剤溶液。
- アミンが、少なくとも2つの炭素原子、少なくとも1つのアミノ置換基、及び少なくとも1つのヒドロキシル置換基を有し、アミノ及びヒドロキシル置換基が異なる炭素原子に結合しているアルカノールアミンである、請求項3に記載の剥離剤溶液。
- 第4級水酸化物が、テトラブチルホスホニウムヒドロキシド、テトラフェニルホスホニウムヒドロキシド、メチルトリフェニルホスホニウムヒドロキシド、エチルトリフェニルホスホニウムヒドロキシド、プロピルトリフェニルホスホニウムヒドロキシド、ブチルトリフェニルホスホニウムヒドロキシド、ベンジルトリフェニルホスホニウムヒドロキシド、アリルトリフェニルホスホニウムヒドロキシド、ドデシルトリフェニルホスホニウムヒドロキシド、テトラデシルトリフェニルホスホニウムヒドロキシド、ヘキサデシルトリフェニルホスホニウムヒドロキシド、ヘキサデシルトリブチルホスホニウムヒドロキシド、カルボエトキシエチルトリフェニルホスホニウムヒドロキシド、カルボメトキシエチルトリフェニルホスホニウムヒドロキシド、カルボエトキシメチルトリフェニルホスホニウムヒドロキシド、及びカルボメトキシメチルトリフェニルホスホニウムヒドロキシドからなる群から選択される、請求項3に記載の剥離剤溶液。
- 第4級水酸化物が、テトラブチルホスホニウムヒドロキシドである、請求項6に記載の剥離剤溶液。
- 剥離剤溶液がテトラメチルアンモニウムヒドロキシドを含まない、請求項3に記載の剥離剤溶液。
- 基材を剥離剤溶液と接触させることが、基材を、組成物の40%〜90%を構成する極性で非プロトン性の溶媒;組成物の2%〜10%を構成する水;組成物の1%〜10%を構成する第4級水酸化物;及び組成物の2%〜65%を構成するアミン;
を含む剥離剤溶液と接触させることを含む、請求項9に記載の方法。 - 基材を剥離剤溶液と接触させることが、基材を、極性で非プロトン性の溶媒がジメチルスルホキシドである剥離剤溶液と接触させることを含む、請求項10に記載の方法。
- 基材を剥離剤溶液と接触させることが、基材を、極性で非プロトン性の溶媒が1−ホルミルピペリジンである剥離剤溶液と接触させることを含む、請求項10に記載の方法。
- 基材を剥離剤溶液と接触させることが、基材を、少なくとも2つの炭素原子、少なくとも1つのアミノ置換基、及び少なくとも1つのヒドロキシル置換基を有し、アミノ及びヒドロキシル置換基が異なる炭素原子に結合しているアルカノールアミンを含むアミンを含む剥離剤溶液と接触させることを含む、請求項9に記載の方法。
- 基材を剥離剤溶液と接触させることが、基材を、テトラブチルホスホニウムヒドロキシド、テトラフェニルホスホニウムヒドロキシド、メチルトリフェニルホスホニウムヒドロキシド、エチルトリフェニルホスホニウムヒドロキシド、プロピルトリフェニルホスホニウムヒドロキシド、ブチルトリフェニルホスホニウムヒドロキシド、ベンジルトリフェニルホスホニウムヒドロキシド、アリルトリフェニルホスホニウムヒドロキシド、ドデシルトリフェニルホスホニウムヒドロキシド、テトラデシルトリフェニルホスホニウムヒドロキシド、ヘキサデシルトリフェニルホスホニウムヒドロキシド、ヘキサデシルトリブチルホスホニウムヒドロキシド、カルボエトキシエチルトリフェニルホスホニウムヒドロキシド、カルボメトキシエチルトリフェニルホスホニウムヒドロキシド、カルボエトキシメチルトリフェニルホスホニウムヒドロキシド、及びカルボメトキシメチルトリフェニルホスホニウムヒドロキシドからなる群から選択される第4級水酸化物を有する剥離剤溶液と接触させることを含む、請求項9に記載の方法。
- 基材を剥離剤溶液と接触させることが、基材を剥離剤溶液中に撹拌しながら少なくとも40℃の温度で浸漬することを含む、請求項9に記載の方法。
- 基材を剥離剤溶液と接触させることが剥離剤溶液を基材上に噴霧することを含み、剥離剤溶液が少なくとも40℃の温度である、請求項9に記載の方法。
- 基材を剥離剤溶液と接触させることが、基材を、テトラメチルアンモニウムヒドロキシドを含まない剥離剤溶液と接触させることを含む、請求項9に記載の方法。
- その上にレジストを有する基材を提供することが、2つのポリマー層を有する二層レジストであるレジストを有する基材を提供することを含む、請求項9に記載の方法。
- その上にレジストを有する基材を提供することが、1つの無機層及び1つのポリマー層を有する二層レジストであるレジストを有する基材を提供することを含む、請求項9に記載の方法。
- 基材から吸着揮発性物質を除去して処理された基材を得る工程を更に含み;
基材を提供することが、κaとして規定される低κ誘電率値を有する基材を提供することを含み;処理された基材を得ることが、κcとして規定される低κ誘電率値を有する処理された基材を得ることを含み;
Δκ≦0.1(ここでΔκはκcとκaとの間の差と定義される)である、請求項9に記載の方法。
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
KR101089211B1 (ko) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물 |
US20130053291A1 (en) * | 2011-08-22 | 2013-02-28 | Atsushi Otake | Composition for cleaning substrates post-chemical mechanical polishing |
US9158202B2 (en) * | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
JP6165665B2 (ja) * | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
EP3220409B1 (en) * | 2014-11-13 | 2020-08-05 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning solution that suppresses damage to cobalt, and method for cleaning semiconductor element using same |
JP6556834B2 (ja) * | 2015-04-10 | 2019-08-07 | 富士フイルム株式会社 | レジスト除去液、レジスト除去方法、再生半導体基板の製造方法 |
US10072237B2 (en) | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
TWI692679B (zh) * | 2017-12-22 | 2020-05-01 | 美商慧盛材料美國責任有限公司 | 光阻剝除劑 |
US11353794B2 (en) | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
