JP5659425B2 - 負イオンプラズマを生成する処理システムおよび中性ビーム源 - Google Patents

負イオンプラズマを生成する処理システムおよび中性ビーム源 Download PDF

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Publication number
JP5659425B2
JP5659425B2 JP2010527060A JP2010527060A JP5659425B2 JP 5659425 B2 JP5659425 B2 JP 5659425B2 JP 2010527060 A JP2010527060 A JP 2010527060A JP 2010527060 A JP2010527060 A JP 2010527060A JP 5659425 B2 JP5659425 B2 JP 5659425B2
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chamber
plasma
pressure
coupled
processing system
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JP2010527060A
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Japanese (ja)
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JP2010541167A5 (enExample
JP2010541167A (ja
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チェン，リー
ファンク，メリット
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2010527060A 2007-09-27 2008-09-22 負イオンプラズマを生成する処理システムおよび中性ビーム源 Expired - Fee Related JP5659425B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/862,358 2007-09-27
US11/862,358 US20090084501A1 (en) 2007-09-27 2007-09-27 Processing system for producing a negative ion plasma
PCT/US2008/077163 WO2009042534A1 (en) 2007-09-27 2008-09-22 Processing system for producing a negative ion plasma

Publications (3)

Publication Number Publication Date
JP2010541167A JP2010541167A (ja) 2010-12-24
JP2010541167A5 JP2010541167A5 (enExample) 2011-10-27
JP5659425B2 true JP5659425B2 (ja) 2015-01-28

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JP2010527060A Expired - Fee Related JP5659425B2 (ja) 2007-09-27 2008-09-22 負イオンプラズマを生成する処理システムおよび中性ビーム源

Country Status (6)

Country Link
US (1) US20090084501A1 (enExample)
JP (1) JP5659425B2 (enExample)
KR (1) KR101419975B1 (enExample)
CN (1) CN101809715B (enExample)
TW (1) TWI505352B (enExample)
WO (1) WO2009042534A1 (enExample)

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US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
CN103262220A (zh) * 2010-12-16 2013-08-21 日立造船株式会社 利用电子束技术产生臭氧和等离子体
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
US9039911B2 (en) * 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
CN103290392A (zh) * 2012-03-01 2013-09-11 苏州汇智真空科技有限公司 共用电极的等离子体增强化学气相沉积装置及方法
US9431218B2 (en) 2013-03-15 2016-08-30 Tokyo Electron Limited Scalable and uniformity controllable diffusion plasma source
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) * 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
KR101799915B1 (ko) 2013-07-09 2017-11-21 피닉스 뉴클리어 랩스 엘엘씨 높은 신뢰성, 긴 수명, 음이온 소스
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
JP6247087B2 (ja) * 2013-12-18 2017-12-13 東京エレクトロン株式会社 処理装置および活性種の生成方法
US9288890B1 (en) * 2014-10-31 2016-03-15 Tokyo Electron Limited Method and apparatus for providing an anisotropic and mono-energetic neutral beam by non-ambipolar electron plasma
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
US10475626B2 (en) 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
CN105826220A (zh) * 2016-03-18 2016-08-03 华灿光电股份有限公司 一种干法刻蚀设备
US10062585B2 (en) * 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10354883B2 (en) * 2017-10-03 2019-07-16 Mattson Technology, Inc. Surface treatment of silicon or silicon germanium surfaces using organic radicals
US11462386B2 (en) * 2018-12-17 2022-10-04 Applied Materials, Inc. Electron beam apparatus for optical device fabrication
US20220119954A1 (en) * 2019-02-07 2022-04-21 Lam Research Corporation Substrate processing tool capable of modulating one or more plasma temporally and/or spatially
CN110335802B (zh) * 2019-07-11 2022-03-22 北京北方华创微电子装备有限公司 预清洗腔室及其过滤装置
US20230031722A1 (en) * 2021-07-23 2023-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Voltage Control for Etching Systems

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KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
EP0977470A3 (en) * 1994-03-17 2003-11-19 Fuji Electric Co., Ltd. Method and apparatus for generating induced plasma
JP2942138B2 (ja) * 1994-03-22 1999-08-30 三菱電機株式会社 プラズマ処理装置及びプラズマ処理方法
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JP2004281230A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP2004281232A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP4135541B2 (ja) * 2003-03-26 2008-08-20 ソニー株式会社 プラズマ表面処理方法
WO2005054127A1 (ja) * 2003-12-03 2005-06-16 Ideal Star Inc. 誘導フラーレンの製造装置及び製造方法
US20060174835A1 (en) * 2005-02-10 2006-08-10 Misako Saito Vacuum processing apparatus and method of using the same
JP2007005021A (ja) * 2005-06-21 2007-01-11 Ideal Star Inc プラズマ源、フラーレンベース材料の製造方法及び製造装置
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US7358484B2 (en) * 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating

Also Published As

Publication number Publication date
CN101809715A (zh) 2010-08-18
CN101809715B (zh) 2012-11-14
TWI505352B (zh) 2015-10-21
US20090084501A1 (en) 2009-04-02
JP2010541167A (ja) 2010-12-24
KR101419975B1 (ko) 2014-07-16
TW200924051A (en) 2009-06-01
KR20100080913A (ko) 2010-07-13
WO2009042534A1 (en) 2009-04-02

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