CN103348776B - 多区等离子体生成的方法和设备 - Google Patents

多区等离子体生成的方法和设备 Download PDF

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CN103348776B
CN103348776B CN201180067134.XA CN201180067134A CN103348776B CN 103348776 B CN103348776 B CN 103348776B CN 201180067134 A CN201180067134 A CN 201180067134A CN 103348776 B CN103348776 B CN 103348776B
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CN103348776A (zh
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马修·斯科特·罗杰斯
华仲强
克里斯托弗·S·奥尔森
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Abstract

本发明的实施例提供了一种方法和设备，通过在给定压力下控制等离子体中离子与自由基的比例而对基板进行等离子体处理，以于基板上和置于其上的器件上形成薄膜。可维持给定压力以利用一等离子体源促进离子生成，并可用第二等离子体源来提供其他自由基。在一实施例中，在处理区域中生成低压等离子体，并于单独区域中生成高压等离子体，所述处理区域具有位于其中的基板。来自高压等离子体的自由基被注入到具有低压等离子体的处理区域中，因而在给定操作压力下改变自由基对离子的自然分布。所得到的处理与设备能调适离子与自由基的比例，以更好地控制在高纵横比特征结构上的薄膜形成，并因而提升角区磨圆、侧壁对底部沟槽成长的共形性，及选择性成长。

