JP5726037B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5726037B2
JP5726037B2 JP2011216533A JP2011216533A JP5726037B2 JP 5726037 B2 JP5726037 B2 JP 5726037B2 JP 2011216533 A JP2011216533 A JP 2011216533A JP 2011216533 A JP2011216533 A JP 2011216533A JP 5726037 B2 JP5726037 B2 JP 5726037B2
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JP
Japan
Prior art keywords
switching element
sense
voltage
current
sense voltage
Prior art date
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Application number
JP2011216533A
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English (en)
Japanese (ja)
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JP2013077976A5 (enExample
JP2013077976A (ja
Inventor
日山　一明
一明 日山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011216533A priority Critical patent/JP5726037B2/ja
Priority to US13/479,853 priority patent/US9013850B2/en
Priority to CN201210209562.8A priority patent/CN103036542B/zh
Priority to DE102012216318A priority patent/DE102012216318A1/de
Priority to KR1020120104371A priority patent/KR101391657B1/ko
Publication of JP2013077976A publication Critical patent/JP2013077976A/ja
Publication of JP2013077976A5 publication Critical patent/JP2013077976A5/ja
Application granted granted Critical
Publication of JP5726037B2 publication Critical patent/JP5726037B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2011216533A 2011-09-30 2011-09-30 半導体装置 Active JP5726037B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011216533A JP5726037B2 (ja) 2011-09-30 2011-09-30 半導体装置
US13/479,853 US9013850B2 (en) 2011-09-30 2012-05-24 Semiconductor device
CN201210209562.8A CN103036542B (zh) 2011-09-30 2012-06-25 半导体装置
DE102012216318A DE102012216318A1 (de) 2011-09-30 2012-09-13 Halbleitervorrichtung
KR1020120104371A KR101391657B1 (ko) 2011-09-30 2012-09-20 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011216533A JP5726037B2 (ja) 2011-09-30 2011-09-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2013077976A JP2013077976A (ja) 2013-04-25
JP2013077976A5 JP2013077976A5 (enExample) 2014-02-13
JP5726037B2 true JP5726037B2 (ja) 2015-05-27

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ID=47878800

Family Applications (1)

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JP2011216533A Active JP5726037B2 (ja) 2011-09-30 2011-09-30 半導体装置

Country Status (5)

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US (1) US9013850B2 (enExample)
JP (1) JP5726037B2 (enExample)
KR (1) KR101391657B1 (enExample)
CN (1) CN103036542B (enExample)
DE (1) DE102012216318A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139808B2 (en) 2017-02-28 2021-10-05 Mitsubishi Electric Corporation Semiconductor device and power conversion system

