JP5644105B2 - ショットキーバリアダイオードの製造方法 - Google Patents

ショットキーバリアダイオードの製造方法 Download PDF

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Publication number
JP5644105B2
JP5644105B2 JP2009506303A JP2009506303A JP5644105B2 JP 5644105 B2 JP5644105 B2 JP 5644105B2 JP 2009506303 A JP2009506303 A JP 2009506303A JP 2009506303 A JP2009506303 A JP 2009506303A JP 5644105 B2 JP5644105 B2 JP 5644105B2
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JP
Japan
Prior art keywords
manufacturing
barrier diode
schottky barrier
schottky
electrode
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Expired - Fee Related
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JP2009506303A
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English (en)
Japanese (ja)
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JPWO2008117718A1 (ja
Inventor
宮崎　富仁
富仁 宮崎
木山　誠
誠 木山
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2009506303A priority Critical patent/JP5644105B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Electrodes Of Semiconductors (AREA)
JP2009506303A 2007-03-26 2008-03-19 ショットキーバリアダイオードの製造方法 Expired - Fee Related JP5644105B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009506303A JP5644105B2 (ja) 2007-03-26 2008-03-19 ショットキーバリアダイオードの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007078275 2007-03-26
JP2007078275 2007-03-26
PCT/JP2008/055089 WO2008117718A1 (ja) 2007-03-26 2008-03-19 ショットキーバリアダイオードおよびその製造方法
JP2009506303A JP5644105B2 (ja) 2007-03-26 2008-03-19 ショットキーバリアダイオードの製造方法

Related Child Applications (1)

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JP2014166682A Division JP2014241436A (ja) 2007-03-26 2014-08-19 ショットキーバリアダイオードおよびその製造方法

Publications (2)

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JPWO2008117718A1 JPWO2008117718A1 (ja) 2010-07-15
JP5644105B2 true JP5644105B2 (ja) 2014-12-24

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JP2009506303A Expired - Fee Related JP5644105B2 (ja) 2007-03-26 2008-03-19 ショットキーバリアダイオードの製造方法
JP2014166682A Pending JP2014241436A (ja) 2007-03-26 2014-08-19 ショットキーバリアダイオードおよびその製造方法

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JP2014166682A Pending JP2014241436A (ja) 2007-03-26 2014-08-19 ショットキーバリアダイオードおよびその製造方法

Country Status (8)

Country Link
US (1) US20100224952A1 (enExample)
EP (1) EP2043157A4 (enExample)
JP (2) JP5644105B2 (enExample)
KR (1) KR20090127035A (enExample)
CN (1) CN101542736A (enExample)
CA (1) CA2652948A1 (enExample)
TW (1) TW200845401A (enExample)
WO (1) WO2008117718A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210751A (ja) * 2010-03-26 2011-10-20 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置
US8772144B2 (en) * 2011-11-11 2014-07-08 Alpha And Omega Semiconductor Incorporated Vertical gallium nitride Schottky diode
CN103208534A (zh) * 2013-04-03 2013-07-17 上海安微电子有限公司 一种制程简化的肖特基器件及制造方法
CN103199120A (zh) * 2013-04-23 2013-07-10 上海安微电子有限公司 一种台平面肖特基势垒二极管及其制备方法
WO2015006712A2 (en) * 2013-07-11 2015-01-15 Sixpoint Materials, Inc. An electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
JP6260553B2 (ja) * 2015-02-27 2018-01-17 豊田合成株式会社 半導体装置およびその製造方法

Citations (9)

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Publication number Priority date Publication date Assignee Title
JPS4813273B1 (enExample) * 1968-10-18 1973-04-26
JPS4822390B1 (enExample) * 1969-03-18 1973-07-05
JPS4827504B1 (enExample) * 1969-08-13 1973-08-23
JPS5712565A (en) * 1980-06-26 1982-01-22 Nec Corp Schottky barrier element
US6362495B1 (en) * 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
WO2003094240A1 (en) * 2002-04-30 2003-11-13 Cree, Inc. High voltage switching devices and process for forming same
JP2005236287A (ja) * 2004-02-17 2005-09-02 Emcore Corp 窒化物基半導体デバイスのための低ドープ層
JP2007036052A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 半導体整流素子
JP2009516391A (ja) * 2005-11-15 2009-04-16 ヴェロックス セミコンダクター コーポレーション ショットキーダイオードの性能を向上させる第２のショットキー接触金属層

