CN101809715B - 用于制造负离子等离子体的处理系统 - Google Patents

用于制造负离子等离子体的处理系统 Download PDF

Info

Publication number
CN101809715B
CN101809715B CN2008801092291A CN200880109229A CN101809715B CN 101809715 B CN101809715 B CN 101809715B CN 2008801092291 A CN2008801092291 A CN 2008801092291A CN 200880109229 A CN200880109229 A CN 200880109229A CN 101809715 B CN101809715 B CN 101809715B
Authority
CN
China
Prior art keywords
coupled
room
plasma
chamber region
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008801092291A
Other languages
English (en)
Chinese (zh)
Other versions
CN101809715A (zh
Inventor
陈立
麦里特·法克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101809715A publication Critical patent/CN101809715A/zh
Application granted granted Critical
Publication of CN101809715B publication Critical patent/CN101809715B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)
CN2008801092291A 2007-09-27 2008-09-22 用于制造负离子等离子体的处理系统 Expired - Fee Related CN101809715B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/862,358 2007-09-27
US11/862,358 US20090084501A1 (en) 2007-09-27 2007-09-27 Processing system for producing a negative ion plasma
PCT/US2008/077163 WO2009042534A1 (en) 2007-09-27 2008-09-22 Processing system for producing a negative ion plasma

Publications (2)

Publication Number Publication Date
CN101809715A CN101809715A (zh) 2010-08-18
CN101809715B true CN101809715B (zh) 2012-11-14

Family

ID=40506851

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801092291A Expired - Fee Related CN101809715B (zh) 2007-09-27 2008-09-22 用于制造负离子等离子体的处理系统

Country Status (6)

Country Link
US (1) US20090084501A1 (enExample)
JP (1) JP5659425B2 (enExample)
KR (1) KR101419975B1 (enExample)
CN (1) CN101809715B (enExample)
TW (1) TWI505352B (enExample)
WO (1) WO2009042534A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939173B1 (fr) * 2008-11-28 2010-12-17 Ecole Polytech Propulseur a plasma electronegatif a injection optimisee.
US8323521B2 (en) * 2009-08-12 2012-12-04 Tokyo Electron Limited Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques
US8642974B2 (en) * 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
CN103262220A (zh) * 2010-12-16 2013-08-21 日立造船株式会社 利用电子束技术产生臭氧和等离子体
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
US9039911B2 (en) * 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
CN103290392A (zh) * 2012-03-01 2013-09-11 苏州汇智真空科技有限公司 共用电极的等离子体增强化学气相沉积装置及方法
US9431218B2 (en) 2013-03-15 2016-08-30 Tokyo Electron Limited Scalable and uniformity controllable diffusion plasma source
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) * 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
KR101799915B1 (ko) 2013-07-09 2017-11-21 피닉스 뉴클리어 랩스 엘엘씨 높은 신뢰성, 긴 수명, 음이온 소스
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
JP6247087B2 (ja) * 2013-12-18 2017-12-13 東京エレクトロン株式会社 処理装置および活性種の生成方法
US9288890B1 (en) * 2014-10-31 2016-03-15 Tokyo Electron Limited Method and apparatus for providing an anisotropic and mono-energetic neutral beam by non-ambipolar electron plasma
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
US10475626B2 (en) 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
CN105826220A (zh) * 2016-03-18 2016-08-03 华灿光电股份有限公司 一种干法刻蚀设备
US10062585B2 (en) * 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10354883B2 (en) * 2017-10-03 2019-07-16 Mattson Technology, Inc. Surface treatment of silicon or silicon germanium surfaces using organic radicals
US11462386B2 (en) * 2018-12-17 2022-10-04 Applied Materials, Inc. Electron beam apparatus for optical device fabrication
US20220119954A1 (en) * 2019-02-07 2022-04-21 Lam Research Corporation Substrate processing tool capable of modulating one or more plasma temporally and/or spatially
CN110335802B (zh) * 2019-07-11 2022-03-22 北京北方华创微电子装备有限公司 预清洗腔室及其过滤装置
US20230031722A1 (en) * 2021-07-23 2023-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Voltage Control for Etching Systems

