JP5667840B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5667840B2
JP5667840B2 JP2010249520A JP2010249520A JP5667840B2 JP 5667840 B2 JP5667840 B2 JP 5667840B2 JP 2010249520 A JP2010249520 A JP 2010249520A JP 2010249520 A JP2010249520 A JP 2010249520A JP 5667840 B2 JP5667840 B2 JP 5667840B2
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JP
Japan
Prior art keywords
insulated gate
transistor
gate transistor
wiring
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010249520A
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English (en)
Japanese (ja)
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JP2011124560A (ja
JP2011124560A5 (enExample
Inventor
小山　潤
潤 小山
一徳 渡邉
一徳 渡邉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010249520A priority Critical patent/JP5667840B2/ja
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Publication of JP2011124560A5 publication Critical patent/JP2011124560A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Thyristors (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP2010249520A 2009-11-13 2010-11-08 半導体装置 Expired - Fee Related JP5667840B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010249520A JP5667840B2 (ja) 2009-11-13 2010-11-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009259900 2009-11-13
JP2009259900 2009-11-13
JP2010249520A JP5667840B2 (ja) 2009-11-13 2010-11-08 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012161389A Division JP5097868B2 (ja) 2009-11-13 2012-07-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2011124560A JP2011124560A (ja) 2011-06-23
JP2011124560A5 JP2011124560A5 (enExample) 2013-10-10
JP5667840B2 true JP5667840B2 (ja) 2015-02-12

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010249520A Expired - Fee Related JP5667840B2 (ja) 2009-11-13 2010-11-08 半導体装置
JP2012161389A Expired - Fee Related JP5097868B2 (ja) 2009-11-13 2012-07-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012161389A Expired - Fee Related JP5097868B2 (ja) 2009-11-13 2012-07-20 半導体装置

Country Status (5)

Country Link
US (2) US8334719B2 (enExample)
JP (2) JP5667840B2 (enExample)
KR (1) KR101721850B1 (enExample)
TW (1) TWI555134B (enExample)
WO (1) WO2011058852A1 (enExample)

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JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI605593B (zh) * 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US9106223B2 (en) * 2013-05-20 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
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JP6612056B2 (ja) * 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 撮像装置、及び監視装置
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US11777502B2 (en) * 2019-03-29 2023-10-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device formed using unipolar transistor
US11228312B1 (en) * 2020-07-15 2022-01-18 Qualcomm Incorporated Wide voltage range level shifter with reduced duty cycle distortion across operating conditions

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US20110115545A1 (en) 2011-05-19
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US8334719B2 (en) 2012-12-18
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