Description

多区等离子体生成的方法和设备
技术领域
本发明的实施例大体而言是关于基板的等离子体处理方法和设备，且更具体而言是关于通过使用多区等离子体生成来控制等离子体中离子与自由基的比例以在基板上或置于基板上的器件上形成薄膜。
背景技术
由于逻辑器件根据摩尔定律(Moore’s Law)而持续减少尺寸，处理上的挑战随之生成。随着此类器件的临界尺寸缩减，对于制造者而言，各种构件的几何形状也变得更具挑战性。纵横比(aspect ratio)提高且均匀性、容限度及可靠性问题激增。此外，关于角区磨圆、底部对侧部沟槽成长共形性，以及选择性成长的问题也变得显著，这些问题是受到在给定压力下等离子体内离子与自由基的自然分布的影响。因此，需要在给定压力下对等离子体中的离子与自由基的比例进行调适的方法与设备，以克服逻辑器件特定的尺寸变化的挑战。
发明内容
在本发明的一实施例中，一种用于在基板上形成薄膜的方法包括以下步骤：在第一压力下于处理腔室的处理区域中自第一气体生成第一等离子体，在第二压力下于所述处理区域外部自第二气体生成第二等离子体，将一流量的所述第二等离子体引入所述处理区域中以与所述第一等离子体混合，以及加热位于所述处理区域内的基板支座上的基板。
在另一实施例中，一种用于在基板上形成薄膜的反应器包括处理腔室、气源、射频(RF)源、远端等离子体源以及真空泵；所述处理腔室具有盖体、侧壁和基板支座，所述盖体、侧壁和基板支座经定位以形成处理区域；所述气源耦接至所述腔室且配置成输送处理气体至所述处理区域；所述RF源耦接至所述处理腔室且配置成于所述处理区域中生成所述处理气体的第一等离子体；所述远端等离子体源耦接至所述腔室且配置成输送在第一压力下生成的第二等离子体至所述处理区域，以与所述第一等离子体混合；所述真空泵耦接至所述处理腔室且配置成使所述处理区域保持处于第二压力，其中所述第一压力大于所述第二压力。所述基板支座包括加热器，所述加热器配置成对置于所述基板支座上的基板加热至至少约500℃的温度。
附图说明
为详细了解本发明的上述特征，可参照实施例来了解本发明的更具体说明(简要说明如前所述)，部分实施例图示于所附的附图中。然而应注意，所附附图仅图示了本发明的典型实施例，因而不应被视为对发明范位的限制，因为本发明也允许其他的等效实施例。
图1为半导体结构的示意截面图。
图2A为根据一实施例的反应器的示意截面图。
图2B为根据另一实施例的反应器的示意截面图。
图3为根据一实施例的处理程序的方块图。
具体实施方式
本发明的实施例提供了一种用于等离子体处理基板的方法与设备，以通过在给定压力下控制等离子体中离子与自由基的比例而在基板上及置于基板上的器件上形成薄膜。可维持给定压力以利用一个等离子体源促进离子产生，并可使用第二等离子体源来提供其他的自由基。在一实施例中，在处理区域中生成低压等离子体，并在单独区域中生成高压等离子体，所述处理区域具有位于所述处理区域中的基板。来自高压等离子体的自由基被注入到具有低压等离子体的处理区域中，因而在给定操作压力下改变自由基对离子的自然分布。所得到的处理和设备能够调适离子与自由基的比例，以更好地控制在高纵横比特征结构上形成薄膜，并因而提升角区磨圆、侧壁对底部沟槽成长的共形性，以及选择性成长。
图1是半导体结构100的示意截面图。结构100可包括基板110，所述基板100上设置有多个特征结构120。基板110可包含诸如结晶硅、氧化硅、锗化硅、掺杂或未掺杂的多晶硅、掺杂或未掺杂的硅晶圆、图案化或未经图案化的硅晶圆、掺碳的氧化硅、氮化硅、砷化镓、玻璃、蓝宝石等之类的材料。
在一实施例中，特征结构120为薄膜堆叠，所述薄膜堆叠需要在上方形成薄膜，例如氧化物或氮化物。举例而言，特征结构120可以是栅极堆叠的闪存单元，所述闪存单元包括以下的层中的一个或多个：隧道氧化物层、浮动栅极层、单层或多层的介电层，以及控制栅极层。
特征结构120可为高纵横比的特征结构，在特征结构之间形成有沟槽130。每一沟槽130是由侧壁132、134与底壁136所界定。当在具有高纵横比特征结构120的结构100上形成薄膜时，难以维持侧壁132、134以及底壁136上的共形成长。此外，角区磨圆有利于避免特征结构120上的尖锐角区，以及避免在沟槽130的顶侧处的特征结构120上成长的薄膜的“夹断”(pinching off)。
当在所希望的压力下对结构100进行等离子体处理时，产生了给定数量的离子150(即带电原子)与自由基160(即中性原子)。也就是说，离子150与自由基160的比例依赖于压力。已发现离子150与自由基160的方向性也依赖于所使用的压力。举例而言，在底部特征结构例如底壁136上成长希望是低压(例如低于500毫托耳)，因为当处理压力高时，离子150与自由基160会碰撞并被推至侧壁132、134，而不会抵达底壁136。
然而，由于离子的自然电荷之故，在低压等离子体中的离子150会朝向施加有偏压的基板110而加速，此加速导致在底壁136处的薄膜成长比在侧壁132、134处更多。因此，离子150基于通孔与压力两者而呈现方向性，而自由基160(所述自由基160为中性)不呈现相同的方向性。因此，在某些实施例中，在高纵横比的特征结构上成长薄膜时，为了更好地控制共形性与角区磨圆，增加处理区域中自由基160的数量而不提高压力是所希望的。
图2A为根据本发明一实施例的反应器200的示意截面图。反应器包括腔室210，腔室210具有圆柱形侧壁212和顶篷214，顶篷214可为穹顶形(如图所示)、平板形，或其他几何形状中的任一种。在顶篷214上方可设置等离子体源功率施加器，所述等离子体源功率施加器具有线圈天线216且经由第一阻抗匹配网路218而耦接至功率源。功率源可具有RF功率产生器220以及栅极222，所述栅极222在功率产生器220的输出处。
