JP5729847B2 - 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 - Google Patents

導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 Download PDF

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Publication number
JP5729847B2
JP5729847B2 JP2014194957A JP2014194957A JP5729847B2 JP 5729847 B2 JP5729847 B2 JP 5729847B2 JP 2014194957 A JP2014194957 A JP 2014194957A JP 2014194957 A JP2014194957 A JP 2014194957A JP 5729847 B2 JP5729847 B2 JP 5729847B2
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Japan
Prior art keywords
film
substrate
conductive film
mask blank
multilayer reflective
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JP2014194957A
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English (en)
Japanese (ja)
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JP2015088742A (ja
Inventor
和宏 浜本
和宏 浜本
臼井　洋一
洋一 臼井
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Hoya Corp
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Hoya Corp
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/023—Optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/416—Reflective
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014194957A 2013-09-27 2014-09-25 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 Active JP5729847B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014194957A JP5729847B2 (ja) 2013-09-27 2014-09-25 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013202494 2013-09-27
JP2013202494 2013-09-27
JP2014194957A JP5729847B2 (ja) 2013-09-27 2014-09-25 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Related Child Applications (1)

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JP2015076651A Division JP6465720B2 (ja) 2013-09-27 2015-04-03 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

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JP2015088742A JP2015088742A (ja) 2015-05-07
JP5729847B2 true JP5729847B2 (ja) 2015-06-03

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JP2014194957A Active JP5729847B2 (ja) 2013-09-27 2014-09-25 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP2015076651A Active JP6465720B2 (ja) 2013-09-27 2015-04-03 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP2019001198A Active JP6630005B2 (ja) 2013-09-27 2019-01-08 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

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JP2019001198A Active JP6630005B2 (ja) 2013-09-27 2019-01-08 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Country Status (6)

Country Link
US (3) US9746762B2 (https=)
JP (3) JP5729847B2 (https=)
KR (3) KR102107799B1 (https=)
SG (3) SG11201509897WA (https=)
TW (3) TWI530754B (https=)
WO (1) WO2015046095A1 (https=)

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CN114424119A (zh) * 2019-09-26 2022-04-29 Hoya株式会社 带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法
JP7271760B2 (ja) * 2020-03-27 2023-05-11 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102464780B1 (ko) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크
JP7420027B2 (ja) * 2020-09-10 2024-01-23 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク
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Also Published As

Publication number Publication date
US10209614B2 (en) 2019-02-19
JP2015156034A (ja) 2015-08-27
US10527927B2 (en) 2020-01-07
KR20200047800A (ko) 2020-05-07
US20160124298A1 (en) 2016-05-05
KR101877896B1 (ko) 2018-07-12
WO2015046095A1 (ja) 2015-04-02
TWI530754B (zh) 2016-04-21
JP2019056939A (ja) 2019-04-11
SG10201805079YA (en) 2018-07-30
US20190155141A1 (en) 2019-05-23
SG11201509897WA (en) 2016-04-28
TW201516556A (zh) 2015-05-01
KR102127907B1 (ko) 2020-06-29
TWI626503B (zh) 2018-06-11
JP6465720B2 (ja) 2019-02-06
KR20170120718A (ko) 2017-10-31
KR20160061913A (ko) 2016-06-01
US20170315439A1 (en) 2017-11-02
US9746762B2 (en) 2017-08-29
TW201826009A (zh) 2018-07-16
JP2015088742A (ja) 2015-05-07
KR102107799B1 (ko) 2020-05-07
SG10201911502WA (en) 2020-02-27
TW201617728A (zh) 2016-05-16
JP6630005B2 (ja) 2020-01-15
TWI652542B (zh) 2019-03-01

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