EP3502225B1 (en) * | 2017-12-22 | 2021-09-01 | Versum Materials US, LLC | Photoresist stripper |
US10658589B2 (en) * | 2018-06-27 | 2020-05-19 | International Business Machines Corporation | Alignment through topography on intermediate component for memory device patterning |
JP7220040B2 (ja) * | 2018-09-20 | 2023-02-09 | 関東化学株式会社 | 洗浄液組成物 |
Family Cites Families (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL123441C (ja) * | 1964-01-17 | |||
US3562038A (en) * | 1968-05-15 | 1971-02-09 | Shipley Co | Metallizing a substrate in a selective pattern utilizing a noble metal colloid catalytic to the metal to be deposited |
US3673099A (en) * | 1970-10-19 | 1972-06-27 | Bell Telephone Labor Inc | Process and composition for stripping cured resins from substrates |
US3920695A (en) * | 1972-07-26 | 1975-11-18 | Minnesota Mining & Mfg | Silicone-compatible indigo dyestuffs |
US3981859A (en) | 1972-07-26 | 1976-09-21 | Minnesota Mining And Manufacturing Company | Silicone-compatible azo dyestuffs |
US4038293A (en) * | 1972-07-26 | 1977-07-26 | Minnesota Mining And Manufacturing Company | Silicone-compatible tris(trimethylsilyloxy)silylalkylamino-substituted quinoncid dyestuffs |
US3888891A (en) * | 1972-07-26 | 1975-06-10 | Minnesota Mining & Mfg | Silicone-compatible dyestuffs |
US3981889A (en) * | 1973-06-04 | 1976-09-21 | Ogawa & Co., Ltd. | Method of manufacturing cis,cis-2,4,6-triisopropyl-1,3,5-trioxane |
US3963744A (en) * | 1974-08-28 | 1976-06-15 | Minnesota Mining And Manufacturing Company | Silicone-compatible phthalocyanine dyestuffs |
JPS58139430A (ja) * | 1982-02-15 | 1983-08-18 | Toray Ind Inc | レジストの剥離法 |
US4547271A (en) * | 1984-09-12 | 1985-10-15 | Canada Packers Inc. | Process for the electrochemical reduction of 7-ketolithocholic acid to ursodeoxycholic acid |
DE3529960A1 (de) * | 1985-08-22 | 1987-03-05 | Boehringer Ingelheim Kg | Aminosaeure-derivate, verfahren zu ihrer herstellung und verwendung |
JPS63215041A (ja) | 1987-03-04 | 1988-09-07 | Toshiba Corp | 結晶欠陥評価用エツチング液 |
US4830641A (en) * | 1987-04-13 | 1989-05-16 | Pall Corporation | Sorbing apparatus |
ATE142653T1 (de) | 1989-12-29 | 1996-09-15 | Lucky Ltd | Verfahren zur herstellung von hitzebeständigem und transparentem acrylharz |
US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
RU1807077C (ru) | 1990-10-26 | 1993-04-07 | Войсковая часть 75360 | Моюще-дезинфицирующее средство дл очистки поверхности от загр знений |
US6187730B1 (en) * | 1990-11-05 | 2001-02-13 | Ekc Technology, Inc. | Hydroxylamine-gallic compound composition and process |
JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
US5928430A (en) * | 1991-01-25 | 1999-07-27 | Advanced Scientific Concepts, Inc. | Aqueous stripping and cleaning compositions containing hydroxylamine and use thereof |
US5117063A (en) * | 1991-06-21 | 1992-05-26 | Monsanto Company | Method of preparing 4-aminodiphenylamine |
US5304284A (en) * | 1991-10-18 | 1994-04-19 | International Business Machines Corporation | Methods for etching a less reactive material in the presence of a more reactive material |
