JP5748877B1 - 抵抗変化型メモリ - Google Patents

抵抗変化型メモリ Download PDF

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JP5748877B1
JP5748877B1 JP2014045328A JP2014045328A JP5748877B1 JP 5748877 B1 JP5748877 B1 JP 5748877B1 JP 2014045328 A JP2014045328 A JP 2014045328A JP 2014045328 A JP2014045328 A JP 2014045328A JP 5748877 B1 JP5748877 B1 JP 5748877B1
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variable resistance
voltage
common source
resistance element
pair
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Japanese (ja)
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JP2015170377A (ja
Inventor
克年 水藤
克年 水藤
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ウィンボンド エレクトロニクス コーポレーション
ウィンボンド エレクトロニクス コーポレーション
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Priority to JP2014045328A priority Critical patent/JP5748877B1/ja
Priority to TW103135457A priority patent/TWI533298B/zh
Priority to CN201410603605.XA priority patent/CN104900261B/zh
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Publication of JP5748877B1 publication Critical patent/JP5748877B1/ja
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JP2014045328A 2014-03-07 2014-03-07 抵抗変化型メモリ Active JP5748877B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014045328A JP5748877B1 (ja) 2014-03-07 2014-03-07 抵抗変化型メモリ
TW103135457A TWI533298B (zh) 2014-03-07 2014-10-14 可變電阻式記憶體及其寫入方法
CN201410603605.XA CN104900261B (zh) 2014-03-07 2014-10-31 可变电阻式存储器及其写入方法

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JP2014045328A JP5748877B1 (ja) 2014-03-07 2014-03-07 抵抗変化型メモリ

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JP5748877B1 true JP5748877B1 (ja) 2015-07-15
JP2015170377A JP2015170377A (ja) 2015-09-28

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JP (1) JP5748877B1 (zh)
CN (1) CN104900261B (zh)
TW (1) TWI533298B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777272B2 (en) 2018-02-14 2020-09-15 Winbond Electronics Corp. Semiconductor memory device
US10943660B2 (en) 2019-02-28 2021-03-09 Winbond Electronics Corp. Resistive memory
US11222923B2 (en) 2019-01-16 2022-01-11 Winbond Electronics Corp. Resistance variable memory

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6753104B2 (ja) * 2016-03-28 2020-09-09 日本電気株式会社 相補型スイッチユニットのプログラム方法、および半導体装置
JP6430576B2 (ja) 2017-04-19 2018-11-28 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ
JP2019053804A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体記憶装置
CN114678047A (zh) * 2020-12-24 2022-06-28 浙江驰拓科技有限公司 一种存储计算阵列以及一种数据读写计算方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7606059B2 (en) * 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
TWI355661B (en) * 2003-12-18 2012-01-01 Panasonic Corp Method for using a variable-resistance material as
JP5092001B2 (ja) * 2010-09-29 2012-12-05 株式会社東芝 半導体集積回路
KR101797106B1 (ko) * 2010-10-26 2017-11-13 삼성전자주식회사 저항성 메모리 장치와 상기 저항성 메모리 장치를 포함하는 전자 장치들
JP5867704B2 (ja) * 2011-12-21 2016-02-24 凸版印刷株式会社 不揮発性メモリセルアレイ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777272B2 (en) 2018-02-14 2020-09-15 Winbond Electronics Corp. Semiconductor memory device
US11222923B2 (en) 2019-01-16 2022-01-11 Winbond Electronics Corp. Resistance variable memory
US10943660B2 (en) 2019-02-28 2021-03-09 Winbond Electronics Corp. Resistive memory

Also Published As

Publication number Publication date
TWI533298B (zh) 2016-05-11
JP2015170377A (ja) 2015-09-28
CN104900261B (zh) 2017-08-11
CN104900261A (zh) 2015-09-09
TW201535365A (zh) 2015-09-16

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