JP5645348B2 - 可動式台座部を用いた研磨ヘッド試験 - Google Patents
可動式台座部を用いた研磨ヘッド試験 Download PDFInfo
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- JP5645348B2 JP5645348B2 JP2008065885A JP2008065885A JP5645348B2 JP 5645348 B2 JP5645348 B2 JP 5645348B2 JP 2008065885 A JP2008065885 A JP 2008065885A JP 2008065885 A JP2008065885 A JP 2008065885A JP 5645348 B2 JP5645348 B2 JP 5645348B2
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- 238000012360 testing method Methods 0.000 title claims description 282
- 238000005498 polishing Methods 0.000 title claims description 112
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims description 102
- 239000012528 membrane Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 240
- 239000000758 substrate Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- 230000032258 transport Effects 0.000 description 11
- 239000003570 air Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 pedestal 450 Chemical compound 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0053—Control means for lapping machines or devices detecting loss or breakage of a workpiece during lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Description
Claims (13)
- 試験ウェハを用いて半導体ウェハの平坦化用の研磨ヘッドを試験するための試験ステーションであり、
フレームと、
試験ウェハを支持するように用いられる中央ウェハ支持表面を有する台座部と、
中央ウェハ支持表面の周囲に位置する第1の複数の試験ウェハ係合部材を有する試験ウェハポジショナと、
前記研磨ヘッドを前記中央ウェハ支持表面上に取り付けるように用いられる研磨ヘッド取付台と、
前記研磨ヘッドに連結され、前記ヘッドに加圧試験を行うように用いられる空気圧回路と、
前記フレームと前記取付台に連結され、前記研磨ヘッドを前記台座部中央ウェハ支持表面に相対して垂直方向に移動するように用いられるヘッド取付アクチュエータと、
前記フレームと前記台座部に連結され、前記台座部中央ウェハ支持表面を前記フレームに相対して垂直方向に、前記取付台の前記ヘッドから垂直方向にずらした第1垂直位置と前記取付台の前記ヘッドに垂直方向により近い第2垂直位置との間で移動するように用いられる台座部アクチュエータを備え、
前記第1の複数の試験ウェハ係合部材の各々は、中央ウェハ支持表面が第1垂直位置にある場合に、前記中央ウェハ支持表面に対して前記試験ウェハを係合し位置決めするように用いられるそれぞれのウェハ係合表面を含み、
中央ウェハ支持表面は、中央ウェハ支持表面が第1垂直位置にある場合に、第1の複数の試験ウェハ係合部材のそれぞれのウェハ係合表面の下方にあり、中央ウェハ支持表面が第1垂直位置から第2垂直位置に移動したとき、第1の複数の試験ウェハ係合部材のそれぞれのウェハ係合表面から前記試験ウェハを持ち上げて解放するように用いられる試験ステーション。 - 前記ウェハポジショナがリング部材を備え、リング部材がその第1の円周に沿って分散された前記第1の複数の試験ウェハ係合部材を担持するように用いられる請求項1記載の試験ステーション。
- 前記台座部中央ウェハ支持表面により複数の開口部が規定され、前記台座部中央ウェハ支持表面が前記第1垂直位置にある場合に、各開口部が前記第1の複数の試験ウェハ係合部材の各試験ウェハ係合部材を収容するように用いられる請求項2記載の試験ステーション。
- 前記台座部が前記台座部中央ウェハ支持表面に沿って配置され、かつ試験ウェハを支持するように用いられる外側ウェハ支持表面を有し、前記ポジショナが前記リングによって担持され、前記台座部外側ウェハ支持表面に沿って位置され、前記リング部材の第2の円周に沿って分散された第2の複数の試験ウェハ係合部材を備え、前記第2の円周が前記第1の円周より広い直径を有している請求項2記載の試験ステーション。
- 前記第1及び第2の複数の試験ウェハ係合部材の各試験ウェハ係合部材が試験ウェハ係合表面を有し、前記第2の複数の試験ウェハ係合部材の各試験ウェハ係合表面が前記第1の複数の試験ウェハ係合部材の試験ウェハ係合表面よりも前記研磨ヘッドに近い垂直位置に配置される請求項4記載の試験ステーション。
- 前記フレームが上面を有する支持板を含み、支持板が前記台座部及び前記試験ウェハポジショナを前記上面より下に収容するように用いられる空洞部を規定しており、前記フレームが前記上面上に配置され、かつ前記台座部と試験ウェハポジショナを覆うように用いられる着脱式カバープレートを更に備えており、前記カバープレートが試験ウェハ支持表面を有している請求項1記載の試験ステーション。