US5468423A (en) | 1992-02-07 | 1995-11-21 | The Clorox Company | Reduced residue hard surface cleaner |
US5252737A (en) * | 1992-05-22 | 1993-10-12 | Monsanto Company | Process for preparing N-aliphatic substituted p-phenylenediamines |
US7144848B2 (en) * | 1992-07-09 | 2006-12-05 | Ekc Technology, Inc. | Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal |
US6825156B2 (en) | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US5233010A (en) * | 1992-10-15 | 1993-08-03 | Monsanto Company | Process for preparing isocyanate and carbamate ester products |
US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
EP0609496B1 (de) * | 1993-01-19 | 1998-04-15 | Siemens Aktiengesellschaft | Verfahren zur Herstellung einer Kontakte und diese verbindende Leiterbahnen umfassenden Metallisierungsebene |
JP2951215B2 (ja) | 1993-09-10 | 1999-09-20 | レイセオン・カンパニー | 位相マスクレーザによる微細なパターンの電子相互接続構造の製造方法 |
US5419779A (en) * | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
GB9425031D0 (en) * | 1994-12-09 | 1995-02-08 | Alpha Metals Ltd | Printed circuit board manufacture |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US6900193B1 (en) * | 1996-05-01 | 2005-05-31 | The United States Of America As Represented By The Department Of Health And Human Services | Structural modification of 19-norprogesterone I: 17-α-substituted-11-β-substituted-4-aryl and 21-substituted 19-norpregnadienedione as new antiprogestational agents |
US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6033996A (en) * | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
JPH11316465A (ja) * | 1998-03-03 | 1999-11-16 | Tokyo Ohka Kogyo Co Ltd | アッシング後の処理液およびこれを用いた処理方法 |
US6063522A (en) * | 1998-03-24 | 2000-05-16 | 3M Innovative Properties Company | Electrolytes containing mixed fluorochemical/hydrocarbon imide and methide salts |
AU4189599A (en) * | 1998-05-18 | 1999-12-06 | Mallinckrodt, Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US6200891B1 (en) * | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
JP4224651B2 (ja) * | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
US6566322B1 (en) * | 1999-05-27 | 2003-05-20 | Mcmaster University | Chelating silicone polymers |
US6399273B1 (en) * | 1999-08-13 | 2002-06-04 | Board Of Regents, University Of Texas System | Water-processable photoresist compositions |
KR100335011B1 (ko) * | 1999-08-19 | 2002-05-02 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
KR100298572B1 (ko) * | 1999-08-19 | 2001-09-22 | 박찬구 | 카바아닐라이드로부터 4-니트로디페닐아민과 4-니트로소디페닐아민의 제조방법 |
JP2001100436A (ja) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
JP3339575B2 (ja) * | 2000-01-25 | 2002-10-28 | 日本電気株式会社 | 剥離剤組成物および剥離方法 |
US6475966B1 (en) | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
US6531436B1 (en) * | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
US6319835B1 (en) | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
JP2001244258A (ja) * | 2000-02-29 | 2001-09-07 | Sumitomo Bakelite Co Ltd | 半導体用有機絶縁膜形成方法 |
US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
