JP5713808B2 - プラズマ処理方法及び半導体装置の製造方法 - Google Patents
プラズマ処理方法及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000003672 processing method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims description 71
- 239000010410 layer Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 45
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 35
- 229910052721 tungsten Inorganic materials 0.000 claims description 34
- 239000010937 tungsten Substances 0.000 claims description 34
- 238000001020 plasma etching Methods 0.000 claims description 24
- 125000001153 fluoro group Chemical group F* 0.000 claims description 15
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 11
- 229910001882 dioxygen Inorganic materials 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 9
- 229910001510 metal chloride Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- 230000009467 reduction Effects 0.000 claims description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 239000003507 refrigerant Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Description
処理ガス:NF3/O2/Ar=20/30/180 sccm
圧力:1.33Pa(10mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):40/40/30℃
時間:30秒
(保護層形成工程)
処理ガス:O2/Ar=200/800 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):60/60/30℃
時間:10秒
(堆積物除去工程)
処理ガス:NF3/O2/Ar=8/200/800 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):60/60/30℃
時間:5秒
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):60/60/30℃
時間:144秒
処理ガス:CHF3/O2/N2=4/100/500 sccm
とし、O2/CHF3の流量比を25としてプラズマ処理を行った。これらの実施例2と比較例3とを比較すると、比較例3では、堆積物は除去できたが、図1に示した構造のタングステン部分のパターン幅が細くなり、パターンの倒れが生じた。これに対して、実施例2では、堆積物を除去することができ、かつ、パターンの倒れが生じるようなことはなかった。
(保護層形成工程)
処理ガス:Cl2/N2=160/500 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):60/60/30℃
時間:5秒
(堆積物除去工程)
処理ガス:NF3/O2/N2=4/200/500 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):60/60/30℃
時間:5秒
(保護層形成工程)
処理ガス:O2/N2=3000/600 sccm
圧力:172.9Pa(1300mTorr)
温度:250℃
時間:25秒
(堆積物除去工程)
処理ガス(1):CHF3/N2/O2=4/200/500 sccm
処理ガス(2):N2/Cl2=500/160 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):300/0W
温度(中央部/周縁部/冷媒):60/60/30℃
時間:処理ガス(1)8秒+処理ガス(2)5秒を18サイクル
処理ガス:H2/Ar=40/960 sccm
圧力:106.4Pa(800mTorr)
高周波電力(上部/下部):300/0W
温度:60℃
時間:1分
(保護層形成工程)
処理ガス:Cl2/Ar/O2=250/500/50 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):150/0W
温度(中央部/周縁部/冷媒):60/60/20℃
時間:5秒
(堆積物除去工程)
処理ガス:CHF3/O2/Ar=4/300/500 sccm
圧力:13.3Pa(100mTorr)
高周波電力(上部/下部):150/0W
温度(中央部/周縁部/冷媒):60/60/20℃
時間:8秒
Claims (8)
- 基板に形成された金属層をプラズマエッチングする工程を経て積層構造中に前記金属層を有するパターンを形成した後、前記金属層を構成する金属を含み前記パターンの側壁部に堆積した堆積物を除去するプラズマ処理方法であって、
前記金属層の側壁部に、前記金属の酸化物又は塩化物を形成する保護層形成工程と、
フッ素原子を含むガスのプラズマを作用させて前記堆積物を除去する堆積物除去工程と、
前記保護層形成工程及び前記堆積物除去工程の後、水素を含むプラズマを作用させて前記金属の酸化物又は塩化物を還元する還元工程と
を具備したことを特徴とするプラズマ処理方法。 - 請求項1記載のプラズマ処理方法であって、
前記保護層形成工程では、酸素ガスのプラズマを作用させて前記金属の酸化物を形成、又は塩素プラズマを作用させて前記金属の塩化物を形成し、当該保護層形成工程と前記堆積物除去工程を、交互に複数回繰り返して行い、この後前記還元工程を行う
ことを特徴とするプラズマ処理方法。 - 請求項1記載のプラズマ処理方法であって、
前記保護層形成工程では、酸素ガスのプラズマを作用させて前記金属の酸化物を形成、又は塩素ガスのプラズマを作用させて前記金属の塩化物を形成し、当該保護層形成工程と前記堆積物除去工程を同時に行い、酸素ガス又は塩素ガスの流量と、フッ素原子を含むガスの流量との比(酸素ガス又は塩素ガスの流量/フッ素原子を含むガスの流量)を25より大きくする
ことを特徴とするプラズマ処理方法。 - 請求項1記載のプラズマ処理方法であって、
前記保護層形成工程では、酸素ガス雰囲気で前記基板を加熱して前記金属の酸化物を形成し、当該保護層形成工程を前記堆積物除去工程の前に1回のみ行う
ことを特徴とするプラズマ処理方法。 - 請求項1〜4いずれか1項記載のプラズマ処理方法であって、
前記フッ素原子を含むガスが、NF3、CHF3、CH2F2の少なくともいずれか1種である
ことを特徴とするプラズマ処理方法。 - 請求項1〜5いずれか1項記載のプラズマ処理方法であって、
前記金属層が、タングステンを含む層である