反应器200还可包括基板支座平台226，所述基板支座平台226可为用于固持基板110(例如200mm或300mm的晶圆等)的静电夹盘或其他适合的基板支座。加热器234置于基板支座平台226内，加热器234可以是单区或多区加热器，例如具有径向内部和外部加热元件234a和234b的双径向区加热器，如图2A所示。在一实施例中，加热器234配置成加热基板110至约500℃或更高的温度，例如约700℃或更高的温度。
基板支座平台226是由杆体290所支撑。杆体290容纳加热器234的线路292以及位于平台226内的电极(未图示)，所述电极用于对基板110施加偏压，以处理(例如电容式等离子体处理)和/或夹持所述基板110。在一实施例中，致动器组件295加装至所述杆体290，且致动器装置295配置成在处理期间旋转所述平台226并由此旋转位于平台226上的基板110，以提供更均匀的处理，特别是在使用图2B(以下说明)所示的处理配置时。
此外，反应器200包括气体注入系统228以及真空泵230，所述真空泵230耦接至腔室210的内部。气体注入系统228由气源所供应，所述气源可包括氧贮罐232、氢贮罐262和/或氮贮罐270。也可包括其他的处理气源，例如水蒸汽源和惰性气源(未图示)。流量控制阀266、264与268可分别耦接至氧贮罐232、氢贮罐262和氮贮罐270，且所述流量控制阀266、264与268可用以在处理期间选择性地对腔室210的处理区域239提供处理气体或处理气体混合物。也可设有用于提供其他气体或气体混合物的其他气源(未图示)。腔室210内部的压力可通过真空泵230的节流阀238予以控制。在一实施例中，真空泵230与节流阀238配置成将腔室210内部的压力控制在约500毫托耳或更低的压力下，例如约150毫托耳或更低。
另一气体注入系统229流体耦接至远端等离子体源280，例如微波式、电容耦接式，或电感耦接式的远端等离子体源。在一实施例中，远端等离子体源配置成在约1托耳或更高的压力下生成等离子体。气体注入系统229由气源所供应，所述气源可包括氧贮罐233、氢贮罐263和/或氮贮罐271。流量控制阀267、265与269可分别耦接至氧贮罐233、氢贮罐263与氮贮罐271，且所述流量控制阀267、265与269可用以选择性地对远端等离子体源280提供处理气体或处理气体混合物。
在一实施例中，如图2A所示，气体注入系统229包括喷淋头288，所述喷淋头288具有多个孔口以从远端等离子体源280均匀地将等离子体引入腔室210的处理区域239中。然而，也可以替代为经由图2B所示的单一孔口289而引入等离子体。
图2B是根据另一实施例的反应器200的示意截面图。图2B中所示的反应器200与图2A中的反应器200相同，除了气体注入系统229的位置以外。在图2A中所示的气体注入系统229经定位以从远端等离子体源280经由腔室210的顶篷214将等离子体引入处理区域239中；图2B中所示的气体注入系统229经定位以从远端等离子体源280经由侧壁212中的单一孔口289将等离子体引入处理区域239中。
氧贮罐232、233可容纳含氧气体，例如氧(O2)、臭氧(O3)、一氧化二氮(N2O)，或一氧化氮(NO)。氢贮罐262、263可容纳含氢气体，例如氢气(H2)。氮贮罐270、271可包含含氮气体，例如氮气(N2)、氨(NH3)，或联氨(N2H4)。
图3为根据本发明一实施例的处理程序300的方块图，所述处理程序300用于在基板(例如基板110)上形成薄膜。在一实施例中，在处理程序300的方块310中，先将上面形成有特征结构120的基板110定位于基板平台226上。基板110可经由位于腔室210的侧壁212内的狭缝阀(未图示)而传送至腔室210中。在方块320中，处理气体可经由气体注入系统228而输送至处理区域239中。在希望氧化处理的实施例中，含氧气体可从氧贮罐232供应，而含氢气体可从氢贮罐262供应。在希望氮化处理的另一实施例中，含氮气体可由氮贮罐270供应，而含氢气体可由氢贮罐262供应。在方块330中，供应至处理区域239的气体或气体混合物在低压力(例如约500毫托耳或更低)下在处理区域239内被激发为等离子体。
在方块340中，处理气体可输送至远端等离子体源280。在希望氧化处理的实施例中，含氧气体可由氧贮罐233供应，而含氢气体可由氢贮罐263供应。在希望氮化处理的另一实施例中，含氮气体可由氮贮罐271供应，而含氢气体可由氢贮罐263所供应。在方块350中，气体或气体混合物在高压力(例如约1托耳或更高)下在远端等离子体源280内被激发为等离子体。
在方块360中，在远端等离子体源280内生成的等离子体被引入处理区域239中。由于在远端等离子体源280内产生的等离子体是在高压下生成，且由于所产生之自由基数量比在这种此等高压下生成的离子数量高出许多，所以从远端等离子体源280引入的等离子体具有极高的自由基与离子的比例。因此，由远端等离子体源280引入的过剩的自由基与在处理区域239中生成的等离子体混合。此外，由于处理区域239中的压力处于所希望的低压力下，故离子的方向性得以维持而不对等离子体混合物中的自由基的方向性有不利影响。所得到的处理程序能够在给定操作压力下改变自由基与离子的自然分布，进而能够调适离子与自由基的比例，以更好地控制角区磨圆、侧壁对底壁成长，以及选择性成长。
尽管前述说明是针对本发明的实施例，但可推知本发明的其他的和进一步的实施例而不背离本发明的基本范围，本发明的基本范围是由下述权利要求所决定。

