JP2010541167A5 - - Google Patents

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Publication number
JP2010541167A5
JP2010541167A5 JP2010527060A JP2010527060A JP2010541167A5 JP 2010541167 A5 JP2010541167 A5 JP 2010541167A5 JP 2010527060 A JP2010527060 A JP 2010527060A JP 2010527060 A JP2010527060 A JP 2010527060A JP 2010541167 A5 JP2010541167 A5 JP 2010541167A5
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JP
Japan
Prior art keywords
chamber
pressure
coupled
processing system
plasma
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JP2010527060A
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English (en)
Japanese (ja)
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JP5659425B2 (ja
JP2010541167A (ja
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Priority claimed from US11/862,358 external-priority patent/US20090084501A1/en
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Publication of JP2010541167A publication Critical patent/JP2010541167A/ja
Publication of JP2010541167A5 publication Critical patent/JP2010541167A5/ja
Application granted granted Critical
Publication of JP5659425B2 publication Critical patent/JP5659425B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010527060A 2007-09-27 2008-09-22 負イオンプラズマを生成する処理システムおよび中性ビーム源 Expired - Fee Related JP5659425B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/862,358 2007-09-27
US11/862,358 US20090084501A1 (en) 2007-09-27 2007-09-27 Processing system for producing a negative ion plasma
PCT/US2008/077163 WO2009042534A1 (en) 2007-09-27 2008-09-22 Processing system for producing a negative ion plasma

Publications (3)

Publication Number Publication Date
JP2010541167A JP2010541167A (ja) 2010-12-24
JP2010541167A5 true JP2010541167A5 (enExample) 2011-10-27
JP5659425B2 JP5659425B2 (ja) 2015-01-28

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Family Applications (1)

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JP2010527060A Expired - Fee Related JP5659425B2 (ja) 2007-09-27 2008-09-22 負イオンプラズマを生成する処理システムおよび中性ビーム源

Country Status (6)

Country Link
US (1) US20090084501A1 (enExample)
JP (1) JP5659425B2 (enExample)
KR (1) KR101419975B1 (enExample)
CN (1) CN101809715B (enExample)
TW (1) TWI505352B (enExample)
WO (1) WO2009042534A1 (enExample)

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US9039911B2 (en) * 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
CN103290392A (zh) * 2012-03-01 2013-09-11 苏州汇智真空科技有限公司 共用电极的等离子体增强化学气相沉积装置及方法
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US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) * 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
KR101799915B1 (ko) 2013-07-09 2017-11-21 피닉스 뉴클리어 랩스 엘엘씨 높은 신뢰성, 긴 수명, 음이온 소스
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
JP6247087B2 (ja) * 2013-12-18 2017-12-13 東京エレクトロン株式会社 処理装置および活性種の生成方法
US9288890B1 (en) * 2014-10-31 2016-03-15 Tokyo Electron Limited Method and apparatus for providing an anisotropic and mono-energetic neutral beam by non-ambipolar electron plasma
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
US10475626B2 (en) 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
CN105826220A (zh) * 2016-03-18 2016-08-03 华灿光电股份有限公司 一种干法刻蚀设备
US10062585B2 (en) * 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10354883B2 (en) * 2017-10-03 2019-07-16 Mattson Technology, Inc. Surface treatment of silicon or silicon germanium surfaces using organic radicals
US11462386B2 (en) * 2018-12-17 2022-10-04 Applied Materials, Inc. Electron beam apparatus for optical device fabrication
US20220119954A1 (en) * 2019-02-07 2022-04-21 Lam Research Corporation Substrate processing tool capable of modulating one or more plasma temporally and/or spatially
CN110335802B (zh) * 2019-07-11 2022-03-22 北京北方华创微电子装备有限公司 预清洗腔室及其过滤装置
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