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US3523223A (en) * 1967-11-01 1970-08-04 Texas Instruments Inc Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
JPS5158866A (ja) * 1974-11-18 1976-05-22 Matsushita Electronics Corp Shotsutokiishohekigatahandotaisochi oyobi sonoseizohoho
JPS5982774A (ja) * 1982-11-02 1984-05-12 Nec Corp 半導体装置
JPS59232467A (ja) * 1983-06-16 1984-12-27 Toshiba Corp ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド
GB8413170D0 (en) * 1984-05-23 1984-06-27 British Telecomm Production of semiconductor devices
JPH08139341A (ja) * 1994-11-11 1996-05-31 Murata Mfg Co Ltd ショットキ−バリアダイオ−ド
US5895260A (en) * 1996-03-29 1999-04-20 Motorola, Inc. Method of fabricating semiconductor devices and the devices
DE19804580C2 (de) * 1998-02-05 2002-03-14 Infineon Technologies Ag Leistungsdiode in Halbleitermaterial
WO2005093796A1 (ja) * 2004-03-26 2005-10-06 The Kansai Electric Power Co., Inc. バイポーラ型半導体装置およびその製造方法
TWI375994B (en) * 2004-09-01 2012-11-01 Sumitomo Electric Industries Epitaxial substrate and semiconductor element

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813273B1 (enExample) * 1968-10-18 1973-04-26
JPS4822390B1 (enExample) * 1969-03-18 1973-07-05
JPS4827504B1 (enExample) * 1969-08-13 1973-08-23
JPS5712565A (en) * 1980-06-26 1982-01-22 Nec Corp Schottky barrier element
US6362495B1 (en) * 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
WO2003094240A1 (en) * 2002-04-30 2003-11-13 Cree, Inc. High voltage switching devices and process for forming same
JP2005530334A (ja) * 2002-04-30 2005-10-06 クリー・インコーポレーテッド 高電圧スイッチング素子およびそれを形成するためのプロセス
JP2005236287A (ja) * 2004-02-17 2005-09-02 Emcore Corp 窒化物基半導体デバイスのための低ドープ層
JP2007036052A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 半導体整流素子
JP2009516391A (ja) * 2005-11-15 2009-04-16 ヴェロックス セミコンダクター コーポレーション ショットキーダイオードの性能を向上させる第２のショットキー接触金属層

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN7012004570; Ｃｈｉｎｇ-Ｔｉｎｇ　Ｌｅｅ，　ｅｔ　ａｌ．: 'Ｓｃｈｏｔｔｋｙ　ｂａｒｒｉｅｒ　ｈｅｉｇｈｔ　ａｎｄ　ｓｕｒｆａｃｅ　ｓｔａｔｅ　ｄｅｎｓｉｔｙ　ｏｆ　Ｎｉ／Ａｕ　ｃｏｎｔａｃｔｓ　ｔｏ　（ＮＨ４）２Ｓｘ-ｔｒｅａｔｅｄ　ｎ-ｔｙｐｅ　ＧａＮ' Ａｐｐｌｉｅｄ　Ｐｈｙｓｉｃｓ　Ｌｅｔｔｅｒｓ Ｖｏｌ．７９，　Ｉｓｓｕｅ　１６, 20011015, ｐｐ．２５０５-２６６６, Ｔｈｅ　Ａｍｅｒｉｃａｎ　Ｉｎｓｔｉｔｕｔｅ　ｏｆ　Ｐｈｙｓｉｃｓ *

Also Published As

Publication number Publication date
TW200845401A (en) 2008-11-16
EP2043157A4 (en) 2011-11-16
WO2008117718A1 (ja) 2008-10-02
CA2652948A1 (en) 2008-10-02
EP2043157A1 (en) 2009-04-01
CN101542736A (zh) 2009-09-23
KR20090127035A (ko) 2009-12-09
JP2014241436A (ja) 2014-12-25
US20100224952A1 (en) 2010-09-09
JPWO2008117718A1 (ja) 2010-07-15

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