CN1218222C (zh) * | 2000-07-10 | 2005-09-07 | Ekc技术公司 | 用于清洁半导体设备上有机残余物和等离子蚀刻残余物的组合物 |
US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
JP3738996B2 (ja) | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
JP2003005383A (ja) * | 2000-11-30 | 2003-01-08 | Tosoh Corp | レジスト剥離剤 |
KR100822236B1 (ko) * | 2000-11-30 | 2008-04-16 | 토소가부시키가이샤 | 레지스트 박리제 |
US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
US6482656B1 (en) | 2001-06-04 | 2002-11-19 | Advanced Micro Devices, Inc. | Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit |
JP4810764B2 (ja) * | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
KR20040032855A (ko) * | 2001-07-13 | 2004-04-17 | 이케이씨 테크놀로지, 인코포레이티드 | 술폭시드 피롤리드(인)온 알칸올아민 박리 및 세정 조성물 |
US6683219B2 (en) * | 2001-07-30 | 2004-01-27 | Wisconsin Alumni Research Foundation | Synthesis of A-ring synthon of 19-nor-1α,25-dihydroxyvitamin D3 from (D)-glucose |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
WO2003038529A1 (fr) * | 2001-11-02 | 2003-05-08 | Mitsubishi Gas Chemical Company, Inc. | Procede de liberation de resist |
US7064087B1 (en) * | 2001-11-15 | 2006-06-20 | Novellus Systems, Inc. | Phosphorous-doped silicon dioxide process to customize contact etch profiles |
US7543592B2 (en) * | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
JP3738992B2 (ja) | 2001-12-27 | 2006-01-25 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
KR101017738B1 (ko) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
US6878500B2 (en) * | 2002-04-06 | 2005-04-12 | Marlborough, | Stripping method |
US6911293B2 (en) * | 2002-04-11 | 2005-06-28 | Clariant Finance (Bvi) Limited | Photoresist compositions comprising acetals and ketals as solvents |
AU2003225178A1 (en) * | 2002-04-24 | 2003-11-10 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
JP3516446B2 (ja) * | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
KR100649418B1 (ko) * | 2002-08-22 | 2006-11-27 | 다이킨 고교 가부시키가이샤 | 박리액 |
JP2004093678A (ja) | 2002-08-29 | 2004-03-25 | Jsr Corp | フォトレジスト用剥離液組成物 |
JP2004101849A (ja) * | 2002-09-09 | 2004-04-02 | Mitsubishi Gas Chem Co Inc | 洗浄剤組成物 |
KR100974034B1 (ko) | 2002-11-08 | 2010-08-04 | 와코 쥰야꾸 고교 가부시키가이샤 | 세정액 및 이것을 이용한 세정방법 |
US6872663B1 (en) * | 2002-11-22 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for reworking a multi-layer photoresist following an underlayer development |
US7166362B2 (en) * | 2003-03-25 | 2007-01-23 | Fuji Photo Film Co., Ltd. | Film-forming composition, production process therefor, and porous insulating film |
US6846748B2 (en) * | 2003-05-01 | 2005-01-25 | United Microeletronics Corp. | Method for removing photoresist |
DE602004030188D1 (de) | 2003-06-27 | 2011-01-05 | Toyo Ink Mfg Co | Nichtwässrige Tintenstrahldruckertinte |
TWI282377B (en) * | 2003-07-25 | 2007-06-11 | Mec Co Ltd | Etchant, replenishment solution and method for producing copper wiring using the same |
US7615377B2 (en) * | 2003-09-05 | 2009-11-10 | Massachusetts Institute Of Technology | Fluorescein-based metal sensors |
US7834043B2 (en) * | 2003-12-11 | 2010-11-16 | Abbott Laboratories | HIV protease inhibiting compounds |