ことを特徴とするプラズマ処理方法。 - 請求項1〜6いずれか1項記載のプラズマ処理方法であって、
前記金属層が、チタンを含む層である
ことを特徴とするプラズマ処理方法。 - 基板に形成された金属層をプラズマエッチングする工程を経て積層構造中に前記金属層を有するパターンを形成した後、前記金属層を構成する金属を含み前記パターンの側壁部に堆積した堆積物を除去する堆積物の除去プロセスを有する半導体装置の製造方法であって、
前記堆積物の除去プロセスは、
前記金属層の側壁部に、前記金属の酸化物又は塩化物を形成する保護層形成工程と、
フッ素原子を含むガスのプラズマを作用させて前記堆積物を除去する堆積物除去工程と、
前記保護層形成工程及び前記堆積物除去工程の後、水素を含むプラズマを作用させて前記金属の酸化物又は塩化物を還元する還元工程と
を具備したことを特徴とする半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011129790A JP5713808B2 (ja) | 2010-07-09 | 2011-06-10 | プラズマ処理方法及び半導体装置の製造方法 |
TW100123544A TWI536425B (zh) | 2010-07-09 | 2011-07-04 | 電漿處理方法及半導體裝置之製造方法 |
KR1020110067163A KR101787514B1 (ko) | 2010-07-09 | 2011-07-07 | 플라즈마 처리 방법 및 반도체 장치의 제조 방법 |
CN201110194328.8A CN102315095B (zh) | 2010-07-09 | 2011-07-08 | 等离子体处理方法以及半导体装置的制造方法 |
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US9230825B2 (en) * | 2012-10-29 | 2016-01-05 | Lam Research Corporation | Method of tungsten etching |
CN105097700B (zh) * | 2014-04-24 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制备方法 |
JP6502160B2 (ja) * | 2015-05-11 | 2019-04-17 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
KR102355875B1 (ko) * | 2017-12-18 | 2022-02-08 | 세키스이가가쿠 고교가부시키가이샤 | 표면 처리 방법 및 장치 |
CN110326089B (zh) * | 2018-01-31 | 2023-07-04 | 株式会社日立高新技术 | 等离子处理方法以及等离子处理装置 |
CN113053744B (zh) * | 2019-12-27 | 2024-03-22 | 株式会社日立高新技术 | 半导体装置的制造方法 |
CN114141631A (zh) * | 2020-09-03 | 2022-03-04 | 长鑫存储技术有限公司 | 金属连线的制备方法 |
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US5575888A (en) | 1995-04-14 | 1996-11-19 | The United States Of America As Represented By The Secretary Of The Navy | Sidewall passivation by oxidation during refractory-metal plasma etching |
JP2891952B2 (ja) | 1996-12-17 | 1999-05-17 | 芝浦メカトロニクス株式会社 | 半導体装置の製造方法 |
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US6297147B1 (en) * | 1998-06-05 | 2001-10-02 | Applied Materials, Inc. | Plasma treatment for ex-situ contact fill |
US6207583B1 (en) * | 1998-09-04 | 2001-03-27 | Alliedsignal Inc. | Photoresist ashing process for organic and inorganic polymer dielectric materials |
JP2000082693A (ja) | 1998-09-04 | 2000-03-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2000311885A (ja) * | 1999-04-26 | 2000-11-07 | Mitsubishi Electric Corp | 金属積層配線を有する半導体装置およびその製造方法 |
JP2001085411A (ja) * | 1999-09-16 | 2001-03-30 | Matsushita Electric Ind Co Ltd | 真空処理方法 |
KR100338768B1 (ko) * | 1999-10-25 | 2002-05-30 | 윤종용 | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 |
US6431182B1 (en) * | 1999-10-27 | 2002-08-13 | Advanced Micro Devices, Inc. | Plasma treatment for polymer removal after via etch |
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US20040118697A1 (en) * | 2002-10-01 | 2004-06-24 | Applied Materials, Inc. | Metal deposition process with pre-cleaning before electrochemical deposition |
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JP2007067336A (ja) * | 2005-09-02 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
US8323521B2 (en) * | 2009-08-12 | 2012-12-04 | Tokyo Electron Limited | Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques |
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US9177781B2 (en) | 2015-11-03 |
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TW201225154A (en) | 2012-06-16 |
CN102315095A (zh) | 2012-01-11 |
US20120009786A1 (en) | 2012-01-12 |
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