Claims (15)

1.一种用于在基板上形成薄膜的方法，所述方法包括以下步骤：
在第一压力下，于处理腔室的处理区域中自第一气体生成第一等离子体；
在第二压力下，于所述处理区域的外部自第二气体生成第二等离子体；
将一流量的所述第二等离子体引入所述处理区域中，以与所述第一等离子体混合；以及
加热所述基板，所述基板位于所述处理区域内的基板支座上，其中所述第一压力低于所述第二压力。
2.如权利要求1的方法，其中所述第一压力为500毫托耳或更低。
3.如权利要求2的方法，其中所述第二压力为至少1托耳。
4.如权利要求1的方法，其中所述第一等离子体为感应生成。
5.如权利要求4的方法，其中所述第二等离子体由远端等离子体源所生成。
6.如权利要求1的方法，其中所述第二等离子体是经由单一孔口而引入所述处理区域中。
7.如权利要求1的方法，其中所述第二等离子体是经由气体分配板而引入所述处理区域中。
8.如权利要求1的方法，其中所述基板加热至至少500℃。
9.如权利要求1的方法，进一步包括以下步骤：在所述处理区域内旋转所述基板。
10.一种用于在基板上形成薄膜的反应器，所述反应器包括：
处理腔室，所述处理腔室具有盖体、侧壁和基板支座，所述盖体、侧壁和基板支座经定位以形成处理区域，其中所述基板支座包括加热器，所述加热器配置成加热置于所述基板支座上的基板达至少500℃的温度；
气源，所述气源耦接至所述腔室且配置成输送处理气体至所述处理区域中；
射频源，所述射频源耦接至所述处理腔室且配置成在所述处理区域中生成所述处理气体的第一等离子体；
远端等离子体源，所述远端等离子体源耦接至所述腔室且配置成输送在第一压力下生成的第二等离子体至所述处理区域中以与所述第一等离子体混合；以及
真空泵，所述真空泵耦接至所述处理腔室且配置成使所述处理区域保持处于第二压力，其中所述第一压力大于所述第二压力。
11.如权利要求10的反应器，其中所述第二等离子体是经由单一孔口而输送至所述处理区域。
12.如权利要求10的反应器，进一步包括喷淋头，所述喷淋头位于所述处理腔室中，其中所述第二等离子体是经由所述喷淋头而输送至所述处理区域。
13.如权利要求10的反应器，进一步包括致动器，所述致动器耦接至所述基板支座且配置成在处理期间旋转所述基板支座。
14.如权利要求10的反应器，其中所述第二压力为500毫托耳或更低。
15.如权利要求14的反应器，其中所述第一压力为至少1托耳。
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