KR102107799B1 - 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법 - Google Patents

도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법 Download PDF

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KR102107799B1
KR102107799B1 KR1020177030201A KR20177030201A KR102107799B1 KR 102107799 B1 KR102107799 B1 KR 102107799B1 KR 1020177030201 A KR1020177030201 A KR 1020177030201A KR 20177030201 A KR20177030201 A KR 20177030201A KR 102107799 B1 KR102107799 B1 KR 102107799B1
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South Korea
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film
substrate
conductive film
mask blank
reflective
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KR20170120718A (ko
Inventor
가즈히로 하마모토
요이치 우스이
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/023—Optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/416—Reflective
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020177030201A 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법 Active KR102107799B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-202494 2013-09-27
JP2013202494 2013-09-27
PCT/JP2014/074993 WO2015046095A1 (ja) 2013-09-27 2014-09-22 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Related Parent Applications (1)

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KR1020157035761A Division KR101877896B1 (ko) 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법

Related Child Applications (1)

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KR1020207012491A Division KR102127907B1 (ko) 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법

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KR20170120718A KR20170120718A (ko) 2017-10-31
KR102107799B1 true KR102107799B1 (ko) 2020-05-07

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KR1020177030201A Active KR102107799B1 (ko) 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
KR1020207012491A Active KR102127907B1 (ko) 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
KR1020157035761A Active KR101877896B1 (ko) 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법

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KR1020157035761A Active KR101877896B1 (ko) 2013-09-27 2014-09-22 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법

Country Status (6)

Country Link
US (3) US9746762B2 (https=)
JP (3) JP5729847B2 (https=)
KR (3) KR102107799B1 (https=)
SG (3) SG11201509897WA (https=)
TW (3) TWI530754B (https=)
WO (1) WO2015046095A1 (https=)

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KR102429244B1 (ko) * 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
SG11201913862WA (en) * 2017-07-05 2020-01-30 Toppan Printing Co Ltd Reflective photomask blank and reflective photomask
KR102937232B1 (ko) 2018-05-25 2026-03-10 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
JP7492456B2 (ja) * 2018-11-07 2024-05-29 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7250511B2 (ja) 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
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CN114424119A (zh) * 2019-09-26 2022-04-29 Hoya株式会社 带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法
JP7271760B2 (ja) * 2020-03-27 2023-05-11 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102464780B1 (ko) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크
JP7420027B2 (ja) * 2020-09-10 2024-01-23 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
JP7260078B2 (ja) * 2021-02-16 2023-04-18 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP7589633B2 (ja) * 2021-04-19 2024-11-26 Ａｇｃ株式会社 多層反射膜付き基板の検査方法、及び反射型マスクブランクの製造方法
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US10209614B2 (en) 2019-02-19
JP2015156034A (ja) 2015-08-27
US10527927B2 (en) 2020-01-07
KR20200047800A (ko) 2020-05-07
US20160124298A1 (en) 2016-05-05
KR101877896B1 (ko) 2018-07-12
WO2015046095A1 (ja) 2015-04-02
TWI530754B (zh) 2016-04-21
JP2019056939A (ja) 2019-04-11
SG10201805079YA (en) 2018-07-30
JP5729847B2 (ja) 2015-06-03
US20190155141A1 (en) 2019-05-23
SG11201509897WA (en) 2016-04-28
TW201516556A (zh) 2015-05-01
KR102127907B1 (ko) 2020-06-29
TWI626503B (zh) 2018-06-11
JP6465720B2 (ja) 2019-02-06
KR20170120718A (ko) 2017-10-31
KR20160061913A (ko) 2016-06-01
US20170315439A1 (en) 2017-11-02
US9746762B2 (en) 2017-08-29
TW201826009A (zh) 2018-07-16
JP2015088742A (ja) 2015-05-07
SG10201911502WA (en) 2020-02-27
TW201617728A (zh) 2016-05-16
JP6630005B2 (ja) 2020-01-15
TWI652542B (zh) 2019-03-01

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