JP5676826B2 - 磁気センサの製造方法 - Google Patents

磁気センサの製造方法 Download PDF

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Publication number
JP5676826B2
JP5676826B2 JP2014529369A JP2014529369A JP5676826B2 JP 5676826 B2 JP5676826 B2 JP 5676826B2 JP 2014529369 A JP2014529369 A JP 2014529369A JP 2014529369 A JP2014529369 A JP 2014529369A JP 5676826 B2 JP5676826 B2 JP 5676826B2
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magnetic sensor
pellet
adhesive layer
insulating
film
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Japanese (ja)
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JPWO2014091714A1 (ja
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敏昭 福中
敏昭 福中
長谷川　秀則
秀則 長谷川
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Asahi Kasei EMD Corp
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Asahi Kasei EMD Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2014529369A 2012-12-14 2013-12-03 磁気センサの製造方法 Active JP5676826B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014529369A JP5676826B2 (ja) 2012-12-14 2013-12-03 磁気センサの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012273481 2012-12-14
JP2012273481 2012-12-14
PCT/JP2013/007097 WO2014091714A1 (ja) 2012-12-14 2013-12-03 磁気センサ及び磁気センサ装置、磁気センサの製造方法
JP2014529369A JP5676826B2 (ja) 2012-12-14 2013-12-03 磁気センサの製造方法

Publications (2)

Publication Number Publication Date
JP5676826B2 true JP5676826B2 (ja) 2015-02-25
JPWO2014091714A1 JPWO2014091714A1 (ja) 2017-01-05

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JP2014529369A Active JP5676826B2 (ja) 2012-12-14 2013-12-03 磁気センサの製造方法

Country Status (5)

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JP (1) JP5676826B2 (ko)
KR (2) KR20160052798A (ko)
CN (2) CN106784300A (ko)
TW (1) TWI543417B (ko)
WO (1) WO2014091714A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535812B2 (en) 2017-09-04 2020-01-14 Rohm Co., Ltd. Semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6110886B2 (ja) * 2014-06-17 2017-04-05 旭化成エレクトロニクス株式会社 ホールセンサ
WO2016047130A1 (ja) * 2014-09-22 2016-03-31 旭化成エレクトロニクス株式会社 ホールセンサ及びレンズモジュール
JP6085726B2 (ja) * 2014-10-03 2017-02-22 旭化成エレクトロニクス株式会社 ホールセンサの製造方法及びホールセンサ並びにレンズモジュール
JP6433769B2 (ja) * 2014-11-27 2018-12-05 旭化成エレクトロニクス株式会社 ホールセンサ及びホールセンサの製造方法
JP6553416B2 (ja) * 2015-06-05 2019-07-31 旭化成エレクトロニクス株式会社 ホールセンサ
JP6693735B2 (ja) * 2015-12-11 2020-05-13 旭化成エレクトロニクス株式会社 ホールセンサ及びその製造方法
JP2018066722A (ja) * 2016-10-14 2018-04-26 旭化成エレクトロニクス株式会社 半導体装置
JP2018074067A (ja) * 2016-11-01 2018-05-10 旭化成エレクトロニクス株式会社 半導体装置
CN107966669B (zh) * 2017-12-19 2019-11-08 大连理工大学 适用于高温工作环境的半导体三维霍尔传感器及其制作方法
CN108171299A (zh) * 2017-12-19 2018-06-15 中电智能卡有限责任公司 一种智能卡的加工工艺
JP7360906B2 (ja) * 2019-11-15 2023-10-13 ローム株式会社 半導体装置の製造方法及び半導体装置
JP2023036447A (ja) * 2021-09-02 2023-03-14 新電元工業株式会社 リードフレーム一体型基板、半導体装置、リードフレーム一体型基板の製造方法、及び半導体装置の製造方法
JP7138261B1 (ja) 2022-06-30 2022-09-15 旭化成エレクトロニクス株式会社 半導体パッケージ、及び駆動装置

Citations (6)

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JPH01124273A (ja) * 1987-11-10 1989-05-17 Asahi Chem Ind Co Ltd 磁電変換素子の実装構造
JP2003243646A (ja) * 2002-02-13 2003-08-29 Asahi Kasei Electronics Co Ltd 複合半導体素子及びその製造方法
JP2005123383A (ja) * 2003-10-16 2005-05-12 Asahi Kasei Electronics Co Ltd 磁電変換素子
JP2005294443A (ja) * 2004-03-31 2005-10-20 Sony Corp 半導体装置及びその製造方法
JP2009049253A (ja) * 2007-08-22 2009-03-05 Sumitomo Bakelite Co Ltd 接着フィルム
WO2010090075A1 (ja) * 2009-02-05 2010-08-12 アルプス電気株式会社 磁気検出装置

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JPS6477152A (en) * 1987-09-18 1989-03-23 Hitachi Ltd Lead frame
KR20030019082A (ko) * 2001-08-27 2003-03-06 산요 덴키 가부시키가이샤 회로 장치의 제조 방법
US6703075B1 (en) * 2002-12-24 2004-03-09 Chipmos Technologies (Bermuda) Ltd. Wafer treating method for making adhesive dies
JPWO2007057954A1 (ja) * 2005-11-17 2009-04-30 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP2008103700A (ja) * 2006-09-19 2008-05-01 Hitachi Chem Co Ltd 多層ダイボンドシート、半導体用接着フィルム付き半導体装置、半導体装置および半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124273A (ja) * 1987-11-10 1989-05-17 Asahi Chem Ind Co Ltd 磁電変換素子の実装構造
JP2003243646A (ja) * 2002-02-13 2003-08-29 Asahi Kasei Electronics Co Ltd 複合半導体素子及びその製造方法
JP2005123383A (ja) * 2003-10-16 2005-05-12 Asahi Kasei Electronics Co Ltd 磁電変換素子
JP2005294443A (ja) * 2004-03-31 2005-10-20 Sony Corp 半導体装置及びその製造方法
JP2009049253A (ja) * 2007-08-22 2009-03-05 Sumitomo Bakelite Co Ltd 接着フィルム
WO2010090075A1 (ja) * 2009-02-05 2010-08-12 アルプス電気株式会社 磁気検出装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535812B2 (en) 2017-09-04 2020-01-14 Rohm Co., Ltd. Semiconductor device
US10944046B2 (en) 2017-09-04 2021-03-09 Rohm Co., Ltd. Semiconductor device

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CN106784300A (zh) 2017-05-31
KR20140113964A (ko) 2014-09-25
TWI543417B (zh) 2016-07-21
TW201436313A (zh) 2014-09-16
CN104170109A (zh) 2014-11-26
WO2014091714A1 (ja) 2014-06-19
CN106848055A (zh) 2017-06-13
KR20160052798A (ko) 2016-05-12
JPWO2014091714A1 (ja) 2017-01-05

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