JPWO2012108157A1 - 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法 - Google Patents
太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法 Download PDFInfo
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 37
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 33
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 29
- 239000011812 mixed powder Substances 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 abstract description 30
- 239000000203 mixture Substances 0.000 abstract description 11
- 238000007731 hot pressing Methods 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 3
- 229910052725 zinc Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910052844 willemite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 76
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 67
- 239000011787 zinc oxide Substances 0.000 description 33
- 239000011701 zinc Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 230000002159 abnormal effect Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
Description
燥後、例えば目開き:250μmの篩にかけて造粒し、さらに真空乾燥後、例えば1200℃にて5時間、200kgf/cm2の圧力で真空中でホットプレスし、焼結体とする。なお、ホットプレス温度は、1100〜1250℃の範囲が好ましく、圧力は、150〜350kgf/cm2の範囲が好ましい。 このようにホットプレスした焼結体は、通常放電加工、切削または研削工法を用いて、ターゲットの指定形状に機械加工し、加工後のターゲットをInを半田として、CuまたはSUS(ステンレス)またはその他金属(例えば、Mo)からなるバッキングプレートにボンディングし、スパッタに供する。
Claims (4)
- 全金属成分量に対してAl:0.3〜4.0wt%、Si:6.0〜14.5wt%を含有し、残部がZnおよび不可避不純物からなる成分組成を有した酸化物焼結体からなり、 該焼結体の組織中に複合酸化物Zn2SiO4とZnOとが存在することを特徴とする太陽電池用透明膜形成用スパッタリングターゲット。
- 請求項1に記載の太陽電池用透明膜形成用スパッタリングターゲットにおいて、 前記焼結体の密度が、理論密度比で100〜108%であることを特徴とする太陽電池用透明膜形成用スパッタリングターゲット。
- 請求項1に記載の太陽電池用透明膜形成用スパッタリングターゲットにおいて、 バルク抵抗値が、1Ω・cm以下であることを特徴とする太陽電池用透明膜形成用スパッタリングターゲット。
- 請求項1に記載の太陽電池用透明膜形成用スパッタリングターゲットを作製する方法であって、 Al2O3粉末とSiO2粉末とZnO粉末とを、Al2O3:0.5〜5.0wt%、SiO2:10〜22wt%、残部:ZnOおよび不可避不純物からなるように混合して混合粉末とする工程と、 前記混合粉末を真空中でホットプレスにて焼結する工程とを有していることを特徴とする太陽電池用透明膜形成用スパッタリングターゲットの製造方法。
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CN107522484A (zh) * | 2017-06-26 | 2017-12-29 | 广西新未来信息产业股份有限公司 | 一种氧化锌铝靶材的制备方法 |
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WO2012108157A1 (ja) * | 2011-02-10 | 2012-08-16 | 三菱マテリアル株式会社 | 太陽電池用透明膜形成用スパッタリングターゲットおよびその製造方法 |
JP5892016B2 (ja) * | 2012-09-19 | 2016-03-23 | 住友金属鉱山株式会社 | 酸化亜鉛スパッタリングターゲットとその製造方法 |
WO2014069367A1 (ja) * | 2012-10-30 | 2014-05-08 | Jx日鉱日石金属株式会社 | 導電性酸化物焼結体及び該導電性酸化物を用いた低屈折率膜 |
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CN103270191B (zh) | 2016-10-05 |
JP5747922B2 (ja) | 2015-07-15 |
WO2012108157A1 (ja) | 2012-08-16 |
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TW201640695A (zh) | 2016-11-16 |
JP2015163741A (ja) | 2015-09-10 |
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