TWI505352B - 產生負離子電漿用之處理系統 - Google Patents
產生負離子電漿用之處理系統 Download PDFInfo
- Publication number
- TWI505352B TWI505352B TW097137291A TW97137291A TWI505352B TW I505352 B TWI505352 B TW I505352B TW 097137291 A TW097137291 A TW 097137291A TW 97137291 A TW97137291 A TW 97137291A TW I505352 B TWI505352 B TW I505352B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- plasma
- chamber region
- coupled
- pressure
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 100
- 150000002500 ions Chemical class 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 47
- 230000007935 neutral effect Effects 0.000 claims description 44
- 238000006386 neutralization reaction Methods 0.000 claims description 29
- 238000005192 partition Methods 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 230000003068 static effect Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000010791 quenching Methods 0.000 claims description 7
- 230000006698 induction Effects 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 6
- 230000003472 neutralizing effect Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 76
- 239000002245 particle Substances 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical group [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000009931 pascalization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/862,358 US20090084501A1 (en) | 2007-09-27 | 2007-09-27 | Processing system for producing a negative ion plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200924051A TW200924051A (en) | 2009-06-01 |
| TWI505352B true TWI505352B (zh) | 2015-10-21 |
Family
ID=40506851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097137291A TWI505352B (zh) | 2007-09-27 | 2008-09-26 | 產生負離子電漿用之處理系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090084501A1 (enExample) |
| JP (1) | JP5659425B2 (enExample) |
| KR (1) | KR101419975B1 (enExample) |
| CN (1) | CN101809715B (enExample) |
| TW (1) | TWI505352B (enExample) |
| WO (1) | WO2009042534A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2939173B1 (fr) * | 2008-11-28 | 2010-12-17 | Ecole Polytech | Propulseur a plasma electronegatif a injection optimisee. |
| US8323521B2 (en) * | 2009-08-12 | 2012-12-04 | Tokyo Electron Limited | Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques |
| US8642974B2 (en) * | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
| US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| CN103262220A (zh) * | 2010-12-16 | 2013-08-21 | 日立造船株式会社 | 利用电子束技术产生臭氧和等离子体 |
| WO2012112187A1 (en) * | 2011-02-15 | 2012-08-23 | Applied Materials, Inc. | Method and apparatus for multizone plasma generation |
| US9039911B2 (en) * | 2012-08-27 | 2015-05-26 | Lam Research Corporation | Plasma-enhanced etching in an augmented plasma processing system |
| CN103290392A (zh) * | 2012-03-01 | 2013-09-11 | 苏州汇智真空科技有限公司 | 共用电极的等离子体增强化学气相沉积装置及方法 |
| US9431218B2 (en) | 2013-03-15 | 2016-08-30 | Tokyo Electron Limited | Scalable and uniformity controllable diffusion plasma source |
| US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| US9230819B2 (en) * | 2013-04-05 | 2016-01-05 | Lam Research Corporation | Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing |
| KR101799915B1 (ko) | 2013-07-09 | 2017-11-21 | 피닉스 뉴클리어 랩스 엘엘씨 | 높은 신뢰성, 긴 수명, 음이온 소스 |
| US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
| JP6247087B2 (ja) * | 2013-12-18 | 2017-12-13 | 東京エレクトロン株式会社 | 処理装置および活性種の生成方法 |
| US9288890B1 (en) * | 2014-10-31 | 2016-03-15 | Tokyo Electron Limited | Method and apparatus for providing an anisotropic and mono-energetic neutral beam by non-ambipolar electron plasma |
| JP6584786B2 (ja) * | 2015-02-13 | 2019-10-02 | 株式会社日立ハイテクノロジーズ | プラズマイオン源および荷電粒子ビーム装置 |
| US10475626B2 (en) | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
| CN105826220A (zh) * | 2016-03-18 | 2016-08-03 | 华灿光电股份有限公司 | 一种干法刻蚀设备 |
| US10062585B2 (en) * | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10354883B2 (en) * | 2017-10-03 | 2019-07-16 | Mattson Technology, Inc. | Surface treatment of silicon or silicon germanium surfaces using organic radicals |
| US11462386B2 (en) * | 2018-12-17 | 2022-10-04 | Applied Materials, Inc. | Electron beam apparatus for optical device fabrication |
| US20220119954A1 (en) * | 2019-02-07 | 2022-04-21 | Lam Research Corporation | Substrate processing tool capable of modulating one or more plasma temporally and/or spatially |