US20060003910A1 (en) * | 2004-06-15 | 2006-01-05 | Hsu Jiun Y | Composition and method comprising same for removing residue from a substrate |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
JP4718145B2 (ja) * | 2004-08-31 | 2011-07-06 | 富士通株式会社 | 半導体装置及びゲート電極の製造方法 |
US20060073997A1 (en) * | 2004-09-30 | 2006-04-06 | Lam Research Corporation | Solutions for cleaning silicon semiconductors or silicon oxides |
JP2006106616A (ja) * | 2004-10-08 | 2006-04-20 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト除去用処理液および基板の処理方法 |
US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US7922823B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
KR100621310B1 (ko) * | 2005-05-16 | 2006-09-06 | 금호석유화학 주식회사 | 4-아미노디페닐아민의 제조방법 |
US7700533B2 (en) | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
US20070243773A1 (en) * | 2005-10-28 | 2007-10-18 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
JP2009515055A (ja) * | 2005-11-09 | 2009-04-09 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 低k誘電体材料をその上に有する半導体ウェハをリサイクルするための組成物および方法 |
US7674755B2 (en) * | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
US8288330B2 (en) * | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
US8093150B2 (en) * | 2006-09-19 | 2012-01-10 | Infineon Technologies Ag | Methods of manufacturing semiconductor devices and structures thereof |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
US20100104824A1 (en) * | 2006-10-23 | 2010-04-29 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists |
US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
US7655608B2 (en) * | 2007-08-03 | 2010-02-02 | Dynaloy, Llc | Reduced metal etch rates using stripper solutions containing a copper salt |
US8551682B2 (en) * | 2007-08-15 | 2013-10-08 | Dynaloy, Llc | Metal conservation with stripper solutions containing resorcinol |
US20090119979A1 (en) * | 2007-11-08 | 2009-05-14 | Imperial Petroleum, Inc. | Catalysts for production of biodiesel fuel and glycerol |
EP2371809A4 (en) | 2008-12-26 | 2015-09-02 | Knc Lab Co Ltd | PROCESS FOR PRODUCING CONCENTRATED SOLUTION FOR PHOTOSENSITIVE RESIN STRIPPING AGENT HAVING A LOW WATER CONTENT |
JP6066552B2 (ja) * | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
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- 2009-06-24 JP JP2011516568A patent/JP5759369B2/ja not_active Expired - Fee Related
- 2009-06-24 KR KR1020107029182A patent/KR101704045B1/ko active IP Right Grant
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- 2009-06-24 US US12/490,654 patent/US8440389B2/en active Active
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US20130161840A1 (en) | 2013-06-27 |
TW201013336A (en) | 2010-04-01 |
KR101704045B1 (ko) | 2017-02-07 |
JP2015143859A (ja) | 2015-08-06 |
US20100221503A1 (en) | 2010-09-02 |
US8440389B2 (en) | 2013-05-14 |
WO2010008877A1 (en) | 2010-01-21 |
JP2011525641A (ja) | 2011-09-22 |
JP5876948B2 (ja) | 2016-03-02 |
TWI450052B (zh) | 2014-08-21 |
KR20110043543A (ko) | 2011-04-27 |
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