- 半導体ウェハの平坦化用に研磨ヘッドを試験するための方法であり、
研磨ヘッドを試験ステーションの研磨ヘッド取付台に取り付け、
制御式ヘッド取付アクチュエータを制御して前記研磨ヘッドを台座部の中央ウェハ支持表面に相対して垂直方向に移動させ、
中央ウェハ支持表面の周囲に位置する第1の複数の試験ウェハ係合部材を有するウェハポジショナを用いて試験ウェハを位置決めし、前記位置決めは、前記第1の複数の試験ウェハ係合部材の各々のそれぞれの係合面と前記試験ウェハを係合させ、台座部の前記中央ウェハ支持表面に対して前記試験ウェハを位置決めすることを含み、
制御式台座部アクチュエータを制御して、前記台座部中央ウェハ支持表面と、前記台座部中央ウェハ支持表面上に配置された第1直径を有する試験ウェハとを、前記研磨ヘッドから垂直方向にずらした第1垂直位置と、前記研磨ヘッドに垂直方向により近い第2垂直位置との間で垂直方向に移動させ、中央ウェハ支持表面は、中央ウェハ支持表面が第1垂直位置にある場合に、前記第1の複数の試験ウェハ係合部材のそれぞれのウェハ係合表面の下方にあり、台座部の中央ウェハ支持表面が第1垂直位置から第2垂直位置に移動する間、台座部の中央ウェハ支持表面は、前記第1の複数の試験ウェハ係合部材のそれぞれのウェハ係合表面から前記試験ウェハを持ち上げて解放し、
前記研磨ヘッドを試験することを含む研磨ヘッドの試験方法。 - 前記試験がヘッドのウェハ喪失センサの試験を含む請求項7記載の方法。
- 前記試験が前記ヘッドの膜チャンバを減圧して前記台座部中央ウェハ支持表面上に配置された第1試験ウェハを拾い上げることを含む請求項8記載の方法。
- 前記試験が前記膜チャンバに対する前記減圧に先立って前記ヘッドの内管チャンバに加圧すること、及び、前記膜チャンバへの前記減圧を行いながら前記内管チャンバ内の圧力の監視を行うことを含む請求項9記載の方法。
- 前記ウェハポジショナがリング部材を備え、リング部材がその第1の円周に沿って分散された前記第1の複数の試験ウェハ係合部材を担持するように用いられる請求項10記載の方法。
- 制御式台座部アクチュエータの前記制御が、前記台座部を移動させることで、前記台座部中央ウェハ支持表面が前記第1垂直位置にある場合に、各試験ウェハ係合部材が前記台座部中央ウェハ支持表面によって規定された複数の開口部のそれぞれに収容されることを含む請求項11記載の方法。
- 前記第1直径よりも広い第2直径を有する試験ウェハを、前記台座部中央ウェハ支持表面に沿って配置された外側ウェハ支持表面に沿って位置され、かつ試験ウェハを支持するように用いられる第2の複数の試験ウェハ係合部材を有するポジショナを用いて位置決めすることを更に含み、前記第2の複数の試験ウェハ係合部材が前記リング部材の第2の円周に沿って分散されており、前記第2の円周が前記第1の円周よりも広い直径を有する請求項11記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US11/686,868 US7750657B2 (en) | 2007-03-15 | 2007-03-15 | Polishing head testing with movable pedestal |
US11/686,868 | 2007-03-15 |
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JP2008227510A JP2008227510A (ja) | 2008-09-25 |
JP2008227510A5 JP2008227510A5 (ja) | 2012-12-27 |
JP5645348B2 true JP5645348B2 (ja) | 2014-12-24 |
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US (2) | US7750657B2 (ja) |
EP (1) | EP1970161B1 (ja) |
JP (1) | JP5645348B2 (ja) |
KR (1) | KR100977914B1 (ja) |
CN (1) | CN101349616B (ja) |
IL (1) | IL190140A (ja) |
SG (1) | SG146564A1 (ja) |
TW (1) | TWI492815B (ja) |
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CN101349616A (zh) | 2009-01-21 |
KR20080084737A (ko) | 2008-09-19 |
JP2008227510A (ja) | 2008-09-25 |
US8008941B2 (en) | 2011-08-30 |
TW200846133A (en) | 2008-12-01 |
EP1970161B1 (en) | 2013-02-20 |
IL190140A (en) | 2012-01-31 |
KR100977914B1 (ko) | 2010-08-24 |
US20100327900A1 (en) | 2010-12-30 |
SG146564A1 (en) | 2008-10-30 |
EP1970161A1 (en) | 2008-09-17 |
US7750657B2 (en) | 2010-07-06 |
CN101349616B (zh) | 2010-12-15 |
US20080227374A1 (en) | 2008-09-18 |
TWI492815B (zh) | 2015-07-21 |
IL190140A0 (en) | 2008-12-29 |
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