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284544A (en) * 1990-02-23 1994-02-08 Hitachi, Ltd. Apparatus for and method of surface treatment for microelectronic devices
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
CN1242594A (zh) * 1998-06-12 2000-01-26 日新电机株式会社 注入氢负离子的方法及注入设备
US6138606A (en) * 1995-08-14 2000-10-31 Advanced Materials Engineering Research, Inc. Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility
US6335535B1 (en) * 1998-06-26 2002-01-01 Nissin Electric Co., Ltd Method for implanting negative hydrogen ion and implanting apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2819420B2 (ja) * 1989-11-20 1998-10-30 東京エレクトロン株式会社 イオン源
EP0977470A3 (en) * 1994-03-17 2003-11-19 Fuji Electric Co., Ltd. Method and apparatus for generating induced plasma
JP2942138B2 (ja) * 1994-03-22 1999-08-30 三菱電機株式会社 プラズマ処理装置及びプラズマ処理方法
US5969470A (en) * 1996-11-08 1999-10-19 Veeco Instruments, Inc. Charged particle source
JP3647303B2 (ja) * 1998-09-22 2005-05-11 キヤノン株式会社 プラズマ処理装置及びそれを用いた処理方法
US6635580B1 (en) * 1999-04-01 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for controlling wafer temperature in a plasma etcher
DE10024883A1 (de) * 2000-05-19 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
JP2002289585A (ja) * 2001-03-26 2002-10-04 Ebara Corp 中性粒子ビーム処理装置
US6667475B1 (en) * 2003-01-08 2003-12-23 Applied Materials, Inc. Method and apparatus for cleaning an analytical instrument while operating the analytical instrument
JP2004281230A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP2004281232A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP4135541B2 (ja) * 2003-03-26 2008-08-20 ソニー株式会社 プラズマ表面処理方法
WO2005054127A1 (ja) * 2003-12-03 2005-06-16 Ideal Star Inc. 誘導フラーレンの製造装置及び製造方法
US20060174835A1 (en) * 2005-02-10 2006-08-10 Misako Saito Vacuum processing apparatus and method of using the same
JP2007005021A (ja) * 2005-06-21 2007-01-11 Ideal Star Inc プラズマ源、フラーレンベース材料の製造方法及び製造装置
JP2007088199A (ja) * 2005-09-22 2007-04-05 Canon Inc 処理装置
US7358484B2 (en) * 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284544A (en) * 1990-02-23 1994-02-08 Hitachi, Ltd. Apparatus for and method of surface treatment for microelectronic devices
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
US6138606A (en) * 1995-08-14 2000-10-31 Advanced Materials Engineering Research, Inc. Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility
CN1242594A (zh) * 1998-06-12 2000-01-26 日新电机株式会社 注入氢负离子的方法及注入设备
US6335535B1 (en) * 1998-06-26 2002-01-01 Nissin Electric Co., Ltd Method for implanting negative hydrogen ion and implanting apparatus

Also Published As

Publication number Publication date
CN101809715A (zh) 2010-08-18
TWI505352B (zh) 2015-10-21
JP5659425B2 (ja) 2015-01-28
US20090084501A1 (en) 2009-04-02
JP2010541167A (ja) 2010-12-24
KR101419975B1 (ko) 2014-07-16
TW200924051A (en) 2009-06-01
KR20100080913A (ko) 2010-07-13
WO2009042534A1 (en) 2009-04-02

Similar Documents

Publication Publication Date Title
CN101809715B (zh) 用于制造负离子等离子体的处理系统
US8460567B2 (en) Method and system for etching a MEM device
TWI333225B (en) Method and apparatus to confine plasma and to enhance flow conductance
CN104867827B (zh) 蚀刻方法
US7732759B2 (en) Multi-plasma neutral beam source and method of operating
US10734200B2 (en) Mono-energetic neutral beam activated chemical processing system and method of using
CN104851794B (zh) 蚀刻方法和等离子体处理装置
TWI632833B (zh) 電漿處理裝置及使用彼之電漿處理方法
JP3987131B2 (ja) 誘導増強された反応性イオンエッチング
US8574445B2 (en) Method for generating hollow cathode plasma and method for treating large area substrate using hollow cathode plasma
US7638759B2 (en) Hyperthermal neutral beam source and method of operating
US6861643B2 (en) Neutral particle beam processing apparatus
US7034285B2 (en) Beam source and beam processing apparatus
US7772544B2 (en) Neutral beam source and method for plasma heating
JP2002289399A (ja) 中性粒子ビーム処理装置
CN103107055A (zh) 用于电感耦合等离子体源的内部分离法拉第屏蔽
CN112951698B (zh) 等离子体处理方法及等离子体处理装置
KR102414852B1 (ko) 에너지 중성자를 생성하기 위한 시스템들 및 방법들
US20240290625A1 (en) Plasma processing apparatus
JP4342984B2 (ja) エッチング方法
JP2005260195A (ja) エッチング装置
Berry Plasma processing for integrated circuits
JP6489998B2 (ja) プラズマ発生部およびプラズマスパッタ装置
CN105097402A (zh) 等离子体处理腔室及其直流电极和加热装置的复合组件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121114

Termination date: 20210922

CF01 Termination of patent right due to non-payment of annual fee