JP5690168B2 - 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 - Google Patents

基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 Download PDF

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Publication number
JP5690168B2
JP5690168B2 JP2011040170A JP2011040170A JP5690168B2 JP 5690168 B2 JP5690168 B2 JP 5690168B2 JP 2011040170 A JP2011040170 A JP 2011040170A JP 2011040170 A JP2011040170 A JP 2011040170A JP 5690168 B2 JP5690168 B2 JP 5690168B2
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JP
Japan
Prior art keywords
substrate
cleaned
cleaning
liquid
substrate cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011040170A
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English (en)
Japanese (ja)
Other versions
JP2012176353A (ja
JP2012176353A5 (enExample
Inventor
秀晃 寺門
秀晃 寺門
佳大 安藤
佳大 安藤
西部　幸伸
幸伸 西部
廣瀬　治道
治道 廣瀬
山元　良高
良高 山元
田中　康一
康一 田中
田中　潤一
潤一 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Sharp Corp
Original Assignee
Shibaura Mechatronics Corp
Sharp Corp
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Filing date
Publication date
Application filed by Shibaura Mechatronics Corp, Sharp Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2011040170A priority Critical patent/JP5690168B2/ja
Priority to KR1020120010603A priority patent/KR101373784B1/ko
Priority to TW101104712A priority patent/TWI469198B/zh
Priority to CN201210044963.2A priority patent/CN102651327B/zh
Publication of JP2012176353A publication Critical patent/JP2012176353A/ja
Publication of JP2012176353A5 publication Critical patent/JP2012176353A5/ja
Application granted granted Critical
Publication of JP5690168B2 publication Critical patent/JP5690168B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Thin Film Transistor (AREA)
JP2011040170A 2011-02-25 2011-02-25 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 Expired - Fee Related JP5690168B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011040170A JP5690168B2 (ja) 2011-02-25 2011-02-25 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法
KR1020120010603A KR101373784B1 (ko) 2011-02-25 2012-02-02 기판 세정 장치, 기판 세정 방법, 표시 장치의 제조 장치 및 표시 장치의 제조 방법
TW101104712A TWI469198B (zh) 2011-02-25 2012-02-14 Substrate cleaning apparatus, substrate cleaning method, manufacturing apparatus of display device, and manufacturing method of display device
CN201210044963.2A CN102651327B (zh) 2011-02-25 2012-02-24 基板清洗装置及方法、显示装置的制造装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011040170A JP5690168B2 (ja) 2011-02-25 2011-02-25 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012176353A JP2012176353A (ja) 2012-09-13
JP2012176353A5 JP2012176353A5 (enExample) 2014-02-06
JP5690168B2 true JP5690168B2 (ja) 2015-03-25

Family

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Family Applications (1)

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JP2011040170A Expired - Fee Related JP5690168B2 (ja) 2011-02-25 2011-02-25 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法

Country Status (4)

Country Link
JP (1) JP5690168B2 (enExample)
KR (1) KR101373784B1 (enExample)
CN (1) CN102651327B (enExample)
TW (1) TWI469198B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014065026A (ja) * 2012-09-10 2014-04-17 Panasonic Corp 表面処理装置及び表面処理方法
JP6329342B2 (ja) * 2013-06-07 2018-05-23 株式会社ダルトン 洗浄方法及び洗浄装置
JP6268410B2 (ja) * 2013-09-27 2018-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101607521B1 (ko) 2014-07-08 2016-03-31 세메스 주식회사 기판 처리 장치 및 방법
CN110544647A (zh) * 2018-11-06 2019-12-06 北京北方华创微电子装备有限公司 金属互连清洗装置及清洗方法
CN109616551B (zh) * 2018-11-19 2021-02-09 横店集团东磁股份有限公司 一种多晶表面有机物不良电池片返工工艺
CN110473773B (zh) * 2019-08-22 2022-03-22 北京北方华创微电子装备有限公司 晶圆清洗方法及晶圆清洗设备
KR102404528B1 (ko) * 2019-09-02 2022-06-02 세메스 주식회사 노즐, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
CN110676153A (zh) * 2019-09-20 2020-01-10 常州捷佳创精密机械有限公司 太阳能电池、臭氧溶液施加装置及太阳能电池的制备方法
JP2024134798A (ja) * 2023-03-22 2024-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及びその装置
JP2024143699A (ja) * 2023-03-30 2024-10-11 高周波熱錬株式会社 キャリアフィルムの洗浄方法及び洗浄装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0226658A (ja) * 1988-07-15 1990-01-29 Matsushita Electric Works Ltd 微細気泡発生ノズル
JP2820275B2 (ja) * 1989-07-17 1998-11-05 富士通株式会社 洗浄装置
JP3660391B2 (ja) * 1994-05-27 2005-06-15 株式会社東芝 半導体装置の製造方法
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
JP4208056B2 (ja) * 1997-06-13 2009-01-14 忠弘 大見 洗浄方法
JP2000040682A (ja) * 1998-07-23 2000-02-08 Sumitomo Metal Ind Ltd 半導体基板の洗浄方法及び洗浄装置
JP2000091291A (ja) * 1998-09-11 2000-03-31 Memc Kk シリコンウエハの洗浄方法
JP4675448B2 (ja) * 1999-06-01 2011-04-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体基板の洗浄方法
JP2001284316A (ja) * 2000-03-30 2001-10-12 Dainippon Screen Mfg Co Ltd 基板処理装置
JP3998005B2 (ja) * 2004-04-30 2007-10-24 セイコーエプソン株式会社 液晶表示装置の製造装置
JP2006289240A (ja) * 2005-04-08 2006-10-26 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
JP2008098430A (ja) * 2006-10-12 2008-04-24 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2009000595A (ja) * 2007-06-19 2009-01-08 Dainippon Screen Mfg Co Ltd ウエット洗浄装置および基板洗浄システム
CN101939826B (zh) * 2008-02-07 2012-08-22 独立行政法人产业技术综合研究所 半导体晶片的清洗方法以及清洗装置
JP5522028B2 (ja) * 2010-03-09 2014-06-18 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5361790B2 (ja) * 2010-04-28 2013-12-04 株式会社東芝 半導体基板の表面処理方法
JP5751895B2 (ja) * 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置

Also Published As

Publication number Publication date
CN102651327B (zh) 2014-11-12
TWI469198B (zh) 2015-01-11
KR20120098412A (ko) 2012-09-05
JP2012176353A (ja) 2012-09-13
CN102651327A (zh) 2012-08-29
TW201239972A (en) 2012-10-01
KR101373784B1 (ko) 2014-03-13

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