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CN105518992B (zh) * 2013-09-06 2018-11-30 三菱电机株式会社 半导体装置
JP5831528B2 (ja) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 半導体装置
JP6379476B2 (ja) * 2013-11-25 2018-08-29 シンフォニアテクノロジー株式会社 半導体装置
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JP6190280B2 (ja) * 2014-01-22 2017-08-30 株式会社日立製作所 半導体駆動装置ならびにこれを用いた電力変換装置
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DE102015211059B3 (de) * 2015-06-16 2016-09-01 Ellenberger & Poensgen Gmbh Elektronischer Schutzschalter
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WO2017141545A1 (ja) * 2016-02-17 2017-08-24 富士電機株式会社 半導体素子の過電流保護装置
JP6323485B2 (ja) * 2016-03-24 2018-05-16 株式会社オートネットワーク技術研究所 給電制御装置
JP6563590B2 (ja) * 2016-04-28 2019-08-21 ローム株式会社 過電流保護回路
JP2017212870A (ja) * 2016-05-20 2017-11-30 株式会社デンソー スイッチング素子の駆動制御装置
WO2017199949A1 (ja) * 2016-05-20 2017-11-23 株式会社デンソー スイッチング素子の駆動制御装置
KR102685402B1 (ko) * 2017-01-16 2024-07-15 삼성전자주식회사 반도체 장치 및 그 동작 방법
JP6790908B2 (ja) * 2017-02-23 2020-11-25 株式会社デンソー 半導体装置
JP6787203B2 (ja) * 2017-03-21 2020-11-18 トヨタ自動車株式会社 半導体装置の制御回路
US10611246B2 (en) * 2017-03-29 2020-04-07 Ford Global Technologies, Llc Gate driver with temperature compensated turn-off
WO2018198204A1 (ja) * 2017-04-25 2018-11-01 三菱電機株式会社 過電流保護装置、インバータ装置、コンバータ装置及び空気調和機
JP6939059B2 (ja) * 2017-04-27 2021-09-22 富士電機株式会社 半導体素子の駆動装置
JP6819779B2 (ja) * 2017-05-16 2021-01-27 富士電機株式会社 制御装置及び半導体装置
TWI646767B (zh) * 2017-05-22 2019-01-01 偉詮電子股份有限公司 電源控制裝置及電源控制系統
CN107393491B (zh) * 2017-07-18 2018-08-14 深圳市华星光电半导体显示技术有限公司 时钟信号输出电路及液晶显示装置
CN107257193B (zh) * 2017-07-19 2019-05-03 深圳市华星光电半导体显示技术有限公司 一种过流保护电路及液晶显示器
DE112018005588T5 (de) * 2017-10-17 2020-07-16 Fuji Electric Co., Ltd. Überstrom-erfassungseinrichtung, steuereinrichtung und überstrom-erfassungsverfahren
CN111448761A (zh) * 2017-12-28 2020-07-24 新电元工业株式会社 半导体开关控制电路以及开关电源装置
DE102018104621A1 (de) 2018-02-28 2019-08-29 Infineon Technologies Ag Verfahren zum Betreiben eines Transistorbauelements und elektronische Schaltung mit einem Transistorbauelement
CN108802480B (zh) * 2018-06-20 2024-02-06 国网安徽省电力有限公司滁州供电公司 一种感应电压测量装置
KR102026931B1 (ko) * 2018-07-20 2019-10-01 한국전기연구원 전력 스위치용 단락보호회로
JP7346944B2 (ja) * 2019-07-03 2023-09-20 富士電機株式会社 半導体素子の電流検出回路及び電流検出方法、並びに半導体モジュール
KR102703415B1 (ko) * 2019-07-25 2024-09-04 엘에스일렉트릭(주) 과전류 보호회로 및 이를 사용하는 전력변환장치
JP7413754B2 (ja) * 2019-12-18 2024-01-16 富士電機株式会社 半導体駆動装置および電力変換装置
KR102337796B1 (ko) * 2020-01-09 2021-12-08 엘지전자 주식회사 반도체 소자 구동장치
US11531054B2 (en) * 2020-03-23 2022-12-20 Semiconductor Components Industries, Llc IGBT/MOSFET fault protection
CN113765070B (zh) * 2020-06-01 2024-01-23 中车株洲电力机车研究所有限公司 基于电感电流变化率的igbt短路保护电路和方法
JP7494609B2 (ja) * 2020-07-10 2024-06-04 富士電機株式会社 半導体モジュール
WO2022224581A1 (ja) * 2021-04-23 2022-10-27 富士電機株式会社 過電流検出回路、駆動制御装置および電力変換装置
JP7571663B2 (ja) * 2021-05-31 2024-10-23 株式会社デンソー ゲート駆動装置
JP2024116934A (ja) 2023-02-16 2024-08-28 株式会社東芝 電子回路、方法、コンピュータプログラム及び電子システム

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JP2999887B2 (ja) * 1992-10-09 2000-01-17 三菱電機株式会社 Ｉｇｂｔの過電流保護回路及び半導体集積回路装置
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JP3589392B2 (ja) * 1999-02-26 2004-11-17 矢崎総業株式会社 過電流検出回路及び過電流検出・保護回路
JP3625165B2 (ja) * 1999-12-01 2005-03-02 矢崎総業株式会社 半導体スイッチング装置
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JP4219567B2 (ja) * 2001-04-03 2009-02-04 三菱電機株式会社 半導体装置
JP4295928B2 (ja) * 2001-05-28 2009-07-15 三菱電機株式会社 半導体保護回路
JP4057260B2 (ja) 2001-08-07 2008-03-05 株式会社日立製作所 電源回路、電源システム、および電子装置
JP3767445B2 (ja) * 2001-09-28 2006-04-19 アンデン株式会社 過電流保護機能を有する電源供給装置、負荷駆動装置および車両用電源供給装置
JP3800115B2 (ja) * 2002-03-25 2006-07-26 株式会社デンソー 過電流検出機能付き負荷駆動回路
JP4924086B2 (ja) 2007-02-21 2012-04-25 三菱電機株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139808B2 (en) 2017-02-28 2021-10-05 Mitsubishi Electric Corporation Semiconductor device and power conversion system

Also Published As

Publication number Publication date
KR101391657B1 (ko) 2014-05-07
KR20130035886A (ko) 2013-04-09
CN103036542B (zh) 2015-09-16
CN103036542A (zh) 2013-04-10
DE102012216318A1 (de) 2013-04-04
JP2013077976A (ja) 2013-04-25
US9013850B2 (en) 2015-04-21
US20130083442A1 (en) 2013-04-04

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