JP5747922B2 - 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法 - Google Patents

太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法 Download PDF

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JP5747922B2
JP5747922B2 JP2012556782A JP2012556782A JP5747922B2 JP 5747922 B2 JP5747922 B2 JP 5747922B2 JP 2012556782 A JP2012556782 A JP 2012556782A JP 2012556782 A JP2012556782 A JP 2012556782A JP 5747922 B2 JP5747922 B2 JP 5747922B2
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transparent film
sputtering target
sio
powder
zno
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JPWO2012108157A1 (ja
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山口　剛
山口　　剛
張　守斌
守斌 張
佑一 近藤
佑一 近藤
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Mitsubishi Materials Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/604—Pressing at temperatures other than sintering temperatures
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    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Photovoltaic Devices (AREA)
JP2012556782A 2011-02-10 2012-02-03 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法 Expired - Fee Related JP5747922B2 (ja)

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JP2011026642 2011-02-10
JP2011026642 2011-02-10
JP2012556782A JP5747922B2 (ja) 2011-02-10 2012-02-03 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法
PCT/JP2012/000734 WO2012108157A1 (ja) 2011-02-10 2012-02-03 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法

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JP (2) JP5747922B2 (ko)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015163741A (ja) * 2011-02-10 2015-09-10 三菱マテリアル株式会社 透明膜形成用スパッタリングターゲットおよびその製造方法

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JP5892016B2 (ja) * 2012-09-19 2016-03-23 住友金属鉱山株式会社 酸化亜鉛スパッタリングターゲットとその製造方法
WO2014069367A1 (ja) * 2012-10-30 2014-05-08 Jx日鉱日石金属株式会社 導電性酸化物焼結体及び該導電性酸化物を用いた低屈折率膜
JP6024545B2 (ja) * 2013-03-19 2016-11-16 住友金属鉱山株式会社 酸化亜鉛系焼結体とその製造方法およびスパッタリングターゲット
KR102000856B1 (ko) * 2015-02-27 2019-07-16 제이엑스금속주식회사 산화물 소결체, 산화물 스퍼터링 타깃 및 산화물 박막
DE102016215485A1 (de) 2015-08-21 2017-02-23 Yazaki Corporation Energieübertragende Kommunikationseinheit und energieübertragende Kommunikationsvorrichtung
JP6537715B2 (ja) * 2017-03-15 2019-07-03 Ｊｘ金属株式会社 Ａｌ２Ｏ３スパッタリングターゲット及びその製造方法
CN107522484A (zh) * 2017-06-26 2017-12-29 广西新未来信息产业股份有限公司 一种氧化锌铝靶材的制备方法
WO2021079947A1 (ja) * 2019-10-23 2021-04-29 三菱マテリアル株式会社 酸化物スパッタリングターゲット

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JPH08111123A (ja) * 1994-08-17 1996-04-30 Asahi Glass Co Ltd 透明導電膜とその製造方法およびスパッタリングターゲット
JPH11236219A (ja) * 1998-02-20 1999-08-31 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製法
JPH11322332A (ja) * 1998-05-21 1999-11-24 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製造方法
JP2000040429A (ja) * 1998-07-24 2000-02-08 Sumitomo Metal Mining Co Ltd 酸化亜鉛系透明導電膜の製造方法
JP2000119062A (ja) * 1998-02-16 2000-04-25 Japan Energy Corp 光透過膜及び光透過膜形成用スパッタリングタ―ゲット
JP2004353044A (ja) * 2003-05-29 2004-12-16 Sumitomo Metal Mining Co Ltd スパッタリングターゲットの製造方法
WO2006129410A1 (ja) * 2005-05-30 2006-12-07 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット及びその製造方法
JP2007311041A (ja) * 2006-05-16 2007-11-29 Bridgestone Corp 結晶性ＺｎＯ系透明導電薄膜の成膜方法、結晶性ＺｎＯ系透明導電薄膜及びフィルム、並びに抵抗膜式タッチパネル
JP2007327079A (ja) * 2006-06-06 2007-12-20 Sony Corp 透明導電積層膜及びその製造方法
WO2009078329A1 (ja) * 2007-12-19 2009-06-25 Hitachi Metals, Ltd. 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、電極
WO2009078330A1 (ja) * 2007-12-19 2009-06-25 Hitachi Metals, Ltd. 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、このスパッタリングターゲットを用いて形成された電極

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JPH07235684A (ja) 1994-02-23 1995-09-05 Hitachi Cable Ltd 太陽電池
JP4257443B2 (ja) 2000-03-10 2009-04-22 本田技研工業株式会社 太陽電池およびその製造方法
JP2007176706A (ja) * 2005-12-26 2007-07-12 Mitsui Mining & Smelting Co Ltd 酸化物焼結体及びその製造方法並びにスパッタリングターゲット及び透明導電膜
JP4920540B2 (ja) * 2007-09-26 2012-04-18 ブリヂストンフローテック株式会社 把持装置
WO2012108157A1 (ja) * 2011-02-10 2012-08-16 三菱マテリアル株式会社 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111123A (ja) * 1994-08-17 1996-04-30 Asahi Glass Co Ltd 透明導電膜とその製造方法およびスパッタリングターゲット
JP2000119062A (ja) * 1998-02-16 2000-04-25 Japan Energy Corp 光透過膜及び光透過膜形成用スパッタリングタ―ゲット
JPH11236219A (ja) * 1998-02-20 1999-08-31 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製法
JPH11322332A (ja) * 1998-05-21 1999-11-24 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製造方法
JP2000040429A (ja) * 1998-07-24 2000-02-08 Sumitomo Metal Mining Co Ltd 酸化亜鉛系透明導電膜の製造方法
JP2004353044A (ja) * 2003-05-29 2004-12-16 Sumitomo Metal Mining Co Ltd スパッタリングターゲットの製造方法
WO2006129410A1 (ja) * 2005-05-30 2006-12-07 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット及びその製造方法
JP2007311041A (ja) * 2006-05-16 2007-11-29 Bridgestone Corp 結晶性ＺｎＯ系透明導電薄膜の成膜方法、結晶性ＺｎＯ系透明導電薄膜及びフィルム、並びに抵抗膜式タッチパネル
JP2007327079A (ja) * 2006-06-06 2007-12-20 Sony Corp 透明導電積層膜及びその製造方法
WO2009078329A1 (ja) * 2007-12-19 2009-06-25 Hitachi Metals, Ltd. 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、電極
WO2009078330A1 (ja) * 2007-12-19 2009-06-25 Hitachi Metals, Ltd. 酸化亜鉛焼結体およびその製造方法、スパッタリングターゲット、このスパッタリングターゲットを用いて形成された電極

Cited By (1)

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