| CN110335802B (zh) * | 2019-07-11 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 预清洗腔室及其过滤装置 |
| US20230031722A1 (en) * | 2021-07-23 | 2023-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Voltage Control for Etching Systems |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468955A (en) * | 1994-12-20 | 1995-11-21 | International Business Machines Corporation | Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer |
| US6138606A (en) * | 1995-08-14 | 2000-10-31 | Advanced Materials Engineering Research, Inc. | Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility |
| US6335535B1 (en) * | 1998-06-26 | 2002-01-01 | Nissin Electric Co., Ltd | Method for implanting negative hydrogen ion and implanting apparatus |
| US20040221815A1 (en) * | 2003-03-14 | 2004-11-11 | Akira Fukuda | Beam source and beam processing apparatus |
| US20060174835A1 (en) * | 2005-02-10 | 2006-08-10 | Misako Saito | Vacuum processing apparatus and method of using the same |
| US20070062645A1 (en) * | 2005-09-22 | 2007-03-22 | Canon Kabushiki Kaisha | Processing apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2819420B2 (ja) * | 1989-11-20 | 1998-10-30 | 東京エレクトロン株式会社 | イオン源 |
| KR910016054A (ko) * | 1990-02-23 | 1991-09-30 | 미다 가쓰시게 | 마이크로 전자 장치용 표면 처리 장치 및 그 방법 |
| EP0977470A3 (en) * | 1994-03-17 | 2003-11-19 | Fuji Electric Co., Ltd. | Method and apparatus for generating induced plasma |
| JP2942138B2 (ja) * | 1994-03-22 | 1999-08-30 | 三菱電機株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US5969470A (en) * | 1996-11-08 | 1999-10-19 | Veeco Instruments, Inc. | Charged particle source |
| CN1169191C (zh) * | 1998-06-12 | 2004-09-29 | 日新电机株式会社 | 注入氢负离子的方法及注入设备 |
| JP3647303B2 (ja) * | 1998-09-22 | 2005-05-11 | キヤノン株式会社 | プラズマ処理装置及びそれを用いた処理方法 |
| US6635580B1 (en) * | 1999-04-01 | 2003-10-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Apparatus and method for controlling wafer temperature in a plasma etcher |
| DE10024883A1 (de) * | 2000-05-19 | 2001-11-29 | Bosch Gmbh Robert | Plasmaätzanlage |
| JP2002289585A (ja) * | 2001-03-26 | 2002-10-04 | Ebara Corp | 中性粒子ビーム処理装置 |
| US6667475B1 (en) * | 2003-01-08 | 2003-12-23 | Applied Materials, Inc. | Method and apparatus for cleaning an analytical instrument while operating the analytical instrument |
| JP2004281232A (ja) * | 2003-03-14 | 2004-10-07 | Ebara Corp | ビーム源及びビーム処理装置 |
| JP4135541B2 (ja) * | 2003-03-26 | 2008-08-20 | ソニー株式会社 | プラズマ表面処理方法 |
| WO2005054127A1 (ja) * | 2003-12-03 | 2005-06-16 | Ideal Star Inc. | 誘導フラーレンの製造装置及び製造方法 |
| JP2007005021A (ja) * | 2005-06-21 | 2007-01-11 | Ideal Star Inc | プラズマ源、フラーレンベース材料の製造方法及び製造装置 |
| US7358484B2 (en) * | 2005-09-29 | 2008-04-15 | Tokyo Electron Limited | Hyperthermal neutral beam source and method of operating |
-
2007
- 2007-09-27 US US11/862,358 patent/US20090084501A1/en not_active Abandoned
-
2008
- 2008-09-22 KR KR1020107008983A patent/KR101419975B1/ko not_active Expired - Fee Related
- 2008-09-22 JP JP2010527060A patent/JP5659425B2/ja not_active Expired - Fee Related
- 2008-09-22 CN CN2008801092291A patent/CN101809715B/zh not_active Expired - Fee Related
- 2008-09-22 WO PCT/US2008/077163 patent/WO2009042534A1/en not_active Ceased
- 2008-09-26 TW TW097137291A patent/TWI505352B/zh not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468955A (en) * | 1994-12-20 | 1995-11-21 | International Business Machines Corporation | Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer |
| US6138606A (en) * | 1995-08-14 | 2000-10-31 | Advanced Materials Engineering Research, Inc. | Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility |
| US6335535B1 (en) * | 1998-06-26 | 2002-01-01 | Nissin Electric Co., Ltd | Method for implanting negative hydrogen ion and implanting apparatus |
| US20040221815A1 (en) * | 2003-03-14 | 2004-11-11 | Akira Fukuda | Beam source and beam processing apparatus |
| US20060174835A1 (en) * | 2005-02-10 | 2006-08-10 | Misako Saito | Vacuum processing apparatus and method of using the same |
| US20070062645A1 (en) * | 2005-09-22 | 2007-03-22 | Canon Kabushiki Kaisha | Processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101809715A (zh) | 2010-08-18 |
| CN101809715B (zh) | 2012-11-14 |
| JP5659425B2 (ja) | 2015-01-28 |
| US20090084501A1 (en) | 2009-04-02 |
| JP2010541167A (ja) | 2010-12-24 |
| KR101419975B1 (ko) | 2014-07-16 |
| TW200924051A (en) | 2009-06-01 |
| KR20100080913A (ko) | 2010-07-13 |
| WO2009042534A1 (en) | 2009-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |